Optical Properties of Multilayers TiO2/SnO2:F Thin films

MRS Advances ◽  
2016 ◽  
Vol 1 (46) ◽  
pp. 3133-3138 ◽  
Author(s):  
Eleicer Ching-Prado ◽  
Amanda Watson ◽  
Héctor Miranda ◽  
Ildeman Abrego
Keyword(s):  
Thin Films ◽  
Dielectric Function ◽  
Spray Pyrolysis Technique ◽  
Wavelength Region ◽  
Ammonium Fluoride ◽  
Optical Transmittance ◽  
Optical Parameters ◽  
High Frequency Dielectric Constant ◽  
Visible Transmittance ◽  
Uv Visible

AbstractThin films of TiO2/SnO2:F multilayers were prepared by spray pyrolysis technique on glass substrate. The samples were prepared using titanium (IV) isopropoxide 98%, ammonium fluoride and tin(II) chloride dehydrate extra pure as precursor materials. Thus, a TiO2 thickness dependence optical study of TiO2/SnO2:F/glass system is presented. The optical property was characterized by UV-Visible transmittance spectroscopy. For all the samples, the average transmissions in the visible wavelength region (400-800 nm) were between 69 and 84%. The optical parameters, such as the real part dielectric function ε1 and the imaginary part dielectric function ε2, of TiO2 and SnO2:F in the TiO2/SnO2:F thin films structure, determined by fitting the measured optical transmittance spectra, are presented and analyzed. Among the various classical dispersion relations for the dielectric function, the Drude model combined with the Lorentzian oscillators was used to get a good fit of transmittance in the measured spectral range. Results on related parameters such as high frequency dielectric constant, plasma frequency, film thickness and band gap are presented.

scholarly journals Annealing Effects on the Some Optical Properties of Fe2O3 Thin Films Doped by NiO

2016 ◽  
Vol 8 ◽  
pp. 44-50 ◽  
Author(s):  
Nadir Fadhil Habubi ◽  
Sami Salman Chiad ◽  
Khalid Haneen Abass ◽  
Mahmood Muwafaq Abood
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Nickel Oxide ◽  
Spray Pyrolysis ◽  
Glass Substrate ◽  
Annealing Temperature ◽  
Energy Gap ◽  
Spray Pyrolysis Technique ◽  
Annealing Effects ◽  
Uv Visible

Nickel oxide doped Fe2O3thin films have been prepared by spray pyrolysis technique on glass substrate. The initial solution was including a 0.1 M/L for both NiCl2and FeCl3diluted with redistilled water and a few drops of HCl. The effect of annealing temperature on optical properties was studied, using UV-Visible spectrophotometer to determine absorption spectra at a thickness of 400 nm. The reflectance increased with increasing annealing temperature, such as α, k, and n.While the transmittance decreases with increasing annealing temperature and the energy gap decreased from 2.68 eV before annealing to 2.70 eV after 500°C annealing temperature.

scholarly journals Nanostructured device based on coated ZnO layer as a window in solar cell applications

2018 ◽  
Vol 36 (4) ◽  
pp. 570-583
Author(s):  
H. Mokhtari ◽  
M. Benhaliliba ◽  
A. Boukhachem ◽  
M.S. Aida ◽  
Y.S. Ocak
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Electrical Properties ◽  
Spray Pyrolysis Technique ◽  
Optical Measurements ◽  
Visible Range ◽  
Optical Parameters ◽  
Dispersion Energy ◽  
Doping Element ◽  
Single Oscillator

AbstractThis work highlights some physical properties related to the influence of aluminum, tin and copper incorporation on nanostructured zinc oxide (ZnO:M; M:Al, Sn and Cu) thin films prepared by ultrasonic spray pyrolysis technique (USP) on glass substrate at 350±5 °C. For the as-grown layers, M- to Zn-ratio was fixed at 1.5 %. The effects of metal doping on structural, morphological, optical and electrical properties were investigated. X-ray diffraction pattern revealed that the as-prepared thin films crystallized in hexagonal structure with (0 0 2) preferred orientation. The surface topography of the films was performed by atomic force microscopy. AFM images revealed inhibition of grain growth due to the doping elements incorporation into ZnO matrix, which induced the formation of ZnO nanoparticles. Optical measurements showed a high transparency around 90 % in visible range. Some optical parameters, such as optical band gap, Urbach energy, refractive index, extinction coeffi-cient and dielectric constant were studied in terms of doping element. Particularly, dispersion of refractive index was discussed in terms of both Cauchy and single oscillator model proposed by Wemple and DiDomenico. Cauchy parameters and single oscillator energy E0 as well as dispersion energy Ed were calculated. Finally, electrical properties were investigated by means of electrical conductivity and Hall effect measurements. The measurements confirmed n type conductivity of the prepared thin films and a good agreement between the resistivity values and the oxidation number of doping element. The main aim of this work was the selection of the best candidate for doping ZnO for optoelectronics applications. The comparative study of M doped ZnO (M:Al, Sn and Cu) was performed. High rectifying efficiency of the Al/n-ZnO/p-Si/Al device was achieved and non-ideal behavior was revealed with n > 4.

