A Dimple-Array Interconnect Technique for Power Semiconductor Devices

2001 ◽  
Vol 682 ◽  
Author(s):  
Simon S. Wen ◽  
Daniel Huff ◽  
Guo-Quan Lu
Keyword(s):  
Heat Dissipation ◽  
Thermomechanical Analysis ◽  
Thermal Cycling Test ◽  
Power Devices ◽  
Power Module ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Reliability Characteristics ◽  
Bonding Technology ◽  
Electrical Connections

ABSTRACTThis paper describes a wireless-bond interconnect technique, termed Dimple-Array Interconnect (DAI) technique for packaging power devices. Electrical connections onto the devices are established by soldering arrays of dimples pre-formed on a metal sheet. Preliminary experimental and analytical results demonstrated potential advantages of this technique such as reduced parasitic noises, improved heat dissipation, as well as lowered processing complexity, compared to the conventional wire bonding technology in power module manufacturing. Thermomechanical analysis using thermal cycling test and FEM were also performed to evaluate the reliability characteristics of this interconnect technique for power devices.

Sandwich Structured Power Module for High Temperature SiC Power Semiconductor Devices

2014 ◽  
Vol 2014 (1) ◽  
pp. 000757-000762 ◽  
Author(s):  
Takeshi ANZAI ◽  
Yoshinori MURAKAMI ◽  
Shinji SATO ◽  
Hidekazu TANISAWA ◽  
Kohei HIYAMA ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
High Temperature ◽  
Semiconductor Devices ◽  
Ceramic Substrate ◽  
Power Module ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
High Temperature Operation

A high temperature sandwich structured power module for high temperature SiC power semiconductor devices has been accomplished. Problems were found in the high temperature building-up process of the module caused by excess warpage of the ceramic substrate. Also the high temperature operation of the power module brings an excess warpage of the structure caused by parts having different coefficients of thermal expansion (CTEs) from each other. In this paper, some countermeasures to overcome the problems are demonstrated.

scholarly journals TEMPERATURE CONTROL OF POWER SEMICONDUCTOR DEVICES OF TRACTION CONVERTER

2017 ◽  
Vol 2017 (1) ◽  
pp. 200-206
Author(s):  
Александр Пугачев ◽  
Aleksandr Pugachev ◽  
Владимир Воробьев ◽  
Vladimir Vorobev ◽  
Николай Стрекалов ◽  
...  
Keyword(s):  
Temperature Control ◽  
Dynamic Properties ◽  
Asynchronous Motor ◽  
Comparative Assessment ◽  
Thermal Processes ◽  
Power Devices ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Cooling Fan ◽  
Semiconductor Converter

The functional and structural circuits of an au-tomatic system for temperature control of power devices of a traction semiconductor converter of frequency are developed. The peculiarities of power devices as an object of temperature control are considered, an equivalent circuit of thermal processes substitution in semiconductor keys is offered, a comparative assessment of capacity of power loss in two- and three-level inverters of voltage is carried out. The dynamic properties of an electro-drive of a cooling fan with an asynchronous motor with a system of scalar control are analyzed. The recommendations on choice and computation of temperature control are developed.

Electro-Thermal Design of Smart Power Devices and Integrated Circuits

2014 ◽  
Vol 918 ◽  
pp. 191-194 ◽  
Author(s):  
Konstantin O. Petrosyants ◽  
Igor A. Kharitonov ◽  
Nikita I. Ryabov
Keyword(s):  
Integrated Circuits ◽  
High Power ◽  
Temperature Sensors ◽  
Thermal Design ◽  
Analysis Tool ◽  
Power Devices ◽  
Smart Power ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Combined Use

An efficient methodology of electro-thermal design of smart power semiconductor devices and ICs, based on the combined use of SPICE circuit analysis tool and software tools for 2D/3D thermal simulation of IC chip construction, is presented. The features of low, medium and high power elements, temperature sensors, IC chips simulation are considered.

Heat Spreader Characteristics Of Multilayer Diamond Films For High Frequency Power Devices

1997 ◽  
Vol 483 ◽  
Author(s):  
B. Ramaswami ◽  
K. Jagannadham
Keyword(s):  
Diamond Films ◽  
Single Layer ◽  
Power Devices ◽  
Heat Spreader ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Heat Spreaders ◽  
Composite Heat ◽  
Frequency Power

AbstractSingle layer diamond and multilayer diamond films consisting of diamond and aluminum nitride are deposited on molybdenum and silicon nitride substrates. Silicon or GaAs device wafers and the diamond substrates are prepared by metallization and bonded using gold-tin eutectic solder. Results of characterization of the bond by thermal cycling, scanning electron microscopy of the cross-section samples and X-ray mapping of the distribution of different elements are presented. Advantages of use of multilayer diamond composite heat spreaders in power semiconductor devices are discussed.

