Composition/structure/property relations of multi-ion-beam reactive sputtered lead lanthanum titanate thin films: Part II. Textured microstructure development

1993 ◽  
Vol 8 (9) ◽  
pp. 2191-2202 ◽  
Author(s):  
G.R. Fox ◽  
S.B. Krupanidhi ◽  
K.L. More
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Perovskite Phase ◽  
Ion Beam ◽  
Cluster Structure ◽  
Zone Model ◽  
Microstructure Development ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lanthanum Titanate

This paper, the second of three parts, presents a detailed analysis of the crystallographic texture observed in lead lanthanum titanate (PLT) thin films deposited by multi-ion-beam reactive sputtering. Since films were deposited at a substrate temperature of 100 °C, they exhibit an amorphous structure that can be described by the structure zone model. The as-deposited microstructure is transformed via crystallization of the perovskite phase and PbO evaporation during postdeposition annealing. Transmission electron microscopy was used to determine that phase pure PLT films develop textured clusters (as large as 700 nm in diameter) consisting of 〈100〉 aligned 10 nm nanocrystals. As excess PbO is added to the PLT film, the textured cluster size decreases until only isolated PLT nanocrystals exist. Below a critical quantity of excess PbO in the as-deposited film (approximately 15 mole%), the textured cluster structure produces a 〈100〉 texture through the film thickness, which generates x-ray diffraction patterns typical of textured microstructures. At high PbO contents, the excess PbO causes the formation of clusters that are smaller than the film thickness, resulting in a polycrystalline-type x-ray diffraction pattern. A qualitative model describing microstructure development is presented.

A study of barium strontium titanate thin films for use in bypass capacitors

1998 ◽  
Vol 13 (1) ◽  
pp. 197-204 ◽  
Author(s):  
B. A. Baumert ◽  
L-H. Chang ◽  
A. T. Matsuda ◽  
C. J. Tracy ◽  
N. G. Cave ◽  
...  
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barium Strontium ◽  
Aluminum Metallization ◽  
On Chip ◽  
Lower Temperature ◽  
Kinetics Of

Physical and electrical characterization techniques have been applied to the problem of developing a lower temperature process for spin-on Ba0.7Sr0.3TiO3 thin films and capacitors compatible with on-chip aluminum metallization. The films were prepared by spin-coating from carboxylate precursors and were processed at temperatures between 650 °C and 450 °C. Capacitors annealed at higher temperatures have a dielectric constant (κ) of 382, a C/A of 20 fF/μm2, and a leakage current density of 2 × 10−7 A/cm2 at 3.3 V. Those processed at 450 °C show occasionally promising but inconsistent results, correlated using TEM images with locally variable crystallization into the perovskite phase. The kinetics of the spin-on solution chemical decomposition and crystallization has been investigated through the use of x-ray diffraction (XRD), thermogravimetric analysis (TGA), and Raman spectroscopy.

X-ray diffraction analysis for thin films of PbTiO3-La2/3TiO3 prepared by the sol-gel method

1994 ◽  
Vol 9 (8) ◽  
pp. 2133-2137 ◽  
Author(s):  
Hideki Yoshioka
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Diffraction Method ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
X Ray ◽  
Coating Methods ◽  
Diffraction Patterns ◽  
System 1

Thin films in the system (1 - x) PbTiO3−xLa2/3TiO3 were prepared by the sol-gel and dip-coating methods. Phases deposited in the films and the lattice parameters as a function of the composition were investigated by the x-ray diffraction method. The solid solutions with a perovskite structure were formed as a single phase with x up to 0.9. For the composition of x = 1.0, metastable La-Ti-O perovskite phase with a small amount of the impurity phase, La2Ti2O7, was obtained. Simulation of x-ray diffraction patterns based on the defect structure model shows that the structure of the La-Ti-O perovskite phase includes randomly distributed cation vacancies at the A-site, namely (La2/3□1/3)TiO3.

scholarly journals Superconducting YBaCuO thin Films by Cu-Ion Implantation

1990 ◽  
Vol 201 ◽  
Author(s):  
Kevin M. Hubbard ◽  
Nicole Bordes ◽  
Michael Nastasi ◽  
Joseph R. Tesmer
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Ion Implantation ◽  
Normal State ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

