scholarly journals Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes

Open Physics ◽  
2021 ◽  
Vol 19 (1) ◽  
pp. 467-476
Author(s):  
Sadia Muniza Faraz ◽  
Syed Riaz un Nabi Jafri ◽  
Hashim Raza Khan ◽  
Wakeel Shah ◽  
Naveed ul Hassan Alvi ◽  
...  
Keyword(s):  
Zno Nanorods ◽  
Electrical Characterization ◽  
Nonlinear Behavior ◽  
Annealing Treatment ◽  
Interface State ◽  
Interface States ◽  
State Density ◽  
Interface State Density ◽  
Heterojunction Diodes ◽  
Density Of Interface States

Abstract The effect of post-growth annealing treatment of zinc oxide (ZnO) nanorods on the electrical properties of their heterojunction diodes (HJDs) is investigated. ZnO nanorods are synthesized by the low-temperature aqueous solution growth technique and annealed at temperatures of 400 and 600°C. The as-grown and annealed nanorods are studied by scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. Electrical characterization of the ZnO/Si heterojunction diode is done by current–voltage (I–V) and capacitance–voltage (C–V) measurements at room temperature. The barrier height (ϕ B), ideality factor (n), doping concentration and density of interface states (N SS) are extracted. All HJDs exhibited a nonlinear behavior with rectification factors of 23, 1,596 and 309 at ±5 V for the as-grown, 400 and 600°C-annealed nanorod HJDs, respectively. Barrier heights of 0.81 and 0.63 V are obtained for HJDs of 400 and 600°C-annealed nanorods, respectively. The energy distribution of the interface state density has been investigated and found to be in the range 0.70 × 1010 to 1.05 × 1012 eV/cm2 below the conduction band from E C = 0.03 to E C = 0.58 eV. The highest density of interface states is observed in HJDs of 600°C-annealed nanorods. Overall improved behavior is observed for the heterojunctions diodes of 400°C-annealed ZnO nanorods.

Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs

2011 ◽  
Vol 276 ◽  
pp. 87-93
Author(s):  
Y.Y. Gomeniuk ◽  
Y.V. Gomeniuk ◽  
A. Nazarov ◽  
P.K. Hurley ◽  
Karim Cherkaoui ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Gate Oxide ◽  
Interface State ◽  
Channel Length ◽  
State Density ◽  
Interface State Density ◽  
Mos Capacitors ◽  
Channel Mobility ◽  
Threshold Voltages

The paper presents the results of electrical characterization of MOS capacitors and SOI MOSFETs with novel high-κ LaLuO3 dielectric as a gate oxide. The energy distribution of interface state density at LaLuO3/Si interface is presented and typical maxima of 1.2×1011 eV–1cm–2 was found at about 0.25 eV from the silicon valence band. The output and transfer characteristics of the n- and p-MOSFET (channel length and width were 1 µm and 50 µm, respectively) are presented. The front channel mobility appeared to be 126 cm2V–1s–1 and 70 cm2V–1s–1 for n- and p-MOSFET, respectively. The front channel threshold voltages as well as the density of states at the back interface are presented.

scholarly journals Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode

2020 ◽  
Vol 2020 ◽  
pp. 1-9 ◽  
Author(s):  
Sadia Muniza Faraz ◽  
Wakeel Shah ◽  
Naveed Ul Hassan Alvi ◽  
Omer Nur ◽  
Qamar Ul Wahab
Keyword(s):  
Conduction Band ◽  
Zno Nanorods ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Average Height ◽  
Zno Nanorod ◽  
Heterojunction Diode ◽  
Rectification Factor

The electrical characterization of p-Silicon (Si) and n-Zinc oxide (ZnO) nanorod heterojunction diode has been performed. ZnO nanorods were grown on p-Silicon substrate by the aqueous chemical growth (ACG) method. The SEM image revealed high density, vertically aligned hexagonal ZnO nanorods with an average height of about 1.2 μm. Electrical characterization of n-ZnO nanorods/p-Si heterojunction diode was done by current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G-V) measurements at room temperature. The heterojunction exhibited good electrical characteristics with diode-like rectifying behaviour with an ideality factor of 2.7, rectification factor of 52, and barrier height of 0.7 V. Energy band (EB) structure has been studied to investigate the factors responsible for small rectification factor. In order to investigate nonidealities, series resistance and distribution of interface state density (NSS) below the conduction band (CB) were extracted with the help of I-V and C-V and G-V measurements. The series resistances were found to be 0.70, 0.73, and 0.75 KΩ, and density distribution interface states from 8.38 × 1012 to 5.83 × 1011 eV−1 cm−2 were obtained from 0.01 eV to 0.55 eV below the conduction band.

scholarly journals Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide

2000 ◽  
Vol 640 ◽  
Author(s):  
J. R. Williams ◽  
G. Y. Chung ◽  
C. C. Tin ◽  
K. McDonald ◽  
D. Farmer ◽  
...  
Keyword(s):  
Conduction Band ◽  
Interface State ◽  
Interface States ◽  
State Density ◽  
Interface State Density ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Breakdown Field ◽  
Inversion Mode ◽  
Passivation Process

