The nucleation and growth morphology of nickel impurity precipitates in silicon wafers

2020 ◽  
pp. 229-234
Author(s):  
P D Augustus
Keyword(s):  
Nucleation And Growth ◽  
Silicon Wafers ◽  
Growth Morphology

Initial Nucleation and Growth Morphology of Uranium Electrodeposited in LiCl-KCl Eutectic

2021 ◽  
Vol MA2021-02 (20) ◽  
pp. 715-715
Author(s):  
Kui Liu ◽  
Wei Wang ◽  
Mingliang Kang ◽  
Biao Wang
Keyword(s):  
Nucleation And Growth ◽  
Growth Morphology ◽  
Initial Nucleation

Nucleation of Islands During Epitaxial Growth: Influence of a Second Species

1998 ◽  
Vol 528 ◽  
Author(s):  
Pushkar S. Ranade ◽  
D. C. Chrzan
Keyword(s):  
Field Theory ◽  
Experimental Data ◽  
Mean Field Theory ◽  
Mean Field ◽  
Nucleation And Growth ◽  
Growth Morphology ◽  
Additional Species ◽  
Self Consistent ◽  
Island Density ◽  
Number Of Authors

AbstractThe theory of the nucleation and growth of islands is maturing rapidly. This advance is driven by the increased availability of experimental data, as well as the need for better control over growth processes. Recently, a number of authors have studied the effects of introducing a second species onto the surface in order to influence the ultimate growth morphology. In some situations, the addition of a second species results in a signficant change (approximately a factor of 1000) in the nucleated island density. The origin of this increase in density has been linked to the anomalous diffusion induced by the presence of the additional species of atoms. In the current paper, this dependence is explored further. In particular, earlier work focused on nucleation and growth in the regime in which the second species is essentially immobile. This constraint is relaxed here, and the subsequent model studied through application of a self-consistent mean-field theory. Predictions for the total island density are presented.

A Model That Describes the Role of Oxygen, Carbon, and Silicon Interstitials in Silicon Wafers During Device Processing

1984 ◽  
Vol 36 ◽  
Author(s):  
R. A. Hartzell ◽  
H. F. Schaake ◽  
R. G. Massey
Keyword(s):  
Differential Equation ◽  
Partial Differential Equation ◽  
Nucleation And Growth ◽  
Silicon Wafers ◽  
Partial Differential ◽  
Oxygen Precipitation ◽  
Device Processing ◽  
Precipitate Growth ◽  
Oxygen Precipitates

ABSTRACTA model has been developed that simulates oxygen precipitation in silicon wafers during high temperature device processing. The approach used to calculate the nucleation and growth of oxygen precipitates is radically different from other approaches presented in the literature. A discrete rate equation representation of nucleation and growth has been transformed into a continuum representation in the form of a partial differential equation. This partial differential equation describing both the statistical clustering of oxygen during nucleation and the diffusion driven transport during precipitate growth is solved continuously starting from crystal growth through any arbitrary time-dependent temperature process.

Inducing nucleation and growth of chalcogenide nanostructures on silicon wafers

CrystEngComm ◽  
2014 ◽  
Vol 16 (38) ◽  
pp. 8977-8983
Author(s):  
Yingchang Jiang ◽  
Shudong Zhang ◽  
Jian Zhang ◽  
Zhongping Zhang ◽  
Zhenyang Wang
Keyword(s):  
Nucleation And Growth ◽  
Silicon Wafers

Morphological studies of III-V thin layers and SLS'S

1987 ◽  
Vol 45 ◽  
pp. 344-345
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson ◽  
A. Kibbler
Keyword(s):  
Atmospheric Pressure ◽  
Secondary Electron ◽  
Large Strain ◽  
Nucleation And Growth ◽  
Thin Layers ◽  
Growth Morphology ◽  
Structural Perfection ◽  
Quantum Well Structures ◽  
Morphological Studies ◽  
Strained Layer Superlattices

Thin layers of III-V semiconductors, such as quantum well structures and strained layer superlattices (SLS's), are currently of great interest. However, there have been widely scattered reports suggesting that thin layers and SLS's with arbitrarily large strain and thicknesses are difficult if not impossible to grow. In this work we studied the nucleation, morphology and structural perfection of a wide variety of thin layers in the GaAs/GalnAsP system. These epitaxial layers were grown by atmospheric pressure MOCVD. The GaAs/GalnAs system is mismatched through the entire compositional range, the extreme mismatch being 7% for GaAs/lnAs. The nucleation and growth morphology of GalnAs layers on GaAs were observed to be very strongly dependent on the mismatch (i.e. the In concentration x) This is clearly depicted in Fig. 1 which shows secondary electron micrographs of the surface of three GalnAs layers grown for 30 sec. using the same growth rate of 600 Å min-1.

scholarly journals Influence of Austenite Phase Transformation on Existing Microstructure of Low C-Mn Steel

2018 ◽  
Vol 8 (6) ◽  
pp. 3525-3529
Author(s):  
S. H. Abro ◽  
A. Chandio ◽  
A. R. Jamali ◽  
S. A. Shah
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Optical Microscope ◽  
Nucleation And Growth ◽  
Austenite Phase ◽  
Continuous Heating ◽  
Growth Morphology ◽  
Microscopy Techniques ◽  
Mn Steel ◽  
Scanning Electron

Cold heading quality CHQ steel is widely used for making small components due to its excellent cold heading response. Austenite nucleation and growth morphology of a commercial CHQ steel has been studied by continuous heating experiments using lead-bath up-quenching at different heating temperatures. Modern optical microscope Olympus GX51, scanning electron microscopy techniques have been deployed to reveal and interpret the microstructure. It was found that at 740°C the microstructure shows lack of homogeneity, hence the cold-head-ability of CHQ steel is anisotropic. At high temperatures, in austenite domain, at 60sec, the resultant austenite is highly homogenous. Then the cold-head-ability properties of CHQ steel turned to be isotropic.

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