scholarly journals Application of FIB-SEM Techniques for the Advanced Characterization of Earth and Planetary Materials

Scanning ◽  
2020 ◽  
Vol 2020 ◽  
pp. 1-15
Author(s):  
Lixin Gu ◽  
Nian Wang ◽  
Xu Tang ◽  
H. G. Changela
Keyword(s):  
Electron Microscopy ◽  
Sample Preparation ◽  
Ion Beam ◽  
Advanced Characterization ◽  
Atomic Scale ◽  
Natural Materials ◽  
3D Tomography ◽  
The Earth ◽  
Dual Beam

Advanced microanalytical techniques such as high-resolution transmission electron microscopy (HRTEM), atom probe tomography (APT), and synchrotron-based scanning transmission X-ray microscopy (STXM) enable one to characterize the structure and chemical and isotopic compositions of natural materials down towards the atomic scale. Dual focused ion beam-scanning electron microscopy (FIB-SEM) is a powerful tool for site-specific sample preparation and subsequent analysis by TEM, APT, and STXM to the highest energy and spatial resolutions. FIB-SEM also works as a stand-alone technique for three-dimensional (3D) tomography. In this review, we will outline the principles and challenges when using FIB-SEM for the advanced characterization of natural materials in the Earth and Planetary Sciences. More specifically, we aim to highlight the state-of-the-art applications of FIB-SEM using examples including (a) traditional FIB ultrathin sample preparation of small particles in the study of space weathering of lunar soil grains, (b) migration of Pb isotopes in zircons by FIB-based APT, (c) coordinated synchrotron-based STXM characterization of extraterrestrial organic material in carbonaceous chondrite, and finally (d) FIB-based 3D tomography of oil shale pores by slice and view methods. Dual beam FIB-SEM is a powerful analytical platform, the scope of which, for technological development and adaptation, is vast and exciting in the field of Earth and Planetary Sciences. For example, dual beam FIB-SEM will be a vital technique for the characterization of fine-grained asteroid and lunar samples returned to the Earth in the near future.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

To Eliminate Curtain Effect of FIB TEM Samples by a Combination of Sample Dicing and Backside Milling

2014 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Low Cost ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.

A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

2002 ◽  
Author(s):  
Chin Kai Liu ◽  
Chi Jen. Chen ◽  
Jeh Yan.Chiou ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Sensitive Issue ◽  
Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

The Novel TEM Sample Preparation Approach for Targeted via with Barrier/Cu Seed Layer Inspection

2009 ◽  
Author(s):  
Wen-Fei Hsieh ◽  
Shih-Hsiang Tseng ◽  
Bo Min She
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Seed Layer ◽  
Target Location ◽  
Process Development ◽  
Process Integration ◽  
Ion Beam ◽  
Main Tool ◽  
Dual Beam ◽  
Sample Preparation Procedure

Abstract In this study, an FIB-based cross section TEM sample preparation procedure for targeted via with barrier/Cu seed layer is introduced. The dual beam FIB with electron beam for target location and Ga ion beam for sample milling is the main tool for the targeted via with barrier/Cu seed layer inspection. With the help of the FIB operation and epoxy layer protection, ta cross section TEM sample at a targeted via with barrier/Cu seed layer could be made. Subsequent TEM inspection is used to verify the quality of the structure. This approach was used in the Cu process integration performance monitor. All these TEM results are very helpful in process development and yield improvement.

scholarly journals Avoiding Dendrite Formation by Confining Lithium Deposition Underneath Li-Sn Coatings

2020 ◽  
Author(s):  
Grace Whang ◽  
Qizhang Yan ◽  
Da Li ◽  
Ziyang Wei ◽  
Danielle M. Butts ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Research Direction ◽  
Exchange Current ◽  
Atomic Scale ◽  
Interfacial Layers ◽  
Dendrite Formation ◽  
Lithium Deposition ◽  
Lithium Dendrite

<p>The use of interfacial layers to stabilize the lithium surface is a popular research direction for improving the morphology of deposited lithium and suppressing lithium dendrite formation. This work considers a different approach to controlling dendrite formation where lithium is plated underneath an interfacial coating. In the present research, a Li-Sn intermetallic was chosen as a model system due to its lithium-rich intermetallic phases and high Li diffusivity. These coatings also exhibit a significantly higher Li exchange current than bare Li thus leading to better charge transfer kinetics. The exchange current is instrumental in determining whether lithium deposition occurs above or below the Li-Sn coating. High-resolution transmission electron microscopy and cryogenic focused ion beam scanning electron microscopy were used to identify the features associated with Li deposition. Atomic scale simulations provide insight as to the adsorption energies determining the deposition of lithium below the Li-Sn coating. </p>

Recent Developments in Mechanical Specimen Preparation for Tem and Sem Applications

1999 ◽  
Vol 5 (S2) ◽  
pp. 932-933
Author(s):  
W. Li ◽  
S. Q. Wang ◽  
R. Trussell ◽  
M. Xu ◽  
R.D. Venables ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Integrated Circuits ◽  
Sample Preparation ◽  
Ion Beam ◽  
Wedge Angle ◽  
Specimen Preparation ◽  
Precise Control ◽  
Transmission Electron ◽  
Recent Developments ◽  
Polishing Tool

The continued reduction in the size of critical features in integrated circuits has resulted in the need to develop rapid, site-specific, sectioning techniques to enable efficient physical characterization of the structures of interest. We have implemented a mechanical polishing approach to achieve this objective with the additional goals of maximizing the number of targeted sites in a sample that can be analyzed, and minimizing physically destructive procedures, such as ion beam exposure. Precision sample preparation approaches have been under investigation for both transmission electron microscopy and scanning electron microscopy.The mechanical specimen preparation approach used in this work is a variant of the well-known wedge polishing technique. Here we use a polishing tool that does not contact the grinding surface, thus allowing precise control of the wedge angle. Prior to sample preparation, the polishing tool head was precision aligned parallel to the platen.

scholarly journals FIB-SEM Three-Dimensional Tomography for Characterization of Carbon-Based Materials

2019 ◽  
Vol 2019 ◽  
pp. 1-8 ◽  
Author(s):  
Nan Nan ◽  
Jingxin Wang
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
3D Tomography ◽  
Tomography System ◽  
Internal Structures ◽  
Potential Applications ◽  
Scanning Electron ◽  
Carbon Based

A review on the recent advances of the three-dimensional (3D) characterization of carbon-based materials was conducted by focused ion beam-scanning electron microscope (FIB-SEM) tomography. Current studies and further potential applications of the FIB-SEM 3D tomography technique for carbon-based materials were discussed. The goal of this paper is to highlight the advances of FIB-SEM 3D reconstruction to reveal the high and accurate resolution of internal structures of carbon-based materials and provide suggestions for the adoption and improvement of the FIB-SEM tomography system for a broad carbon-based research to achieve the best examination performances and enhance the development of innovative carbon-based materials.

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