Investigations on the positioning accuracy of the Nano Fabrication Machine (NFM-100)

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Jaqueline Stauffenberg ◽  
Ingo Ortlepp ◽  
Ulrike Blumröder ◽  
Denis Dontsov ◽  
Christoph Schäffel ◽  
...  

Abstract This contribution deals with the analysis of the positioning accuracy of a new Nano Fabrication Machine. This machine uses a planar direct drive system and has a positioning range up to 100 mm in diameter. The positioning accuracy was investigated in different movement scenarios, including phases of acceleration and deceleration. Also, the target position error of certain movements at different positions of the machine slider is considered. Currently, the NFM-100 is equipped with a tip-based measuring system. This Atomic Force Microscope (AFM) uses self-actuating and self-sensing microcantilevers, which can be used also for Field-Emission-Scanning-Probe-Lithography (FESPL). This process is capable of fabricating structures in the range of nanometres. In combination with the NFM-100 and its positioning range, nanostructures can be analysed and written in a macroscopic range without any tool change. However, the focus in this article is on the measurement and positioning accuracy of the tip-based measuring system in combination with the NFM-100 and is verified by repeated measurements. Finally, a linescan, realised using both systems, is shown over a long range of motion of 30 mm.

Proceedings ◽  
2020 ◽  
Vol 56 (1) ◽  
pp. 34
Author(s):  
Jaqueline Stauffenberg ◽  
Ingo Ortlepp ◽  
Christoph Reuter ◽  
Mathias Holz ◽  
Denis Dontsov ◽  
...  

The focus of this work lies on investigations on a new Nano Fabrication Machine (NFM-100) with a mounted atomic force microscope (AFM). This installed tip-based measuring system uses self-sensing and self-actuated microcantilevers, which can be used especially for field-emission scanning probe lithography (FESPL). The NFM-100 has a positioning range of Ø 100 mm, which offers, in combination with the tip-based measuring system, the possibility to analyse structures over long ranges. Using different gratings, the accuracy and the reproducibility of the NFM-100 and the AFM-system will be shown.


1999 ◽  
Vol 584 ◽  
Author(s):  
A. Notargiacomo ◽  
E. Giovine ◽  
E. Cianci ◽  
V. Foglietti ◽  
F. Evangelisti

AbstractScanning probe assisted nanolithography is a very attractive technique in terms of low-cost, patterning resolution and positioning accuracy. Our approach makes use of a commercial atomic force microscope and silicon probes to build simple nanostructures, such as metal electrode pairs, for application in novel quantum devices.Sub-100 nm patterning was successfully performed using three different techniques: direct material removal, scanning probe assisted mask patterning and local oxidation.


2009 ◽  
Vol 17 (2) ◽  
pp. 30-33
Author(s):  
Jason Haaheim ◽  
Omkar A. Nafday

Dip Pen Nanolithography (DPN) is a scanning probe lithography technique where an atomic force microscope tip is used to transfer molecules to a surface via a solvent meniscus. This technique allows surface patterning on scales of under 100 nanometres. DPN is the nanotechnology analog of the dip pen (also called the quill pen), where the tip of an atomic force microscope cantilever acts as a “pen,” which is coated with a chemical compound or mixture acting as an “ink,” and put in contact with a substrate, the “paper.”DPN enables direct deposition of nanoscale materials onto a substrate in a flexible manner. The vehicle for deposition can include pyramidal scanning probe microscope tips, hollow tips, and even tips on thermally actuated cantilevers. Recent advances have demonstrated massively parallel patterning using two-dimensional arrays of 55,000 tips, depicted below. Applications of this technology currently range through chemistry, materials science, and the life sciences, and include such work as ultra high density biological nanoarrays, additive photomask repair, and brand protection for pharmaceuticals.


Author(s):  
Heiko Wolf ◽  
Yu K. Ryu Cho ◽  
Siegfried Karg ◽  
Philipp Mensch ◽  
Christian Schwemmer ◽  
...  

2019 ◽  
Vol 89 (11) ◽  
pp. 1742
Author(s):  
Д.А. Бизяев ◽  
А.А. Бухараев ◽  
Н.И. Нургазизов ◽  
А.П. Чукланов ◽  
В.М. Масалов

The arrays of permalloy micron-sized particles with configurational anisotropy of shape was made by microsphere lithography technique. The properties of the particles were studied by atomic-force microscopy and magnetic-force microscopy. The magnetization distribution in particles was studied depending on the size of microspheres used in lithography process. The computer simulation of magnetic-force images of the particles was carried out. The quantitative and qualitative comparisons of shapes, sizes and reproducibility of particles fabricated by microsphere lithography and scanning probe lithography was performed.


