scholarly journals Phosphorous Doping of Microcrystalline CVD Diamond Using Modified Conditions

2007 ◽  
Vol 1039 ◽  
Author(s):  
Ken Haenen ◽  
Andrada Lazea ◽  
Vincent Mortet ◽  
Jan D'Haen ◽  
Peter Geithner ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Cvd Diamond ◽  
Growth Conditions ◽  
Diamond Surfaces ◽  
Cvd Growth ◽  
Oriented Polycrystalline ◽  
Electron Back Scattered Diffraction

AbstractPhosphorous-doping of predominantly (110) oriented polycrystalline CVD diamond films is presented. Incorporation of phosphorous into the diamond grains was accomplished by using novel microwave plasma enhanced chemical vapor deposition (MW PE CVD) growth conditions. The substitutional nature of the phosphorous atom was confirmed by applying the quasi-steady-state photocurrent technique (PC) and cathodoluminescence (CL) measurements at low temperature. Topographical information and the relation between substrate and P-doped film grain orientation was obtained with scanning electron microscopy (SEM) and electron back-scattered diffraction (EBSD). The optimized growth parameters for P-doped layers on (110) oriented polycrystalline diamond differ substantially from the standard conditions reported in literature for P-doping of single crystalline (111) and (100) oriented diamond surfaces.

Crystalline perfection of chemical vapor deposited diamond films

1990 ◽  
Vol 5 (8) ◽  
pp. 1591-1594 ◽  
Author(s):  
A. V. Hetherington ◽  
C. J. H. Wort ◽  
P. Southworth
Keyword(s):  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Growth Conditions ◽  
Crystalline Perfection ◽  
Planar Defects ◽  
Chemical Vapor Deposited

The crystalline perfection of microwave plasma assisted chemical vapor deposited (MPACVD) diamond films grown under various conditions has been examined by TEM. Most CVD diamond films thus far reported contain a high density of defects, predominantly twins and stacking faults on {111} planes. We show that under appropriate growth conditions, these planar defects are eliminated from the center of the crystallites, and occur only at grain boundaries where the growing crystallites meet.

scholarly journals Isotope Effect in Thermal Conductivity of Polycrystalline CVD-Diamond: Experiment and Theory

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 322
Author(s):  
Alexander V. Inyushkin ◽  
Alexander N. Taldenkov ◽  
Victor G. Ralchenko ◽  
Andrey P. Bolshakov ◽  
Alexander V. Khomich
Keyword(s):  
Thermal Conductivity ◽  
Chemical Vapor Deposition ◽  
Isotopic Composition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Cvd Diamond ◽  
Plasma Chemical Vapor Deposition

We measured the thermal conductivity κ(T) of polycrystalline diamond with natural (natC) and isotopically enriched (12C content up to 99.96 at.%) compositions over a broad temperature T range, from 5 to 410 K. The high quality polycrystalline diamond wafers were produced by microwave plasma chemical vapor deposition in CH4-H2 mixtures. The thermal conductivity of 12C diamond along the wafer, as precisely determined using a steady-state longitudinal heat flow method, exceeds much that of the natC sample at T>60 K. The enriched sample demonstrates the value of κ(298K)=25.1±0.5 W cm−1 K−1 that is higher than the ever reported conductivity of natural and synthetic single crystalline diamonds with natural isotopic composition. A phenomenological theoretical model based on the full version of Callaway theory of thermal conductivity is developed which provides a good approximation of the experimental data. The role of different resistive scattering processes, including due to minor isotope 13C atoms, defects, and grain boundaries, is estimated from the data analysis. The model predicts about a 37% increase of thermal conductivity for impurity and dislocation free polycrystalline chemical vapor deposition (CVD)-diamond with the 12C-enriched isotopic composition at room temperature.

Development of flat, smooth (100) faceted diamond thin films using microwave plasma chemical vapor deposition

1997 ◽  
Vol 12 (7) ◽  
pp. 1796-1805 ◽  
Author(s):  
Andrew L. Yee ◽  
H. C. Ong ◽  
L. M. Stewart ◽  
R. P. H. Chang
Keyword(s):  
Microwave Plasma ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Growth Conditions ◽  
Fiber Texture ◽  
Spiral Growth ◽  
Carbon Phase ◽  
Growth Step ◽  
Plasma Chemical Vapor Deposition ◽  
Novel Approach

A novel approach has been used to develop (100) faceted diamond films with flat, smooth surfaces. A morphological study of the early stages of growth behavior of (100) homoepitaxial films versus process temperature and methane percentage was carried out using atomic force microscopy. The results showed that spiral growth features and penetration twin density were dominant for growth conditions not well suited for (100) growth. Optimized process parameters were found to proceed via a step mechanism consistent with ledge growth on (2 × 1) reconstructed (100) diamond surfaces. These optimized conditions were then applied to growth of polycrystalline diamond on pretreated silicon substrates. A unique octahedral faceted film resulted, indicating strong preference for growth in the 〈100〉 direction. Scanning electron microscopy, x-ray diffraction, and Raman spectroscopy were used to assess film morphology, internal fiber texture, and carbon phase, respectively. A second stage growth step was used to flatten the surface topography to achieve the desired (100) flat tile-like morphology. This smooth (100) surface exhibited enhanced tribological performance compared to a typical randomly textured diamond film.