Thermo-mechanical Simulations for Single-Sided and Double-Sided Cooling Power Packages

2016 ◽  
Vol 13 (1) ◽  
pp. 23-32 ◽  
Author(s):  
Hao Zhang ◽  
Simon S. Ang
Keyword(s):  
Heat Dissipation ◽  
Coefficient Of Thermal Expansion ◽  
Heat Removal ◽  
Mechanical Stresses ◽  
Cooling Power ◽  
Power Semiconductor ◽  
Advantages And Disadvantages ◽  
Power Semiconductor Devices ◽  
Chip Carrier ◽  
Packaging Structure

With the emergence of new power semiconductor devices and packaging technologies, the power density of the power packages or modules is increasing rapidly. Double-sided cooling power packages maximize heat dissipation by enabling heat removal from both the top and bottom sides of the module. This article compares single-sided and double-sided cooling power packaging structures to elucidate advantages and disadvantages of these packaging structures in terms of thermal and thermo-mechanical based on finite element simulations. Simulation results reveal that double-sided cooling power packages greatly improve their thermal performances, but they face challenges due to their high thermo-mechanical stresses. The use of a viscoelastic underfill resin and a coefficient of thermal expansion–matched ceramic chip carrier in the double-sided cooling power packaging structure is shown to reduce thermo-mechanical stresses.

The Research of LEDs with Metal Substrates

2015 ◽  
Vol 727-728 ◽  
pp. 277-279
Author(s):  
Hai Kuang ◽  
Shi An He ◽  
Meng Xu
Keyword(s):  
Thermal Conductivity ◽  
High Power ◽  
Heat Dissipation ◽  
Semiconductor Devices ◽  
Copper Substrate ◽  
Luminous Efficiency ◽  
Metal Substrates ◽  
Power Semiconductor ◽  
Power Semiconductor Devices

There are good thermal conductivity, high luminous efficiency in the LEDs with metal substrates, which can effectively solve the problems such as poor heat dissipation、poor reliability of LEDs. The copper substrate LEDs have successfully developed with good performance by SemiLEDs, which indicates the direction of the high-power semiconductor devices for lighting.

10 kV SiC Power MOSFETs and JBS Diodes: Enabling Revolutionary Module and Power Conversion Technologies

2012 ◽  
Vol 717-720 ◽  
pp. 1225-1228 ◽  
Author(s):  
Mrinal K. Das ◽  
David Grider ◽  
Scott Leslie ◽  
Ravi Raju ◽  
Michael Schutten ◽  
...  
Keyword(s):  
State Of The Art ◽  
Schottky Diodes ◽  
Power Conversion ◽  
Power Module ◽  
Power Mosfets ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Power Substation ◽  
Conversion Technologies ◽  
First Time

The majority carrier domain of power semiconductor devices has been extended to 10 kV with the advent of SiC MOSFETs and Schottky diodes. Twenty-four MOSFETs and twelve JBS diodes have been assembled in a 10 kV half H-bridge power module to increase the current handling capability to 120 A per switch without compromising the die-level characteristics. For the first time, a custom designed system (13.8 kV to 465/√3 V solid state power substation) has been successfully demonstrated with these state of the art SiC modules up to 855 kVA operation and 97% efficiency. Soft-switching at 20 kHz, the SiC enabled SSPS represents a 70% reduction in weight and 50% reduction in size when compared to a 60 Hz conventional, analog transformer.

scholarly journals A SiC Double-Sided Stacked Wire-Bondless Power Module for High-Frequency Power Electronic Applications

2021 ◽  
Vol 18 (3) ◽  
pp. 113-122
Author(s):  
Si Huang ◽  
Zhong Chen
Keyword(s):  
High Frequency ◽  
Heat Dissipation ◽  
Power Devices ◽  
Power Module ◽  
Power Mosfets ◽  
Parasitic Inductance ◽  
Switching Performance ◽  
Bond Wires ◽  
Materials Used

Abstract This article reports a double-sided stacked wire-bondless power module package for silicon carbide (SiC) power devices to achieve low parasitic inductance and improved thermal performance for high-frequency applications. The design, simulation, fabrication, and characterization of the power module are presented. A half-bridge module based on the SiC power MOSFETs is demonstrated with minimized parasitic inductance. Double-sided cooling paths are used to maximize heat dissipation. Besides conventional packaging materials used in the power module fabrication, a low-temperature cofired ceramic (LTCC) and nickel-plated copper balls are used in this module package. The LTCC acts as an interposer providing both electrical and thermal routings. The nickel-plated copper balls replace bond wires as the electrical interconnections for the SiC power devices. The electrical and thermo-mechanical simulations of the power module are performed, and its switching performance is evaluated experimentally.

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