Improvement in the Positive Bias Temperature Stability of SnOx-Based Thin Film Transistors by Hf and Zn Doping

2015 ◽  
Vol 15 (10) ◽  
pp. 7606-7610 ◽  
Author(s):  
Dongsuk Han ◽  
Jaehyung Park ◽  
Minsoo Kang ◽  
Hyeongtag Jeon ◽  
Jongwan Park
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Defect Density ◽  
Temperature Stability ◽  
Oxidation Potential ◽  
Oxide Thin Film ◽  
Electrical Characteristics ◽  
Field Effect Mobility

We investigated the performance of tin oxide thin film transistors (TFTs) using DC magnetron sputtering. A remarkable improvement in the transfer characteristics was obtained for the Hf-doped tin oxide (HTO) TFT. We also developed amorphous hafnium-zinc-tin oxide (HZTO) thin film transistors and investigated the effects of hafnium doping on the electrical characteristics of the HTO TFTs. Doping with hafnium resulted in a reduced defect density in the tin oxide channel layer related to oxygen vacancies, which may result from increased field effect mobility. Zinc atoms have relatively higher oxidation potential compared to tin atoms, so more oxygen molecules can be absorbed and more electrons are trapped in the HZTO films. The HZTO TFTs exhibited good electrical characteristics with a field effect mobility of 10.98 cm2/Vs, and a high ION/IOFF ratio over 108.

Effect of High-Speed Blade Coating on Electrical Characteristics in Polymer Based Transistors

2020 ◽  
Vol 20 (9) ◽  
pp. 5486-5490
Author(s):  
Jun-Ik Park ◽  
Hyun-Seok Jeong ◽  
Premkumar Vincent ◽  
Jihwan Park ◽  
Do-Kyung Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Conjugated Polymer ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Speed ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Polymer Thin Film ◽  
Blade Coating

We explore the effect of high-speed blade coating on electrical characteristics of conjugated polymer-based thin-film transistors (TFTs). As the blade-coating speed increased, the thickness of the polymer thin-film was naturally increased while the surface roughness was found to be unchanged. Polymer TFTs show two remarkable tendencies on the magnitude of field-effect mobility with increasing blade-coating speed. As the blade-coating speed increased up to 2 mm/s, the fieldeffect mobility increased to 4.72 cm2V−1s−1. However, when the coating speed reached 6 mm/s beyond 2 mm/s, the field-effect mobility rather decreased to 3.18 cm2V−1s−1. The threshold voltage was positively shifted from 2.09 to 8.29 V with respect to increase in blade-coating speed.

Effects of Annealing Temperature on Electrical Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors

2012 ◽  
Vol 51 (6R) ◽  
pp. 061101 ◽  
Author(s):  
Jeong-Soo Lee ◽  
Yong-Jin Kim ◽  
Yong-Uk Lee ◽  
Yong-Hoon Kim ◽  
Jang-Yeon Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Annealing Temperature ◽  
Oxide Thin Film ◽  
Electrical Characteristics ◽  
Solution Processed ◽  
Zinc Tin Oxide

scholarly journals Numerical Analysis on Effective Mass and Traps Density Dependence of Electrical Characteristics of a-IGZO Thin-Film Transistors

Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 119 ◽  
Author(s):  
Jihwan Park ◽  
Do-Kyung Kim ◽  
Jun-Ik Park ◽  
In Man Kang ◽  
Jaewon Jang ◽  
...  
Keyword(s):  
Thin Film ◽  
Effective Mass ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Electron Mass ◽  
Simulation Methods ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Electron Effective Mass ◽  
Amorphous Ingazno

We have investigated the effect of electron effective mass (me*) and tail acceptor-like edge traps density (NTA) on the electrical characteristics of amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs) through numerical simulation. To examine the credibility of our simulation, we found that by adjusting me* to 0.34 of the free electron mass (mo), we can preferentially derive the experimentally obtained electrical properties of conventional a-IGZO TFTs through our simulation. Our initial simulation considered the effect of me* on the electrical characteristics independent of NTA. We varied the me* value while not changing the other variables related to traps density not dependent on it. As me* was incremented to 0.44 mo, the field-effect mobility (µfe) and the on-state current (Ion) decreased due to the higher sub-gap scattering based on electron capture behavior. However, the threshold voltage (Vth) was not significantly changed due to fixed effective acceptor-like traps (NTA). In reality, since the magnitude of NTA was affected by the magnitude of me*, we controlled me* together with NTA value as a secondary simulation. As the magnitude of both me* and NTA increased, µfe and Ion deceased showing the same phenomena as the first simulation. The magnitude of Vth was higher when compared to the first simulation due to the lower conductivity in the channel. In this regard, our simulation methods showed that controlling me* and NTA simultaneously would be expected to predict and optimize the electrical characteristics of a-IGZO TFTs more precisely.

Effect of Oxygen Partial Pressure on Electrical Characteristics of Amorphous Zinc-Tin-Oxide Thin-Film Transistors

2014 ◽  
Vol 590 ◽  
pp. 229-233
Author(s):  
Sheng Po Chang
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Electrical Characteristics ◽  
Subthreshold Slope ◽  
Partial Pressures ◽  
Zinc Tin Oxide ◽  
Effect Of Oxygen

We fabricated and studied the electrical characteristics of thin-film transistors with an amorphous zinc-tin–oxide (a-ZTO) channel, which was deposited by radio frequency magnetron co-sputtering under different oxygen partial pressures. The effect of varying the oxygen concentration on the electrical properties and device performance of the a-ZTO TFTs was investigated. A positive shift observed in the threshold voltage with increasing oxygen suggests that the number of oxygen vacancies in the a-ZTO film decreased. With an oxygen flow rate of 4 %, a threshold voltage of 2.25 V, an on-off current ratio of 2.1 × 103, and a subthreshold slope of 0.8 V·dec−1were obtained.

scholarly journals The Role of Dual-Stacked Oxide Semiconductor in High Performance Thin Film Transistors

2020 ◽  
Author(s):  
Youn Sang Kim ◽  
Changik Im ◽  
Nam-Kwang Cho ◽  
Jintaek Park ◽  
Eun Goo Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
Oxide Semiconductor ◽  
Oxide Thin Film ◽  
Band Offset ◽  
Indium Gallium Zinc Oxide ◽  
Field Effect Mobility ◽  
Display Resolution

Abstract Oxide thin film transistors (TFTs) have attracted much attention because they can be applied to flexible and large-scaled switching devices. Especially, Oxide semiconductors (OSs) have been developed as active layers of TFTs and, among them, Indium-Gallium-Zinc-Oxide (IGZO) is actively used in the OLED display field. However, IGZO TFTs are limited by low field-effect mobility, which critically affects display resolution and power consumption, despite superior off-state properties. Herein, we prevailed new working mechanisms in dual-stacked OS and, based on this, developed dual-stacked OS-based TFT with high field-effect mobility (~80 cm2/V·s), ideal threshold voltage near 0 V, high on-off current ratio (>109), and good stability at bias stress. In dual-stacked OS, induced areas are formed at interface by band-offset: band-offset-induced area (BOIA) and BOIA-induced area (BIA). They connect gate-bias-induced area (GBIA) and electrode-bias-induced area (EBIA), resulting in high current flow. Such mechanism will provide new design rules for high performance OS-based TFTs.

Sign in / Sign up

Export Citation Format

Share Document