STRUCTURAL, OPTICAL, AND ELECTRICAL CHARACTERIZATION OF SPRAY PYROLYSED INDIUM SULFIDE THIN FILMS

2013 ◽  
Vol 20 (02) ◽  
pp. 1350014 ◽  
Author(s):  
F. RAHMAN ◽  
J. PODDER ◽  
M. ICHIMURA
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis Technique ◽  
Low Cost ◽  
Electrical Characterization ◽  
Optical Transmittance ◽  
Band Gap Energy ◽  
Indium Sulfide ◽  
X Ray Diffraction ◽  
Indium Chloride ◽  
Glass Substrates

Indium sulfide (In2S3) thin films were deposited onto the glass substrates by a low cost simple spray pyrolysis technique at 300°C temperature. Aqueous solution of indium chloride and thiourea were used to deposit the binary In-S film. The deposited thin films were annealed at 400° and 500°C temperatures and characterized structurally, optically and electrically using EDX, X-ray diffraction, UV-visible spectroscopy and four probe van der Pauw methods. The optical constants such as refractive index and extinction coefficient are calculated from absorbance and transmittance data from 300 to 1100 nm wavelength. The optical transmittance increased after annealing at 400° and 500°C. The band gap energy was reduced from 2.90 to 2.50 eV after annealing the as deposited films. The electrical conductivity as well as the activation energy was increased after annealing the samples.

Effect of Substrate Temperature on the Haze and Properties of SnO2: F Thin Film Coated on Glass (FTO) by Spray Pyrolysis Process

2010 ◽  
Vol 150-151 ◽  
pp. 1043-1048 ◽  
Author(s):  
Qing Nan Zhao ◽  
Shuo Wu ◽  
Deng Kui Miao
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Ammonium Fluoride ◽  
Optical Transmittance ◽  
Transparent Electrode ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Spray Pyrolysis Process

The textured thin films of fluorine-doped tin oxide (FTO) were prepared onto preheated glass substrates by a spray pyrolysis technique, using dehydrate stannous chloride (SnCl2:2H2O) and ammonium fluoride (NH4F) mixed with alcohol, as precursor. The haze and properties of the films heat treated at different temperatures from 400 to 550 were characterized by X-ray diffraction (XRD), 3D Digitale Mikroskop, Atomic Force Microscopy, UV-Vis spectrometer, sphere photometer and four-probe instrument. The results show that, with the increase of the substrate temperature, XRD peaks become sharper, the grain sizes grow up rapidly, and the crystal structure is improved gradually; the surface topography become like the islands and the haze achieves 16.47%. The lowest sheet resistance of the films is 9.7Ω/□. The effect of the substrate temperature on the haze, electric property and optical transmittance of the FTO films has been discussed in detail. The results show textured SnO2:F thin film deposited onto preheated glass substrates by a spray pyrolysis technique would be used as transparent electrode in amorphous silicon(a-Si) solar cells due to its excellent properties.

Effects of Substrate Temperature on Structure and Properties of Al-F Co-doped ZnO Thin Films

2012 ◽  
Vol 602-604 ◽  
pp. 1404-1408
Author(s):  
Rui Xin Ma ◽  
Shi Na Li ◽  
Guo Quan Suo
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Optical And Electrical Properties ◽  
Structure And Properties ◽  
Glass Substrates ◽  
Visible Transmittance ◽  
Uv Visible ◽  
Influence Of Substrate ◽  
Co Doped

ZnO:(Al, F) thin films on glass substrates have been prepared by RF magnetron sputtering. The influence of substrate temperature on the microstructure,optical and electrical properties of ZnO(Al,F) films have been studied. The effects of substrate temperature on structure and optical and electronical properties of ZnO:Al:F thin films were investigated by XRD,SEM,UV-Visible spectrophotometry and four-point proble method.Experimental results indicate that substrate temperature affects the structure and properties of the thin films considerably.The lowest resistivity obtained in this study was 9.95×10-3 Ω∙cm for the film with average visible transmittance of 90% which was deposited at the substrate temperature of 300°C.

ANNEALING EFFECT ON STRUCTURAL AND OPTICAL PROPERTIES OF COPPER-DOPED BISMUTH TRIOXIDE Cu:Bi2O3 THIN FILMS

2019 ◽  
Vol 27 (07) ◽  
pp. 1950174
Author(s):  
FATIMA ZOHRA BOUCHAREB ◽  
NASR-EDDINE HAMDADOU
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Spray Pyrolysis Technique ◽  
Optical Transmittance ◽  
Bandgap Energy ◽  
Indirect Transition ◽  
Medium Temperature ◽  
Glass Substrates ◽  
Average Grain Size ◽  
Optimum Annealing Temperature

