Hyperthermal atomic oxygen durable transparent silicon-reinforced polyimide

2018 ◽  
Vol 31 (7) ◽  
pp. 831-842 ◽  
Author(s):  
Min Qian ◽  
Xiao Yang Xuan
Keyword(s):  
Surface Morphology ◽  
Atomic Oxygen ◽  
Polyhedral Oligomeric Silsesquioxane ◽  
Amic Acid ◽  
Low Earth Orbit ◽  
Element Composition ◽  
Earth Orbit ◽  
Promising Candidate ◽  
Direct Dissolution ◽  
Oligomeric Silsesquioxane

A clear poly(amic acid) was reinforced by a trisilanolphenyl polyhedral oligomeric silsesquioxane (POSS) by direct dissolution, and transparent silicon-reinforced polyimide (Si-RPI) films with different POSS loadings were obtained after curing, showing high transmittance of >90% within 380–800 nm. The Si-RPI films were exposed to a ground hyperthermal atomic oxygen (AO) beam. The erosion depths and derived erosion yields of the materials decreased with POSS loadings. At a 20 wt% POSS loading, the Si-RPI showed an erosion yield of 0.13 × 10−24 cm3 atom−1 at a fluence of 2.79 × 1020 O atoms cm−2. Surface morphology and element composition characterization on Si-RPI indicated that SiOx-based passivating layers were formed on surfaces upon the hyperthermal AO attack. This study suggests a facile way of reinforcing Si into transparent polyimide for a promising candidate of spacecraft coating material operating in low Earth orbit.

Atomic oxygen effects on polymers containing silicon or phosphorus: Mass loss, erosion yield, and surface morphology

2018 ◽  
Vol 31 (8) ◽  
pp. 969-976 ◽  
Author(s):  
Wang Chunbo ◽  
Jiang Haifu ◽  
Tian Dongbo ◽  
Qin Wei ◽  
Chen Chunhai ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Mass Loss ◽  
Atomic Oxygen ◽  
Low Earth Orbit ◽  
Relative Order ◽  
Oxygen Effects ◽  
Arylene Ether ◽  
Inorganic Coatings ◽  
Oligomeric Silsesquioxane ◽  
Surface Morphologies

The differences among polymers containing silicon or phosphorus, 20% polyhedral oligomeric silsesquioxane polyimide (20%-POSS-PI), 30% polysiloxane- block-polyimides (30%-PSX-PI), poly(siloxane imide) homopolymer (PSX-PI), and arylene ether phosphine oxide homopolymer (P-PPO), on mass loss, erosion yield, and surface morphology were elucidated. The tolerance against atomic oxygen (AO) was improved versus Kapton®H after introducing silicon or phosphorus to the polymers. The relative order of the mass loss was PSX-PI < P-PPO < 20%-POSS-PI < 30%-PSX-PI. In contrast, the erosion yields of 30%-PSX-PI, 20%-POSS-PI, and P-PPO decreased by orders of magnitude (PSX-PI declined by about two orders). The surface of Kapton®H was seriously eroded by AO exhibiting a “carpet-like” shape, and the roughness of the surface of Kapton®H became remarkable as the AO fluence increased. PSX-PI, P-PPO, 20%-POSS-PI, and 30%-PSX-PI at an AO fluence of 5.2 × 1020 atoms/cm2 had different surface morphologies, and the relative order of the surface roughness was PSX-PI < 30%-PSX-PI < 20%-POSS-PI < P-PPO. The 30%-PSX-PI and PSX-PI had minor mass losses and a smooth surface. This kind of material might replace inorganic coatings for applications in low earth orbit.

Improved atomic oxygen erosion resistance of the carbon fibre–epoxy interface with polyhedral oligomeric silsesquioxane

2020 ◽  
Vol 32 (6) ◽  
pp. 681-692 ◽  
Author(s):  
Dan Zhao ◽  
Jinmei He ◽  
Nan Zheng ◽  
Yudong Huang
Keyword(s):  
Carbon Fibre ◽  
Photoelectron Spectroscopy ◽  
Atomic Oxygen ◽  
Erosion Resistance ◽  
Polyhedral Oligomeric Silsesquioxane ◽  
Low Earth Orbit ◽  
Siloxane Oligomers ◽  
Interlaminar Shear ◽  
Oligomeric Silsesquioxane ◽  
Atomic Oxygen Erosion

