scholarly journals TEMPERATURE CONTROL OF POWER SEMICONDUCTOR DEVICES OF TRACTION CONVERTER

2017 ◽  
Vol 2017 (1) ◽  
pp. 200-206
Author(s):  
Александр Пугачев ◽  
Aleksandr Pugachev ◽  
Владимир Воробьев ◽  
Vladimir Vorobev ◽  
Николай Стрекалов ◽  
...  
Keyword(s):  
Temperature Control ◽  
Dynamic Properties ◽  
Asynchronous Motor ◽  
Comparative Assessment ◽  
Thermal Processes ◽  
Power Devices ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Cooling Fan ◽  
Semiconductor Converter

The functional and structural circuits of an au-tomatic system for temperature control of power devices of a traction semiconductor converter of frequency are developed. The peculiarities of power devices as an object of temperature control are considered, an equivalent circuit of thermal processes substitution in semiconductor keys is offered, a comparative assessment of capacity of power loss in two- and three-level inverters of voltage is carried out. The dynamic properties of an electro-drive of a cooling fan with an asynchronous motor with a system of scalar control are analyzed. The recommendations on choice and computation of temperature control are developed.

Electro-Thermal Design of Smart Power Devices and Integrated Circuits

2014 ◽  
Vol 918 ◽  
pp. 191-194 ◽  
Author(s):  
Konstantin O. Petrosyants ◽  
Igor A. Kharitonov ◽  
Nikita I. Ryabov
Keyword(s):  
Integrated Circuits ◽  
High Power ◽  
Temperature Sensors ◽  
Thermal Design ◽  
Analysis Tool ◽  
Power Devices ◽  
Smart Power ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Combined Use

An efficient methodology of electro-thermal design of smart power semiconductor devices and ICs, based on the combined use of SPICE circuit analysis tool and software tools for 2D/3D thermal simulation of IC chip construction, is presented. The features of low, medium and high power elements, temperature sensors, IC chips simulation are considered.

Heat Spreader Characteristics Of Multilayer Diamond Films For High Frequency Power Devices

1997 ◽  
Vol 483 ◽  
Author(s):  
B. Ramaswami ◽  
K. Jagannadham
Keyword(s):  
Diamond Films ◽  
Single Layer ◽  
Power Devices ◽  
Heat Spreader ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Heat Spreaders ◽  
Composite Heat ◽  
Frequency Power

AbstractSingle layer diamond and multilayer diamond films consisting of diamond and aluminum nitride are deposited on molybdenum and silicon nitride substrates. Silicon or GaAs device wafers and the diamond substrates are prepared by metallization and bonded using gold-tin eutectic solder. Results of characterization of the bond by thermal cycling, scanning electron microscopy of the cross-section samples and X-ray mapping of the distribution of different elements are presented. Advantages of use of multilayer diamond composite heat spreaders in power semiconductor devices are discussed.

A Dimple-Array Interconnect Technique for Power Semiconductor Devices

2001 ◽  
Vol 682 ◽  
Author(s):  
Simon S. Wen ◽  
Daniel Huff ◽  
Guo-Quan Lu
Keyword(s):  
Heat Dissipation ◽  
Thermomechanical Analysis ◽  
Thermal Cycling Test ◽  
Power Devices ◽  
Power Module ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Reliability Characteristics ◽  
Bonding Technology ◽  
Electrical Connections

ABSTRACTThis paper describes a wireless-bond interconnect technique, termed Dimple-Array Interconnect (DAI) technique for packaging power devices. Electrical connections onto the devices are established by soldering arrays of dimples pre-formed on a metal sheet. Preliminary experimental and analytical results demonstrated potential advantages of this technique such as reduced parasitic noises, improved heat dissipation, as well as lowered processing complexity, compared to the conventional wire bonding technology in power module manufacturing. Thermomechanical analysis using thermal cycling test and FEM were also performed to evaluate the reliability characteristics of this interconnect technique for power devices.

High-Accuracy Fatigue Evaluation of Power Devices by Multi-Coupled Analysis

2009 ◽  
Author(s):  
Kazunori Shinohara ◽  
Qiang Yu ◽  
Takashi Anzawa ◽  
Hideaki Ishii
Keyword(s):  
Semiconductor Device ◽  
Semiconductor Devices ◽  
High Accuracy ◽  
Hybrid Vehicles ◽  
Coupled Analysis ◽  
Power Devices ◽  
Power Semiconductor Device ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Fatigue Evaluation

To calculate power semiconductor device fatigue with high accuracy, multiphysics analysis comprising electrical, heat, and stress analyses is presented. Power semiconductor devices (e.g., IGBTs) have been widely used in various applications. In particularly, the power semiconductor device (IGBT) becomes important component in vehicle applications. There is a high demand for compact and high-power capacity next-generation vehicles such as electric vehicles and hybrid vehicles. However, it causes the problem such as thermal stress. The reliability of power semiconductor devices has to be investigated by carrying out highly accurate simulations before developing IGBTs. In this paper, the electrical conductivity in silicon (IGBT) is considered as the material parameter. The semiconductor resistance is calculated by voltage distributions in the semiconductor. Comparing the conductivity constant case with the conductivity variation case, we examine the effects of the electrical characteristics of the semiconductor on fatigue.

Residual Voids in Degassing Process of Encapsulation Gel for Power Semiconductor Devices

2014 ◽  
Vol 134 (6) ◽  
pp. 432-433
Author(s):  
Masahiro Sato ◽  
Akiko Kumada ◽  
Kunihiko Hidaka ◽  
Keisuke Yamashiro ◽  
Yuji Hayase ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Power Semiconductor ◽  
Power Semiconductor Devices
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