scholarly journals A High-Speed Fully Digital Phase-Synchronizer Implemented in a Field Programmable Gate Array Device

2017 ◽  
Vol 24 (3) ◽  
pp. 537-550 ◽  
Author(s):  
Robert Frankowski ◽  
Dariusz Chaberski ◽  
Marcin Kowalski ◽  
Marek Zieliński
Keyword(s):  
Integrated Circuit ◽  
High Speed ◽  
Quantum Physics ◽  
Single Photon ◽  
Photon Number ◽  
Simultaneous Recording ◽  
Wide Frequency Range ◽  
Coincidence Detection ◽  
Clock Period ◽  
Digital Phase

AbstractMost systems used in quantum physics experiments require the efficient and simultaneous recording different multi-photon coincidence detection events. In such experiments, the single-photon gated counting systems can be applicable. The main sources of errors in these systems are both instability of the clock source and their imperfect synchronization with the excitation source. Below, we propose a solution for improvement of the metrological parameters of such measuring systems. Thus, we designed a novel integrated circuit dedicated to registration of signals from a photon number resolving detectors including a phase synchronizer module. This paper presents the architecture of a high-resolution (~60 ps) digital phase synchronizer module cooperating with a multi-channel coincidence counter. The main characteristic feature of the presented system is its ability to fast synchronization (requiring only one clock period) with the measuring process. Therefore, it is designed to work with various excitation sources of a very wide frequency range. Implementation of the phase synchronizer module in an FPGA device enabled to reduce the synchronization error value from 2.857 ns to 214.8 ps.

scholarly journals Chemistry integrated circuit: chemical system on a complementary metal oxide semiconductor integrated circuit

2014 ◽  
Vol 372 (2012) ◽  
pp. 20130109 ◽  
Author(s):  
Kazuo Nakazato
Keyword(s):  
Integrated Circuit ◽  
High Speed ◽  
Large Scale ◽  
Sensor Array ◽  
Single Photon ◽  
Sensor Arrays ◽  
Oxide Semiconductor ◽  
Chemical System ◽  
Photoelectric Conversion ◽  
Integrated Sensor

By integrating chemical reactions on a large-scale integration (LSI) chip, new types of device can be created. For biomedical applications, monolithically integrated sensor arrays for potentiometric, amperometric and impedimetric sensing of biomolecules have been developed. The potentiometric sensor array detects pH and redox reaction as a statistical distribution of fluctuations in time and space. For the amperometric sensor array, a microelectrode structure for measuring multiple currents at high speed has been proposed. The impedimetric sensor array is designed to measure impedance up to 10 MHz. The multimodal sensor array will enable synthetic analysis and make it possible to standardize biosensor chips. Another approach is to create new functional devices by integrating molecular systems with LSI chips, for example image sensors that incorporate biological materials with a sensor array. The quantum yield of the photoelectric conversion of photosynthesis is 100%, which is extremely difficult to achieve by artificial means. In a recently developed process, a molecular wire is plugged directly into a biological photosynthetic system to efficiently conduct electrons to a gold electrode. A single photon can be detected at room temperature using such a system combined with a molecular single-electron transistor.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

The Radio Probe™: A New Measurement Tool for High Speed Integrated Circuits

2005 ◽  
Author(s):  
Mark Kimball
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
High Speed ◽  
Attenuation Factor ◽  
Cost Effective ◽  
Frequency Measurement ◽  
Single Frequency ◽  
Measurement Tool ◽  
Probe Design ◽  
Differential Measurement

Abstract This article presents a novel tool designed to allow circuit node measurements in a radio frequency (RF) integrated circuit. The discussion covers RF circuit problems; provides details on the Radio Probe design, which achieves an input impedance of 50Kohms and an overall attenuation factor of 0 dB; and describes signal to noise issues in the output signal, along with their improvement techniques. This cost-effective solution incorporates features that make it well suited to the task of differential measurement of circuit nodes within an RF IC. The Radio Probe concept offers a number of advantages compared to active probes. It is a single frequency measurement tool, so it complements, rather than replaces, active probes.

scholarly journals High-enthalpy hypersonic flows

2020 ◽  
Vol 2 (1) ◽  
Author(s):  
Joseph J. S. Shang ◽  
Hong Yan
Keyword(s):  
Hypersonic Flow ◽  
High Speed ◽  
Quantum Physics ◽  
Nonequilibrium Thermodynamic ◽  
Strong Shock ◽  
Hypersonic Flows ◽  
Electrically Conducting ◽  
High Enthalpy ◽  
Speed Range ◽  
Flow Theories

Abstract Nearly all illuminating classic hypersonic flow theories address aerodynamic phenomena as a perfect gas in the high-speed range and at the upper limit of continuum gas domain. The hypersonic flow is quantitatively defined by the Mach number independent principle, which is derived from the asymptotes of the Rankine-Hugoniot relationship. However, most hypersonic flows encounter strong shock-wave compressions resulting in a high enthalpy gas environment that always associates with nonequilibrium thermodynamic and quantum chemical-physics phenomena. Under this circumstance, the theoretic linkage between the microscopic particle dynamics and macroscopic thermodynamics properties of gas is lost. When the air mixture is ionized to become an electrically conducting medium, the governing physics now ventures into the regimes of quantum physics and electromagnetics. Therefore, the hypersonic flows are no longer a pure aerodynamics subject but a multidisciplinary science. In order to better understand the realistic hypersonic flows, all pertaining disciplines such as the nonequilibrium chemical kinetics, quantum physics, radiative heat transfer, and electromagnetics need to bring forth.

Aluminum Reflow Sputtering

MRS Bulletin ◽  
1995 ◽  
Vol 20 (11) ◽  
pp. 53-56 ◽  
Author(s):  
Kuniko Kikuta
Keyword(s):  
Integrated Circuit ◽  
High Speed ◽  
Lower Cost ◽  
High Reliability ◽  
Device Fabrication ◽  
Damascene Process ◽  
Aspect Ratios ◽  
Multi Level ◽  
Poor Adhesion ◽  
Lower Resistivity

The scaling of integrated-circuit device dimensions in the horizontal direction has caused an increase in aspect ratios of contact holes and vias without a corresponding scaledown in vertical dimensions. Conventional sputtering has become unreliable for handling higher aspect-ratio via/contact holes because of its poor step coverage. Several studies have attempted to overcome this problem by using W-CVD and reflow technology. The W-CVD is used for practical device fabrications. However, this technique has several problems such as poor adhesion to SiO2, poor W surface morphology, greater resistivity than Al, and the need of an etch-back process.Al reflow technology using a conventional DC magnetron sputtering system can simplify device-fabrication processes and achieve high reliability without Al/W interfaces. In particular, the Al reflow technology is profitable for multi-level interconnections in combination with a damascene process by using Al chemical mechanical polishing (CMP). These interconnections are necessary for miniaturized and high-speed devices because they provide lower resistivity than W and simplify fabrication processes, resulting in lower cost.This article describes recent Al reflow sputtering technologies as well as application of via and interconnect metallization.

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