Complex (dusty) plasmas: Examples for applications and observation of magnetron-induced phenomena

2005 ◽  
Vol 77 (2) ◽  
pp. 415-428 ◽  
Author(s):  
H. Kersten ◽  
G. Thieme ◽  
M. Fröhlich ◽  
D. Bojic ◽  
D. H. Tung ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Dusty Plasmas ◽  
Dust Particles ◽  
Rf Plasma ◽  
Magnetron Discharge ◽  
Organic Precursor ◽  
Carbon Particles ◽  
Metal Organic ◽  
The Stability ◽  
New Applications

Low-pressure plasmas offer a unique possibility of confinement, control, and fine tailoring of particle properties. Hence, dusty plasmas have grown into a vast field, and new applications of plasma-processed dust particles are emerging.During the deposition of thin amorphous films onto melamine formaldehyde (MF) microparticles in a C2H2 plasma, the generation of nanosized carbon particles was also studied. The size distribution of those particles is quite uniform.In another experiment, the stability of luminophore grains could be improved by coating with protective Al2O3 films that are deposited by a plasma-enhanced chemical vapor deposition (PECVD) process using a metal-organic precursor gas. Coating of SiO2 microparticles with thin metal layers by magnetron sputtering is also described. Especially the interaction of the microsized grains confined in a radio frequency (rf) plasma with the dc magnetron discharge during deposition was investigated. The observations emphasize that the interaction between magnetron plasma and injected microdisperse powder particles can also be used as a diagnostic tool for the characterization of magnetron sputter sources.

scholarly journals Synthesis of carbon nanowalls from a single-source metal-organic precursor

2018 ◽  
Vol 9 ◽  
pp. 1895-1905 ◽  
Author(s):  
André Giese ◽  
Sebastian Schipporeit ◽  
Volker Buck ◽  
Nicolas Wöhrl
Keyword(s):  
Surface Diffusion ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Single Source ◽  
Organic Precursor ◽  
Inductively Coupled ◽  
Deposition Parameters ◽  
Metal Organic ◽  
Carbon Nanowalls

In this work, the deposition of carbon nanowalls (CNWs) by inductively coupled plasma enhanced chemical vapor deposition (ICP-PECVD) is investigated. The CNWs are electrically conducting and show a large specific surface area, which is a key characteristic to make them interesting for sensors, catalytic applications or energy-storage systems. It was recently discovered that CNW films can be deposited by the use of the single-source metal-organic precursor aluminium acetylacetonate. This precursor is relatively unknown in combination with the ICP-PECVD deposition method in literature and, thus, based on our previous publication is further investigated in this work to better understand the influence of the various deposition parameters on the growth. Silicon, stainless steel, nickel and copper are used as substrate materials. The CNWs deposited are characterized by scanning electron microscopy (SEM), Raman spectroscopy and Auger electron spectroscopy (AES). The combination of bias voltage, the temperature of the substrate and the substrate material had a strong influence on the morphology of the graphitic carbon nanowall structures. With regard to these results, a first growth model for the deposition of CNWs by ICP-PECVD and aluminium acetylacetonate is proposed. This model explains the formation of four different morphologies (nanorods as well as thorny, straight and curled CNWs) by taking the surface diffusion into account. The surface diffusion depends on the particle energies and the substrate material and thus explains the influence of these parameters.

scholarly journals Growth of Catalyst-Free Hexagonal Pyramid-Like InN Nanocolumns on Nitrided Si(111) Substrates via Radio-Frequency Metal–Organic Molecular Beam Epitaxy

Crystals ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 291 ◽  
Author(s):  
Wei-Chun Chen ◽  
Tung-Yuan Yu ◽  
Fang-I Lai ◽  
Hung-Pin Chen ◽  
Yu-Wei Lin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Chemical Properties ◽  
Rf Plasma ◽  
Transmission Electron Microscopy Analysis ◽  
Organic Precursor ◽  
Metal Organic ◽  
Hexagonal Pyramid

