The gauge factor and nonlinearity of 80nm polysilicon nanofilms with different doping concentration were tested. The experimental results show that, from 8.1×1018cm-3 to 2.0×1020cm-3, the gauge factors first increase then decrease, which like the common polysilicon films (thickness is larger than 100nm). From 2.0×1020cm-3 to 7.1×1020cm-3, the gauge factors do not change with doping concentration almost, which can be explained by tunneling piezoresistive theory. When doping concentration is low than 4.1×1019cm-3, the nonlinearities are big, and the nonlinearities become small when doping concentration is high than 4.1×1019cm-3. The nonlinearity is related to the occupied condition of trapping states in grain boundary. The longitudinal gauge factor and nonlinearity are smaller than transverse ones. Take the gauge factor and nonlinearity both into consideration, the optimal doping concentration should be 4.1×1019cm-3. The conclusions are very useful for design and fabrication of polysilicon nanofilms piezoresistive sensor.
Theoretical relationship between p-type polysilicon thin film gauge factor and doping concentration
