scholarly journals Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric

2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
Seyoung Oh ◽  
Seung Won Lee ◽  
Dongjun Kim ◽  
Jeong-Hun Choi ◽  
Hong-Chul Chae ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Charge Trapping ◽  
Atomic Layer ◽  
Deposition Process ◽  
Memory Device ◽  
Switching Effect ◽  
High K ◽  
Effect Transistor

In this report, we demonstrated a reliable switching effect of carbon nanotube (CNT) field-effect transistor (FET) devices integrated with 99% semiconducting CNT as a channel and high-k oxide as the dielectric. CNT FET devices with high-k oxides of Al-ZrHfO2 and Al2O3 were electrically characterized and compared. There was no considerable hysteresis in the Al2O3-based CNT FET device. The Al-ZrHfO2 with a tetragonal phase-based high dielectric constant (~47), designed by an atomic layer deposition process, showed a reliable switching effect as well as low operation voltage (<±3 V). Charge trapping/detrapping process via oxygen vacancy-related defects of Al-ZrHfO2 was proposed as a primary mechanism to explain a current change of a counterclockwise direction and threshold voltage (Vth) shift for transfer properties. The suggested charge trapping model within bulk oxide was experimentally proven since the hysteresis from the adsorption/desorption of gas molecules to CNT surface was negligible. Endurance characteristics of the CNT switching devices remained stable without any serious current fluctuation during a repetitive cycling test. The memory device with reliable switching properties as well as low operation power would pave a road toward next-generation memory components of portable electronic gadgets.

scholarly journals Organic Field-Effect Transistor Memory Device Based on an Integrated Carbon Quantum Dots/Polyvinyl Pyrrolidone Hybrid Nanolayer

Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 753
Author(s):  
Wenting Zhang ◽  
Xiaoxing Guo ◽  
Jinchao Yin ◽  
Jianhong Yang
Keyword(s):  
Quantum Dots ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Trapping ◽  
Dielectric Materials ◽  
Memory Device ◽  
Carbon Quantum Dots ◽  
Polyvinyl Pyrrolidone ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

In this work, we present a pentacene-based organic field-effect transistor memory (OFETM) device, which employs one-step microwave-assisted hydrothermal carbon quantum dots (CQDs) embedded in a polyvinyl pyrrolidone (PVP) matrix, to form an integrated hybrid nanolayer as the charge trapping layer. The as-prepared CQDs are quasi-spherical amorphous C, with sizes ranging from 5 to 20 nm, with a number of oxygen-containing groups and likely some graphite-like domains that produce CQDs with excellent electron-withdrawing characteristics. The incorporation of CQDs into PVP dielectric materials results in a bidirectional storage property. By optimizing the concentration of CQDs embedded into the PVP matrix, the OFETM shows excellent memory characteristics with a large memory window of 8.41 V under a programming/erasing (P/E) voltage of ± 60 V and a retention time of up to 104 s.

Single shot measurement of the lifetime of a trapped electron in the gate dielectric of a high-k field effect transistor

2008 ◽  
Vol 93 (19) ◽  
pp. 193501 ◽  
Author(s):  
M. Ziaur Rahman Khan ◽  
D. G. Hasko ◽  
M. S. M. Saifullah ◽  
M. E. Welland
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Single Shot ◽  
High K ◽  
Effect Transistor ◽  
Trapped Electron
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