ABSTRACTThis paper describes the development of a nitrogen-based passivation technique for interface states near the conduction band edge [Dit(Ec)] in 4H-SiC/SiO2. These states have been observed and characterized in several laboratories for n- and p-SiC since their existence was first proposed by Schorner, et al. [1]. The origin of these states remains a point of discussion, but there is now general agreement that these states are largely responsible for the lower channel mobilities that are reported for n-channel, inversion mode 4H-SiC MOSFETs. Over the past year, much attention has been focused on finding methods by which these states can be passivated. The nitrogen passivation process that is described herein is based on post-oxidation, high temperature anneals in nitric oxide. An NO anneal at atmospheric pressure, 1175°C and 200–400sccm for 2hr reduces the interface state density at Ec-E ≅0.1eV in n-4H-SiC by more than one order of magnitude - from > 3×1013 to approximately 2×1012cm−2eV−1. Measurements for passivated MOSFETs yield effective channel mobilities of approximately 30–35cm2/V-s and low field mobilities of around 100cm2/V-s. These mobilities are the highest yet reported for MOSFETs fabricated with thermal oxides on standard 4H-SiC and represent a significant improvement compared to the single digit mobilities commonly reported for 4H inversion mode devices. The reduction in the interface state density is associated with the passivation of carbon cluster states that have energies near the conduction band edge. However, attempts to optimize the the passivation process for both dry and wet thermal oxides do not appear to reduce Dit(Ec) below about 2×1012cm−2eV−1 (compared to approximately 1010cm−2eV−1 for passivated Si/SiO2). This may be an indication that two types of interface states exist in the upper half of the SiC band gap – one type that is amenable to passivation by nitrogen and one that is not. Following NO passivation, the average breakdown field for dry oxides on p-4H-SiC is higher than the average field for wet oxides (7.6MV/cm compared to 7.1MV/cm at room temperature). However, both breakdown fields are lower than the average value of 8.2MV/cm measured for wet oxide layers that were not passivated. The lower breakdown fields can be attributed to donor-like states that appear near the valence band edge during passivation.

scholarly journals Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1698
Author(s):  
R. Padma ◽  
V. Rajagopal Reddy
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Series Resistance ◽  
Forward Bias ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Current Voltage ◽  
Density Of Interface States

The electrical properties of the Ir/Ru Schottky contacts on n-InGaN have been investigated by current-voltage (I-V), capacitance-voltage (C-V), capacitance-frequency (C-f) and conductance-frequency (G-f) measurements. The obtained mean barrier height and ideality factor from I-V are 0.61 eV and 1.89. The built-in potential, doping concentration and barrier height values are also estimated from the C-V measurements and the corresponding values are 0.62 V, 1.20x1017 cm-3 and 0.79 eV, respectively. The interface state density (NSS) obtained from forward bias I-V characteristics by considering the series resistance (RS) values are lower without considering the series resistance (RS). Furthermore, the interface state density (NSS) and relaxation time (tau) are also calculated from the experimental C-f and G-f measurements. The NSS values obtained from the I-V characteristics are almost three orders higher than the NSS values obtained from the C-f and G-f measurements. The experimental results depict that NSS and tau are decreased with bias voltage. The frequency dependence of the series resistance (RS) is attributed to the particular distribution density of interface states. DOI: 10.21883/FTP.2017.12.45189.8340

Accurate Characterization of Interface State Density of SiC MOS Structures and the Impacts on Channel Mobility

2014 ◽  
Vol 778-780 ◽  
pp. 418-423 ◽  
Author(s):  
Hironori Yoshioka ◽  
Takashi Nakamura ◽  
Junji Senzaki ◽  
Atsushi Shimozato ◽  
Yasunori Tanaka ◽  
...  
Keyword(s):  
Interface State ◽  
Interface States ◽  
State Density ◽  
Interface State Density ◽  
Subthreshold Slope ◽  
Field Effect Mobility ◽  
Channel Mobility ◽  
The Common ◽  
Mos Structures

We focused on the inability of the common high-low method to detect very fast interface states, and developed methods to evaluate such states (CψS method). We have investigated correlation between the interface state density (DIT) evaluated by the CψS method and MOSFET performance, and found that the DIT(CψS) was well reflected in MOSFET performance. Very fast interface states which are generated by nitridation restricted the improvement of subthreshold slope and field-effect mobility.

Electrical Characterization of the Oxide-Silicon Carbide Interface by MOS Conductance Technique

1985 ◽  
Vol 54 ◽  
Author(s):  
M. I. Chaudhry ◽  
W. B. Berry
Keyword(s):  
Electrical Characterization ◽  
Surface States ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Conductance Data ◽  
Capacitance Voltage ◽  
Conductance Technique ◽  
Electronic Surface

ABSTRACTThe electrical properties of the SiO2/SiC interface were studied using the conductance vs voltage (G-V) data for the metal-oxide-SiC (MOS) structure. It was found that the dry oxide contained too mjch charge either at the oxide-SiC interface or within the oxide films to obtain useful data. On the other hand the wet oxide invariably resulted in better capacitance and conductance data. The capacitance-voltage data showed that the SiC surface exhibited accumulation, depletion or inversion when the appropriate gate bias was applied. The conductance-voltage data indicate electronic surface states at the oxide-SiC interface. From this conductance data the interface state density has been estimated.

The Effects of Post-Oxidation Anneal Conditions on Interface State Density Near the Conduction Band Edge and Inversion Channel Mobility for SiC MOSFETs

2000 ◽  
Vol 622 ◽  
Author(s):  
G.Y. Chung ◽  
C.C. Tin ◽  
J. R. Williams ◽  
K. McDonald ◽  
M. Di Ventra ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Conduction Band ◽  
Interface State ◽  
Interface States ◽  
State Density ◽  
Interface State Density ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Channel Mobility ◽  
Inversion Channel

ABSTRACTResults are reported for the passivation of interface states near the conduction band edge in n-4H-SiC using post-oxidation anneals in nitric oxide, ammonia and forming gas (N2/5%H2). Anneals in nitric oxide and ammonia reduce the interface state density significantly, while forming gas anneals are largely ineffective. Results suggest that interface states in SiO2/SiC and SiO2/Si have different origins, and a model is described for interface state passivation by nitrogen in the SiO2/SiC system. The inversion channel mobility of 4H-SiC MOSFETs increases with the NO annealing.

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