scholarly journals Solution growth of chalcopyrite Cu(In1−x Ga x )Se2 single crystals for high open-circuit voltage photovoltaic device

2021 ◽  
Vol 40 (1) ◽  
pp. 439-445
Author(s):  
Akira Nagaoka ◽  
Yusuke Shigeeda ◽  
Kensuke Nishioka ◽  
Taizo Masuda ◽  
Kenji Yoshino
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Open Circuit Voltage ◽  
Secondary Phase ◽  
Open Circuit ◽  
Bulk Single Crystal ◽  
Fundamental Properties ◽  
Traveling Heater Method ◽  
Absorbing Layer ◽  
P Type

Abstract I–III–VI2 Chalcopyrite Cu(In1−x Ga x )Se2 (CIGS) has attracted attention as absorbing layer in photovoltaic (PV) device. In this study, we investigated the fundamental properties of CIGS single crystals, and fabricated single crystal-based PV device. CIGS single crystals without secondary phase were successfully grown by In-solvent traveling heater method (THM). The conversion of conduction type from n- to p-type can be observed above 0.3 of Ga ratio x because of high acceptor defect concentration. PV device based on high-quality CIGS bulk single crystal demonstrates high open-circuit voltage of 0.765 V with the efficiency of 12.6%.

Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers

2015 ◽  
Vol 5 (6) ◽  
pp. 1757-1761 ◽  
Author(s):  
Daniel Amkreutz ◽  
William D. Barker ◽  
Sven Kuhnapfel ◽  
Paul Sonntag ◽  
Onno Gabriel ◽  
...  
Keyword(s):  
Solar Cells ◽  
Liquid Phase ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Silicon Solar Cells ◽  
P Type

A p-Type NiO-Based Dye-Sensitized Solar Cell with an Open-Circuit Voltage of 0.35 V

2009 ◽  
Vol 48 (24) ◽  
pp. 4402-4405 ◽  
Author(s):  
Elizabeth A. Gibson ◽  
Amanda L. Smeigh ◽  
Loïc Le Pleux ◽  
Jérôme Fortage ◽  
Gerrit Boschloo ◽  
...  
Keyword(s):  
Solar Cell ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Dye Sensitized Solar Cell ◽  
Dye Sensitized ◽  
P Type

Built-in Potential and Open Circuit Voltage of Heterojunction CuIn1-xGaxSe2 Solar Cells

2005 ◽  
Vol 865 ◽  
Author(s):  
Akimasa Yamada ◽  
Koji Matsubara ◽  
Keiichiro Sakurai ◽  
Shogo Ishizuka ◽  
Hitoshi Tampo Hajime ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conduction Band ◽  
Fermi Energy ◽  
Open Circuit Voltage ◽  
Material Selection ◽  
Open Circuit ◽  
Flat Band ◽  
Band Energy ◽  
Low X ◽  
P Type

AbstractThe reasons why the open circuit voltage (Voc) of high-x CuIn1-xGaxSe2 (CIGS)/ZnO solar cells remain low are discussed. Here it is shown that the Voc ceiling can be interpreted simply on the basis of a model that the valence-band energy (Ev) of CIGS is almost immovable irrespective of x. When the conduction-band energy (Ec) of ZnO is lower than that of high-x CIGS (DEc<0), the built-in potential (Vbi) of a CIGS/ZnO junction is equivalent to the flat-band potential (Vbi) that arises from the separation between the Fermi energies of the two materials. If the Ev (and therefore the Fermi energy) of p-type CIGS is constant with increasing x, the Vbi and Voc that follows the Vbi remain unchanged since the Fermi energy of ZnO is constant. This unchangeable Voc reduces the conversion efficiency of high-x CIGS cells in cooperation with reduced photocurrents due to a larger bandgap. A positive offset, ΔEc>o gives rise to a photoelectrons barrier in the conduction-band that partially cancels Voc, thus the Voc of a low-x CIGS cell is governed by the Ec of CIGS. Based upon this concept, a material selection guideline is given for the windows and transparent electrodes appropriate for high-x CIGS absorbers-based solar cells.

