Synthesis of Catalyst-Free Al Doped β-Ga2O3 Nanorod Arrays on Quartz Substrate by a Simple Chemical Vapor Deposition

2019 ◽  
Vol 11 (9) ◽  
pp. 1298-1304
Author(s):  
Xianghu Wang ◽  
Chengyu Pan ◽  
Hongyu You ◽  
Rongbin Li ◽  
Jing Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Seed Layer ◽  
Quartz Substrate ◽  
Chemical Vapor ◽  
Nanorod Arrays ◽  
Sharp Drop ◽  
Simple Chemical ◽  
Quartz Substrates ◽  
Seed Layer Thickness

The Al doped β-Ga2O3 (β-Ga2O3:Al) nanorod arrays with 3.14 at% Al were successfully synthesized on quartz substrate with β-Ga2O3 seed layer by using chemical vapor deposition (CVD) method. The experimental results showed that the β-Ga2O3 seed layer thickness had important effects on alignment of β-Ga2O3:Al nanorods. At the synthesized temperature of 910 °C, the β-Ga2O3:Al nanorods were random, uneven length and size on seedless layer quartz substrates, disorderly stacked together to shape on quartz substrates with 17 nm thick β-Ga2O3 seed layer and inclined nanorod arrays on quartz substrates with 91 nm thick β-Ga2O3 seed layer. The XRD, XPS and EDX measurements proved that Al was doped into nanorods and substituted for Ga atom. The optical transmittances of all β-Ga2O3:Al nanorods were above 70% in the region with wavelength greater than 276 nm and showed a sharp drop around wavelength of 250 nm. The band gap of β-Ga2O3 nanorods increased from 4.85 eV to 4.93 eV after 3.14 at% Al doping.

Synthesis of greenish phosphorus on carbon substrate

2021 ◽  
Author(s):  
Haipeng Wang ◽  
Cheng Liu ◽  
HuiLi Wang ◽  
Xinpeng Han ◽  
Shaojie Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Formation Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Carbon Substrate ◽  
Deposition Method ◽  
Critical Factors ◽  
Simple Chemical

One of the phosphorus allotropes called greenish phosphorus was successfully synthesized by simple chemical vapor deposition method. We revealed that the critical factors in the formation mechanism of greenish phosphorus...

TRANSPORT PROPERTIES OF CrO2 (100) FILM GROWN ON TiO2 BY A SIMPLE ATMOSPHERE PRESSURE CHEMICAL VAPOR DEPOSITION

2014 ◽  
Vol 21 (04) ◽  
pp. 1450055
Author(s):  
LIANG XIE ◽  
JIN ZHI ZHANG ◽  
NAI YI CUI ◽  
HONG GUANG ZHANG
Keyword(s):  
Chemical Vapor Deposition ◽  
Temperature Dependence ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Residual Resistivity ◽  
Low Field ◽  
Oriented Film ◽  
Critical Wavelength ◽  
Simple Chemical ◽  
Pressure Chemical

Epitaxial CrO 2 (100)-oriented film was successfully fabricated on TiO 2 (100) substrate by a simple chemical vapor deposition in a two-zone furnace with oxygen flow from a CrO 3 precursor. The transport measurements show that the CrO 2 film is metallic with a small residual resistivity 4 μΩ cm down to 0.6 K. The temperature dependence of resistivity was best described by a phenomenological expression ρ(T) = ρ0 + AT2 exp (-Δ/T) over the range of 0.6–300 K with Δ = 123.6 K. The magnetization of the film becomes saturated in a relatively low field with a small coercive field. The temperature dependence of magnetization shows Bloch's T3/2 law and the slope of the curve suggests a critical wavelength of λΔ ~ 26.6 Å beyond which spin-flip scattering becomes important.

On the carbo-thermal reduction of silica for carbon nano-fibre formation via CVD

2011 ◽  
Vol 1284 ◽  
Author(s):  
Alicja Bachmatiuk ◽  
Felix Börrnert ◽  
Imad Ibrahim ◽  
Bernd Büchner ◽  
Mark H. Rümmeli
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbothermal Reduction ◽  
Carbon Nanostructures ◽  
Reduction Process ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Thermal Reduction ◽  
Fibre Formation ◽  
Quartz Substrates

ABSTRACTThe formation of carbon nanostructures using silica nanoparticles from quartz substrates as a catalyst in an aerosol assisted chemical vapor deposition process was examined. The silica particles are reduced to silicon carbide via a carbothermal reduction process. The recyclability of the explored quartz substrates is also presented. The addition of triethyl borate improves the efficiency of the carbothermal reduction process and carbon nanotubes formation. Moreover, the addition of hydrogen during the chemical vapor deposition leads to the helical carbon nanostructures formation.

