Understanding the Photoluminescence Mechanism of Carbon Dots

MRS Advances ◽  
2017 ◽  
Vol 2 (51) ◽  
pp. 2927-2934 ◽  
Author(s):  
Zhoufeng Jiang ◽  
Marta J. Krysmann ◽  
Antonios Kelarakis ◽  
Petr Koutnik ◽  
Pavel Anzenbacher ◽  
...  
Keyword(s):  
Carbon Dots ◽  
Quantum Yields ◽  
Excitation Wavelength ◽  
Time Resolved ◽  
Light Emitting ◽  
Dependent Component ◽  
Different Types ◽  
Photoluminescence Mechanism ◽  
Time Resolved Photoluminescence ◽  
Absolute Quantum

ABSTRACTThe carbon dots were investigated to reveal their light-emitting mechanism. The fluorescence spectra of carbon dots show typically two different types of photoluminescence: the excitation-independent component in the short wavelength, and the excitation-dependent component in the longer wavelength. The UV-Vis spectrum of carbon dots shows the absorption maximum of 340 nm which should be accredited to the n-π* transition of the carbonyl group in carbon dots. Absolute quantum yields of carbon dots dispersed in Polyvinyl alcohol is around 15% when the excitation wavelength is less than 425 nm, but decreases continuously when the excitation wavelength increases. The decay lifetimes of the carbon dots also show an abrupt change at excitation wavelength 425 nm. Time resolved photoluminescence was implemented from 31K to 291K to study the photoluminescence decay dynamics of carbon dots, resulting in the continuously decreasing of the lifetime as the temperature increases.

ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters

2005 ◽  
Vol 892 ◽  
Author(s):  
Andrei Osinsky ◽  
Jianwei Dong ◽  
J. Q. Xie ◽  
B. Hertog ◽  
A. M. Dabiran ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Compositional Analysis ◽  
Optical Emission ◽  
Rf Plasma ◽  
Light Emitters ◽  
Time Resolved ◽  
Light Emitting ◽  
Spatially Resolved ◽  
Time Resolved Photoluminescence ◽  
Made In

AbstractThis paper reviews of some of the progress made in the development of ZnO-based light emitting diodes (LEDs). n-ZnO/p-AlGaN-based heterostructures have been successfully for the fabrication of UV emitting LEDs that have operated at temperatures up to 650K, suggesting an excitonic origin for the optical transitions. RF-plasma-assisted molecular beam epitaxy has been used to grow epitaxial CdxZn1-xO films on GaN/sapphire structure. These films have a single-crystal wurtzite structure as demonstrated by structural and compositional analysis. High quality CdxZn1-xO films were grown with up to x=0.78 mole fraction as determined by RBS and SIMS techniques. Optical emission ranging from purple (Cd0.05Zn0.95O) to yellow (Cd0.29Zn0.71O) was observed. Compositional fluctuations in a Cd0.16Zn0.84O films were not detected by spatially resolved CL measurements, although intensity fluctuation with features of ∼0.5 μm diameter were seen on the intensity maps. Time resolved photoluminescence shows multi-exponential decay with 21 psec. and 49±3 psec. lifetimes, suggesting that composition micro-fluctuations may be present in Cd0.16Zn0.84O film.

scholarly journals Влияние условий роста и уровня легирования на кинетику люминесценции слоев Ge : Sb, выращенных на кремнии

2020 ◽  
Vol 54 (7) ◽  
pp. 685
Author(s):  
Д.В. Юрасов ◽  
Н.А. Байдакова ◽  
А.Н. Яблонский ◽  
А.В. Новиков
Keyword(s):  
Doping Level ◽  
Room Temperature ◽  
Carrier Lifetime ◽  
Growth Conditions ◽  
Published Data ◽  
Rapid Thermal Anneal ◽  
Time Resolved ◽  
Light Emitting ◽  
Pl Intensity ◽  
Time Resolved Photoluminescence

Light-emitting properties of Ge-on-Si(001) layers doped by Sb were studied by stationary and time-resolved photoluminescence (PL) at room temperature. It was obtained that the PL intensity of n-Ge/Si(001) structures is maximized when the doping level is close to the equilibrium solubility of Sb in Ge (~1019 cm-3) which is in accordance with the previously published data. Time-resolved studies of the direct-related PL signal have shown that both the donor density and the growth conditions of doped layer, in particular, the growth temperature influence the PL kinetics. It was obtained that the increase of doping level leads to the decrease of the characteristic carrier lifetime. Moreover, usage of low growth temperatures which is needed to form the doped n-Ge layers also results in shortening of the carrier lifetime as compared with Ge layers grown at high temperatures. It was found that rapid thermal anneal at proper conditions could partially compensate the above mentioned detrimental effects and lead to the increase of both the PL intensity and carrier lifetime.

