Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation

In this paper, we carried out a comprehensive study and optimization of implementing p-NiO in the β-Ga2O3 based diodes, including Schottky barrier diode (SBD) with p-NiO guard ring (GR), p-NiO/β-Ga2O3 heterojunction (HJ) barrier Schottky (HJBS) diode, and HJ-PN diode through the TCAD simulation. In particular, we provide design guidelines for future p-NiO-related Ga2O3 diodes with material doping concentrations and dimensions to be taken into account. Although HJ-PN has a ~1 V higher turn-on voltage (Von), its breakdown voltage (BV) is the highest among all diodes. We found that for SBD with p-NiO GRs and HJBS, their forward electrical characteristics and reverse leakage current are related to the total width and the doping concentration of p-NiO, the BV is only related to the doping concentration of p-NiO, and the optimal doping concentration of p-NiO is found to be 4 × 1017 cm−3. Compared with the SBD without p-NiO, the BV of the SBD with p-NiO and HJBS diode can be essentially improved by 3 times. As a result, HJ-PN diode, SBD with p-NiO GRs, and HJ-BS diode achieve a BV/specific on-resistance (Ron,sp) of 5705 V/4.3 mΩ·cm2, 3006 V/3.07 mΩ·cm2, and 3004 V/3.06 mΩ·cm2, respectively. Based on different application requirements, this work provides a useful insight about the diode selection with various structures.

Reinforcing Increase of ΔTc in MgB2 Smart Meta-Superconductors by Adjusting the Concentration of Inhomogeneous Phases

Incorporating with inhomogeneous phases with high electroluminescence (EL) intensity to prepare smart meta-superconductors (SMSCs) is an effective method for increasing the superconducting transition temperature (Tc) and has been confirmed in both MgB2 and Bi(Pb)SrCaCuO systems. However, the increase of ΔTc (ΔTc = Tc ‒ Tcpure) has been quite small because of the low optimal concentrations of inhomogeneous phases. In this work, three kinds of MgB2 raw materials, namely, aMgB2, bMgB2, and cMgB2, were prepared with particle sizes decreasing in order. Inhomogeneous phases, Y2O3:Eu3+ and Y2O3:Eu3+/Ag, were also prepared and doped into MgB2 to study the influence of doping concentration on the ΔTc of MgB2 with different particle sizes. Results show that reducing the MgB2 particle size increases the optimal doping concentration of inhomogeneous phases, thereby increasing ΔTc. The optimal doping concentrations for aMgB2, bMgB2, and cMgB2 are 0.5%, 0.8%, and 1.2%, respectively. The corresponding ΔTc values are 0.4, 0.9, and 1.2 K, respectively. This work open a new approach to reinforcing increase of ΔTc in MgB2 SMSCs.

A Novel LDMOS with Ultralow Specific on-Resistance and Improved Switching Performance

A stepped split triple-gate SOI LDMOS with P/N strip (P/N SSTG SOI LDMOS) is proposed, which has ultralow specific on-resistance (Ron,sp) and low switching losses. The proposed device has a triple-gate (TG) and stepped split gates (SSGs). P strip, N-drift and oxide trench are alternately arranged in the Z direction. Meanwhile, the SSGs are located in the oxide trench of the N-drift region and are distributed in steps. Firstly, the TG increases the channel width (Wch) and has the effect of modulating current distribution, resulting in lower Ron,sp and higher transconductance (gm). Secondly, the SSGs serve as the field plate to assist the depletion of the N-drift region, increasing the optimal doping concentration of the N-drift region (Nd-opt) and further reducing the Ron,sp. Moreover, the SSGs also have the effect of modulating the electric field distribution to maintain a high breakdown voltage (BV). Meanwhile, gate-drain charge (QGD) and switching losses are reduced on account of the introduction of the SSGs. Thirdly, in the off-state, the P strip and SSGs multidimensional assisted depletion of the N-drift region, which greatly increases the Nd-opt. The highly doped N-drift region provides a low-resistance path for the current, which also further reduces Ron,sp. Compared with triple-gate (TG) SOI LDMOS with almost equal breakdown voltage, the Ron,sp and QGD of P/N SSTG SOI LDMOS are reduced by 62% and 63%, respectively.

Effect of Eu3+ doping concentration on the structural and luminescence properties of NaYF4: Eu3+ nanoparticles

In our study, hexagonal-NaYF4: Eu3+ nanoparticles were synthesized by the solvothermal method at 180◦C for 24 hours. The typical vibrational spectrum showed the appearance of characteristic organic modes of oleic acid in the sample. The presence of elements such as Na, Y, F and Eu was indicated in the energy-dispersive X-ray spectroscopy (EDX). X-ray diffraction (XRD) patterns revealed that the NaYF4 host possessed the hexagonal structure when the doping contents below 5 mol%. At the Eu3+ amount of 10 mol%, the XRD appeared additional peaks of cubic phase of NaYF4 host. Both XRD and TEM data showed that the crystal sizes increase slightly as a function of Eu3+ doping concentration. Under an excitation at 395 nm, photoluminescence (PL) spectra revealed that the ratio of emission intensity between orange and red were controlled by changing the doping concentration. The optimal doping concentration was about 7 mol% for achieving the highest emission intensity. Moreover, PL data also demonstrated that a part of ions Eu3+ could occupy at Y3+ sites in the crystal structure of NaYF4. Because of their outstanding luminescent properties, NaYF4:Eu nanoparticles would the potential material for applications in biomedical medicine, optoelectronics.