Polyhedral oligomeric silsesquioxane (POSS) was grafted onto the surface of carbon fibres (CFs) to fabricate carbon fibre/epoxy (CF/EP) composites with improved interlaminar shear strength (ILSS) and atomic oxygen (AO) erosion resistance. POSS-CF was prepared by reacting amine groups on the pretreated CF surface with the POSS to form a continuous uniform layer of siloxane oligomers. X-Ray photoelectron spectroscopy, scanning electron microscopy and Fourier transform infrared spectroscopy demonstrated that POSS was successfully grafted onto the CF surface. The ILSS and AO erosion resistance of the POSS-treated CFs and CF-EP interface were improved because a SiO2 passivation layer formed with AO exposure, especially with POSS-EP0409. This is an effective solution for enhancing the interfacial bonding force and interfacial AO erosion resistance for the low-Earth orbit environment.

Effect of Atomic Oxygen Exposure on Polyhedral Oligomeric Silsesquioxane/Polyimide Hybrid Materials in Low Earth Orbit Environment

2011 ◽  
Vol 492 ◽  
pp. 521-524 ◽  
Author(s):  
Shu Wang Duo ◽  
Mi Mi Song ◽  
Ting Zhi Liu ◽  
Chang Yuan Hu ◽  
Mei Shuan Li
Keyword(s):  
Photoelectron Spectroscopy ◽  
Atomic Oxygen ◽  
Polyhedral Oligomeric Silsesquioxane ◽  
Surface Region ◽  
Low Earth Orbit ◽  
Hybrid Films ◽  
Sem Images ◽  
Near Surface ◽  
X Ray ◽  
Oligomeric Silsesquioxane

A novel polyimide (PI) hybrid nanocomposite containing polyhedral oligomeric silsesquioxane (POSS) had been prepared by copolymerization of octa(aminophenyl)silsesquioxane (OAP-POSS), 4,4’ -oxydianiline (ODA), and pyromellitic dianhydride (PMDA). The AO resistance of these POSS/PI hybrid films was tested in the ground-based AO simulation facility. Exposed and unexposed surfaces have been characterized by X-ray photoelectron spectroscopy and FTIR. The XPS data indicate that the carbon content of the near-surface region is decreased from 63.6 to 19.3 at% after AO exposure. The oxygen and silicon concentrations in the near-surface region increase after AO exposure. The data reveal the formation of a passive inorganic SiO2 layer on the POSS/PI hybrid films during the AO exposure, which serves as a protective barrier preventing further degradation of the underlying polymer with increased exposure to the AO flux. SEM images showed that the surface of the 10 wt% POSS/PI became much less rough than that of the pristine polyimide. The AO resistance of the POSS/PI hybrid films is up to several tenfold than that of the pristine polyimide.

scholarly journals Atomic Oxygen-Resistant Polyimide Composite Films Containing Nanocaged Polyhedral Oligomeric Silsesquioxane Components in Matrix and Fillers

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 141
Author(s):  
Yan Zhang ◽  
Hao Wu ◽  
Yi-dan Guo ◽  
Yan-bin Yang ◽  
Qiang Yu ◽  
...  
Keyword(s):  
High Temperature ◽  
Atomic Oxygen ◽  
Composite Films ◽  
Linear Thermal Expansion ◽  
Polyhedral Oligomeric Silsesquioxane ◽  
Low Earth Orbit ◽  
Aromatic Diamine ◽  
Self Healing ◽  
Passivation Layers ◽  
Oligomeric Silsesquioxane

