Beta-Gallium Oxide Nanowire Extended Gate Field Effect Transistor pH Sensors Prepared Using Furnace-Oxidized Gallium Nitride Thin Films

2014 ◽  
Vol 6 (10) ◽  
pp. 914-917 ◽  
Author(s):  
Sheng-Po Chang ◽  
Kuan-Jen Chen
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Gallium Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensors ◽  
Effect Transistor

Patterning rubrene crystalline thin films for sub-micrometer channel length field-effect transistor arrays

2014 ◽  
Vol 2 (44) ◽  
pp. 9359-9363 ◽  
Author(s):  
Juan Zhu ◽  
Wenchong Wang ◽  
Qigang Zhong ◽  
Liqiang Li ◽  
Chuan Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Channel Length ◽  
Organic Films ◽  
Porous Structures ◽  
Patterned Growth ◽  
Effect Transistor ◽  
Magnitude Difference

The patterned growth of crystalline rubrene films directly on electrodes is demonstrated. In addition, organic films with close packed and porous structures are locally achieved by controlling the electrode spaces, resulting in a two orders of magnitude difference in carrier mobility.

scholarly journals Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure

Electronics ◽  
2019 ◽  
Vol 8 (2) ◽  
pp. 241 ◽  
Author(s):  
Huolin Huang ◽  
Feiyu Li ◽  
Zhonghao Sun ◽  
Nan Sun ◽  
Feng Zhang ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Blocking Layer ◽  
Vertical Field ◽  
Current Blocking Layer ◽  
Effect Transistor ◽  
Vertical Field Effect ◽  
Vertical Field Effect Transistor ◽  
Current Blocking

A gallium nitride (GaN) semiconductor vertical field-effect transistor (VFET) has several attractive advantages such as high power density capability and small device size. Currently, some of the main issues hindering its development include the realization of normally off operation and the improvement of high breakdown voltage (BV) characteristics. In this work, a trenched-gate scheme is employed to realize the normally off VFET. Meanwhile, an additional back current blocking layer (BCBL) is proposed and inserted into the GaN normally off VFET to improve the device performance. The electrical characteristics of the proposed device (called BCBL-VFET) are investigated systematically and the structural parameters are optimized through theoretical calculations and TCAD simulations. We demonstrate that the BCBL-VFET exhibits a normally off operation with a large positive threshold voltage of 3.5 V and an obviously increased BV of 1800 V owing to the uniform electric field distribution achieved around the gate region. However, the device only shows a small degradation of on-resistance (RON). The proposed scheme provides a useful reference for engineers in device fabrication work and will be promising for the applications of power electronics.

scholarly journals Morphology and Field-Effect-Transistor Mobility in Tetracene Thin Films

2005 ◽  
Vol 15 (3) ◽  
pp. 375-380 ◽  
Author(s):  
F. Cicoira ◽  
C. Santato ◽  
F. Dinelli ◽  
M. Murgia ◽  
M. A. Loi ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

scholarly journals Piezoelectric Pb(Zr0.52Ti0.48)O3 thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties

2010 ◽  
Vol 107 (2) ◽  
pp. 024101 ◽  
Author(s):  
Meiyong Liao ◽  
Yasuhito Gotoh ◽  
Hiroshi Tsuji ◽  
Kiyomi Nakajima ◽  
Masataka Imura ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Crystal Diamond ◽  
Effect Transistor

Sub-micron field-effect transistor using granular NbN thin films

1993 ◽  
Vol 3 (1) ◽  
pp. 1987-1990 ◽  
Author(s):  
L. Zhang ◽  
N. Yoshikawa ◽  
M. Sugahara
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Nanomembranes: Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor (Adv. Funct. Mater. 41/2014)

2014 ◽  
Vol 24 (41) ◽  
pp. 6564-6564
Author(s):  
Kanglin Xiong ◽  
Sung Hyun Park ◽  
Jie Song ◽  
Ge Yuan ◽  
Danti Chen ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Fabrication of high performance/highly functional field-effect transistor devices based on [6]phenacene thin films

2013 ◽  
Vol 15 (47) ◽  
pp. 20611 ◽  
Author(s):  
Ritsuko Eguchi ◽  
Xuexia He ◽  
Shino Hamao ◽  
Hidenori Goto ◽  
Hideki Okamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Effect Transistor
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