Performance of Vibration Power Generators Using Single Crystal and Polycrystal Magnetic Cores of Fe–Ga Alloys

2021 ◽  
Vol 1016 ◽  
pp. 453-457
Author(s):  
Shun Fujieda ◽  
Naoki Gorai ◽  
Toru Kawamata ◽  
Rayko Simura ◽  
Tsuguo Fukuda ◽  
...  
Keyword(s):  
Single Crystal ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Vibration Energy ◽  
Direction Parallel ◽  
Power Generator ◽  
Power Generators ◽  
Magnetic Cores ◽  
Maximum Value ◽  
Crystal Core

The performance of a vibration power generator using a single crystal core of Fe–Ga alloy was compared with that of a generator using a Fe–Ga alloy polycrystal core with a similar Ga concentration. When the generator using the polycrystal core was forcibly vibrated by 1-G acceleration, the vibration frequency dependence of the open-circuit voltage showed a peak with a maximum value of about 0.14 V at the first resonance frequency due to the inverse magnetostrictive effect. On the other hand, the generator using a single crystal core with a <100> direction parallel to the external stress direction exhibited a maximum value of about 0.26 V, about two-times larger than that of the device using the polycrystal core. Consequently, a vibration energy generator using a single crystal core of Fe–Ga alloy has advantages in performance over a generator using a polycrystal core.

Increase in Open-circuit Voltage and Improved Stability of Organic Solar Cells by Inserting a Molybdenum Trioxide Buffer Layer

2009 ◽  
Vol 1154 ◽  
Author(s):  
Hideyuki Murata ◽  
Yoshiki Kinoshita ◽  
Yoshihiro Kanai ◽  
Toshinori Matsushima ◽  
Yuya Ishii
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Organic Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Type Material ◽  
Type Layer ◽  
Improved Stability ◽  
The Stability ◽  
P Type

AbstractWe report the increase in open-circuit voltage (Voc) by inserting of MoO3 layer on ITO substrate to improve built-in potential of organic solar cells (OSCs). In the OSCs using 5,10,15,20-tetraphenylporphyrine (H2TPP) as a p-type material and C60 as a n-type material, the Voc effectively increased from 0.57 to 0.97 V as increasing MoO3 thickness. The obtained highest Voc (0.97 V) is consistent with the theoretical value estimated from the energy difference between the LUMO (−4.50 eV) of C60 and the HOMO (−5.50 eV) of H2TPP layer. Importantly, the enhancement in the Voc was achieved without affecting the short-circuit current density (Jsc) and the fill-factor (FF). Thus, the power conversion efficiency of the device linearly increased from 1.24% to 1.88%. We also demonstrated that a MoO3 buffer layer enhances the stability of OSCs after photo-irradiation. We have investigated the stability of OSCs using H2TPP and N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine as a p-type layer. The both devices with MoO3 layer showed improved stability. These results clearly suggest that the interface at ITO/p-type layer affects the device stability.

scholarly journals Lindqvist polyoxometalates as electrolytes in p-type dye sensitized solar cells

2019 ◽  
Vol 3 (1) ◽  
pp. 96-100 ◽  
Author(s):  
Tijmen M. A. Bakker ◽  
Simon Mathew ◽  
Joost N. H. Reek
Keyword(s):  
Solar Cells ◽  
Power Conversion Efficiency ◽  
Open Circuit Voltage ◽  
Power Conversion ◽  
Dye Sensitized Solar Cells ◽  
Open Circuit ◽  
Dye Sensitized ◽  
Redox Couples ◽  
P Type ◽  
Sensitized Solar Cells

The development of new redox couples provides a clear strategy to improve power conversion efficiency (PCE) in p-type dye-sensitized solar cells (p-DSSCs) through enabling improvements in open-circuit voltage (VOC).

Enhanced open-circuit voltage in p-type passivated emitter and rear cell by doped polysilicon layer as passivation contact

Solar Energy ◽  
2020 ◽  
Vol 207 ◽  
pp. 436-440
Author(s):  
Yajun Xu ◽  
Honglie Shen ◽  
Zhi Yang ◽  
Qingzhu Wei ◽  
Zhichun Ni ◽  
...  
Keyword(s):  
Open Circuit Voltage ◽  
Open Circuit ◽  
Polysilicon Layer ◽  
P Type
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