Physics of Nanotransistors: a Gate Voltage and Surface Potential, Mobile Electron Charge in Massive Structure of the Metal-Oxide Semiconductor and in Extremely Thin Silicon on Insulator

Silicon On Insulator ◽

Oxide Semiconductor ◽

Electron Charge ◽

Massive Structure ◽

Mobile Electron ◽

Transconductance oscillations in metal–oxide–semiconductor field-effect transistors with thin silicon-on-insulator originated by quantized energy levels

Applied Physics Letters ◽

10.1063/1.124724 ◽

1999 ◽

Vol 75 (10) ◽

pp. 1458-1460 ◽

Cited By ~ 5

Author(s):

Tetsuyasu Takahashi ◽

Mitiko Miura-Mattausch ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Energy Levels ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3360224 ◽

2010 ◽

Vol 96 (11) ◽

pp. 112102 ◽

Cited By ~ 7

Author(s):

J. Noborisaka ◽

K. Nishiguchi ◽

H. Kageshima ◽

Y. Ono ◽

A. Fujiwara

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Tunneling Spectroscopy ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Observation of gate bias dependent interface coupling in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2767844 ◽

2007 ◽

Vol 102 (3) ◽

pp. 034509 ◽

Cited By ~ 2

Author(s):

YoungChai Jung ◽

KeunHwi Cho ◽

SungWoo Hwang ◽

David Ahn ◽

YunSeop Yu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Gate Bias ◽

Interface Coupling ◽

Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress

Chinese Physics Letters ◽

10.1088/0256-307x/31/12/126101 ◽

2014 ◽

Vol 31 (12) ◽

pp. 126101 ◽

Cited By ~ 2

Author(s):

Qi-Wen Zheng ◽

Jiang-Wei Cui ◽

Xue-Feng Yu ◽

Qi Guo ◽

Hang Zhou ◽

...

Keyword(s):

Metal Oxide ◽

Gate Voltage ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Total Ionizing Dose ◽

Back Gate ◽

Voltage Stress

Enhanced electroluminescence in silicon-on-insulator metal–oxide–semiconductor transistors with thin silicon layer

Applied Physics Letters ◽

10.1063/1.1587877 ◽

2003 ◽

Vol 82 (26) ◽

pp. 4830-4832 ◽

Cited By ~ 16

Author(s):

Avi Karsenty ◽

Amir Sa’ar ◽

Nissim Ben-Yosef ◽

Joseph Shappir

Keyword(s):

Metal Oxide ◽

Silicon Layer ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Cost Effective ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00181-4 ◽

2020 ◽

Vol 21 (3) ◽

pp. 339-347 ◽

Cited By ~ 3

Author(s):

N. P. Maity ◽

Reshmi Maity ◽

Subir Dutta ◽

Subhasish Deb ◽

K. Girija Sravani ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Oxide Semiconductor ◽

Short Channel ◽

Effect Transistor

Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1378329 ◽

2001 ◽

Vol 90 (2) ◽

pp. 866-870 ◽

Cited By ~ 6

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Inversion Layer ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Self Consistent ◽

Doped Silicon

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Metal–oxide–semiconductor-compatible silicon based single electron transistor using bonded and etched back silicon on insulator material

10.1116/1.589739 ◽

1997 ◽

Vol 15 (6) ◽

pp. 2836 ◽

Cited By ~ 5

Author(s):

T. Köster

Keyword(s):

Metal Oxide ◽

Silicon On Insulator ◽

Single Electron ◽

Oxide Semiconductor ◽

Single Electron Transistor ◽

Silicon Based

A highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-on-insulator substrate

Journal of Applied Physics ◽

10.1063/1.4893582 ◽

2014 ◽

Vol 116 (7) ◽

pp. 074513 ◽

Cited By ~ 12

Author(s):

V. Mikhelashvili ◽

D. Cristea ◽

B. Meyler ◽

S. Yofis ◽

Y. Shneider ◽

...

Keyword(s):

Metal Oxide ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Highly Sensitive ◽

Insulator Substrate