3C–SiC/Si/3C–SiC epitaxial trilayer films deposited on Si(111) substrates by reactive magnetron sputtering

1995 ◽  
Vol 10 (6) ◽  
pp. 1349-1351 ◽  
Author(s):  
Q. Wahab ◽  
L. Hultman ◽  
I.P. Ivanov ◽  
M. Willander ◽  
J-E. Sundgren
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Magnetron Sputtering ◽  
Layered Structure ◽  
Stacking Faults ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Cross Sectional ◽  
Epitaxial Structure ◽  
Transmission Electron

A trilayer epitaxial structure of 3C-SiC/Si/3C-SiC was grown on Si(111) substrate by reactive magnetron sputtering. The layered structure consisted of a 300 nm thick Si layer sandwiched between two 250 nm thick 3C-SiC layers. Cross-sectional transmission electron microscopy (XTEM) showed that all layers were epitaxial to each other. The 3C-SiC layers contained stacking faults and double positioning domains with a high density in the second SiC layer. The Si layer showed the lowest density of planar faults, but developed growth facets. Observation was made of stacking faults propagating from 3C-SiC to Si layer as well as stacking faults originating at the termination of 3C-SiC double positioning boundaries into Si. The termination of Si stacking faults during growth of SiC is also reported.

Properties of MOS Structure Fabricated on 3C-SiC Grown by Reactive Magnetron Sputtering.

1994 ◽  
Vol 339 ◽  
Author(s):  
R. Turan ◽  
Q. Wahab ◽  
L. Hultman ◽  
M. Willander ◽  
J. -E. Sundgren
Keyword(s):  
Magnetron Sputtering ◽  
Interface State ◽  
State Density ◽  
Reactive Magnetron Sputtering ◽  
Oxide Semiconductor ◽  
Reactive Magnetron ◽  
Cross Sectional ◽  
Mos Structure ◽  
Transmission Electron ◽  
Wide Bandgap Materials

ABSTRACTWe report the fabrication and the characterization of Metal Oxide Semiconductor (MOS) structure fabricated on thermally oxidized 3C-SiC grown by reactive magnetron sputtering. The structure and the composition of the SiO2 layer was studied by cross-sectional transmission electron microscopy (XTEM) Auger electron spectroscopy (AES). Homogeneous stoichiometric SiO2 layers formed with a well-defined interface to the faceted SiC(lll) top surface. Electrical properties of the MOS capacitor have been analyzed by employing the capacitance and conductance techniques. C-V curves shows the accumulation, depletion and deep depletion phases. The capacitance in the inversion regime is not saturated, as usually observed for wide-bandgap materials. The unintentional doping concentration determined from the 1/C2 curve was found to be as low as 2.8 × 1015 cm-3. The density of positive charges in the grown oxide and the interface states have been extracted by using high-frequency C-V and conductance techniques. The interface state density has been found to be in the order of 1011cm2-eV-1.

High Resolution Transmission Electron Microscopy of Proton Implanted Gallium Arsenide

1985 ◽  
Vol 46 ◽  
Author(s):  
D. K. Sadana ◽  
J. M. Zavada ◽  
H. A. Jenkinson ◽  
T. Sands
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Phenomenological Model ◽  
Room Temperature ◽  
Stacking Faults ◽  
High Dose ◽  
Cross Sectional ◽  
Projected Range ◽  
Transmission Electron

AbstractHigh resolution transmission electron microscopy (HRTEM) has been performed on cross-sectional specimens from high dose (1016 cm−2) H+ implanted (100) GaAs (300 keV at room temperature). It was found that annealing at 500°C created small (20-50Å) loops on {111} near the projected range (Rp)(3.2 μm). At 550-600°C, voids surrounded by stacking faults, microtwins and perfect dislocations were observed near the Rp. A phenomenological model explaining the observed results is proposed.

Mg–Ti–spinel formation by interfacial solid-state reaction at the TiN/MgO interface

1989 ◽  
Vol 4 (5) ◽  
pp. 1266-1271 ◽  
Author(s):  
L. Hultman ◽  
J-E. Sundgren ◽  
D. Hesse
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Reactive Magnetron ◽  
Cross Sectional ◽  
Tin Films ◽  
Spinel Formation ◽  
Transmission Electron ◽  
Spinel Composition ◽  
Substrate Temperatures

Mg–Ti–spinel formation has been observed by cross-sectional transmission electron microscopy at the interface of TiN(100) films and MgO(100) substrates for films grown at substrate temperatures higher than 800 °C and for samples post-annealed at 850 °C. The TiN films were deposited by reactive magnetron sputtering onto cleaved (100)-oriented MgO substrates. The spinel formed 5 nm epitaxial layers along the interface with occasional (111) wedges growing into the MgO. The orientational relationships were found to be TiN(100)|spinel(100)|MgO(100) and TiN[001]|spinel[001]|MgO[001]. The spinel composition is suggested to be Mg2TiO4.

Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi Wafers

2020 ◽  
Vol 1004 ◽  
pp. 421-426
Author(s):  
Hideki Sako ◽  
Kentaro Ohira ◽  
Kenji Kobayashi ◽  
Toshiyuki Isshiki
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stacking Faults ◽  
Wafer Surface ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
The Difference

Two types of carrot defects with and without a shallow pit were found by mirror projection electron microscopy (MPJ) inspection in 4H-SiC epi wafer. Surface morphology and cross-sectional structure of prismatic stacking faults (PSFs) were investigated using MPJ and atomic force microscopy (AFM), transmission electron microscopy (TEM) and high-resolution scanning transmission electron microscopy (STEM). The depths of the surface grooves due to the PSFs, the stacking sequences around the PSFs and the structure of the Frank-type stacking faults which were connected to the PSFs were different. We discuss the difference between the two types of carrot defects.

Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering

1996 ◽  
Vol 11 (10) ◽  
pp. 2458-2462 ◽  
Author(s):  
L. Hultman ◽  
H. Ljungcrantz ◽  
C. Hallin ◽  
E. Janzén ◽  
J-E. Sundgren ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Specific Contact Resistance ◽  
Room Temperature Resistivity ◽  
Reactive Magnetron ◽  
Cross Sectional ◽  
Tin Films ◽  
Transmission Electron ◽  
Specific Contact ◽  
Tin Thin Films

Epitaxial TiN films were grown on cubic (3C)-SiC(001) and hexagonal (6H)-SiC(0001) substrates by ultrahigh vacuum reactive magnetron sputtering from a Ti target in a mixed Ar and N2 discharge at a substrate temperature of 700 °C. Cross-sectional transmission electron microscopy, including high-resolution imaging, showed orientational relationships TiN(001)‖3C-SiC(001), and TiN[110]‖3C-SiC[110], and TiN(111)‖6H-SiC(0001) and . In the latter case, twin-related TiN domains formed as the result of nucleation on SiC terraces with an inequivalent stacking sequence of Si and C. The TiN/SiC interface was locally atomically sharp for both SiC polytypes. Defects in the TiN layers consisted of threading double positioning domain boundaries in TiN(111) on 6H-SiC. Stacking faults in 3C-SiC did not propagate upon growth of TiN. Room-temperature resistivity of TiN films was ρ = 14 μΩ cm for 6H-SiC(0001) and ρ = 17 μΩ cm for 3C-SiC(001) substrates. Specific contact resistance of TiN to 6H-SiC(0001) was 1.3 3 10−3 Ω cm2 for a 6H-SiC substrate with an n-type doping of 5 × 1017 cm−3.

scholarly journals The Microstructural Evolution of Nanometer Ruthenium Films in Ru/C Multilayers With Thermal Treatments

1991 ◽  
Vol 230 ◽  
Author(s):  
Tai D. Nguyen ◽  
Ronald Gronsky ◽  
Jeffrey B. Kortright
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Size ◽  
Microstructural Evolution ◽  
Layered Structure ◽  
Structure Stability ◽  
Thermal Treatments ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron

AbstractThe evolution of nanometer Ru films sandwiched between various C layer thicknesses with thermal treatments was studied by plan-view and cross-sectional Transmission Electron Microscopy. Plan-view observation provides information on the Ru grain size, while crosssectional studies allow examination of the multilayer morphology. After annealing at 800°C for 30 minutes, the grain size in the 2 and 4 nm Ru layers show little difference from each other, while that in the I nm Ru layers depends strongly on the thickness of the C layers in the multilayers. It increases with decreasing C layer thickness. Agglomeration of the Ru layers is observed in Inmn Ru / 1nm C multilayers after annealing at 600°C for 30 minutes. The evolution of the microstructures and layered structure stability of the Ru/C system is compared to that of W/C and Ru/B4C systems.

Growth and Characterization of Well-Aligned RuO2/R-TiO2 Heteronanostructures on Sapphire (100) Substrates by Reactive Magnetron Sputtering

2011 ◽  
Vol 170 ◽  
pp. 78-82
Author(s):  
Hung Pin Hsu ◽  
Ying Sheng Huang ◽  
Chien Nan Yeh ◽  
Yi Min Chen ◽  
Dah Shyang Tsai ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Vertically Aligned ◽  
Xrd Patterns ◽  
Electron Diffractometry

We report the growth of well-aligned RuO2/R-TiO2 heteronanostructures on sapphire (100) substrates by reactive magnetron sputtering using Ti and Ru metal targets under different conditions. The surface morphology and structural properties of the as-deposited heteronanostructures were characterized using field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and selected-area electron diffractometry (SAED). The FESEM micrographs and XRD patterns indicated the growth of vertically aligned RuO2(001) nanotubes and twinned V-shaped RuO2(101) nanowedges (NWs) on top of R-TiO2 nanorods under different sputtering pressures. TEM and SAED characterizations of the V-shaped RuO2 NWs showed that the NWs are crystalline RuO2 with twin planes of (101) and twin direction of [ 01] at the V-junction.

Microstructure of laser-irradiated, conducting Kapton polyimide

1995 ◽  
Vol 53 ◽  
pp. 502-503
Author(s):  
D. L. Callahan ◽  
Z. Ball ◽  
H. M. Phillips ◽  
R. Sauerbrey
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Cross Sectional ◽  
General Utility ◽  
Transmission Electron ◽  
Considerable Debate ◽  
Potential Applications

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.

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