Hexagonal pyramid-like InN nanocolumns were grown on Si(111) substrates via radio-frequency (RF) metal–organic molecular beam epitaxy (MOMBE) together with a substrate nitridation process. The metal–organic precursor served as a group-III source for the growth of InN nanocolumns. The nitridation of Si(111) under flowing N2 RF plasma and the MOMBE growth of InN nanocolumns on the nitrided Si(111) substrates were investigated along with the effects of growth temperature on the structural, optical, and chemical properties of the InN nanocolumns. Based on X-ray diffraction analysis, highly <0001>-oriented, hexagonal InN nanocolumns were grown on the nitride Si(111) substrates. To evaluate the alignment of arrays, the deviation angles of the InN nanocolumns were measured using scanning electron microscopy. Transmission electron microscopy analysis indicated that the InN nanocolumns were single-phase wurtzite crystals having preferred orientations along the c-axis. Raman spectroscopy confirmed the hexagonal structures of the deposited InN nanocolumns.

Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth

1999 ◽  
Vol 14 (1) ◽  
pp. 12-15 ◽  
Author(s):  
John A. Belot ◽  
Richard J. McNeely ◽  
Anchuan Wang ◽  
Charles J. Reedy ◽  
Tobin J. Marks ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Yttria Stabilized Zirconia ◽  
Organic Chemical ◽  
Major Advance ◽  
Stabilized Zirconia ◽  
Organic Precursor ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

This communication reports rapid, efficient syntheses of the zirconium-organic metal-organic chemical vapor deposition (MOCVD) precursors Zr(acac)4 and Zr(dpm)4 (acac = acetylacetonate; dpm = dipivaloylmethanate) as well as a new, highly volatile, air- and moisture-stable Zr precursor based on a tetradentate Schiff-base ligand, Zr(tfacen)2 (tfacen = bis-trifluoroacetylacetone-ethylenediiminate). The improved one-step synthetic routes employ tetrakis(dimethylamido)zirconium as a common intermediate and represent a major advance over previous methods employing ZrCl4 or diketonate metathesis. Furthermore, Zr(tfacen)2 is shown to be an effective metal-organic precursor for the MOCVD-mediated growth of (100) oriented yttria-stabilized zirconia thin films.

Bisethylacetoacetato Cu(II) as a novel metal-organic precursor for Cu film production by plasma-enhanced chemical vapor deposition toward ultra-large-scale integration metallization

1996 ◽  
Vol 11 (5) ◽  
pp. 1051-1060 ◽  
Author(s):  
Soon T. Hwang ◽  
Ilwun Shim ◽  
Kyung O. Lee ◽  
Kyeong S. Kim ◽  
Ju H. Kim ◽  
...  
Keyword(s):  
Large Scale ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Process Conditions ◽  
Organic Precursor ◽  
Cu Films ◽  
Hydrogen Flow ◽  
Cu Film ◽  
Metal Organic ◽  
Scale Integration

Bisethylacetoacetato Cu(II), referred to as Cu(etac)2, was synthesized and used as a novel metal-organic precursor to produce Cu films by PECVD processing. Cu(etac)2 is a nonfluoride compound that is solid at room temperature with reasonable volatility at 120–150 °C of 0.8 Torr. Effects of selected process variables on the characteristics of Cu film deposition were studied. Considered variables were plasma power, hydrogen flow rate, deposition time, substrate temperature, and precursor temperature. The process conditions to give Cu films of a high quality were determined. The electrical resistivity approached 2 μΩ · cm as the Cu film thickness became greater than 2500 Å. The conformality of the Cu film deposition by PECVD was sufficient to result in complete via-hole fillings of wafers patterned for 256 Mb DRAM.

