Laser Writing of High Purity Gold Lines

1989 ◽  
Vol 158 ◽  
Author(s):  
M. Jubber ◽  
J.I.B. Wilson ◽  
J.L. Davidson ◽  
P. John ◽  
P.G. Roberts
Keyword(s):  
Rectangular Cross Section ◽  
Single Crystal Silicon ◽  
Gold Surface ◽  
Decomposition Temperature ◽  
Silicon Substrates ◽  
Beam Diameter ◽  
Scanning Calorimetry ◽  
Crystal Silicon ◽  
Ion Laser ◽  
Stage Process

ABSTRACTGold tracks have been deposited on thermally oxidised and single crystal silicon, gold and nichrome coated silicon wafers by pyrolytic decomposition of gaseous alkyl (triethyl phosphine) gold(I) complexes using focussed 514 nm radiation from an argon ion laser. The precursors, RAu(I)Et3P, R = CH3, C2H5 are low melting point crystalline solids with relatively high vapour pressures (∼5 mtorr). They are representative of a class of compounds being evaluated for laser deposition of gold. Differential scanning calorimetry, DSC, shows that the thermal decomposition of MeAu(I)Et3P in the solid state is a two-stage process. The decomposition temperature is 63 ± 1°C. Tracks were deposited at laser scan speeds up to 35 μm s−1 with a beam diameter (1/e2) at the focus of ∼12 μm. SIMS, EDX and laser ionisation microprobe analysis, LIMA, were used to determine the chemical composition of the tracks. The purity of >98% is consistent with the measured resistivities (4.2 μΩ cm) at room temperature compared to bulk gold (∼2 μΩ cm). These resistivities were achieved without post deposition annealing. Stylus profilimetry and SEM data showed the lines produced from MeAu(I)Et3P have a virtually rectangular cross-section. Together with the absence of the ubiquitous λ-ripples, this feature suggests that deposition is more rapid on the gold surface than on the SiO2 substrate. Laser power thresholds are lower for silicon substrates coated with thin (5 - 10°A) films of gold or nichrome.

A Current Conduction Mechanism in Laser Recrystallized Silicon Metal-Oxide-Semiconductor Transistors

1983 ◽  
Vol 23 ◽  
Author(s):  
Han-Sheng Lee
Keyword(s):  
Conduction Mechanism ◽  
Single Crystal Silicon ◽  
Silicon Films ◽  
Oxide Semiconductor ◽  
Silicon Substrates ◽  
Mos Transistors ◽  
Crystal Silicon ◽  
Ion Laser ◽  
Argon Ion ◽  
A Current

ABSTRACTN-channel MOS transistors were fabricated on silicon films that had been recrystallized by an argon ion laser at different power levels. These transistors showed electrical characteristics similar, but somewhat inferior to those devices fabricated on single crystal silicon substrates. These differences are attributed to the presence of trapping states at the grain boundaries of the crystallites in the recrystallized silicon. A coulombic scattering model is presented to explain these differences. In the case of films annealed at low laser power, an additional factor of nonuniform trap state distribution is invoked to explain device characteristics. This model provides an adequate explanation for the observed transport properties of transistors fabricated from recrystallized silicon films.

High Hf Content NITIHF Shape Memory Films

1999 ◽  
Vol 604 ◽  
Author(s):  
Chen Zhang ◽  
Paul E. Thoma ◽  
Ralph Zee
Keyword(s):  
Heat Treatment ◽  
Substrate Temperature ◽  
Heat Treatment Temperature ◽  
Single Crystal Silicon ◽  
Treatment Temperature ◽  
Silicon Substrates ◽  
Scanning Calorimetry ◽  
Free Standing ◽  
Crystal Silicon ◽  
Transformation Temperatures

AbstractPolycrystalline NiTiHf films with around 9at% Hf have been successfully deposited from a single NiTiHf target using a DC magnetron sputtering system. Free standing films were obtained by depositing the films on single crystal silicon substrates. Thickness of the films was controlled between 10-12µm. In this investigation, the effects of deposition temperature on the crystallinity and transformation temperatures of the films were studied. Substrate temperature during deposition was varied between 300°C and 700°C at 100°C intervals. The influence of heat treatment temperature on the properties of the films was also investigated. The heat treatment temperature was between 300°C and 800°C at 100° C intervals. Transformation temperatures of these films were determined by differential scanning calorimetry (DSC). The crystallinity was determined using x-ray diffractometry. It was found that all the as-deposited films were crystalline even when the substrate temperature was as low as 300°C. Both martensite and austenite transformation temperatures increase with increasing substrate temperature and increasing heat treatment temperature.

