Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy

1998 ◽  
Vol 13 (7) ◽  
pp. 1816-1822 ◽  
Author(s):  
R. S. Kern ◽  
L. B. Rowland ◽  
S. Tanaka ◽  
R. F. Davis
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Silicon Carbide ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Solid Solutions ◽  
Molecular Beam ◽  
High Energy ◽  
Gas Source ◽  
Electron Spectrometry

Solid solutions of aluminum nitride (AlN) and silicon carbide (SiC) have been grown at 900–1300 °C on vicinal α (6H)-SiC(0001) substrates by plasma-assisted, gas-source molecular beam epitaxy. Under specific processing conditions, films of (AlN)x(SiC) 1−x with 0.2 ≤ x ≤ 0.8, as determined by Auger electron spectrometry (AES), were deposited. Reflection high-energy electron diffraction (RHEED) was used to determine the crystalline quality, surface character, and epilayer polytype. Analysis of the resulting surfaces was also performed by scanning electron microscopy (SEM). High-resolution transmission electron microscopy (HRTEM) revealed that monocrystalline films with x ≥ 0.25 had the wurtzite (2H) crystal structure; however, films with x < 0.25 had the zincblende (3C) crystal structure.

Solid solutions of AlN and SiC grown by plasma-assisted, gas-source molecular beam epitaxy

1993 ◽  
Vol 8 (7) ◽  
pp. 1477-1480 ◽  
Author(s):  
R.S. Kern ◽  
L.B. Rowland ◽  
S. Tanaka ◽  
R.F. Davis
Keyword(s):  
Crystal Structure ◽  
Molecular Beam Epitaxy ◽  
Solid Solutions ◽  
Molecular Beam ◽  
Binary Systems ◽  
Gas Source ◽  
Intermediate Phases ◽  
Transmission Electron ◽  
Auger Spectrometry ◽  
Approximate Composition

Solid solutions of aluminum nitride (AlN) and silicon carbide (SiC), the only intermediate phases in their respective binary systems, have been grown at 1050 °C on α(6H)-SiC(0001) substrates cut 3–4° off-axis toward [11$\overline 1$0] using plasma-assisted, gas-source molecular beam epitaxy. A film having the approximate composition of (AlN)0.3(SiC)0.7, as determined by Auger spectrometry, was selected for additional study and is the focus of this note. High resolution transmission electron microscopy (HRTEM) revealed that the film was monocrystalline with the wurtzite (2H) crystal structure.

Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma‐assisted, gas‐source molecular beam epitaxy

1993 ◽  
Vol 62 (25) ◽  
pp. 3333-3335 ◽  
Author(s):  
L. B. Rowland ◽  
R. S. Kern ◽  
S. Tanaka ◽  
Robert F. Davis
Keyword(s):  
Silicon Carbide ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Molecular Beam ◽  
Gas Source

Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy

Vacuum ◽  
1998 ◽  
Vol 49 (3) ◽  
pp. 189-191 ◽  
Author(s):  
K Järrendahl ◽  
SA Smith ◽  
T Zheleva ◽  
RS Kern ◽  
RF Davis
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Molecular Beam ◽  
Smooth Surfaces ◽  
Gas Source

Study of As and P Incorporation Behavior in GaAsP by Gas-Source Molecular-Beam Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Ex Situ ◽  
Limited Growth ◽  
Group V ◽  
Group Iii ◽  
Gas Source ◽  
Simple Kinetic Model

ABSTRACTA simple kinetic model has been developed to explain the agreement between in situ and ex situ determination of phosphorus composition in GaAs1−xPx (x < 0.4) epilayers grown on GaAs (001) by gas-source molecular-beam epitaxy (GSMBE). The in situ determination is by monitoring the intensity oscillations of reflection high-energy-electron diffraction during group-V-limited growth, and the ex situ determination is by x-ray rocking curve measurement of GaAs1−xPx/GaAs strained-layer superlattices grown under group-III-limited growth condition.

Reflection High-Energy-Electron Diffraction Study of Inp and InAs (100) In Gas-Source Molecular Beam Epitaxy

1990 ◽  
Vol 216 ◽  
Author(s):  
T. P. Chin ◽  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Electron Diffraction Study ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Group V ◽  
Precise Control ◽  
Gas Source

ABSTRACTInP and InAs (100) were grown by gas-source molecular-beam epitaxy (GSMBE) with arsine, phosphine, and elemental indium. Reflection high-energy-electron diffraction (RHEED) was used to monitor surface reconstructions and growth rates. (2×4) to (2×1) transition was observed on InP (100) as phosphine flow rate increased. (4×2) and (2×4) patterns were observed for In-stabilized and As-stabilized InAs surfaces, respectively. Both group-V and group-rn-induced RHEED oscillations were observed. The group-V surface desorption activation energy were measured to be 0.61 eV for InP and 0.19 eV for InAs. By this growth rate study, we are able to establish a precise control of V/HII atomic ratios in GSMBE of InP and InAs.

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