Fourier Transform Infrared Analysis of Evolved Gases: Determination of Activation Energies

1988 ◽  
Vol 42 (7) ◽  
pp. 1253-1258 ◽  
Author(s):  
Luis Antonio Sanchez ◽  
Mimi Y. Keating
Keyword(s):  
Activation Energy ◽  
Fourier Transform ◽  
Calcium Oxalate ◽  
Evolved Gas Analysis ◽  
Fourier Transform Infrared ◽  
Calcium Oxalate Monohydrate ◽  
Activation Energies ◽  
Infrared Analysis ◽  
Rate Dependency

The use of Fourier transform infrared evolved-gas analysis (FT-IR/EGA) to determine activation energies from the heating rate dependency of the maximum evolution of effluent is demonstrated. The mathematical considerations are similar to those normally applied to differential thermal analysis. The determination of the activation energy is substantiated with dehydration of calcium oxalate monohydrate during pyrolysis; the results are compared with thermogravimetry analysis results, and indicate that the activation energy in the dehydration step in the pyrolysis of calcium oxalate monohydrate is temperature dependent.

Fourier Transform Infrared Analysis of the Ammoxidation of 4-Methylthiazole over a Metal Oxide Catalyst

1983 ◽  
Vol 37 (3) ◽  
pp. 279-284
Author(s):  
David D. Saperstein
Keyword(s):  
Activation Energy ◽  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Metal Oxide ◽  
Oxide Catalyst ◽  
Fourier Transform Infrared ◽  
Infrared Analysis ◽  
Gaseous Products ◽  
Unexpected Reaction ◽  
On Line

The gaseous products of the reaction of 4-methylthiazole (4-MT), air, 14NH3, and 15NH3 have been analyzed by on-line Fourier transform infrared spectroscopy. The products observed, including those due to partial and full oxidation, account for 95 to 98% of the starting 4-MT. Estimates of the activation energy (20 kcal/mol) and the excess heat due to combustion (350 kcal/mol/mol of 4-MT combusted) have been calculated. In addition, we have observed an unexpected reaction that is formally bimolecular in 4-MT.

Fourier transform infrared analysis of ceramic powders: Quantitative determination of alpha, beta, and amorphous phases of silicon nitride

1989 ◽  
Vol 4 (2) ◽  
pp. 399-403 ◽  
Author(s):  
T. K. Trout ◽  
J. M. Bellama ◽  
F. E. Brinckman ◽  
R. A. Faltynek
Keyword(s):  
Fourier Transform ◽  
Silicon Nitride ◽  
Fourier Transform Infrared ◽  
Ternary Mixtures ◽  
Infrared Analysis ◽  
Analytical Technique ◽  
Amorphous Phases ◽  
Ft Ir ◽  
Alpha Beta

Fourier transform infrared spectroscopy (FT–IR) forms the basis for determining the morphological composition of mixtures containing alpha, beta, and amorphous phases of silicon nitride. The analytical technique, involving multiple linear regression treatment of Kubelka-Munk absorbance values from diffuse reflectance measurements, yields specific percent composition data for the amorphous phase as well as the crystalline phases in ternary mixtures of 0–1% by weight Si3N4 in potassium bromide.

Fourier transform infrared analysis of commercial formulations for Varroa treatment

2017 ◽  
Vol 9 (46) ◽  
pp. 6574-6582
Author(s):  
K. Bounaas ◽  
N. Bouzidi ◽  
Y. Daghbouche ◽  
S. Garrigues ◽  
M. de la Guardia ◽  
...  
Keyword(s):  
Fourier Transform ◽  
Simultaneous Determination ◽  
Fourier Transform Infrared ◽  
Infrared Analysis

Simultaneous determination of monoterpenes in commercial formulations.

Mid Infrared Photoconductivity Spectra of Donor Impurities in Hexagonal Silicon Carbide

1999 ◽  
Vol 572 ◽  
Author(s):  
R. J. Linville ◽  
G. J. Brown ◽  
W. C. Mitchel ◽  
A. Saxler ◽  
R. Perrin
Keyword(s):  
Activation Energy ◽  
Silicon Carbide ◽  
Fourier Transform ◽  
Hall Effect ◽  
Sharp Increase ◽  
Fourier Transform Infrared ◽  
Activation Energies ◽  
Temperature Dependent ◽  
Mid Infrared ◽  
Donor And Acceptor

ABSTRACTMid-infrared photoconductivity (PC) is a useful technique for identifying and investigating donor and acceptor centers in many semiconductors. This is especially true when the PC results are combined with other measurements such as Hall Effect and DLTS. We report on the first Fourier Transform Infrared (FTIR) photoconductivity spectra for n-type 6H and 4H-SiC. The samples studied had temperature dependent Hall activation energies around 45 meV and 85 meV in the 4H samples, and a single activation energy of 106 meV in the 6H. For the 4H samples, the PC spectra showed an increase in photoresponse between 40 and 47 meV, with another sharp increase at 120 meV. In the 6H-SiC, the photoresponse also had a rapid increase at 120 meV, and at 77 meV in one sample. The photoresponse spectra of the n-type 4H and 6H-SiC samples were distinctly different in the mid-infrared.

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