For the development of spacecraft with long-servicing life in low earth orbit (LEO), high-temperature resistant polymer films with long-term atomic oxygen (AO) resistant features are highly desired. The relatively poor AO resistance of standard polyimide (PI) films greatly limited their applications in LEO spacecraft. In this work, we successfully prepared a series of novel AO resistant PI composite films containing nanocaged polyhedral oligomeric silsesquioxane (POSS) components in both the PI matrix and the fillers. The POSS-containing PI matrix film was prepared from a POSS-substituted aromatic diamine, N-[(heptaisobutyl-POSS)propyl]-3,5-diaminobenzamide (DABA-POSS) and a common aromatic diamine, 4,4′-oxydianline (ODA) and the aromatic dianhydride, pyromellitic dianhydride (PMDA) by a two-step thermal imidization procedure. The POSS-containing filler, trisilanolphenyl POSS (TSP-POSS) was added with the fixed proportion of 20 wt% in the final films. Incorporation of TSP-POSS additive apparently improved the thermal stability, but decreased the high-temperature dimensional stable nature of the PI composite films. The 5% weight loss temperature (T5%) of POSS-PI-20 with 20 wt% of DABA-POSS is 564 °C, and its coefficient of linear thermal expansion (CTE) is 81.0 × 10−6/K. The former is 16 °C lower and the latter was 20.0 × 10−6/K higher than those of the POSS-PI-10 film (T5% = 580 °C, CTE = 61.0 × 10−6/K), respectively. POSS components endowed the PI composite films excellent AO resistance and self-healing characteristics in AO environments. POSS-PI-30 exhibits the lowest AO erosion yield (Es) of 1.64 × 10−26 cm3/atom under AO exposure with a flux of 2.51 × 1021 atoms/cm2, which is more than two orders of magnitude lower than the referenced PI (PMDA-ODA) film. Inert silica or silicate passivation layers were detected on the surface of the PI composite films exposed to AO.

scholarly journals Preparation and Properties of Intrinsically Atomic-Oxygen Resistant Polyimide Films Containing Polyhedral Oligomeric Silsesquioxane (POSS) in the Side Chains

Polymers ◽  
2020 ◽  
Vol 12 (12) ◽  
pp. 2865 ◽  
Author(s):  
Hao Wu ◽  
Yan Zhang ◽  
Yi-Dan Guo ◽  
Hao-Ran Qi ◽  
Yuan-Cheng An ◽  
...  
Keyword(s):  
Atomic Oxygen ◽  
Linear Thermal Expansion ◽  
Polyhedral Oligomeric Silsesquioxane ◽  
Tensile Modulus ◽  
Low Earth Orbit ◽  
Molecular Structures ◽  
Polyimide Films ◽  
Passivation Layers ◽  
Pyromellitic Anhydride ◽  
Oligomeric Silsesquioxane

The relatively poor atomic-oxygen (AO) resistance of the standard polyimide (PI) films greatly limits the wide applications in low earth orbit (LEO) environments. The introduction of polyhedral oligomeric silsesquioxane (POSS) units into the molecular structures of the PI films has been proven to be an effective procedure for enhancing the AO resistance of the PI films. In the current work, a series of POSS-substituted poly (pyromellitic anhydride-4,4′-oxydianiline) (PMDA-ODA) films (POSS-PI) with different POSS contents were synthesized via a POSS-containing diamine, N-[(heptaisobutyl-POSS)propyl]-3,5-diaminobenzamide (DABA-POSS). Subsequently, the effects of the molecular structures on the thermal, tensile, optical, and especially the AO-erosion behaviors of the POSS-PI films were investigated. The incorporation of the latent POSS substituents decreased the thermal stability and the high-temperature dimensional stability of the pristine PI-0 (PMDA-ODA) film. For instance, the PI-30 film with the DABA-POSS content of 30 wt% in the film exhibited a 5% weight loss temperature (T5%) of 512 °C and a coefficient of linear thermal expansion (CTE) of 54.6 × 10−6/K in the temperature range of 50–250 °C, respectively, which were all inferior to those of the PI-0 film (T5% = 574 °C; CTE = 28.9 × 10−6/K). In addition, the tensile properties of the POSS-containing PI films were also deteriorated, to some extent, due to the incorporation of the DABA-POSS components. The tensile strength (TS) of the POSS-PI films decreased with the order of PI-0 > PI-10 > PI-15 > PI-20 > PI-25 > PI-30, and so did the tensile modulus (TM) and the elongations at break (Eb). PI-30 showed the TS, TM, and Eb values of 75.0 MPa, 1.55 GPa, and 16.1%, respectively, which were all lower than those of the PI-0 film (TS = 131.0 MPa, TM = 1.88 GPa, Eb = 73.2%). Nevertheless, the incorporation of POSS components obviously increased the AO resistance of the PI films. All of the POSS-PI films survived from the AO exposure with the total fluence of 2.16 × 1021 atoms/cm2, while PI-0 was totally eroded under the same circumstance. The PI-30 film showed an AO erosion yield (Es) of 1.1 × 10−25 cm3/atom, which was approximately 3.67% of the PI-0 film (Es = 3.0 × 10−24 cm3/atom). Inert silica or silicate passivation layers were detected on the surface of the POSS-PI films after AO exposure, which efficiently prevented the further erosion of the under-layer materials.

