Effects of Annealing on an IGZO-Metal Interface

2021 ◽  
Vol 21 (8) ◽  
pp. 4423-4428
Author(s):  
Eun Seong Yu ◽  
Seok Jun Kang ◽  
Jong Mo Lee ◽  
Byung Seong Bae
Keyword(s):  
Free Energy ◽  
Metal Oxide ◽  
Gibbs Free Energy ◽  
Annealing Temperature ◽  
Metal Layer ◽  
Interface Reaction ◽  
Indium Gallium Zinc Oxide ◽  
Ambient Conditions ◽  
Annealing Temperatures ◽  
Interface Bond

The interface reaction between a metal layer and a layer of amorphous indium-gallium-zinc oxide was investigated. Oxygen atoms at the interface bond to the metal atoms and form metal oxide. The reaction depends on the annealing temperature and ambient conditions. The thickness of the metal oxide at the interface increased with the annealing temperatures. The reaction relies on the Gibbs free energy for oxidation. Ta, which has low Gibbs free energy formed a 33 nm layer of tantalum oxide at an annealing temperature of 450 °C. The HR-TEM and EDX observation showed that the metal oxide thicknesses were 5, 10, and 33 nm at annealing temperatures of 350, 400, and 450 °C, respectively. The thicknesses obtained with both Ar and oxygen gas were 4, 8, and 21 nm, respectively. The lower oxide thicknesses were attributed to the lower number of oxygen vacancies in the IGZO deposited using Ar and oxygen, which was identified by XPS analysis.

Stress-Induced Phase Transformations of Micro-Crystalline Silicon Films Arising at Nanoindentations

2011 ◽  
Vol 328-330 ◽  
pp. 910-914
Author(s):  
Chang Fu Han ◽  
Jen Fin Lin
Keyword(s):  
Free Energy ◽  
Phase Transitions ◽  
Gibbs Free Energy ◽  
Annealing Temperature ◽  
Crystalline Silicon ◽  
Contact Stresses ◽  
Annealing Temperatures ◽  
Proposed Model ◽  
Contact Parameters ◽  
Critical Contact

The stresses and strain values at various indentation depths are applied to determine the Gibbs free energy at various phases. The intersections of the Gibbs free energy lines are used to determine the possible paths of phase transitions arising at various indentation depths. All the critical contact stresses corresponding to the various phase transitions predicted by the proposed model for the specimens treated at four annealing temperatures were found to be consistent with the experimental results. The proposed model is thus valid for predicting contact parameters using nanoindentations. The critical contact stresses for the phase transitions increased with increasing specimen annealing temperature.

Film growth and interface reaction of ultra thin 3d-transition metal oxide/metal layer structures

2006 ◽  
Vol 156 (1-2) ◽  
pp. 27-31 ◽  
Author(s):  
Mathias Nagel ◽  
Lei Zhang ◽  
Heiko Peisert ◽  
Thomas Chassé
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Film Growth ◽  
Metal Layer ◽  
Interface Reaction ◽  
Transition Metal Oxide ◽  
Layer Structures

scholarly journals THERMODYNAMIC ANALYSIS OF INTERFACIAL REACTIONS IN SiC/Mg MATRIX COMPOSITES

2016 ◽  
Vol 22 (4) ◽  
pp. 230
Author(s):  
Shu Ge Yang ◽  
Kun Xia Wei ◽  
Wei Wei ◽  
Gui Hong Geng ◽  
Hui Wang ◽  
...  
Keyword(s):  
Free Energy ◽  
Helmholtz Equation ◽  
Gibbs Free Energy ◽  
Chemical Reactions ◽  
Thermodynamic Stability ◽  
Mass Fraction ◽  
Interface Reaction ◽  
Critical Value ◽  
Matrix Composites ◽  
Reaction Models

