scholarly journals Spectroscopic Studies of RF Discharge Plasma at Plasma-Chemical Etching of Gallium Nitride Epitaxial Structures

2017 ◽  
Vol 62 (3) ◽  
pp. 208-213
Author(s):  
V.V. Hladkovskiy ◽  
◽  
O.A. Fedorovich ◽  
Keyword(s):  
Gallium Nitride ◽  
Chemical Etching ◽  
Discharge Plasma ◽  
Spectroscopic Studies ◽  
Rf Discharge ◽  
Plasma Chemical ◽  
Plasma Chemical Etching

scholarly journals Application of plasma chemical treatment for manufacturing of instrument microstructures based on gallium nitride

2021 ◽  
Vol 2052 (1) ◽  
pp. 012057
Author(s):  
A V Zhelannov ◽  
B I Seleznev
Keyword(s):  
Gallium Nitride ◽  
Inductively Coupled Plasma ◽  
Chemical Etching ◽  
Smooth Surface ◽  
Plasma Source ◽  
Epitaxial Layers ◽  
Plasma Chemical ◽  
Inductively Coupled ◽  
Plasma Chemical Etching ◽  
Vertical Contact

Abstract The epitaxial layers of n-n+-GaN were processed by plasma-chemical etching using a Sentech SI 500 unit equipped with an inductively coupled plasma source. The regimes of gallium nitride processing in chlorine plasma have been established, which make it possible to remove epitaxial layers of the semiconductor down to a depth of 10 μm with a smooth surface. Based on the obtained processing results, prototype samples of Schottky diode microstructures with quasi-vertical contact geometry were manufactured. The effect of pretreatment on the characteristics of instrument microstructures is demonstrated.

scholarly journals Experimental studies of plasma-chemical etching of glass when manufacturing diffraction and hologram optical elements

2012 ◽  
Vol 12 (5) ◽  
Author(s):  
Sergey Odinokov ◽  
Gaik Sagatelyan ◽  
Anton Goncharov ◽  
Mikhail Kovalev ◽  
Artem Solomashenko ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Experimental Studies ◽  
Plasma Chemical ◽  
Optical Elements ◽  
Plasma Chemical Etching

FREQUENCY TRIMMING OF THE STW RESONATORS WITH WORKING FREQUENCY UP TO 1 GHZ

2021 ◽  
pp. 79-85
Author(s):  
A. N. Kuznetsov ◽  
S. A. Doberstein ◽  
I. V. Veremeev
Keyword(s):  
Quality Factor ◽  
Chemical Etching ◽  
Single Port ◽  
Frequency Range ◽  
Plasma Chemical ◽  
Etching Method ◽  
Plasma Chemical Etching ◽  
Working Frequency ◽  
Frequency Trimming

This paper presents the data for frequency trimming of the single port STW resona-tors in a frequency range of 500–1000 MHz by plasma chemical etching method. The main parameters of resonators after frequency trimming are given: frequency tolerance <±100·10–6, quality factor of 8600–9500, equivalent elements needed for use of the STW resonators.

Calculating the Nominal Values of the Matching Device Installation of Plasma Chemical Etching

2019 ◽  
Vol 822 ◽  
pp. 594-600
Author(s):  
E.V. Endiiarova ◽  
Singh Ruby
Keyword(s):  
Chemical Etching ◽  
Optimal Performance ◽  
Plasma Chemical ◽  
Plasma Chemical Etching

. The calculation of nominal values of the matching device for the modified plasma chemical etching installation "Plasma 600T" was based on the estimated values of the discharge impedance (plasma). It turned out that for optimal performance, one can use a matching device consisting of two capacitors whose capacitances are: С1 [20; 1000] pF, С2 [4; 100] pF, and inductor with inductance 2,5 μH.

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