scholarly journals Low temperature epitaxial NiSi2 formation on Si(111) by diffusing Ni through amorphous Ni–Zr

1990 ◽  
Vol 5 (2) ◽  
pp. 341-346 ◽  
Author(s):  
R. de Reus ◽  
H. C. Tissink ◽  
F. W. Saris
Keyword(s):  
Low Temperature ◽  
Low Temperatures ◽  
Amorphous Alloys ◽  
Single Crystal Silicon ◽  
Nucleation And Growth ◽  
Annealing Process ◽  
Diffusion Barriers ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
One Step

Although amorphous alloys are known to be good diffusion barriers, amorphous nickel-zirconium is shown to react with Si at relatively low temperatures. Diffusion of Ni at 350°C through an amorphous Ni–Zr buffer layer leads to the formation of epitaxial NiSi2 on single crystal silicon substrates. Interplay of mobility and thermodynamics is applicable for epitaxial silicide nucleation and growth. Also, a one-step annealing process in oxygen ambient leads to bilayer formation of NiSi2/ZrO2 structures on silicon substrates.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

A Current Conduction Mechanism in Laser Recrystallized Silicon Metal-Oxide-Semiconductor Transistors

1983 ◽  
Vol 23 ◽  
Author(s):  
Han-Sheng Lee
Keyword(s):  
Conduction Mechanism ◽  
Single Crystal Silicon ◽  
Silicon Films ◽  
Oxide Semiconductor ◽  
Silicon Substrates ◽  
Mos Transistors ◽  
Crystal Silicon ◽  
Ion Laser ◽  
Argon Ion ◽  
A Current

ABSTRACTN-channel MOS transistors were fabricated on silicon films that had been recrystallized by an argon ion laser at different power levels. These transistors showed electrical characteristics similar, but somewhat inferior to those devices fabricated on single crystal silicon substrates. These differences are attributed to the presence of trapping states at the grain boundaries of the crystallites in the recrystallized silicon. A coulombic scattering model is presented to explain these differences. In the case of films annealed at low laser power, an additional factor of nonuniform trap state distribution is invoked to explain device characteristics. This model provides an adequate explanation for the observed transport properties of transistors fabricated from recrystallized silicon films.

scholarly journals A highly selective and sensitive H2S sensor at low temperatures based on Cr-doped α-Fe2O3 nanoparticles

RSC Advances ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 4150-4156 ◽  
Author(s):  
Dongyang Xue ◽  
Rui Zhou ◽  
Xiaoping Lin ◽  
Xiaochuan Duan ◽  
Qiuhong Li ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Temperatures ◽  
Hydrothermal Reaction ◽  
High Sensitivity ◽  
Fe2o3 Nanoparticles ◽  
Sensitivity And Selectivity ◽  
One Step

Cr-doped α-Fe2O3 nanoparticles were synthesized by one-step hydrothermal reaction and showed high sensitivity and selectivity to H2S at low temperature.

Laser Writing of High Purity Gold Lines

1989 ◽  
Vol 158 ◽  
Author(s):  
M. Jubber ◽  
J.I.B. Wilson ◽  
J.L. Davidson ◽  
P. John ◽  
P.G. Roberts
Keyword(s):  
Rectangular Cross Section ◽  
Single Crystal Silicon ◽  
Gold Surface ◽  
Decomposition Temperature ◽  
Silicon Substrates ◽  
Beam Diameter ◽  
Scanning Calorimetry ◽  
Crystal Silicon ◽  
Ion Laser ◽  
Stage Process

ABSTRACTGold tracks have been deposited on thermally oxidised and single crystal silicon, gold and nichrome coated silicon wafers by pyrolytic decomposition of gaseous alkyl (triethyl phosphine) gold(I) complexes using focussed 514 nm radiation from an argon ion laser. The precursors, RAu(I)Et3P, R = CH3, C2H5 are low melting point crystalline solids with relatively high vapour pressures (∼5 mtorr). They are representative of a class of compounds being evaluated for laser deposition of gold. Differential scanning calorimetry, DSC, shows that the thermal decomposition of MeAu(I)Et3P in the solid state is a two-stage process. The decomposition temperature is 63 ± 1°C. Tracks were deposited at laser scan speeds up to 35 μm s−1 with a beam diameter (1/e2) at the focus of ∼12 μm. SIMS, EDX and laser ionisation microprobe analysis, LIMA, were used to determine the chemical composition of the tracks. The purity of >98% is consistent with the measured resistivities (4.2 μΩ cm) at room temperature compared to bulk gold (∼2 μΩ cm). These resistivities were achieved without post deposition annealing. Stylus profilimetry and SEM data showed the lines produced from MeAu(I)Et3P have a virtually rectangular cross-section. Together with the absence of the ubiquitous λ-ripples, this feature suggests that deposition is more rapid on the gold surface than on the SiO2 substrate. Laser power thresholds are lower for silicon substrates coated with thin (5 - 10°A) films of gold or nichrome.

Selective and low temperature synthesis of polycrystalline diamond

1991 ◽  
Vol 6 (6) ◽  
pp. 1278-1286 ◽  
Author(s):  
R. Ramesham ◽  
T. Roppel ◽  
C. Ellis ◽  
D.A. Jaworske ◽  
W. Baugh
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Microwave Plasma ◽  
Diamond Particle ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Crystal Silicon ◽  
Diamond Thin Films

Polycrystalline diamond thin films have been deposited on single crystal silicon substrates at low temperatures (⋚ 600 °C) using a mixture of hydrogen and methane gases by high pressure microwave plasma-assisted chemical vapor deposition. Low temperature deposition has been achieved by cooling the substrate holder with nitrogen gas. For deposition at reduced substrate temperature, it has been found that nucleation of diamond will not occur unless the methane/hydrogen ratio is increased significantly from its value at higher substrate temperature. Selective deposition of polycrystalline diamond thin films has been achieved at 600 °C. Decrease in the diamond particle size and growth rate and an increase in surface smoothness have been observed with decreasing substrate temperature during the growth of thin films. As-deposited films are identified by Raman spectroscopy, and the morphology is analyzed by scanning electron microscopy.

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