Development of flat, smooth (100) faceted diamond thin films using microwave plasma chemical vapor deposition

1997 ◽  
Vol 12 (7) ◽  
pp. 1796-1805 ◽  
Author(s):  
Andrew L. Yee ◽  
H. C. Ong ◽  
L. M. Stewart ◽  
R. P. H. Chang
Keyword(s):  
Microwave Plasma ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Growth Conditions ◽  
Fiber Texture ◽  
Spiral Growth ◽  
Carbon Phase ◽  
Growth Step ◽  
Plasma Chemical Vapor Deposition ◽  
Novel Approach

A novel approach has been used to develop (100) faceted diamond films with flat, smooth surfaces. A morphological study of the early stages of growth behavior of (100) homoepitaxial films versus process temperature and methane percentage was carried out using atomic force microscopy. The results showed that spiral growth features and penetration twin density were dominant for growth conditions not well suited for (100) growth. Optimized process parameters were found to proceed via a step mechanism consistent with ledge growth on (2 × 1) reconstructed (100) diamond surfaces. These optimized conditions were then applied to growth of polycrystalline diamond on pretreated silicon substrates. A unique octahedral faceted film resulted, indicating strong preference for growth in the 〈100〉 direction. Scanning electron microscopy, x-ray diffraction, and Raman spectroscopy were used to assess film morphology, internal fiber texture, and carbon phase, respectively. A second stage growth step was used to flatten the surface topography to achieve the desired (100) flat tile-like morphology. This smooth (100) surface exhibited enhanced tribological performance compared to a typical randomly textured diamond film.

scholarly journals Microstructures Manufactured in Diamond by Use of Laser Micromachining

Materials ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1199
Author(s):  
Mariusz Dudek ◽  
Adam Rosowski ◽  
Marcin Kozanecki ◽  
Malwina Jaszczak ◽  
Witold Szymański ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Raman Spectra ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Scanning System ◽  
Carbon Phase ◽  
Diamond Plate ◽  
Diode Pumped

Different microstructures were created on the surface of a polycrystalline diamond plate (obtained by microwave plasma-enhanced chemical vapor deposition—MW PECVD process) by use of a nanosecond pulsed DPSS (diode pumped solid state) laser with a 355 nm wavelength and a galvanometer scanning system. Different average powers (5 to 11 W), scanning speeds (50 to 400 mm/s) and scan line spacings (“hatch spacing”) (5 to 20 µm) were applied. The microstructures were then examined using scanning electron microscopy, confocal microscopy and Raman spectroscopy techniques. Microstructures exhibiting excellent geometry were obtained. The precise geometries of the microstructures, exhibiting good perpendicularity, deep channels and smooth surfaces show that the laser microprocessing can be applied in manufacturing diamond microfluidic devices. Raman spectra show small differences depending on the process parameters used. In some cases, the diamond band (at 1332 cm−1) after laser modification of material is only slightly wider and shifted, but with no additional peaks, indicating that the diamond is almost not changed after laser interaction. Some parameters did show that the modification of material had occurred and additional peaks in Raman spectra (typical for low-quality chemical vapor deposition CVD diamond) appeared, indicating the growing disorder of material or manufacturing of the new carbon phase.

scholarly journals Phosphorous Doping of Microcrystalline CVD Diamond Using Modified Conditions

2007 ◽  
Vol 1039 ◽  
Author(s):  
Ken Haenen ◽  
Andrada Lazea ◽  
Vincent Mortet ◽  
Jan D'Haen ◽  
Peter Geithner ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Cvd Diamond ◽  
Growth Conditions ◽  
Diamond Surfaces ◽  
Cvd Growth ◽  
Oriented Polycrystalline ◽  
Electron Back Scattered Diffraction

AbstractPhosphorous-doping of predominantly (110) oriented polycrystalline CVD diamond films is presented. Incorporation of phosphorous into the diamond grains was accomplished by using novel microwave plasma enhanced chemical vapor deposition (MW PE CVD) growth conditions. The substitutional nature of the phosphorous atom was confirmed by applying the quasi-steady-state photocurrent technique (PC) and cathodoluminescence (CL) measurements at low temperature. Topographical information and the relation between substrate and P-doped film grain orientation was obtained with scanning electron microscopy (SEM) and electron back-scattered diffraction (EBSD). The optimized growth parameters for P-doped layers on (110) oriented polycrystalline diamond differ substantially from the standard conditions reported in literature for P-doping of single crystalline (111) and (100) oriented diamond surfaces.

