scholarly journals Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistors

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Junseok Seo ◽  
Kyungjune Cho ◽  
Woocheol Lee ◽  
Jiwon Shin ◽  
Jae-Keun Kim ◽  
...  
Keyword(s):  
Response Time ◽  
Thermal Annealing ◽  
Gate Voltage ◽  
Field Effect ◽  
Radiative Recombination ◽  
Field Effect Transistors ◽  
Type Conductivity ◽  
X Ray ◽  
Response Characteristics ◽  
P Type

Abstract We investigated the electrical and optoelectronic characteristics of ambipolar WSe2 field-effect transistors (FETs) via facile p-doping process during the thermal annealing in ambient. Through this annealing, the oxygen molecules were successfully doped into the WSe2 surface, which ensured higher p-type conductivity and the shift of the transfer curve to the positive gate voltage direction. Besides, considerably improved photoswitching response characteristics of ambipolar WSe2 FETs were achieved by the annealing in ambient. To explore the origin of the changes in electrical and optoelectronic properties, the analyses via X-ray photoelectron, Raman, and photoluminescence spectroscopies were performed. From these analyses, it turned out that WO3 layers formed by the annealing in ambient introduced p-doping to ambipolar WSe2 FETs, and disorders originated from the WO3/WSe2 interfaces acted as non-radiative recombination sites, leading to significantly improved photoswitching response time characteristics.

scholarly journals Isolation and Characterization of the Unexpected 1-N-Octyloxyperopyrene: A Solution-Processable P-Type Organic Semi-Conductor

2019 ◽  
Author(s):  
Marta Martínez-Abadía ◽  
Gabriella Antonicelli ◽  
Akinori Saeki ◽  
Manuel Melle-Franco ◽  
Aurelio Mateo-Alonso
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Isolation And Characterization ◽  
Polycyclic Aromatic ◽  
P Type ◽  
Liquid Deposition

<div><div><div><p>The synthesis and optical, electrochemical, thermal and electrical characterization of a new and unexpected 1-n-octyloxyperopyrene is reported. The structure of 1-n- octyloxyperopyrene has been unambiguously established by single crystal X-ray diffraction. The solubility of this polycyclic aromatic hydrocarbon, endowed by the alkoxy substituent, allows the fabrication of thin film field-effect transistors by liquid deposition methods. These devices show hole mobilities up to 1.61 × 10–3 cm2 V–1 s–1.</p></div></div></div>

Radiative Recombination in a-Si:H-FETs

1987 ◽  
Vol 95 ◽  
Author(s):  
R. Carius
Keyword(s):  
Space Charge Region ◽  
Gate Voltage ◽  
Field Effect ◽  
Photoluminescence Spectrum ◽  
Radiative Recombination ◽  
Field Effect Transistors ◽  
High Energy ◽  
Dangling Bond ◽  
Radiative Recombination Rate ◽  
Photoluminescence Band

AbstractWe have studied the photoluminescence in the space charge region of field effect transistors (FETs) based on a-Si:H in the temperature range T>100K. The radiative recombination rate rises with increasing gate voltage (Vg >0) The increase is more pronounced at the high energy side of the photoluminescence spectrum and the relative changes increase with temperature. These results are compared to those obtained on doped a-Si:H films, where the defect photoluminescence band increases slightly with increasing doping level but the intrinsic band drops off very rapidly. The different influence of the Fermilevel shift in the doped films is explained by the increasing defect concentration which dominates the photoluminescence results. The results in the FETs are attributed solely to the changes in the occupation of the dangling bond states.

scholarly journals Isolation and Characterization of the Unexpected 1-N-Octyloxyperopyrene: A Solution-Processable P-Type Organic Semi-Conductor

2019 ◽  
Author(s):  
Marta Martínez-Abadía ◽  
Gabriella Antonicelli ◽  
Akinori Saeki ◽  
Manuel Melle-Franco ◽  
Aurelio Mateo-Alonso
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Isolation And Characterization ◽  
Polycyclic Aromatic ◽  
P Type ◽  
Liquid Deposition

<div><div><div><p>The synthesis and optical, electrochemical, thermal and electrical characterization of a new and unexpected 1-n-octyloxyperopyrene is reported. The structure of 1-n- octyloxyperopyrene has been unambiguously established by single crystal X-ray diffraction. The solubility of this polycyclic aromatic hydrocarbon, endowed by the alkoxy substituent, allows the fabrication of thin film field-effect transistors by liquid deposition methods. These devices show hole mobilities up to 1.61 × 10–3 cm2 V–1 s–1.</p></div></div></div>

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

scholarly journals Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 901
Author(s):  
Gizem Acar ◽  
Muhammad Javaid Iqbal ◽  
Mujeeb Ullah Chaudhry
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Limiting Factors ◽  
Hole Injection ◽  
Large Area ◽  
Device Structure ◽  
Light Emitting ◽  
Emission Area ◽  
P Type

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

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