2019 ◽  
Vol 10 ◽  
pp. 412-418
Author(s):  
Julian Kalb ◽  
Vanessa Knittel ◽  
Lukas Schmidt-Mende

In this article, we demonstrate the position-controlled hydrothermal growth of rutile TiO2 nanorods using a new scanning probe lithography method in which a silicon tip, commonly used for atomic force microscopy, was pulled across an anatase TiO2 film. This process scratches the film causing tiny anatase TiO2 nanoparticles to form on the surface. According to previous reports, these anatase particles convert into rutile nanocrystals and provide the growth of rutile TiO2 nanorods in well-defined areas. Due to the small tip radius, the resolution of this method is excellent and the method is quite inexpensive compared to electron-beam lithography and similar methods providing a position-controlled growth of semiconducting TiO2 nanostructures.


1999 ◽  
Vol 584 ◽  
Author(s):  
H. Sugimura ◽  
T. Hanji ◽  
O. Takai ◽  
K. Fukuda ◽  
H. Misawa

AbstractAn organic film of a few nm in thickness was applied as a resist for photolithography and scanning probe lithography. This resist film was prepared on an oxide-covered Si substrate through chemisorption and spontaneous organization of organosilane molecules, e.g., n-octadecyltrimethoxysilane. The film belongs to a class of materials referred to as self-assembled monolayer (SAM). A SAM/Si sample was irradiated through a photomask with vacuum ultraviolet (VUV) light at a wavelength of 172 nm. The photomask image was transferred to the SAM through the decomposition of the SAM. Furthermore, we demonstrate nano-scale patterning of the SAM using an atomic force microscope (AFM) with an electrically conductive probe. The SAM was electrochemically degraded in the region where the AFM probe had been scanned. Both the photo-printed and AFM-genereated patterns were successfully transferred into the Si substrates based on wet chemical etching or on dry plasma etching. At present, using these VUV and AFM-based lithographies, we have succeeded in fabricating minute features of 2 μm and 20 nm in width, respectively.


Author(s):  
CE Bracker ◽  
P. K. Hansma

A new family of scanning probe microscopes has emerged that is opening new horizons for investigating the fine structure of matter. The earliest and best known of these instruments is the scanning tunneling microscope (STM). First published in 1982, the STM earned the 1986 Nobel Prize in Physics for two of its inventors, G. Binnig and H. Rohrer. They shared the prize with E. Ruska for his work that had led to the development of the transmission electron microscope half a century earlier. It seems appropriate that the award embodied this particular blend of the old and the new because it demonstrated to the world a long overdue respect for the enormous contributions electron microscopy has made to the understanding of matter, and at the same time it signalled the dawn of a new age in microscopy. What we are seeing is a revolution in microscopy and a redefinition of the concept of a microscope.Several kinds of scanning probe microscopes now exist, and the number is increasing. What they share in common is a small probe that is scanned over the surface of a specimen and measures a physical property on a very small scale, at or near the surface. Scanning probes can measure temperature, magnetic fields, tunneling currents, voltage, force, and ion currents, among others.


Author(s):  
Jean-Paul Revel

In the last 50+ years the electron microscope and allied instruments have led the way as means to acquire spatially resolved information about very small objects. For the material scientist and the biologist both, imaging using the information derived from the interaction of electrons with the objects of their concern, has had limitations. Material scientists have been handicapped by the fact that their samples are often too thick for penetration without using million volt instruments. Biologists have been handicapped both by the problem of contrast since most biological objects are composed of elements of low Z, and also by the requirement that sample be placed in high vacuum. Cells consist of 90% water, so elaborate precautions have to be taken to remove the water without losing the structure altogether. We are now poised to make another leap forwards because of the development of scanned probe microscopies, particularly the Atomic Force Microscope (AFM). The scanning probe instruments permit resolutions that electron microscopists still work very hard to achieve, if they have reached it yet. Probably the most interesting feature of the AFM technology, for the biologist in any case, is that it has opened the dream of high resolution in an aqueous environment. There are few restrictions on where the instrument can be used. AFMs can be made to work in high vacuum, allowing the material scientist to avoid contamination. The biologist can be made happy as well. The tips used for detection are made of silicon nitride,(Si3N4), and are essentially unaffected by exposure to physiological saline (about which more below). So here is an instrument which can look at living whole cells and at atoms as well.


Author(s):  
Hung-Sung Lin ◽  
Mong-Sheng Wu

Abstract The use of a scanning probe microscope (SPM), such as a conductive atomic force microscope (C-AFM) has been widely reported as a method of failure analysis in nanometer scale science and technology [1-6]. A beam bounce technique is usually used to enable the probe head to measure extremely small movements of the cantilever as it is moved across the surface of the sample. However, the laser beam used for a beam bounce also gives rise to the photoelectric effect while we are measuring the electrical characteristics of a device, such as a pn junction. In this paper, the photocurrent for a device caused by photon illumination was quantitatively evaluated. In addition, this paper also presents an example of an application of the C-AFM as a tool for the failure analysis of trap defects by taking advantage of the photoelectric effect.


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