High Resolution Tem Study of Diamond Formation on Silicon and Molybdenum Field Emitter Surfaces

1994 ◽  
Vol 354 ◽  
Author(s):  
A. F. Myers ◽  
J. Liu ◽  
W. B. Choi ◽  
G. J. Wojak ◽  
J. J. Hren
Keyword(s):  
High Resolution ◽  
Diamond Film ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Plasma Chemical Vapor Deposition ◽  
Field Emitters ◽  
High Resolution Tem ◽  
Diffraction Patterns ◽  
Polycrystalline Diamond Film

AbstractDiamond is an attractive material for coating microfabricated metal and semiconductor field emitters, since it enhances the stability and emission characteristics of the emitter. In the present study, polycrystalline diamond thin films were grown on silicon and molybdenum field emitters by microwave plasma chemical vapor deposition, using the bias-enhanced nucleation technique. High resolution transmission electron microscopy (TEM) was used to analyze the morphology of the diamond film and the structure of the diamond/emitter interface. Electron diffraction patterns and high resolution images indicate the presence of a polycrystalline diamond film, as well as a polycrystalline SiC layer between the diamond film and the Si emitter. A carbide interlayer was also found to exist between the diamond and the Mo emitter surface. Parallel electron energy loss spectroscopy confirms the TEM identification of a polycrystalline diamond film.

Electrical Properties of Hydrogen Terminated P-Type Diamond Film

2010 ◽  
Vol 663-665 ◽  
pp. 625-628
Author(s):  
Fu Yuan Xia ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Ke Tang ◽  
Ji Jun Zhang ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
P Type ◽  
Effect Method

Undoped high quality polycrystalline diamond films were grown by the microwave plasma chemical vapor deposition (MPCVD) method. The effects of hydrogen plasma treatment and vacuum annealing process on the p-type behavior of diamond films were investigated by the Hall effect method. The sheet carrier concentration increased and the sheet resistivity decreased with the treating time of hydrogen plasma and a stable value was achieved finally. After annealing the samples in vacuum at temperature above 600 °C, the sheet carrier concentration dropped dramatically. The origin of this hydrogen terminated p-type conductive layers is also discussed.

Preparation and Characteristics of Nanocrystalline Diamond Film by Using of MPVCD

2011 ◽  
Vol 304 ◽  
pp. 1-5
Author(s):  
Bao Hua Yang ◽  
Hua Li Ma ◽  
Hong Yan Lu ◽  
Xiao Bo Zhang
Keyword(s):  
Microwave Plasma ◽  
Particle Diameter ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Carbon Phase ◽  
Crystal Silicon ◽  
Plasma Chemical Vapor Deposition ◽  
Laser Raman ◽  
Laser Raman Spectra ◽  
Single Crystal Silicon Substrate

With the microwave plasma chemical vapor deposition (MPCVD), the effects of the deposition pressure and the different substrate temperature on diamond coating on single crystal silicon substrate were studied systemically. The sample was characterized by means of scanning electron microscopy (SEM) and laser Raman spectra (Raman). The experimental results showed that the surface of the film was compact, the mean particle diameter was 98nm, and that it contains thesp3carbon phase with good quality.

Diamond Coated WC Tools for Machining Wood and Particle Board

2001 ◽  
Vol 697 ◽  
Author(s):  
Raghuveer S. Makala ◽  
S.N. Yoganand ◽  
K. Jagannadham ◽  
R.L. Lemaster ◽  
J. Bailey
Keyword(s):  
Contact Area ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Cutting Edge ◽  
Particle Board ◽  
Essential Factor ◽  
Plasma Chemical Vapor Deposition ◽  
Coated Tools ◽  
Film Adhesion

AbstractDiamond coating was provided to improve the performance of WC-Co tools used in machining wood and particle board. Microwave plasma chemical vapor deposition was used to deposit diamond using a gas mixture with CH4: H2 in the ratio 0.5: 100 at a temperature of 900°C. The microwave energy was set at 900W and a pressure of 35Torr was maintained in the chamber. An essential factor that determines the life of polycrystalline diamond coated tools is poor film adhesion. To counter this problem, we have developed a process that includes etching away cobalt from surface regions, treatment with H2 plasma and use of TiN/ TiC intermediate and embedding layers. The TiN/ TiC layers were deposited by reactive magnetron sputtering. These layers embed diamond crystallites and improve adhesion, and in addition act as good diffusion barriers for Co. The diamond coated and uncoated tools have been characterized in the as deposited conditions and after prescribed wear by machining particle board using SEM and X-ray mapping. It was also found that the limited contact area with diamond on the cutting edge affects the adhesion of the coating. Improvement in contact area by providing a larger radius to the cutting edge is discussed.

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