A next generation TCO Material for display systems: Molybdenum doped Indium oxide thin films

2006 ◽  
Vol 936 ◽  
Author(s):  
E. Elangovan ◽  
A Marques ◽  
R Martins ◽  
E Fortunato
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Time ◽  
Optical Band Gap ◽  
Optical Transmittance ◽  
Glass Substrates ◽  
Visible Transmittance ◽  
Sputtering Power ◽  
Spectra Properties ◽  
Display Systems

ABSTRACTThin films of indium molybdenum oxide (IMO) were rf sputtered onto glass substrates at room temperature. The films were studied as a function of sputtering power (ranging 40 – 180 W) and sputtering time (ranging 2.5 – 20 min). Thickness of the films found varied between 50 – 400 nm. The films were characterized for their structural (XRD), electrical (Hall measurements) and optical (Transmittance spectra) properties. XRD studies revealed that the films are amorphous for the sputtering power ≤ 100 W and deposition time ≤ 5 min. All the other films are polycrystalline and the strongest refection along (222) plane showing a preferential orientation. A minimum bulk resistivity of 2.65 × 10−3 Ω-cm and a maximum carrier concentration of 4.16 × 1020 cm−3 have been obtained for the films sputtered at 180 W (10 min). Whereas maximum mobility (19.5 cm2 V−1 s−1) has been obtained for the films sputtered at 80 W (10 min). A maximum visible transmittance of 90 % (500 nm) has been obtained for the films sputtered at 80 W (10 min) with a minimum of 27 % for those sputtered at 180 W. The optical band gap of the films found varying between 3.75 and 3.90 eV for various sputtering parameters.

scholarly journals Effect of Different Deposition Power of In2O3Target on the Characteristics of IGZO Thin Films Using the Cosputtering Method

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Shang-Chao Hung ◽  
Kin-Tak Lam ◽  
Cheng-Fu Yang ◽  
Yu-Jhen Liou
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Time ◽  
Optical Band Gap ◽  
Transparent Electrode ◽  
Amorphous Structure ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Deposition Power ◽  
Sputtering System

The (In, Ga, Zn)Ox(IGZO) thin films were deposited on glass substrates using cosputtering method in radio frequency magnetron sputtering system. Zn2Ga2O5(Ga2O3-2 ZnO, GZO) and In2O3ceramics were used as targets and dual guns were used to deposit the IGZO thin films. Deposition power of GZO target was 80 W and deposition power of pure In2O3target was changed from 70 W to 100 W, and the deposition time was 30 min. The effect of deposition power of In2O3target on the crystalline, surface, electrical, and optical properties of the IGZO thin films was investigated at room temperature in a pure Ar atmosphere. The cosputtered IGZO thin films showed a very smooth and featureless surface and an amorphous structure regardless of the deposition power of In2O3target due to the room temperature sputtering process. However, the cosputtered IGZO thin films exhibited transparent electrode properties because they had high transmittance ratio and low resistivity. The value variations in the optical band gap(Eg)values of the IGZO thin film were evaluated from the plots of(αhν)2=c(hν-Eg). We would also show that the deposition power of In2O3target would have a large effect on mobility andEgvalue of the IGZO thin films.

Structure and Optical Property of Cu2O:N Thin Film Deposited by Reactive Pulse Magnetron Sputtering

2014 ◽  
Vol 951 ◽  
pp. 104-108
Author(s):  
Xing Fa Zi ◽  
Rui Ming Liu ◽  
Qing Ye ◽  
Xin Zhu Shu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rate Ratio ◽  
Room Temperature ◽  
Single Phase ◽  
Optical Band Gap ◽  
Flow Rate Ratio ◽  
Pulse Magnetron ◽  
Sputtering Power ◽  
Reactive Pulse

N-doped Cu2O (Cu2O:N) thin films were deposited on glass substrate by reactive pulse magnetron sputtering method using Cu target. Crystalline phases of thin films were controlled by adjusting N2/ O2flow rate ratio and sputtering power precisely during the sputtering process, and the single phase of Cu2O(111) thin films were obtained at room temperature. The thin films deposited at different sputtering powers were characteristics of 2D growth and the root mean square (RMS) of surface roughness of thin films gradually increased with the increasing of sputtering power. The optical band gap (Eg) of thin films were in the range 2.18-2.35 eV, and slightly decreased with increasing of sputtering power from 45 W to 90 W.