Chemical Vapor Deposition of Beta Silicon Carbide Epilayers Using the Single Source Precursor 1,2-Disilylethane

1992 ◽  
Vol 282 ◽  
Author(s):  
J. D. Parsons ◽  
D. A. Roberts ◽  
J. G. Wu ◽  
A. K. Chadda ◽  
H-S. Chen ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Atmospheric Pressure ◽  
Epitaxial Film ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Nucleation And Growth ◽  
Film Properties ◽  
Single Source Precursor ◽  
Cvd Growth

ABSTRACTA β-SiC epitaxial growth process, using 1,2-disilylethane (DES), was developed. DSE was selected because it contains an equal number of C and Si atoms and its reported decomposition characteristics suggest that C and Si could be obtained from it at approximately equal rates. Repeatable nucleation and epitaxial growth conditions, giving complete substrate coverage and controlled growth, were established by atmospheric pressure CVD, in an inverted-vertical reactor. A substrate temperature of 1290± 10°C was found to be optimum for β-SiC epilayer nucleation and growth. The maximum β-SiC epitaxial growth rate obtained was 10μms/hr. Undoped β-SiC epilayers were n-type (n≈1016 cm−3 ). DSE synthesis, CVD growth parameters, SiC deposition characteristics and β-SiC epitaxial film properties are described.

A Comparative Study of Nucleation Enhancement Techniques for Plasma Cvd of Diamond Thin Films

1994 ◽  
Vol 349 ◽  
Author(s):  
R.J. Meilunas ◽  
A. Tobin
Keyword(s):  
Thin Film ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Processing Parameters ◽  
Carbon Cluster ◽  
Nucleation Density ◽  
Plasma Cvd ◽  
Diamond Nucleation ◽  
Diamond Surfaces ◽  
Dc Biasing

ABSTRACTThree methods recently proposed for enhancing the nucleation density of thin film diamond on non-diamond surfaces during microwave plasma assisted chemical vapor deposition are investigated. The results of a series of nucleation and growth studies utilizing a dc biasing technique, carbon cluster (C70) thin film overlayers, and thin film metal (Fe) overlayers for diamond nucleation enhancement are presented. The influence of the substrate and plasma processing parameters under which the above nucleation enhancement effects occur has been determined for the three respective techniques.

scholarly journals Исследование нелегированных нанокристаллических алмазных пленок, выращенных из газовой фазы в плазме СВЧ разряда

2021 ◽  
Vol 55 (1) ◽  
pp. 49
Author(s):  
А.Л. Вихарев ◽  
С.А. Богданов ◽  
Н.М. Овечкин ◽  
О.А. Иванов ◽  
Д.Б. Радищев ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Inert Gas ◽  
Dielectric Films ◽  
High Temperature Annealing ◽  
Structural And Electrical Properties ◽  
Methane Mixture

Undoped nanocrystalline diamond (NCD) films less than 1 μm thick grown on Si (100) silicon by microwave plasma-assisted chemical vapor deposition at a frequency of 2.45 GHz are studied. To obtain diamond dielectric films with maximum resistivity the deposition of films in three gas mixtures is investigated: hydrogen-methane mixture, hydrogen-methane mixture with the addition of oxygen and hydrogen-methane mixture with the addition of an inert gas. A relationship has been established between the growth conditions, structural and electrical properties of NCD films. It is shown that for the use of NCD films as effective dielectrics preliminary high-temperature annealing of the films is required, for example, in vacuum at a temperature of 600°C for one hour.

scholarly journals Microstructures Manufactured in Diamond by Use of Laser Micromachining

Materials ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1199
Author(s):  
Mariusz Dudek ◽  
Adam Rosowski ◽  
Marcin Kozanecki ◽  
Malwina Jaszczak ◽  
Witold Szymański ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Raman Spectra ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Scanning System ◽  
Carbon Phase ◽  
Diamond Plate ◽  
Diode Pumped