scholarly journals The Effect of Low Earth Orbit Atomic Oxygen Exposure on Phenylphosphine Oxide-Containing Polymers

2000 ◽  
Vol 12 (1) ◽  
pp. 43-52 ◽  
Author(s):  
John W Connell
Keyword(s):  
Thin Film ◽  
Atomic Oxygen ◽  
Low Earth Orbit ◽  
Space Environment ◽  
Earth Orbit ◽  
Cooperative Effort ◽  
Flight Experiment ◽  
Oxygen Exposure ◽  
Atomic Oxygen Exposure ◽  
Phenylphosphine Oxide

Thin films of phenylphosphine oxide-containing polymers were exposed to low Earth orbit aboard a space shuttle flight (STS-85) as part of flight experiment designated Evaluation of Space Environment and Effects on Materials (ESEM). This flight experiment was a cooperative effort between the NASA Langley Research Center (LaRC) and the National Space Development Agency of Japan (NASDA). The thin-film samples described herein were part of an atomic oxygen exposure (AOE) experiment and were exposed to primarily atomic oxygen (∼1×1019 atoms cm−2). The thin-film samples consisted of three phosphine oxide-containing polymers (arylene ether, benzimidazole and imide). Based on post-flight analyses using atomic force microscopy, x-ray photo-electron spectroscopy and weight loss data, it was found that the exposure of these materials to atomic oxygen (AO) produces a phosphorus oxide layer on the surface of the samples. Earlier work has shown that this layer provides a barrier towards further attack by AO. Consequently, these materials do not exhibit linear erosion rates which is in contrast with most organic polymers. Qualitatively, the results obtained from these analyses compare favourably with those obtained from samples exposed to AO and/or an oxygen plasma in ground-based exposure experiments. The results of the low Earth orbit AO exposure on these materials will be compared with those of ground-based exposure to AO.

Atomic Oxygen Resistant Polysiloxane Coatings for Low Earth Orbit Space Structures

2015 ◽  
Vol 830-831 ◽  
pp. 699-702 ◽  
Author(s):  
G.N. Arjun ◽  
T.L. Lincy ◽  
T.S. Sajitha ◽  
S. Bhuvaneshwari ◽  
Thomas Deepthi ◽  
...  
Keyword(s):  
Reaction Time ◽  
Surface Morphology ◽  
Mass Loss ◽  
Atomic Oxygen ◽  
Thermo Gravimetric Analysis ◽  
Orbit Space ◽  
Solid Content ◽  
Low Earth Orbit ◽  
Gravimetric Analysis ◽  
Coating Materials

Polysiloxane resin copolymer was synthesized through acid catalyzed hydrolysis of methyl triethoxysilane (MTEOS) and diethoxytetramethyldisiloxane (DEOTMDS). The effect of reaction time on the properties of the polymer was studied and this copolymer was characterized by GPC, 29Si NMR, IR, TGA, viscosity, refractive index, specific gravity and solid content. 29Si NMR and IR showed characteristic signals of Si-O-Si linkage which confirmed the formation of the polymer. GPC and solid content analysis showed an increasing trend in molecular weight with reaction time. Thermo gravimetric analysis showed that the polymer was thermally stable upto ≈ 260°C and all the polymers gave a ceramic residue in the range of 77-80% at 900°C. Siloxane prepared inhouse and methyl phenyl silsequioxane (control) were used as coating materials and atomic oxygen (AO) resistance was evaluated on Al-Kapton, carbon polyimide composite and glass polyimide composite. The mass loss and surface morphology of the coated samples were measured at different time intervals. It is observed that mass loss of polysiloxane coated samples was very less, compared to coated control samples. The morphology of all the samples were studied using FESEM. Erosion kinetics and surface morphology investigation indicate that the polysiloxane coating possesses excellent AO resistance, and displays better cracking resistance on AO exposure.

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