The Growth of Transparent Conductive Al-Doped ZnO Thin Films at Room Temperature

2007 ◽  
Vol 124-126 ◽  
pp. 211-214
Author(s):  
Sang Moo Park ◽  
Takashi Tomemori ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara
Keyword(s):  
Thin Films ◽  
Oxygen Pressure ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Electrical And Optical Properties ◽  
Flexible Display ◽  
Glass Substrates ◽  
Visible Transmittance ◽  
Flexible Solar Cell ◽  
Doped Zno

High-quality transparent conductive Al-doped ZnO (AZO) thin films were deposited by pulsed laser deposition on quartz glass substrates at room temperature. We varied the growth condition in terms of oxygen pressure. The structure and electrical and optical properties of the as-grown AZO films were mainly investigated. The AZO films formed at room temperature showed a low electrical resistivity of 3.01×10-4 ) cm, a carrier concentration of 1.12×1021 cm-3 and a carrier mobility of 18.59 cm2/Vs at an oxygen pressure of 10 mTorr. A visible transmittance of above 83% was obtained. The present results suggest that optimized AZO films should be very useful and effective for flexible display, top emission type of OLEDs and for various other kinds of optoelectronic devices such as flexible solar cell or passive photo device.

The Effect of Sputtering Power on the Properties of One-step Deposited Cu2ZnSnSe4 Thin Films

2014 ◽  
Vol 1603 ◽  
Author(s):  
Yong Yan ◽  
Shasha Li ◽  
Zhou Yu ◽  
Yong Zhang ◽  
Yong Zhao
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Room Temperature ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Radio Frequency Magnetron Sputtering ◽  
Glass Substrates ◽  
Sputtering Power ◽  
One Step ◽  
Deposited Films

ABSTRACTCu2ZnSnSe4 films were deposited on soda lime glass substrates at room temperature by one-step radio frequency magnetron-sputtering process. The effect of sputtering power on the properties of one-step deposited Cu2ZnSnSe4 thin films has been investigated. The deposited films might be suitable for the absorber layers in the solar cells. The chemical composition and the preferred orientation of the films can be optimized by the sputtering power.

scholarly journals Effects of Deposition Time on the Morphology, Structure, and Optical Properties of PbS Thin Films Prepared by Chemical Bath Deposition

2018 ◽  
Vol 2018 ◽  
pp. 1-8 ◽  
Author(s):  
B. Abdallah ◽  
A. Ismail ◽  
H. Kashoua ◽  
W. Zetoun
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Photoelectron Spectroscopy ◽  
Deposition Time ◽  
Optical Band Gap ◽  
Optical Transmittance ◽  
Xrd Analysis ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

Lead sulfide thin films were prepared by chemical bath deposition (CBD) on both glass and Si (100) substrates. XRD analysis of the PbS film deposited at 25°C showed that the prepared films have a polycrystalline structure with (200) preferential orientation. Larger grains could be obtained by increasing the deposition time. The prepared films were also chemically characterized using X-ray photoelectron spectroscopy (XPS), which confirmed the presence of lead and sulfur as PbS. While energy dispersive X-ray spectroscopy (EDX) technique was used to verify the stoichiometry of the prepared films. Atomic force microscopy (AFM) was used to study the change in the films’ morphology with the deposition time. The effect of the deposition time, on both optical transmittance in the UV-Vis-NIR region and the structure of the film, was studied. The obtained results demonstrated that the optical band gap decreased when the thickness increased.

Some studies on Molybdenum doped Indium oxide thin films rf sputtered at room temperature

2006 ◽  
Vol 928 ◽  
Author(s):  
E. Elangovan ◽  
P Barquinha ◽  
A Pimental ◽  
A. S. Viana ◽  
R Martins ◽  
...  
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Indium Oxide ◽  
Room Temperature ◽  
Optical Band Gap ◽  
X Ray Diffraction ◽  
Volume Percentage ◽  
Transmittance Spectra ◽  
X Ray ◽  
Glass Substrates

ABSTRACTThin films of molybdenum doped indium oxide (IMO) were rf sputtered onto glass substrates at room temperature. The films were studied as a function of oxygen volume percentage (OVP) ranging 1.4 - 10.0 % in the sputtering chamber. The thickness of the films found varying between 180 and 260 nm. The X-ray diffraction pattern showed the films are polycrystalline with the peaks corresponding to (222) and (400) planes and one among them showing as a preferential orientation. It is observed that the preferred orientation changes from (222) plane to (400) as the OVP increases from 1.4 to 10.0 %. The transmittance spectra were found to be in the range of 77 to 89 %. The optical band gap calculated from the absorption coefficient of transmittance spectra was around 3.9 eV. The negative sign of Hall coefficient confirmed the films were n-type conducting. The bulk resistivity increased from 2.26 × 10−3 to 4.08 × 10−1 Ω−cm for the increase in OVP from 1.4 to 4.1 %, and thereafter increased dramatically so as the Hall coefficients were not detectable. From the AFM morphologies it is evaluated that the RMS roughness of the films ranges from 0.9 to 3.2 nm.