scholarly journals Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence

2016 ◽  
Vol 55 (5S) ◽  
pp. 05FJ01 ◽  
Author(s):  
Felix Nippert ◽  
Sergey Karpov ◽  
Ines Pietzonka ◽  
Bastian Galler ◽  
Alexander Wilm ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Small Signal ◽  
Time Resolved ◽  
Light Emitting ◽  
Time Resolved Photoluminescence ◽  
Signal Time

scholarly journals Investigation of Energy Transfer in Star-Shaped White Polymer Light-Emitting Devices via the Time-Resolved Photoluminescence

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1719 ◽  
Author(s):  
Hui He ◽  
Xiaoqing Liao ◽  
Jiang Cheng ◽  
Ying Li ◽  
Junsheng Yu ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Current Efficiency ◽  
Intermolecular Interactions ◽  
Efficient Energy Transfer ◽  
Time Resolved ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Efficient Energy ◽  
Polymer Light Emitting Devices ◽  
Time Resolved Photoluminescence

A series of white polymer light-emitting devices (WPLEDs) were fabricated by utilizing star-shaped white-emission copolymers containing tri[1-phenylisoquinolinato-C2,N]iridium (Ir(piq)3), fluorenone (FO) and poly(9,9-dioctylfluorene) (PFO) as red-, green- and blue-emitting (RGB) components, respectively. In these WPLEDs, a maximum current efficiency of 6.4 cd·A−1 at 20 mA·cm−2 and Commission Internationale d’Eclairage (CIE) coordinates of (0.33, 0.32) were achieved, and the current efficiency was still kept to 4.2 cd·A−1 at the current density of 200 mA·cm−2. To investigate energy transfer processes among the three different chromophores of the star-shaped copolymers in these WPLEDs, the time-resolved photoluminescence (PL) spectra were recorded. By comparing the fluorescence decay lifetimes of PFO chromophores in the four star-like white-emitting copolymers, the efficient energy transfer from PFO units to Ir(piq)3 and FO chromophores was confirmed. From time-resolved PL and the analysis of energy transfer process, the results as follows were proved. Owing to the star-like molecular structure and steric hindrance effect, intermolecular interactions and concentrations quenching in the electroluminescence (EL) process could also be sufficiently suppressed. The efficient energy transfer also reduced intermolecular interactions’ contribution to the enhanced device performances compared to the linear single-polymer white-light systems. Moreover, saturated stable white emission results from the joint of energy transfer and trap-assisted recombination. This improved performance is expected to provide the star-like white-emitting copolymers with promising applications for WPLEDs.

Switching on Near-Infrared Light in Lanthanide-doped CsPbCl3 Perovskite Nanocrystals.pdf

2020 ◽  
Author(s):  
Min Zeng ◽  
Federico Locardi ◽  
Dimitrije Mara ◽  
Zeger Hens ◽  
Rik Van Deun ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Near Infrared ◽  
Lanthanide Ions ◽  
Infrared Light ◽  
Quantum Yields ◽  
General Strategy ◽  
Time Resolved ◽  
Nir Emission ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

The accessible emission spectral range of lead halide perovskite (LHP) CsPbX3 (X = Cl−, Br−, I−) nanocrystals (NCs) has remained so far limited to wavelengths below 1 μm, corresponding to the emission line of Yb3+, whereas the direct sensitization of other near-infrared (NIR) emitting lanthanide ions is unviable. Herein, we present a general strategy to enable intense NIR emission from Er3+ at ~1.5 μm, Ho3+ at ~1.0 μm and Nd3+ at ~1.06 μm through a Mn2+-mediated energy-transfer pathway. Steady-state and time-resolved photoluminescence studies show that energy-transfer efficiencies of about 39%, 35% and 70% from Mn2+ to Er3+, Ho3+ and Nd3+ are obtained, leading to photoluminescence quantum yields of ~0.8%, ~0.7% and ~3%, respectively. This work provides guidance on constructing energy-transfer pathways in semiconductors and opens new perspectives for the development of lanthanide-functionalized LHPs as promising materials for optoelectronic devices operating in the NIR region.

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