Plasma Enhanced Chemical Vapor Deposition of Zirconium Nitride Thin Films

1995 ◽  
Vol 410 ◽  
Author(s):  
Lauren M. Atagi ◽  
John A. Samuels ◽  
David C. Smith ◽  
David M. Hoffman
Keyword(s):  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Zirconium Nitride ◽  
Transmission Spectra ◽  
X Ray Diffraction ◽  
Organic Precursor ◽  
Flow Rates ◽  
X Ray ◽  
Metal Organic ◽  
Quartz Substrates

ABSTRACTDepositions of high quality zirconium nitride, (Zr3N4), films using the metal-organic precursor Zr(Net2)4 were carried out in a microwave argon/ammonia plasma (2.45 GHz). The films were deposited on crystalline silicon wafers and quartz substrates at temperatures of 200–400 °C. The transparent yellow films have resistivity values greater than MΩ cm. The stoichiometry is N/Zr = 1.3, with less than 5 atom % carbon and little of no oxygen. The hydrogen content is less than 9 atom %, and it does not vary with deposition temperature. The growth rates range from 600 to 1200 Å/min, depending on the flow rates and precursor bubbler temperature. X-ray diffraction studies show a Zr3N4 film deposited at 400 °C is polycrystalline with some (220) orientation. The crystallite size is approximately 30 Å. The band gap, as estimated from transmission spectra, is 3.1 eV.

Excimer Laser-Induced Deposition of InP and Indium-Oxide Films

1983 ◽  
Vol 29 ◽  
Author(s):  
V. M. Donnelly ◽  
M. Geva ◽  
J. Long ◽  
R. F. Karlicek
Keyword(s):  
Gas Phase ◽  
Excimer Laser ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Normal Incidence ◽  
Organic Chemical ◽  
Organic Precursor ◽  
Composition Control ◽  
Metal Organic ◽  
Carbon Inclusion

ABSTRACTInP and In-oxide films have been deposited on quartz, GaAs, and InP substrates by excimer laser-induced photodecomposition of (CH3)3InP(CH3)3 and P(CH3)3 vapors at 193 nm. The oxide film refractive index and stoichiometry are close to In2O3. Phosphorus incorporation in the films was greatly enhanced by focusing the laser beam to promote multiple-photon dissociation processes. These conditions also lead to enhanced carbon inclusion in the films, due to formation of species such as CH and CH2 in the gas phase. However, this carbon inclusion could be suppressed by focusing the beam onto the surface at normal incidence. In the irradiated zone InP could be deposited with P(CH3)3-to-(CH3)3InP(CH3)3 ratios of only ∼1:1. The technique offers several potential advantages over conventional metal-organic chemical vapor deposition (MOCVD), including lower temperature, enhanced rates, safer gases, and threedimensional film composition control.Strong atomic In emission is observed in the gas-phase above the depositing film, due to a multiple photon dissociation process. Gasphase fluorescence from P, CH, and C was also observed. These emissions give insight into the photodecomposition mechanism and also serve as a monitor of metal-organic precursor concentrations.

Plasma enhanced chemical vapor deposition of silicon nitride films from a metal-organic precursor

1994 ◽  
Vol 9 (12) ◽  
pp. 3019-3021 ◽  
Author(s):  
David M. Hoffman ◽  
Sri Prakash Rangarajan ◽  
Satish D. Athavale ◽  
Shashank C. Deshmukh ◽  
Demetre J. Economou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Organic Precursor ◽  
Silicon Nitride Films ◽  
Metal Organic ◽  
Substrate Temperatures ◽  
Uniform Composition

Silicon nitride films are grown by plasma enhanced chemical vapor deposition from tetrakis(dimethylamido)silicon, Si(NMe2)4, and ammonia precursors at substrate temperatures of 200-400 °C. Backscattering spectrometry shows that the films are close to stoichiometric. Depth profiling by Auger electron spectroscopy shows uniform composition and no oxygen or carbon contamination in the bulk. The films are featureless by scanning electron microscopy under 100,000X magnification.

scholarly journals Fabrication of SnS nanowalls via pulsed plasma-enhanced chemical vapor deposition using a metal–organic single-source precursor

2019 ◽  
Vol 7 (32) ◽  
pp. 10098-10110 ◽  
Author(s):  
Charlotte Ruhmlieb ◽  
Young Joo Lee ◽  
Christian Strelow ◽  
Tobias Kipp ◽  
Alf Mews
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Pulsed Plasma ◽  
Single Source ◽  
Single Source Precursor ◽  
Metal Organic ◽  
Pulsed Rf

Vaporization of the solid bis(diethyldithiocarbamato)tin(ii) into pulsed RF plasma leads to the growth of crystalline, highly conductive SnS nanowalls.

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