Method for Fabricating Micro/Nanostructures via Scanning Probe Microscope and Anisotropic Wet Etching

2013 ◽  
Vol 13 (6) ◽  
pp. 3966-3971 ◽  
Author(s):  
Kexiang Hu ◽  
Qingkang Wang
Author(s):  
S. P. Sapers ◽  
R. Clark ◽  
P. Somerville

OCLI is a leading manufacturer of thin films for optical and thermal control applications. The determination of thin film and substrate topography can be a powerful way to obtain information for deposition process design and control, and about the final thin film device properties. At OCLI we use a scanning probe microscope (SPM) in the analytical lab to obtain qualitative and quantitative data about thin film and substrate surfaces for applications in production and research and development. This manufacturing environment requires a rapid response, and a large degree of flexibility, which poses special challenges for this emerging technology. The types of information the SPM provides can be broken into three categories:(1)Imaging of surface topography for visualization purposes, especially for samples that are not SEM compatible due to size or material constraints;(2)Examination of sample surface features to make physical measurements such as surface roughness, lateral feature spacing, grain size, and surface area;(3)Determination of physical properties such as surface compliance, i.e. “hardness”, surface frictional forces, surface electrical properties.


1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 1306-1310
Author(s):  
Francisco Vazquez ◽  
Kazuhito Furuya ◽  
Daisuke Kobayashi

2004 ◽  
Vol 811 ◽  
Author(s):  
Nobuhiro Kin ◽  
Koichiro Honda

ABSTRACTTo develop higher density FRAM requires reducing cell size. Therefore, the size effects resulting from device processing and the material's physical properties must be measured. Therefore, analyzing the electric characteristics of a single bit cell capacitor has become important. Two known characteristics of ferroelectric material are that the Vc increases at low temperatures, and the Pr falls at high temperatures. To further evaluate the impact of temperature on ferroelectrics, we constructed a new evaluation system based on a scanning probe microscope, that can measure the electric characteristics of a single bit cell capacitor. This system can be used in the temperature range from −120 degrees to 300 degrees C. We accomplished this by circulating liquid nitrogen around a SPM stage and by using an electrical heater. We measured the electrical properties of ferroelectric microcapacitors by using a sample with IrOx/PZT/Pt structure. Our measurements revealed that 2Pr really increases at low temperatures, and Pr decreases at high temperatures. That is, we have shown that Vc increases 30% at low temperatures and Pr decreases 10% also in an actual FRAM single bit cell capacitor.


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