A Complete Analytical Model of Surface Potential and Drain Current for an Ultra Short Channel Double Gate Asymmetric Junctionless Transistor

Introduction: A new analytical model is designed for Workfunction Modulated Rectangular Recessed Channel-Silicon On Insulator (WMRRC-SOI) MOSFET that considers the concept of groove gate and implements an idea of workfunction engineering. Methods: The impact of Negative Junction Depth (NJD) and oxide thickness (tox) are analyzed on device performances such as Sub-threshold Slope (SS), Drain Induced Barrier Lowering (DIBL) and threshold voltage. Results: The results of the proposed work are evaluated with the Rectangular Recessed Channel-Silicon On Insulator (RRC-SOI) MOSFET keeping the metal workfunction constant throughout the gate region. Furthermore, an analytical model is developed using 2D Poisson’s equation and threshold voltage is estimated in terms of minimum surface potential. Conclusion: In this work, the impact of Negative Junction Depth (NJD) on minimum surface potential and the drain current are also evaluated. It is observed from the analysis that the analog switching performance of WMRRC-SOI MOSFET surpasses RRC-SOI MOSFET in terms of better driving capability, high Ion/Ioff ratio, minimized Short Channel Effects (SCEs) and hot carrier immunity. Results are simulated using 2D Sentaurus TCAD simulator for validation of the proposed structure.

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Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00181-4 ◽

2020 ◽

Vol 21 (3) ◽

pp. 339-347 ◽

Cited By ~ 3

Author(s):

N. P. Maity ◽

Reshmi Maity ◽

Subir Dutta ◽

Subhasish Deb ◽

K. Girija Sravani ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Effect Transistor

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Computing Surface Potential and Drain Current in Nanometric Double-Gate MOSFET Using Ortiz-Conde Model

Advances in Intelligent Systems and Computing - Contemporary Advances in Innovative and Applicable Information Technology ◽

10.1007/978-981-13-1540-4_5 ◽

2018 ◽

pp. 41-47

Author(s):

Krishnendu Roy ◽

Anal Roy Chowdhury ◽

Arpan Deyasi ◽

Angsuman Sarkar

Keyword(s):

Surface Potential ◽

Drain Current ◽

Double Gate ◽

Double Gate Mosfet

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An Analytic Potential Based Velocity Saturated Drain Current, Charge and Capacitance Model for Short Channel Symmetric Double Gate MOSFETs

Lecture Notes in Electrical Engineering - Advances in Electrical and Computer Technologies ◽

10.1007/978-981-15-5558-9_63 ◽

2020 ◽

pp. 723-735

Author(s):

Vyas Murnal ◽

C. Vijaya

Keyword(s):

Drain Current ◽

Double Gate ◽

Short Channel ◽

Capacitance Model ◽

Analytic Potential

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A Drain Current and Transconductance Analytical Model for Symmetric Double Gate Junctionless FENT

Journal of Nano Research ◽

10.4028/www.scientific.net/jnanor.65.39 ◽

2020 ◽

Vol 65 ◽

pp. 39-50

Author(s):

N. Bora ◽

N. Deka ◽

R. Subadar

Keyword(s):

Analytical Model ◽

Field Effect ◽

Drain Current ◽

Double Gate ◽

Double Integral ◽

Electrical Parameters ◽

Continuity Equations ◽

Nanowire Transistor ◽

Drain Conductance ◽

Tcad Simulations

This paper presents an analytical model of various electrical parameters for an ultra thin symmetric double gate (SDG) junctionless field effect nanowire transistor (JLFENT). The model works for all the regions of operation of the nanowire transistor without using any fitting parameter. The surface potential is derived based on the solutions of Poisson’s and current continuity equations by using appropriate boundary conditions. The Pao–Sah double integral was used to obtain the drain current, transconductance and drain conductance. The results obtained from analytical model are validated by comparing with GENIUS 3D TCAD simulations. The simplicity of the model makes it appropriate to be a SPICE compatible model.

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Examining the Short Channel Characteristic and Performance of Triple Material Double Gate Silicon-on-Nothing Metal Oxide Semiconductor Field Effect Transistors with Grading Channel Concentration

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2019.2667 ◽

2019 ◽

Vol 14 (12) ◽

pp. 1672-1679 ◽

Cited By ~ 1

Author(s):

Ningombam Ajit Kumar ◽

Aheibam Dinamani Singh ◽

Nameirakpam Basanta Singh

Keyword(s):

Surface Potential ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

Double Gate ◽

Short Channel Effects ◽

Parabolic Approximation ◽

Short Channel ◽

Channel Characteristic ◽

Channel Effects ◽

And Performance

A 2D surface potential analytical model of a channel with graded channel triple material double gate (GCTMDG) Silicon-on-Nothing (SON) MOSFET is proposed by intermixing the benefits of triple material in gate engineering and graded doping in the channel. The surface potential distribution function of the GCTMDG SON MOSFET is obtained by solving the Poisson's equation, applying suitable boundary conditions, and using a parabolic approximation method. It is seen in the proposed device that the Short Channel Effects (SCEs) are subdued due to the apprehensible step in the surface potential profile that screen the potential of the drain. The effects of the various device parameters are studied to check the merit of the device. For the validation of the proposed device, it is compared with the simulated results of ATLASTM, a device simulator from SILVACO.

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