Microstructure at the interface between AIN and a Ag–Cu–Ti braze alloy

1990 ◽  
Vol 5 (7) ◽  
pp. 1520-1529 ◽  
Author(s):  
A. H. Carim ◽  
R. E. Loehman
Keyword(s):  
Electron Microscopy ◽  
Thermal Expansion ◽  
Structural Integrity ◽  
Lattice Mismatch ◽  
Braze Alloy ◽  
High Resolution Electron Microscopy ◽  
Nitride Layer ◽  
Orientation Relationships ◽  
Transmission Electron ◽  
Resolution Electron

The joining of aluminum nitride by active metal brazing with a Ag–Cu–Ti foil has been investigated in cross section by transmission electron microscopy. The reaction of AIN with the braze alloy results in the formation of continuous TiN and (Ti, Cu, Al)6N (η-phase) layers at the interface. AIN grains at the interface often display arrays of dislocations, presumably arising from thermal expansion mismatch between the AIN and the TiN (the coefficients of thermal expansion are 43 ⊠ 10−7/°C and 80 ⊠ 10−7/°C, respectively). The adjoining TiN contains small Cu precipitates and may also contain numerous defects. Titanium preferentially penetrates the AIN grain boundaries, resulting in finger-like TiN intrusions into the substrate, which sometimes cover entire AIN grains in a TiN shell. On the other side of the TiN, a continuous layer of equiaxed, defect-free η–nitride grains is found. Beyond this η–nitride layer is the remaining mixture of metallic Ag and Cu. High-resolution electron microscopy demonstrates that the AIN–TiN and TiN–η boundaries are abrupt and contain no additional crystalline or amorphous intervening phases. Particular orientation relationships are occasionally observed at the AIN–TiN interface; these are not always the ones that produce the minimum lattice mismatch. The implications of the observed morphology with respect to the reaction sequence, transitional phases, and structural integrity of the joint are discussed.

Epitaxial Growth and Structure of Cubic and Pseudocubic Perovskite Films on Perovskite Substrates

1995 ◽  
Vol 401 ◽  
Author(s):  
P. A. Langjahr ◽  
T. Wagner ◽  
M. RÜhle ◽  
F. F. Lange
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
High Resolution Electron Microscopy ◽  
Lattice Parameter ◽  
Ternary Oxide ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Resolution Electron

AbstractCubic and pseudocubic perovskite films on perovskite substrates are used to study the influence of the lattice mismatch on the epitaxial growth of thin films on substrates of the same structure. For the growth of the films, a metalorganic decomposition route (MOD) using 2-ethylhexanoates and neodecanoates as precursors, was developed. The decomposition of the precursors was investigated with thermogravimetric analysis (TGA) and x-ray diffraction (XRD). The films were spin-coated on (001)-oriented SrTiO3- and LaAlO3-substrates, pyrolyzed and afterwards annealed between 600°C and 1200°C. XRD-nvestigations and conventional transmission electron microscopy (CTEM) show, that epitaxial films with the orientation relationship [100](001) film ║ [100](001) substrate can be grown. With XRD, it could be shown, that not only ternary oxide films (SrZrO3, BaZrO3 and BaCeO3), but also perovskite solid solution films (SrTi0.5Zr0.5O3and BaCe0.5Zr0.5O3) can be prepared. Strong interdiffusion, detected by a shift of the film lattice parameter towards the substrate lattice parameter was found in SrZrO3- and BaZrO3-films on SrTiO3, annealed at temperatures above 1050°C. High resolution electron microscopy (HREM) studies of SrZrO3 on SrTiO3 show that a crystalline semicoherent interface with a periodical array of misfit dislocations is present.

Hrtem of the Cu/Mno Interface in an Internally Oxidized Cumn Alloy

1990 ◽  
Vol 183 ◽  
Author(s):  
F. Ernst
Keyword(s):  
Electron Microscopy ◽  
Lattice Mismatch ◽  
Particle Morphology ◽  
High Resolution Electron Microscopy ◽  
Orientation Relationships ◽  
Coherent Interface ◽  
Resolution Electron ◽  
Characteristic Particle ◽  
Interface Structures ◽  
The Relationship

AbstractThe structure of the Cu/MnO interface has been studied using high resolution electron microscopy (HRTEM). Interfaces were formed by internal oxidation of a CuMn alloy. In the course of the reaction, MnO particles precipitate in several special orientations relative to the Cu lattice: “parallel” topotaxy, “twin” topotaxy, and a 55°[110] rotation yielding (111)Cu∥(002)MnO. Each of the three Cu/MnO orientation relationships has a characteristic particle morphology reflecting thermodynamically favourable interface structures. In parallel topotaxy MnO particles preferentially form flat {111}Cu/{111} MnO interfaces with a lattice mismatch of 21%. Although this mismatch is large, the existence of coherence strains in the Cu cannot be excluded. MnO particles in the 55°[110] orientation form regions of semi-coherent Interface where {200}MnO planes face a set of parallel {111} Cu planes with a mismatch of only 6%. This interface variant exhibits equally spaced steps, every 16 to 18 Cu {111} planes. Parallel to every step there is a misfit dislocation in the Cu at a stand-off distance of about 2 Cu {111} spacings. The relationship between structure and energy of the Cu/MnO interface is discussed.