AbstractWe have investigated the fabrication of thin-film superconductors by Cu-ion implantation into initially Cu-deficient Y(BaF2)Cu thin films. The precursor films were co-evaporated on SrTiO3 substrates, and subsequently implanted to various doses with 400 keV 63Cu2+. Implantations were preformed at both LN2 temperature and at 380°C. The films were post-annealed in oxygen, and characterized as a function of dose by four-point probe analysis, X-ray diffraction, ion-beam backscattering and channeling, and scanning electron microscopy. It was found that a significant improvement in film quality could be achieved by heating the films to 380°C during the implantation. The best films became fully superconducting at 60–70 K, and exhibited good metallic R vs. T. behavior in the normal state.

scholarly journals Strain depth profiles in thin films extracted from in-plane X-ray diffraction

2021 ◽  
Vol 54 (1) ◽  
Author(s):  
Claudia Cancellieri ◽  
Daniel Ariosa ◽  
Aleksandr V. Druzhinin ◽  
Yeliz Unutulmazsoy ◽  
Antonia Neels ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Thickness ◽  
Depth Profile ◽  
Film Surface ◽  
Inverse Laplace Transform ◽  
X Ray Diffraction ◽  
X Ray ◽  
Stress Gradients ◽  
Dependent Strain

Thin films generally contain depth-dependent residual stress gradients, which influence their functional properties and stability in harsh environments. An understanding of these stress gradients and their influence is crucial for many applications. Standard methods for thin-film stress determination only provide average strain values, thus disregarding possible variation in strain/stress across the film thickness. This work introduces a new method to derive depth-dependent strain profiles in thin films with thicknesses in the submicrometre range by laboratory-based in-plane grazing X-ray diffraction, as applied to magnetron-sputtering-grown polycrystalline Cu thin films with different thicknesses. By performing in-plane grazing diffraction analysis at different incidence angles, the in-plane lattice constant depth profile of the thin film can be resolved through a dedicated robust data processing procedure. Owing to the underlying intrinsic difficulties related to the inverse Laplace transform of discrete experimental data sets, four complementary procedures are presented to reliably extract the strain depth profile of the films from the diffraction data. Surprisingly, the strain depth profile is not monotonic and possesses a complex shape: highly compressive close to the substrate interface, more tensile within the film and relaxed close to the film surface. The same strain profile is obtained by the four different data evaluation methods, confirming the validity of the derived depth-dependent strain profiles as a function of the film thickness. Comparison of the obtained results with the average in-plane stresses independently derived by the standard stress analysis method in the out-of-plane diffraction geometry validates the solidity of the proposed method.

Residual Stress Analysis of Al Alloy Thin Films by X-Ray Diffraction as a Function of Film Thickness

1988 ◽  
Vol 130 ◽  
Author(s):  
Carla J. Shute ◽  
J. B. Cohen ◽  
D. A. Jeannottea
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Film Thickness ◽  
Stress Analysis ◽  
Metal Film ◽  
High Stress ◽  
Al Alloy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Residual Stress Analysis

AbstractResidual stress has been measured as a function of layer thickness in thin films of an Al alloy on oxidized Si by the x-ray “d” versus sin2ψ technique. Samples with and without a passivation layer were examined. The results show an increase in residual stress with decreasing film thickness for the passivated samples and indicates that the interface between the metal film and SiO2 may be a region of high stress.

Processing Effects on the Contact Resistance of Ion Beam Sputtered Silver on Highly Oriented C-Axis and A-Axis YBCO Films

1992 ◽  
Vol 275 ◽  
Author(s):  
M. Narbutovskih ◽  
J. Rosner ◽  
P. Merchant ◽  
R. D. Jacowitz
Keyword(s):  
Thin Films ◽  
Contact Resistance ◽  
Ion Beam ◽  
Substrate Surface ◽  
Amorphous Layer ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Ion Beam Etching ◽  
X Ray ◽  
Processing Effects

ABSTRACTThis paper reports on the processes used to achieve low resistance silver contacts to YBCO thin films that have either c-axis or a-axis orientation. Characterization by x-ray diffraction and TEM verified that these films are highly oriented with either the a or the c axis oriented perpendicular to the substrate surface. TEM examination of some of the Ag/YBCO interfaces reveals the presence of an amorphous layer. We will describe the effects of ion beam etching and RTA alloying on the contact resistivity for both orientations.