Different microstructures were created on the surface of a polycrystalline diamond plate (obtained by microwave plasma-enhanced chemical vapor deposition—MW PECVD process) by use of a nanosecond pulsed DPSS (diode pumped solid state) laser with a 355 nm wavelength and a galvanometer scanning system. Different average powers (5 to 11 W), scanning speeds (50 to 400 mm/s) and scan line spacings (“hatch spacing”) (5 to 20 µm) were applied. The microstructures were then examined using scanning electron microscopy, confocal microscopy and Raman spectroscopy techniques. Microstructures exhibiting excellent geometry were obtained. The precise geometries of the microstructures, exhibiting good perpendicularity, deep channels and smooth surfaces show that the laser microprocessing can be applied in manufacturing diamond microfluidic devices. Raman spectra show small differences depending on the process parameters used. In some cases, the diamond band (at 1332 cm−1) after laser modification of material is only slightly wider and shifted, but with no additional peaks, indicating that the diamond is almost not changed after laser interaction. Some parameters did show that the modification of material had occurred and additional peaks in Raman spectra (typical for low-quality chemical vapor deposition CVD diamond) appeared, indicating the growing disorder of material or manufacturing of the new carbon phase.

Selective and low temperature synthesis of polycrystalline diamond

1991 ◽  
Vol 6 (6) ◽  
pp. 1278-1286 ◽  
Author(s):  
R. Ramesham ◽  
T. Roppel ◽  
C. Ellis ◽  
D.A. Jaworske ◽  
W. Baugh
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Microwave Plasma ◽  
Diamond Particle ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Crystal Silicon ◽  
Diamond Thin Films

Polycrystalline diamond thin films have been deposited on single crystal silicon substrates at low temperatures (⋚ 600 °C) using a mixture of hydrogen and methane gases by high pressure microwave plasma-assisted chemical vapor deposition. Low temperature deposition has been achieved by cooling the substrate holder with nitrogen gas. For deposition at reduced substrate temperature, it has been found that nucleation of diamond will not occur unless the methane/hydrogen ratio is increased significantly from its value at higher substrate temperature. Selective deposition of polycrystalline diamond thin films has been achieved at 600 °C. Decrease in the diamond particle size and growth rate and an increase in surface smoothness have been observed with decreasing substrate temperature during the growth of thin films. As-deposited films are identified by Raman spectroscopy, and the morphology is analyzed by scanning electron microscopy.

CVD Diamond as Dielectric Material for Capacitor Applications

1998 ◽  
Vol 512 ◽  
Author(s):  
S. Heidger ◽  
S. Fries-Carr ◽  
J. Weimer ◽  
B. Jordan ◽  
R. Wu
Keyword(s):  
Dielectric Constant ◽  
Loss Tangent ◽  
Microwave Plasma ◽  
Dielectric Material ◽  
Chemical Vapor ◽  
Temperature Stability ◽  
Cvd Diamond ◽  
Dielectric Constants ◽  
Plasma Chemical Vapor Deposition ◽  
Deposition Parameters

ABSTRACTDiamond films synthesized using Microwave Plasma Chemical Vapor Deposition (MWCVD) were evaluated for use as dielectric material for high power and high temperature capacitors. The effect that the deposition parameters and annealing have on the frequency and temperature stability of the electronic properties was investigated. Dielectric constants ranging between 8.0 and 4.2 and resistivities between 1× 108 ohm-cm and 5×1014 ohm-cm were obtained. Diamond produced using less than 6.6% methane had very stable dielectric constants over the frequency range of 100 Hz to IMHz, and the loss tangent was less than 0.01. Adding oxygen to the precursor gas increased the dielectric constant and lowered the loss tangent of CVD diamond, but the resistivity was also lowered. As the temperature increased to 300°C, the dielectric constant and loss tangent increased. However, when diamond was annealed to 700°C, there was less than a 5% change in the dielectric constant from 23°C to 300°C.

High Resolution Tem Study of Diamond Formation on Silicon and Molybdenum Field Emitter Surfaces

1994 ◽  
Vol 354 ◽  
Author(s):  
A. F. Myers ◽  
J. Liu ◽  
W. B. Choi ◽  
G. J. Wojak ◽  
J. J. Hren
Keyword(s):  
High Resolution ◽  
Diamond Film ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Plasma Chemical Vapor Deposition ◽  
Field Emitters ◽  
High Resolution Tem ◽  
Diffraction Patterns ◽  
Polycrystalline Diamond Film

AbstractDiamond is an attractive material for coating microfabricated metal and semiconductor field emitters, since it enhances the stability and emission characteristics of the emitter. In the present study, polycrystalline diamond thin films were grown on silicon and molybdenum field emitters by microwave plasma chemical vapor deposition, using the bias-enhanced nucleation technique. High resolution transmission electron microscopy (TEM) was used to analyze the morphology of the diamond film and the structure of the diamond/emitter interface. Electron diffraction patterns and high resolution images indicate the presence of a polycrystalline diamond film, as well as a polycrystalline SiC layer between the diamond film and the Si emitter. A carbide interlayer was also found to exist between the diamond and the Mo emitter surface. Parallel electron energy loss spectroscopy confirms the TEM identification of a polycrystalline diamond film.

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