Effect of RF Power on the Structural Properties of Magnetron Sputtered ZnO Thin Films Deposited at Room Temperature

2012 ◽  
Vol 626 ◽  
pp. 163-167
Author(s):  
Samsiah Ahmad ◽  
Nor Diyana Md Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Room Temperature ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Rf Power ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Sputtering Power

Zinc oxide thin films were prepared at room temperature in pure argon ambient on glass substrates by RF magnetron sputtering. The effect of sputtering power (50~250 Watt) on the structural properties of the film were investigated. The thickness of ZnO thin films was measured using surface profiler (Dektak 150+). Atomic force microscopy machine (AFM-Park system XE-100) was used to characterize the morphology while the crystalinity have been characterized using XRD (Rigaku Ultima IV). It was found that the thickness, growth rate and RMS roughness increases with increasing RF power. All films exhibit the (002) plane which correspond to hexagonal wurtzite structure with the highest peak at 150 Watt.

ON THE STRUCTURE, ELECTRICAL AND OPTICAL PROPERTIES OF TiO2 SPUTTERED THIN FILMS

2006 ◽  
Vol 13 (01) ◽  
pp. 87-92 ◽  
Author(s):  
A. ASHOUR
Keyword(s):  
Thin Films ◽  
Optical Constants ◽  
Optical Band Gap ◽  
Optical Transmittance ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Lattice Constants ◽  
Glass Substrates ◽  
Deposited Films

Titanium oxide thin films were prepared by sputtering technique onto glass substrates at room temperature (RT). The structure of the films was confirmed using X-ray diffraction (XRD) and revealed the stoichiometry with an O and Ti ratio of 2. The deposited films at RT were found to be amorphous and the films annealed at 300 and 400°C for 2 h were crystalline with orthorhombic structure. The lattice constants and grain size of the film are calculated. The electrical resistivity was found to depend on the film thickness and decreased with increasing the film thicknesses. The optical constants of the films such as the refractive index, extinction coefficient, and absorption coefficient were also determined using the optical transmittance measurements, and the results were discussed. The optical band gap varies from 3.2 to 3.5 eV as a function of oxygen/argon ratios.

Sol-gel growth of Ni doped CdS on glass substrates: effect of spin coating speed and dopant concentration

2020 ◽  
Vol 10 ◽  
Author(s):  
Atefeh Nazari Setayesh ◽  
Hassan Sedghi
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spin Coating ◽  
Optical Band Gap ◽  
Dopant Concentration ◽  
Rotation Speed ◽  
Sol Gel ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Glass Substrates

Background: In this work, CdS thin films were synthesized by sol-gel method (spin coating technique) on glass substrates to investigate the optical behavior of the film. Methods: Different substrate spin coating speeds of 2400, 3000, 3600 rpm and different Ni dopant concentrations of 0 wt.%, 2.5 wt.%, 5 wt.%) were investigated. The optical properties of thin films such as refraction index, extinction coefficient, dielectric constant and optical band gap energy of the layers were discussed using spectroscopic ellipsometry method in the wavelength range of 300 to 900 nm. Results: It can be deduced that substrate rotation speed and dopant concentration has influenced the optical properties of thin films. By decreasing rotation speed of the substrate which results in films with more thicknesses, more optical interferences were appeared in the results. Conclusion: The samples doped with Ni comparing to pure ones have had more optical band gap energy.

Deposition time dependent study of structural and optical properties of PbS thin films grown by CBD method

2020 ◽  
Vol 13 ◽  
Author(s):  
Minakshi Chaudhary ◽  
Yogesh Hase ◽  
Ashwini Punde ◽  
Pratibha Shinde ◽  
Ashish Waghmare ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Deposition Time ◽  
Secondary Growth ◽  
Cost Effective ◽  
Xrd Analysis ◽  
Structural Morphology ◽  
Glass Substrates ◽  
Cbd Method

: Thin films of PbS were prepared onto glass substrates by using a simple and cost effective CBD method. Influence of deposition time on structural, morphology and optical properties have been investigated systematically. The XRD analysis revealed that PbS films are polycrystalline with preferred orientation in (200) direction. Enhancement in crystallinity and PbS crystallite size has been observed with increase in deposition time. Formation of single phase PbS thin films has been further confirmed by Raman spectroscopy. The surface morphology analysis revealed the formation of prismatic and pebble-like PbS particles and with increase in deposition time these PbS particles are separated from each other without secondary growth. The data obtained from the EDX spectra shows the formation of high-quality but slightly sulfur rich PbS thin films over the entire range of deposition time studied. All films show increase in absorption with increase in deposition time and a strong absorption in the visible and sub-band gap regime of NIR range of the spectrum with red shift in band edge. The optical band gap shows decreasing trend, as deposition time increases but it is higher than the band gap of bulk PbS.

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