High Resolution Transmission Electron Microscopy Investigation of the Defect Structure in CdMnTe Layers Grown on GaAs by MOCVD

1987 ◽  
Vol 102 ◽  
Author(s):  
J. H. Mazur ◽  
P. Grodzinski ◽  
A. Nouhi ◽  
R. J. Stirn
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Organic Chemical ◽  
Orientation Relationships ◽  
Transmission Electron ◽  
Microscopy Investigation ◽  
Resolution Electron

ABSTRACTElectron diffraction and high resolution electron microscopy were used for analysis of Cd1−xMnxTe films grown on (100)2°[011] GaAs substrates by metal organic chemical vapor deposition (MOCVD) at 420°C (x=O.3) and 450°C (x=0.5). It has been found that these two conditions produce dramatically different microstructures. Two orientation relationships of the epilayers with respect to the substrate were observed. It is suggested that this phenomenon may be related to GaAs substrate surface morphology.

Microstructural characteristics of conductive SrRuO3 thin films formed by pulsed-laser deposition

1998 ◽  
Vol 13 (8) ◽  
pp. 2302-2307 ◽  
Author(s):  
P. Lu ◽  
F. Chu ◽  
Q. X. Jia ◽  
T. E. Mitchell
Keyword(s):  
Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Resolution Electron Microscopy ◽  
Laser Deposition ◽  
Structural Defects ◽  
Orientation Relationships ◽  
Coherent Interface ◽  
Transmission Electron ◽  
Resolution Electron

Transmission electron microscopy and high-resolution electron microscopy have been used to study microstructural properties of conductive SrRuO3 films grown by pulsed laser deposition on (001) LaAlO3 and (001) SrTiO3 substrates. It was found that the SrRuO3 films deposited on both substrates consist of mixed domains of [001] and [110] orientations, with orientation relationships that can be described as (i) (001)f ‖ (001)s and [110]f ‖ [100]s and (ii) (110)f ‖ (001)s and [001]f ‖ [100]s, respectively. The SrRuO3 films deposited on SrTiO3, in particular, were found to have a layered domain structure, with the [110] domain grown initially on the substate, followed by growth of the [001] oriented domain with increasing thickness. The films on SrTiO3 are strained and have a coherent interface with the substrate. The SrRuO3 films deposited on LaAlO3, on the other hand, contain a high density of structural defects such as stacking faults and microtwins on the (022) planes. Microtwins as large as 50 nm in thickness are observed in the films deposited on LaAlO3. Possible causes for the observed structural defects in the films are discussed.

High-Resolution Electron Microscopy of Interfaces In Ain - Braze Metal Alloy Systems

1989 ◽  
Vol 159 ◽  
Author(s):  
A. H. Carim
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Nitride Phase ◽  
Orientation Relationships ◽  
Transmission Electron ◽  
Resolution Electron ◽  
High Resolution Images ◽  
Lattice Planes ◽  
Specific Orientation

ABSTRACTThe microstructural aspects of active brazing of AIN with a Ag-Cu-Ti alloy have been investigated. A series of reaction product layers are formed. TiN is produced in contact with the polycrystalline, bulk AIN. High-resolution transmission electron microscopy and microdiffraction demonstrate that some of the TiN grains at the interface display specific orientation relationships with respect to the adjoining AIN crystallites. As has sometimes been observed in studies of epitaxy in other systems, these relationships are not necessarily those that provide the minimum geometrical mismatch between one or more sets of lattice planes. Farther from the substrate, an fl-type nitride phase with composition (Ti,Cu,Al)6N occurs as a reaction product. High-resolution images confirm the absence of amorphous or crystalline intervening phases at the TiN-ŋ interface and at ŋ grain boundaries.

Interface structures in polycrystalline ceramic materials

1986 ◽  
Vol 44 ◽  
pp. 468-471
Author(s):  
K. J. Morrissey
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Physical And Mechanical Properties ◽  
High Resolution Electron Microscopy ◽  
Ceramic Materials ◽  
Polycrystalline Materials ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Interface Structures

Grain boundaries and interfaces play an important role in determining both physical and mechanical properties of polycrystalline materials. To understand how the structure of interfaces can be controlled to optimize properties, it is necessary to understand and be able to predict their crystal chemistry. Transmission electron microscopy (TEM), analytical electron microscopy (AEM,), and high resolution electron microscopy (HREM) are essential tools for the characterization of the different types of interfaces which exist in ceramic systems. The purpose of this paper is to illustrate some specific areas in which understanding interface structure is important. Interfaces in sintered bodies, materials produced through phase transformation and electronic packaging are discussed.

