Current conduction mechanisms in thermal nitride and dry gate oxide grown on 4H-silicon carbide (SiC)

2017 ◽  
Vol 20 (1) ◽  
Author(s):  
Li Liu ◽  
Yin-Tang Yang
Keyword(s):  
Barrier Height ◽  
Conduction Mechanism ◽  
Gate Oxide ◽  
Annealed Sample ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
Electrical Fields ◽  
Conduction Mechanisms ◽  
Current Conduction

AbstractCurrent conduction mechanisms of SiC metal-oxide-semiconductor (MOS) capacitors on n-type 4H-SiC with or without NO annealing have been investigated in this work. It has been revealed that Fowler-Nordheim (FN) tunneling is the dominating current conduction mechanism in high electrical fields, with barrier height of 2.67 and 2.54 eV respectively for samples with NO and without NO annealing. A higher barrier height for NO-annealed sample indicates the effect of N element on the SiC/SiO

Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N2O Nitridation

2009 ◽  
Vol 615-617 ◽  
pp. 557-560 ◽  
Author(s):  
Takuma Suzuki ◽  
Junji Senzaki ◽  
Tetsuo Hatakeyama ◽  
Kenji Fukuda ◽  
Takashi Shinohe ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Band Offset ◽  
Mos Capacitors ◽  
Conduction Band Offset ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Reliability ◽  
Mos Gate

The oxide reliability of metal-oxide-semiconductor (MOS) capacitors on 4H-SiC(000-1) carbon face was investigated. The gate oxide was fabricated by using N2O nitridation. The effective conduction band offset (Ec) of MOS structure fabricated by N2O nitridation was increased to 2.2 eV compared with Ec = 1.7 eV for pyrogenic oxidation sample of. Furthermore, significant improvements in the oxide reliability were observed by time-dependent dielectric breakdown (TDDB) measurement. It is suggested that the N2O nitridation as a method of gate oxide fabrication satisfies oxide reliability on 4H-SiC(000-1) carbon face MOSFETs.

Monitoring on Creation and Annihilation of Interface Trap Levels with NO Oxidation, Re-Oxidation and N2 Annealing with Conductance Measurements

2020 ◽  
Vol 1004 ◽  
pp. 595-600
Author(s):  
Xiang Zhou ◽  
Collin W. Hitchcock ◽  
Rajendra P. Dahal ◽  
Gyanesh Pandey ◽  
Jacob Kupernik ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
No Oxidation ◽  
Oxide Semiconductor ◽  
Electron Trapping ◽  
Process Conditions ◽  
Interface Trap ◽  
Annihilation Process ◽  
Mos Capacitors ◽  
Trap Levels

We have determined, using the Conductance-Frequency (G-ω) Technique, the creation and annihilation process of the 3 interface trap levels (OX, OX’ and NI levels) previously reported [1-3] and their possible correlation to inversion electron trapping and mobilities. The measurements were carried out on various 4H-SiC Metal Oxide Semiconductor (MOS) capacitors that have been processed using several gate oxide processes [2,5,6]. Our analysis focus on the correlation of the interface trap levels on the process conditions so as to first understand and then control their formation.

Conduction Mechanisms at SiO2/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N2O

2016 ◽  
Vol 858 ◽  
pp. 705-708
Author(s):  
Patrick Fiorenza ◽  
Filippo Giannazzo ◽  
Alessia Frazzetto ◽  
Alfio Guarnera ◽  
Mario Saggio ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Temperature Dependent ◽  
Post Deposition Annealing ◽  
Mos Capacitors ◽  
Gate Current ◽  
Conduction Mechanisms ◽  
Current Voltage ◽  
Hole Conduction ◽  
Current Conduction ◽  
Post Deposition

This paper reports on the conduction mechanisms through the gate oxide and trapping effects at SiO2/4H-SiC interfaces in MOS-based devices subjected to post deposition annealing in N2O. The phenomena were studied by temperature dependent current–voltage measurements. The analysis of both n and p-MOS capacitors and of n-channel MOSFETs operating in the “gate-controlled-diode” configuration revealed an anomalous hole conduction behaviour through the SiO2/4H-SiC interface, with the onset of current conduction moving towards more negative values during subsequent voltage sweeps. The observed gate current instabilities upon subsequent voltage sweeps were deeply investigated by temperature dependent cyclic gate current measurements. The results were explained by the charge-discharge mechanism of hole traps in the oxide.

Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide

2010 ◽  
Vol 645-648 ◽  
pp. 515-518 ◽  
Author(s):  
Dai Okamoto ◽  
Hiroshi Yano ◽  
Yuki Oshiro ◽  
Tomoaki Hatayama ◽  
Yukiharu Uraoka ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Direct Oxidation ◽  
Mos Capacitors

Characteristics of metal–oxide–semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated by direct oxidation of C-face 4H-SiC in NO were investigated. It was found that nitridation of the C-face 4H-SiC MOS interface generates near-interface traps (NITs) in the oxide. These traps capture channel mobile electrons and degrade the performance of MOSFETs. The NITs can be reduced by unloading the samples at room temperature after oxidation. It is important to reduce not only the interface states but also the NITs to fabricate high-performance C-face 4H-SiC MOSFETs with nitrided gate oxide.

Charge trapping and current-conduction mechanisms of metal–oxide–semiconductor capacitors with LaxTay dual-doped HfON dielectrics

2010 ◽  
Vol 54 (10) ◽  
pp. 1197-1203 ◽  
Author(s):  
Chin-Lung Cheng ◽  
Jeng-Haur Horng ◽  
Kuei-Shu Chang-Liao ◽  
Jin-Tsong Jeng ◽  
Hung-Yang Tsai
Keyword(s):  
Metal Oxide ◽  
Charge Trapping ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Conduction Mechanisms ◽  
Current Conduction
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