<p class="AMSmaintext">Gibbs free energy of chemical reactions between SiC particles and the Mg matrix at the different temperature has been calculated based on the Gibbs-Helmholtz equation and thermodynamic equilibrium of chemical reactions. The thermodynamic stability of Al<sub>4</sub>C<sub>3</sub> and MgAl<sub>2</sub>O<sub>4 </sub>in the interface was investigated. The results showed that when the activity of Si on interface is more than a critical value of A°si . A stable Al<sub>3</sub>C<sub>4 </sub>cannot formed when A si is more than A°si, which is not a constant, increasing with the temperature. The mass fraction and distribution of SiO<sub>2</sub>in the interface have directly effects on the reactions of SiO<sub>2 </sub>with Mg and Al. There is a critical value of A °Mg , A °Al and A 1Al , which increases with the temperature. When the mass fraction of Si in the interface is greater than a critical value, there is no interfacial reaction at a certain temperature. The interface reaction models have been proposed.</p>

Chemical equilibrium and chemical kinetics

2018 ◽  
Author(s):  
Dennis Sherwood ◽  
Paul Dalby
Keyword(s):  
Free Energy ◽  
Equilibrium Constant ◽  
Gibbs Free Energy ◽  
Chemical Kinetics ◽  
Chemical Equilibrium ◽  
First Principles ◽  
Effect Of Temperature ◽  
Total System ◽  
Free Energies

Building on the previous chapter, this chapter examines gas phase chemical equilibrium, and the equilibrium constant. This chapter takes a rigorous, yet very clear, ‘first principles’ approach, expressing the total Gibbs free energy of a reaction mixture at any time as the sum of the instantaneous Gibbs free energies of each component, as expressed in terms of the extent-of-reaction. The equilibrium reaction mixture is then defined as the point at which the total system Gibbs free energy is a minimum, from which concepts such as the equilibrium constant emerge. The chapter also explores the temperature dependence of equilibrium, this being one example of Le Chatelier’s principle. Finally, the chapter links thermodynamics to chemical kinetics by showing how the equilibrium constant is the ratio of the forward and backward rate constants. We also introduce the Arrhenius equation, closing with a discussion of the overall effect of temperature on chemical equilibrium.

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

2014 ◽  
Vol 806 ◽  
pp. 57-60
Author(s):  
Nicolas Thierry-Jebali ◽  
Arthur Vo-Ha ◽  
Davy Carole ◽  
Mihai Lazar ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Process Condition ◽  
Specific Contact Resistance ◽  
High Doping Level ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
P Type

This work reports on the improvement of ohmic contacts made on heavily p-type doped 4H-SiC epitaxial layer selectively grown by Vapor-Liquid-Solid (VLS) transport. Even before any annealing process, the contact is ohmic. This behavior can be explained by the high doping level of the VLS layer (Al concentration > 1020 cm-3) as characterized by SIMS profiling. Upon variation of annealing temperatures, a minimum value of the Specific Contact Resistance (SCR) down to 1.3x10-6 Ω.cm2 has been obtained for both 500 °C and 800 °C annealing temperature. However, a large variation of the SCR was observed for a same process condition. This variation is mainly attributed to a variation of the Schottky Barrier Height.

Structural Changes of UHV Deposited Titanium Thin Films in Presence of Oxygen Flow and Temperature

2011 ◽  
Vol 110-116 ◽  
pp. 1094-1098
Author(s):  
Haleh Kangarlou ◽  
Mehdi Bahrami Gharahasanloo ◽  
Akbar Abdi Saray ◽  
Reza Mohammadi Gharabagh
Keyword(s):  
Room Temperature ◽  
Structural Changes ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Oxygen Flow ◽  
Glass Substrates ◽  
Annealing Temperatures ◽  
Titanium Thin Films ◽  
Deposition Angle ◽  
Ti Films

Ti films of same thickness, and near normal deposition angle, and same deposition rate were deposited on glass substrates, at room temperature, under UHV conditions. Different annealing temperatures as 393K, 493K and 593K with uniform 8 cm3/sec, oxygen flow, were used for producing titanium oxide layers. Their nanostructures were determined by AFM and XRD methods. Roughness of the films changed due to annealing process. The gettering property of Ti and annealing temperature can play an important role in the nanostructure of the films.

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