High Resolution Transmission Electron Microscopy of an automobile catalytic converter

1990 ◽  
Vol 48 (4) ◽  
pp. 242-243
Author(s):  
Jan-Olle Malm ◽  
Jan-Olov Bovin
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Catalytic Converter ◽  
Active Material ◽  
Image Intensifier ◽  
High Resolution Electron Microscopy ◽  
Detailed Knowledge ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Atomic Surface

Understanding of catalytic processes requires detailed knowledge of the catalyst. As heterogeneous catalysis is a surface phenomena the understanding of the atomic surface structure of both the active material and the support material is of utmost importance. This work is a high resolution electron microscopy (HREM) study of different phases found in a used automobile catalytic converter.The high resolution micrographs were obtained with a JEM-4000EX working with a structural resolution better than 0.17 nm and equipped with a Gatan 622 TV-camera with an image intensifier. Some work (e.g. EDS-analysis and diffraction) was done with a JEM-2000FX equipped with a Link AN10000 EDX spectrometer. The catalytic converter in this study has been used under normal driving conditions for several years and has also been poisoned by using leaded fuel. To prepare the sample, parts of the monolith were crushed, dispersed in methanol and a drop of the dispersion was placed on the holey carbon grid.

HIGH RESOLUTION ELECTRON MICROSCOPE STUDY OF CdTe-Cd0.6Mn0.4 Te SUPERLATTICES

1985 ◽  
Vol 56 ◽  
Author(s):  
C. CHOI ◽  
N. OTSUKA ◽  
L. A. KOLODZIEJSKI ◽  
R. L. GUNSHOR-a
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Phase Contrast ◽  
Electron Microscope Study ◽  
Lattice Mismatch ◽  
Thick Layer ◽  
High Resolution Electron Microscopy ◽  
Misfit Dislocations ◽  
Resolution Electron ◽  
High Resolution Electron Microscope

AbstractStructures of CdTe-Cd0.6Mn0.4Te superlattices which are caused by the lattice mismatch between suterlattice layers have been studied by high resolution electron microscopy (HREM). In thin-layer superlattices, the crystal lattice in each layeris elastically distorted, resulting in the change of the crystal symmetry from cubic to rhombohedral. The presence of the small rhombohedral distrotion has been confirmed through a phase contrast effect in HREM images. In a thick-layer superlattice, the lattice mismatch is accommodated by dissociated misfit dislocations. Burgers vectors of partial misfit dislocations have been identified from the shift of lattice fringes in HREM images.

EPITAXY OF CdTe ON (100) GaAs

1985 ◽  
Vol 56 ◽  
Author(s):  
L. A. KOLODZIEJSKI ◽  
R. L. GUNSHOR ◽  
N. OTSUKA ◽  
C. CHOI
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Strong Interaction ◽  
Gaas Substrate ◽  
Specific Growth ◽  
Lattice Mismatch ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Selection Of

AbstractTwo epitaxial orientations [(111) and (100)] of CdTe are grown on (100) GaAs in the presence of a 14.6% lattice mismatch. Consistent nucleation of a selected orientation is achieved by employing specific growth techniques. The growth techniques for selection of both orientations are described. High resolution electron microscopy has been used to investigate the interface between the CdTe epilayer and the GaAs substrate. For the (111) orientation strong interaction exists between the epitaxial deposit and the substrate, whereas a weakened interaction between deposit and substrate induces the (100) orientation.

Transmission electron microscopy observation in a liquid-phase-sintered SiC with oxynitride glass

2001 ◽  
Vol 16 (8) ◽  
pp. 2189-2191 ◽  
Author(s):  
Guo-Dong Zhan ◽  
Mamoru Mitomo ◽  
Young-Wook Kim ◽  
Rong-Jun Xie ◽  
Amiya K Mukherjee
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
High Resolution Electron Microscopy ◽  
Nitrogen Atmosphere ◽  
X Ray Diffraction ◽  
Sintering Additive ◽  
Transmission Electron ◽  
High Annealing ◽  
Resolution Electron ◽  
Oxynitride Glass

Using a pure α–SiC starting powder and an oxynitride glass composition from the Y–Mg–Si–Al–O–N system as a sintering additive, a powder mixture was hot-pressed at 1850 °C for 1 h under a pressure of 20 MPa and further annealed at 2000 °C for 4 h in a nitrogen atmosphere of 0.1 MPa. High-resolution electron microscopy and x-ray diffraction studies confirmed that a small amount of β–SiC was observed in the liquid-phase-sintered α–SiC with this oxynitride glass, indicating stability of β–SiC even at high annealing temperature, due to the nitrogen-containing liquid phase.

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