Composition/structure/property relations of multi-ion-beam reactive sputtered lead lanthanum titanate thin films: Part III. Electrical properties

1993 ◽  
Vol 8 (9) ◽  
pp. 2203-2215 ◽  
Author(s):  
G.R. Fox ◽  
S.B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Perovskite Phase ◽  
Ion Beam ◽  
Crystallographic Structure ◽  
Structure Property ◽  
Lanthanum Titanate ◽  
Percolation Effect ◽  
Composition Structure ◽  
High Dielectric

This paper, the third and final of a three part series, presents the electrical properties of postdeposition annealed, lead lanthanum titanate (PLT) thin films deposited by multi-ion-beam reactive sputtering (MIBERS). Also, a model is presented that explains the relations among composition, crystallographic structure, microstructure, and electrical properties of the PLT thin films. Thin films of PLT consisting of the perovskite phase exhibit 〈100〉 textured microstructures. Addition of a critical quantity of excess PbO results in the loss of this 〈100〉 texture, and continuity of the perovskite phase is disrupted while both excess PbO and porosity phases become continuous due to a percolation effect. Films with textured microstructures consisting of a continuous perovskite phase exhibit relatively high dc resistivities, high dielectric permittivities, and high remanent polarizations. At the transition between textured and nontextured microstructures, a discontinuous drop in the electrical properties occurs due to the ensuing continuity of the excess PbO and porosity. These composition-induced changes in the electrical properties were quantitatively modeled by applying a simple mixing rule model to the microstructure model developed in Part II of this series.

Composition/structure/property relations of multi-ion-beam reactive sputtered lead lanthanum titanate thin films: Part I. Composition and structure analysis

1992 ◽  
Vol 7 (11) ◽  
pp. 3039-3055 ◽  
Author(s):  
G.R. Fox ◽  
S.B. Krupanidhi ◽  
K.L. More ◽  
L.F. Allard
Keyword(s):  
Thin Films ◽  
Physical Vapor Deposition ◽  
Ion Beam ◽  
Ferroelectric Properties ◽  
Crystallographic Structure ◽  
Zone Model ◽  
Structure Property ◽  
Lanthanum Titanate ◽  
Porous Microstructures ◽  
Structure And Microstructure

Material properties are greatly dependent upon the structure of the material. This paper, the first of three parts, discusses how composition influences the crystallographic structure and microstructure of lead lanthanum titanate (PLT) thin films grown by the multi-ion-beam reactive sputtering (MIBERS) technique. A transmission electron microscopy (TEM) study detailing the relationship between crystallographic texturing and microstructure development will be presented in a second paper. The dependence of the ferroelectric properties on observed crystallographic structure and microstructure is presented in the third paper of this series. As-deposited PLT microstructures coincide with the structure zone model (SZM) which has been developed to describe the microstructure of thin films deposited by physical vapor deposition. The as-deposited PLT structures are altered during post-deposition annealing as a result of crystallization and PbO evaporation. Amorphous films with more than 10 mole % excess PbO become polycrystalline with porous microstructures after annealing. When there is less PbO in the as-deposited film, 〈100〉 texture and dense structures are observed. Porosity results from PbO evaporation, and 〈100〉 texture is inhibited by excess PbO.

Structure-Property Relationship of Ion-Beam Sputtered Nd-Fe-B Magnetic Thin Films On (111) Silicon

1994 ◽  
Vol 354 ◽  
Author(s):  
Anthony S. Nazareth ◽  
Harsh Deep Chopra ◽  
D. K. Sood ◽  
R. B. Zmood
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Magnetic Thin Films ◽  
Misfit Strain ◽  
Crystallographic Structure ◽  
Nominal Composition ◽  
Structure Property ◽  
X Ray Diffraction ◽  
Relationship Of

AbstractA focussing grid broad beam Kaufman source, using argon ions on a target of nominal composition Nd2Fei4B has been employed to sputter deposit magnetic thin films of thicknesses ranging from 800 â to 1300 â on silicon-(lll) substrates at room temperature. These films were characterised for their composition depth profile by Rutherford Backscattering Spectroscopy, while x-ray diffraction was used to study the crystallographic structure. Due to a close match between (111) Si with (220) Nd2Fej4B lattice spacings, preferred crystallographic texturing was expected, and experimental results showed a greatly enhanced (220) texture. The degradation in magnetic properties was attributed to the presence of oxygen in the films as indicated by concentration depth profiles. It is premised that another significant role of oxygen may be to relieve the misfit strain across the interface by its incorporation within the Nd2Fej4B phase.