In this work, we have examined the effect of annealing temperature on Cu-doped Bi2O3 thin films at 1%, 3% and 5% doping rate successfully prepared by spray pyrolysis technique onto glass substrates. The obtained films were subsequently annealed at different temperature for 4[Formula: see text]h. GIXRD analysis reveals the polycrystalline nature of deposited films and shows the formation of mixed [Formula: see text]- and [Formula: see text]-Bi2O3 phases. With the increase of doping rate, [Formula: see text]-phase of Bi2O3 was identified at medium temperature. The average grain size of thin films at different doping rate of Cu decreases with the increase of annealing temperature. The optical characterization shows that the optical transmittance of the films decreases with the increase of annealing temperature in the range (70–50%) and (40–10%) for 1% and 5% doping rate of Cu, respectively. The evaluation of the optical bandgap energy reveals that the indirect transition is controlling the optical response of the films. The optimum annealing temperature to reduce Bi2O3 energy bandgap to be 3.09[Formula: see text]eV, is 450∘C and 550∘C for 3% and 5% doping rate of Cu.

scholarly journals Fe2O3 Thin Films Prepared by Spray Pyrolysis Technique and Study the Annealing on its Optical Properties

2015 ◽  
Vol 45 ◽  
pp. 24-31 ◽  
Author(s):  
Khalid Haneen Abass
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Annealing Temperature ◽  
Spray Pyrolysis Technique ◽  
Chemical Spray Pyrolysis ◽  
Glass Substrates ◽  
Chemical Spray ◽  
Coefficient Increase ◽  
Uv Visible

Fe2O3 thin films that doped by NiO were obtained on glass substrates by the chemical spray pyrolysis technique, and annealed at 450 °C and 500 °C. The effect of annealing on optical properties was studied by recording the absorbance spectra using UV-Visible spectrophotometer. The refractive index decreases with increasing annealing temperature, such as an optical band gap that decreases from 2.68 eV before annealing to 2.58 eV after annealing of 500 °C. Absorption coefficient and extinction coefficient increase with increasing annealing temperature.

A next generation TCO Material for display systems: Molybdenum doped Indium oxide thin films

2006 ◽  
Vol 936 ◽  
Author(s):  
E. Elangovan ◽  
A Marques ◽  
R Martins ◽  
E Fortunato
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Time ◽  
Optical Band Gap ◽  
Optical Transmittance ◽  
Glass Substrates ◽  
Visible Transmittance ◽  
Sputtering Power ◽  
Spectra Properties ◽  
Display Systems

ABSTRACTThin films of indium molybdenum oxide (IMO) were rf sputtered onto glass substrates at room temperature. The films were studied as a function of sputtering power (ranging 40 – 180 W) and sputtering time (ranging 2.5 – 20 min). Thickness of the films found varied between 50 – 400 nm. The films were characterized for their structural (XRD), electrical (Hall measurements) and optical (Transmittance spectra) properties. XRD studies revealed that the films are amorphous for the sputtering power ≤ 100 W and deposition time ≤ 5 min. All the other films are polycrystalline and the strongest refection along (222) plane showing a preferential orientation. A minimum bulk resistivity of 2.65 × 10−3 Ω-cm and a maximum carrier concentration of 4.16 × 1020 cm−3 have been obtained for the films sputtered at 180 W (10 min). Whereas maximum mobility (19.5 cm2 V−1 s−1) has been obtained for the films sputtered at 80 W (10 min). A maximum visible transmittance of 90 % (500 nm) has been obtained for the films sputtered at 80 W (10 min) with a minimum of 27 % for those sputtered at 180 W. The optical band gap of the films found varying between 3.75 and 3.90 eV for various sputtering parameters.

Effect of Mn Doping on Optical Properties of Nanostructured ZnO Thin Film

2012 ◽  
Vol 462 ◽  
pp. 201-205 ◽  
Author(s):  
M. Ebrahimizadeh Abrishami ◽  
A. Kompany
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Spray Pyrolysis Technique ◽  
Unconstrained Minimization ◽  
Optical Transmittance ◽  
Wurtzite Structure ◽  
Dispersion Parameters ◽  
Dispersion Energy ◽  
Mn Content

Undoped and ZnO: Mn thin films with different Mn content ( 5, 10 and 15 mol%) were grown on glass substrates by spray pyrolysis technique. X-ray diffraction analysis showed that single phase wurtzite structure is formed in all samples. XRD results also indicated that the undoped ZnO were crystallized in c-axis oriented wurtzite structure, while the ZnO: Mn thin films were polycrystalline. The SEM results revealed that Mn presence were modified the surface morphology of the samples. The optical transmittance measurements were performed in the wavelength range from 190 to 1100 nm. The refractive index, extinction coefficient and film thickness were determined by using pointwise unconstrained minimization model. It was observed that the refractive index increased with the increase in Mn concentration. Also, the thin films exhibited the direct band gap increased from 3.20 to 3.28 eV with the increase in Mn content. The optical dispersion parameters have been calculated and analyzed by using Wemple-Di Domenico relation. The obtained values showed that dispersion energy Ed of doped samples was found to be decreasing comparing to undoped thin film.

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