Preparation of TiFe thin Films by Pulsed Ion Beam Evaporation

2001 ◽  
Vol 697 ◽  
Author(s):  
Hisayuki Suematsu ◽  
Tsuyoshi Saikusa ◽  
Tsuneo Suzuki ◽  
Weihua Jiang ◽  
Kiyoshi Yatsui
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulse Width ◽  
Ion Beam ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
A Current

AbstractThin films of titanium iron (TiFe) were prepared by a pulsed ion-beam evaporation (IBE) method. A pulsed ion beam of proton accelerated at 1 MV (peak) with a pulse width of 50 ns and a current of 70 kA was focused on TiFe alloy targets. Soda lime glass substrates were placed in front of the targets. Phases in the thin films were identified by X-ray diffraction (XRD). XRD results revealed that the thin films deposited on the glass substrates consist of a TiFe phase. Crystallized Ti-Fe thin films without oxides were successfully obtained. Surface roughness of the thin film was 0.16 m m.

Heteroepitaxial Growth of Epitaxial C60-Thin Films on Mica(001)

1994 ◽  
Vol 359 ◽  
Author(s):  
S. Henke ◽  
K.H. Thürer ◽  
S. Geier ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

ABSTRACTOn mica(001) thin C60-films are deposited by thermal evaporation at substrate temperatures from room temperature up to 225°C. The dependence of the structure and the epitaxial alignment of the thin C60-films on mica(001) on the substrate temperature and the film thickness up to 1.3 μm at a well-defined deposition rate (0.008 nm/s) is investigated by atomic force microscopy and X-ray diffraction. The shape and the size of the C60-islands, which have an influence on the film quality at larger film thicknesses, are sensitively dependent on the substrate temperature. At a film thickness of 200 nm the increase of the substrate temperature up to 225°C leads to smooth, completely coalesced epitaxial C60-thin films characterized by a roughness smaller than 1.5 nm, a mosaic spread Δω of 0.1° and an azimuthal alignment ΔΦ of 0.45°.

Growth of highly oriented La0.84Sr0.16MnO3 perovskite films

1995 ◽  
Vol 10 (10) ◽  
pp. 2518-2522 ◽  
Author(s):  
Brandon W. Chung ◽  
Eric L. Brosha ◽  
Fernando H. Garzon ◽  
Ian D. Raistrick ◽  
Robert J. Houlton ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Rf Magnetron Sputtering ◽  
Scanning Tunneling ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
Tunneling Microscopy ◽  
Sputtering Deposition ◽  
X Ray ◽  
Deposited Films

We have grown thin films of La0.84Sr0.16MnO3 on SrTiO3 (100), MgO (100), CeO2 (100)/Al2O3, and (100) oriented yttria-stabilized zirconia (YSZ) substrates by using a 90°off-axis RF magnetron sputtering deposition. X-ray diffraction analysis and ion beam channeling experiments reveal that the deposited films grow epitaxially on SrTiO3, biaxially textured on MgO, and highly textured on YSZ. Scanning tunneling microscopy reveals that the thin films possess extremely smooth surfaces.

Superconducting Mbtallic Supkrlattices

1986 ◽  
Vol 77 ◽  
Author(s):  
Charles M. Falco ◽  
Ruggero Vaglio ◽  
Annamaria Cucolo
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
London Penetration Depth ◽  
X Ray Diffraction ◽  
Josephson Tunneling ◽  
X Ray ◽  
Analysis Techniques ◽  
Beam Analysis ◽  
Superlattice Layer

ABSTRACTSince the coherence length is of order 50 Å to 1 μm, it is possible to alternately layer thin films of a superconductor with another material to affect the physical properties of the resulting superlattice. A brief description of our sputtering technique used to prepare superlat t ices consisting of Nb/Cu and Ta/Mo is given. Optical interferometry, x-ray diffraction and ion beam analysis techniques independently confirm that control of ±0.3% is achieved over the amount of material deposited in each layer. Results of a study of Josephson tunneling to Nb/Cu metallic super lattices are reviewed. These measurements enable a determination of the London penetration depth to be made as a function of superlattice layer thickness.

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