Composition/structure/property relations of multi-ion-beam reactive sputtered lead lanthanum titanate thin films: Part II. Textured microstructure development

1993 ◽  
Vol 8 (9) ◽  
pp. 2191-2202 ◽  
Author(s):  
G.R. Fox ◽  
S.B. Krupanidhi ◽  
K.L. More
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Perovskite Phase ◽  
Ion Beam ◽  
Cluster Structure ◽  
Zone Model ◽  
Microstructure Development ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lanthanum Titanate

This paper, the second of three parts, presents a detailed analysis of the crystallographic texture observed in lead lanthanum titanate (PLT) thin films deposited by multi-ion-beam reactive sputtering. Since films were deposited at a substrate temperature of 100 °C, they exhibit an amorphous structure that can be described by the structure zone model. The as-deposited microstructure is transformed via crystallization of the perovskite phase and PbO evaporation during postdeposition annealing. Transmission electron microscopy was used to determine that phase pure PLT films develop textured clusters (as large as 700 nm in diameter) consisting of 〈100〉 aligned 10 nm nanocrystals. As excess PbO is added to the PLT film, the textured cluster size decreases until only isolated PLT nanocrystals exist. Below a critical quantity of excess PbO in the as-deposited film (approximately 15 mole%), the textured cluster structure produces a 〈100〉 texture through the film thickness, which generates x-ray diffraction patterns typical of textured microstructures. At high PbO contents, the excess PbO causes the formation of clusters that are smaller than the film thickness, resulting in a polycrystalline-type x-ray diffraction pattern. A qualitative model describing microstructure development is presented.

Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

2005 ◽  
Vol 492 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
Zhi Yan ◽  
Zhi Tang Song ◽  
Wei Li Liu ◽  
Qing Wan ◽  
Fu Min Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Ion Beam ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Ion Beam Assisted Deposition ◽  
P Type

OPTICAL AND ELECTRICAL PROPERTIES OF ARGON ION BEAM IRRADIATED PVA/Ag NANOCOMPOSITES

2017 ◽  
Vol 24 (03) ◽  
pp. 1750038 ◽  
Author(s):  
A. M. ABDEL REHEEM ◽  
A. ATTA ◽  
T. A. AFIFY
Keyword(s):  
Silver Nanoparticles ◽  
Electrical Properties ◽  
Ion Beam ◽  
Composite Films ◽  
Band Gap Energy ◽  
Dielectric Measurement ◽  
Optical And Electrical Properties ◽  
Structure Property ◽  
Casting Technique ◽  
Argon Ion

In this work, PVA/Ag nanocomposites films were prepared using solution casting technique, these films were irradiated with Argon ion beam to modify the structure. The main objective of the study is to enhance the optical and electrical properties of the polymer nanocomposites films by irradiation. The conventional characterization techniques such as UV–Visible spectroscopy, X-ray diffraction (XRD), Fourier transform infrared (FTIR), transmission electron microscope (TEM) and dielectric measurement are employed to understand the structure–property relations. FTIR analysis of these composite films shows chemical changes and a significant impact on them can be observed after irradiation. After doping, the XRD data shows silver nanoparticles formation in the PVA polymer. The band gap energy of samples is decreased with increases in the concentration of silver nanoparticles and ion beam fluence, which gives clear indication that ion beam irradiation induced defects are formed in the composite systems. The electrical conductivity, dielectric loss [Formula: see text] and dielectric constant [Formula: see text] are increased with increasing ion beam fluence and Ag dopant concentration.

scholarly journals STRUCTURAL AND ELECTRICAL PROPERTIES OF TANTALUM PENTAOXIDE (Ta2O5) THIN FILMS – A REVIEW

2013 ◽  
Vol 22 ◽  
pp. 564-569
Author(s):  
KANTA RATHEE ◽  
B. P. MALIK
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Metal Oxide ◽  
High Dielectric Constant ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Structural And Electrical Properties ◽  
High Dielectric ◽  
Deposited Films

Down scaling of complementary metal oxide semiconductor transistors has put limitations on silicon dioxide to be used as an effective dielectric. It is necessary to replace the SiO 2 with a physically thicker layer of oxides of high dielectric constant. Thus high k dielectrics are used to suppress the existing challenges for CMOS scaling. Many new oxides are being evaluated as gate dielectrics such as Ta2O5 , HfO2 , ZrO2 , La2O3 , HfO2 , TiO2 , Al2O3 , Y2O3 etc but it was soon found that these oxides in many respects have inferior electronic properties to SiO2 . But the the choice alone of suitable metal oxide with high dielectric constant is not sufficient to overcome the scaling challenges. The various deposition techniques and the conditions under which the thin films are deposited plays important role in deciding the structural and electrical properties of the deposited films. This paper discusses in brief the various deposition conditions which are employed to improve the structural and electrical properties of the deposited films.

Effect of Au ion beam on structural, surface, optical and electrical properties of ZnO thin films prepared by RF sputtering

2018 ◽  
Vol 44 (14) ◽  
pp. 16464-16469 ◽  
Author(s):  
M. Fiaz Khan ◽  
K. Siraj ◽  
A. Sattar ◽  
S. Majeed ◽  
H. Faiz ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ion Beam ◽  
Rf Sputtering ◽  
Zno Thin Films ◽  
Optical And Electrical Properties ◽  
Surface Optical ◽  
Structural Surface
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