Electron-Beam Assisted CVD of Silicon Homoepitaxial Films

1988 ◽  
Vol 129 ◽  
Author(s):  
J. P. West ◽  
C. B. Fleddermann
Keyword(s):  
Electron Beam ◽  
Single Crystal Silicon ◽  
Beam Current ◽  
Silicon Substrates ◽  
Beam Diameter ◽  
Epitaxial Silicon ◽  
Large Area ◽  
Plasma Etch ◽  
Crystal Silicon

ABSTRACTThe use of a wide-area electron beam to aid the deposition of epitaxial silicon films has been studied. The electron beam used in this study is generated using a cold cathode, abnormal-glow discharge which allows a wide variation of electron energy and beam current. Depositions are performed on single crystal silicon substrates which are prepared using standard wet chemical silicon cleaning techniques and an in situ plasma etch using nitrogen tri-fluoride diluted in hydrogen. The beam diameter is approximately 10 cm and can readily be scaled up to accommodate larger diameters, allowing great potential for large area single wafer deposition. Using electron beams generated in this system, we have demonstrated enhanced growth rates and improved crystalline quality for films grown withelectronbeam enhancement.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

Heteroepitaxial Metal Oxides on Silicon by Laser Ablation

1990 ◽  
Vol 191 ◽  
Author(s):  
D. B. Fenner ◽  
D. K. Fork ◽  
G. A. N. Connell ◽  
J. B. Boyce ◽  
F. A. Ponce ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Single Crystal Silicon ◽  
Native Oxide ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Ybco Films ◽  
Zero Resistance ◽  
High Degree

ABSTRACTThin epitaxial films of cubic - fluorite structured PrO2 and YSZ (yttria- stabilized zirconia) were grown on single crystal silicon substrates using the laser ablation - deposition technique. X-ray diffraction theta two - theta, omega rocking and phi scans indicate a high degree of epitaxial orientation of the films to the Si lattice. The highest quality of epitaxy was obtained with the PrO2 [111] oriented normal to Si(111) surfaces and the cubic YSZ [100] normal to Si(100) surfaces. For both PrO2 and YSZ, high epitaxial quality required the removal of the Si native oxide prior to deposition and careful control of the deposition environment. It was further found that the YSZ films on Si(100) were an excellent surface for subsequent laser ablation of YBCO films by the usual in situ process. The resistivity of this YBCO was ≈ 250 micro-ohm-cm at 300 K, extrapolated to the resistivity -temperature origin, showed a sharp transition to zero resistance at ≈ 85 K and was nearly identical to high quality YBCO films deposited on (bulk) YSZ substrates.

Silicon Carbide: Progress in Crystal Growth

1987 ◽  
Vol 97 ◽  
Author(s):  
J. Anthony Powell
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
High Temperature ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Large Area ◽  
High Quality ◽  
Crystal Silicon

ABSTRACTSilicon carbide (SiC), with a favorable combination of semiconducting and refractory properties, has long been a candidate for high temperature semiconductor applications. Research on processes for producing the needed large-area high quality single crystals has proceeded sporadically for many years. Two characteristics of SiC have aggravated the problem of its crystal growth. First, it cannot be melted at any reasonable pressure, and second, it forms many different crystalline structures, called polytypes. Recent progress in the development of two crystal growth processes will be described. These processes are the modified Lely process for the growth of the alpha polytypes (e.g. 6H SiC), and a process for the epitaxial growth of the beta polytype (i.e. 3C or cubic SiC) on single crystal silicon substrates. A discussion of the semiconducting qualities of crystals grown by various techniques will also be included.

Protective CVD Mullite Coatings on Single-Crystal Silicon Substrates

JOM ◽  
2013 ◽  
Vol 65 (4) ◽  
pp. 567-573 ◽  
Author(s):  
Jiapeng Xu ◽  
Daniel Erickson ◽  
Sudesna Roy ◽  
Vinod Sarin
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Mullite Coatings
Sign in / Sign up

Export Citation Format

Share Document