Functionalization of the Si(1 1 1) 7 × 7 substrate with coronene molecules using simple molecular source

Abstract The present paper aims at describing a source designed and constructed to generate an organic molecular beam under ultrahigh vacuum conditions. The presented construction solution of the evaporation source allows for independent deposition of three different kinds of molecules. The probability of molecules fragmentation is minimized by using a thermocouple being in contact with a molecular crucible, which enables precise temperature control. In addition, cleanness and molecular beam density are monitored using a quadrupole mass spectrometer and quartz microbalance, respectively. The operational parameters of the molecular source are optimized and deposition rates are measured for the coronene molecule in the sublimation temperature range between 430 K and 460 K. The analysis of scanning tunneling microscope images of the Si(1 1 1) 7 × 7 substrate covered with the sub-monolayer of coronene molecules and comparison with previously published data has been used for verification of the molecular source operation.

Download Full-text

Connection of a Scanning Tunneling Microscope with a Molecular Beam Epitaxy Chamber and Analysis of the Vibration Isolation System

Journal de Physique III ◽

10.1051/jp3:1995231 ◽

1995 ◽

Vol 5 (11) ◽

pp. 1871-1885 ◽

Cited By ~ 3

Author(s):

P. Krapf ◽

J.P. Lainé(*) ◽

Y. Robach ◽

L. Porte

Keyword(s):

Molecular Beam Epitaxy ◽

Scanning Tunneling Microscope ◽

Molecular Beam ◽

Vibration Isolation ◽

Scanning Tunneling ◽

Isolation System ◽

Vibration Isolation System ◽

Tunneling Microscope ◽

Molecular Beam Epitaxy Chamber

Download Full-text

The Dynamical Transition to Step-Flow Growth During Homoepitaxy of GaAs (001)

MRS Proceedings ◽

10.1557/proc-312-15 ◽

1993 ◽

Vol 312 ◽

Cited By ~ 1

Author(s):

B. G. Orr ◽

J. Sudijono ◽

M. D. Johnson

Keyword(s):

Scanning Tunneling Microscope ◽

Molecular Beam ◽

Scanning Tunneling ◽

Oscillatory Regime ◽

Step Flow ◽

Microscope Images ◽

Step Density ◽

Step Flow Growth ◽

Direct Correspondence ◽

Density Results

AbstractThe evolution of surface morphology of molecular-beam-epitaxy-grown GaAs (001) has been studied by scanning tunneling microscope. Images show that in the early stages of deposition the morphology oscillates between one -with twodimensional nucleation and coalescing islands, i.e. flat terraces. After the initial oscillatory regime, the system evolves to a dynamical steady state. This state is characterized by a constant step density. As such, the growth mode can be called a generalized step flow. Comparison with RHEED shows that there is a direct correspondence between the surface step density and the RHEED specular intensity. An increase in step density results in a decrease in specular intensity. Additionally, further deposition beyond 120 monolayers (up to 1450 monolayers) display a slowly increasing surface roughness.

Download Full-text

Growth on (001) and vicinal (001) GaAs surfaces in a combined scanning tunneling microscope/molecular-beam epitaxy system

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585499 ◽

1991 ◽

Vol 9 (2) ◽

pp. 938 ◽

Cited By ~ 28

Author(s):

M. D. Pashley

Keyword(s):

Molecular Beam Epitaxy ◽

Scanning Tunneling Microscope ◽

Molecular Beam ◽

Scanning Tunneling ◽

Tunneling Microscope ◽

Molecular Beam Epitaxy System

Download Full-text

Scanning tunneling microscope investigations of organic heterostructures prepared by a combination of self-assembly and molecular beam epitaxy

Surface Science ◽

10.1016/s0039-6028(99)01083-3 ◽

2000 ◽

Vol 445 (2-3) ◽

pp. 368-379 ◽

Cited By ~ 24

Author(s):

R. Staub ◽

M. Toerker ◽

T. Fritz ◽

T. Schmitz-Hübsch ◽

F. Sellam ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Self Assembly ◽

Scanning Tunneling Microscope ◽

Molecular Beam ◽

Scanning Tunneling ◽

Tunneling Microscope

Download Full-text

Scanning tunneling microscope-induced and scanning electron microscope-induced cathodoluminescence of GaN grown by molecular beam epitaxy

CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics ◽

10.1109/cleo.1997.602317 ◽

2005 ◽

Author(s):

S. Evoy ◽

H.G. Craighead ◽

W.A. Davis ◽

T.J. Eustis ◽

W.J. Schaff ◽

...

Keyword(s):

Electron Microscope ◽

Molecular Beam Epitaxy ◽

Scanning Electron Microscope ◽

Scanning Tunneling Microscope ◽

Molecular Beam ◽

Scanning Tunneling ◽

Tunneling Microscope ◽

Scanning Electron

Download Full-text

Growth and Decay of Germanium Islands on Silicon Studied by High Temperature Stm

MRS Proceedings ◽

10.1557/proc-583-155 ◽

1999 ◽

Vol 583 ◽

Author(s):

M. Kästner ◽

B. Voigtländer

Keyword(s):

High Temperature ◽

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Scanning Tunneling Microscope ◽

Strain Energy ◽

Molecular Beam ◽

Three Dimensional ◽

Scanning Tunneling ◽

Two Dimensional ◽

Tunneling Microscope

AbstractWe use a scanning tunneling microscope (STM) capable of imaging the growing layer at high temperature during molecular beam epitaxy (MBE) to study the epitaxial growth of Germanium on Silicon and the decay of Ge islands. The periodicity of the (2×N) reconstruction of two-dimensional Ge layers on Si(001) is measured as function of the Ge coverage. Strain energy drives the formation of the (2×N) reconstruction and Si/Ge intermixing. A comparison to total energy calculations predicting the periodicity of the (2×N) reconstruction is used to estimate the amount of Si-Ge intermixing near the surface. The evolution of the size and shape of individual “hut clusters” is measured and explained by kinetically self-limiting growth. The relaxation of kinetically a determined morphology towards equilibrium is followed for a Ge layer on Si(111). Strained two-dimensional as well as partially relaxed three-dimensional islands dissolve and are soaked up by larger three-dimensional islands which are dislocated and therefore fully relaxed.

Download Full-text