Novel red-emitting Lu3Te2Li3O12: Eu3+ phosphor with high color purity for n-UV WLEDs

In this work, a series of red emitting Lu3Te2Li3O12: Eu3+ phosphors were synthesized for the first time by high temperature solid state reaction. The structure was characterized by X-ray diffraction. The excitation spectra, emission spectra and CIE chromaticity coordinate were studied. The phosphors show strong red emission at 611 nm due to the 5D0-7F2 transition of Eu3+ ions. The optimal doping concentration of Eu3+ in LTL host is x = 0.5 due to the concentration quenching mechanism of dipole-dipole interaction. The CIE chromaticity coordinates of the LTL: 0.5Eu3++ phosphor is (0.644,0.355), and the purity of the color is up to 93.61%. The phosphor can be considered as a potential red-emitting candidate for near UV WLEDs.

Energy Transfer and Spectroscopic Characterization of New Green Emitting Li3Ba2Gd3(WO4)8:Tb3+ Phosphor

A new tungstate family, Li3Ba2Gd3(WO4)8doped with Tb3+is synthesized by using a conventional high-temperature solid-state method to explore new pure green phosphors for white light-emitting diodes (WLEDs). The results from the X-Ray patterns show that the crystal structures of the hosts are composed of tungstate zigzags and the Gd3+-Gd3+units, which are isolated by the [WO4]2-groups. The critical concentration of Tb3+is up to x=2.0 in the singly doped phosphors, which is ascribed to the interaction of the isolated Gd3+ions being mitigated by [WO4]2-groups. The characteristic green emission peaks at around 547 nm are also observed, which result from the5D4→7F5transition of Tb3+ions, and the optimal doping concentration is x=2.0.

Alleviating luminescence concentration quenching in lanthanide doped CaF2 based nanoparticles through Na+ ion doping

Optimal doping concentration of Nd3+ shifts from 10 mol% to 30 mol% through Na+ doping, along with an ∼32 times NIR brightness increase.

Effect of Doping Concentrations on Properties of Nb Doped ZnO (NZO) Ceramics Targets

Nb doped ZnO (NZO) ceramic targets were prepared by sintering in air for 3 hours. The morphologies, structure, densification behavior, mechanical and electrical properties of the sintered ceramic targets with different doping concentrations were investigated. The optimal doping concentration was obtained. The results indicated that the sintered NZO ceramic targets with doping amount of 1wt.% (1wt% Nb2O5) had optimum comprehensive properties, which was corresponding to an electrical resistivity of 1.87×10-2Ω·cm, a relative density of 99.1%, a Vickers hardness of 320MPa and a bending strength of 72.8MPa. The NZO ceramic target has a potential to be used as a high-quality sputtering target to deposit ZnO-based transparent conductive films.

Luminescence Properties and Synthesis of SrMgAl10O17:Mn4+ Red Phosphor for White Light-Emitting Diodes

A series of Mn4+ doped SrMgAl10O17 phosphors are synthesized by a conventional solid-state reaction method in air, and their crystal structure, morphology, and fluorescence properties are investigated. The luminescence properties show clearly that SrMgAl10O17:Mn4+ phosphor can be excited by UV (200–380 nm), near UV (380–420 nm), and blue (420–480 nm) bands of LEDs chip, and emits red light in the range of 600 nm to 750 nm with satisfying CIE chromaticity coordinates (0.7207, 0.2793). The optimal doping concentration of Mn4+ ion is ∼1 mol%, and its lifetime is ∼1.15 ms. The possible luminous mechanism of Mn4+ ion is discussed by Tanabe-Sugano diagram. These experiment results indicate that Mn4+ doped SrMgAl10O17 phosphors can be a potential application as a red-emitting phosphor candidate in white LEDs.

Synthesis and Photoluminescence Property of Ca3Y2-xSmxWO9 Phosphors

A series of novel reddish-orange phosphors Ca3Y2-xSmxWO9were synthesized by solid-state method and characterized by X-ray diffraction (XRD), fourier transform infrared spectroscopy (FTIR) and photoluminescence (PL) spectra. The results showed that these phosphors are tetragonal structures. The optimum calcining temperature was 1100°C, and the sintering time was 3h. The results demonstrated that the optimal doping concentration of Sm3+in Ca3Y2WO9was about 1 mol%. The main emission line was4G5/2→6H7/2transition of Sm3+at 593nm, and showed intense reddish-orange.