Temperature-Induced Structure and Morphological Transformation in SnS Prepared by a Chemical Vapor Deposition Method

2014 ◽  
Vol 513-517 ◽  
pp. 286-290 ◽  
Author(s):  
Ren Fu Zhuo ◽  
Yi Nong Wang ◽  
De Yan ◽  
Xiao Yong Xu ◽  
Zhi Guo Wu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Morphological Transformation ◽  
Simple Chemical ◽  
Different Temperatures ◽  
Sns Thin Films ◽  
Induced Structure ◽  
Made In

SnS thin films were deposited at different temperatures on silicon and quartz plates through directly elementary reaction via a simple chemical vapor deposition (CVD) process. The as-prepared products have a transformation of morphology from plate-like to granule-like when the temperature increased. A mechanism involving two competitive factors, surface energy and binding energy, was proposed to understand their growth. The products prepared at low temperature were single crystal while the films made in high temperature are polycrystal, the optical band gap (1.2~2.1ev) and the Sn:S atom ratios increases as the deposited temperature increases.

Synthesis of Carbon Nanotubes from Polycyclic Compounds by CVD Method

2006 ◽  
Vol 320 ◽  
pp. 163-166 ◽  
Author(s):  
Koji Yamada ◽  
Kentaro Abe ◽  
Masafumi Mikami ◽  
Morihiro Saito ◽  
Jun Kuwano
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quartz Substrate ◽  
Chemical Vapor ◽  
Polycyclic Compounds ◽  
Cvd Method ◽  
Multi Walled Carbon Nanotubes ◽  
Synthesis Of Carbon Nanotubes ◽  
Walled Carbon Nanotubes

Multi-walled carbon nanotubes (MWCNTs) were synthesized from camphor by a chemical vapor deposition (CVD) method in a range of 750-900. The catalyst was fed in three ways: (a) a sputtered Fe-film on a quartz substrate (b) vaporized ferrocene in an Ar flow; (c) both of (a) and (b). In the case (c), highly pure, dense and aligned MWCNT arrays formed on the quartz substrate at 850, whereas nonaligned MWCNTs formed in the cases (a) and (b).

Selective growth of zinc blende, wurtzite and hybrid SiC nanowires via a simple chemical vapor deposition route

CrystEngComm ◽  
2019 ◽  
Vol 21 (32) ◽  
pp. 4740-4746 ◽  
Author(s):  
Jingbo He ◽  
Bo Sun ◽  
Yong Sun ◽  
Chengxin Wang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
The Other ◽  
Phase Growth ◽  
Wurtzite Phase ◽  
Flow Rates ◽  
Sic Nanowires ◽  
Zinc Blende ◽  
Simple Chemical

3C-SiC, 2H-SiC and their hybrid nanowires were synthesized in a controllable manner via changing CH4 flow rates. It is found that higher CH4 supply facilitates the wurtzite phase growth, while the other phases formed when decreasing the flow rate.

Chemical Vapor Deposition of Porous GaN Particles on Silicon

2012 ◽  
Vol 18 (4) ◽  
pp. 905-911 ◽  
Author(s):  
Joan J. Carvajal ◽  
Oleksandr V. Bilousov ◽  
Dominique Drouin ◽  
Magdalena Aguiló ◽  
Francesc Díaz ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Band Edge ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Si Substrates ◽  
Internal Morphology ◽  
Simple Chemical

AbstractWe present a technique for the direct deposition of nanoporous GaN particles on Si substrates without requiring any post-growth treatment. The internal morphology of the nanoporous GaN particles deposited on Si substrates by using a simple chemical vapor deposition approach was investigated, and straight nanopores with diameters ranging between 50 and 100 nm were observed. Cathodoluminescence characterization revealed a sharp and well-defined near band-edge emission at ∼365 nm. This approach simplifies other methods used for this purpose, such as etching and corrosion techniques that can damage the semiconductor structure and modify its properties.

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