Solid solutions of AlN and SiC grown by plasma-assisted, gas-source molecular beam epitaxy

1993 ◽  
Vol 8 (7) ◽  
pp. 1477-1480 ◽  
Author(s):  
R.S. Kern ◽  
L.B. Rowland ◽  
S. Tanaka ◽  
R.F. Davis
Keyword(s):  
Crystal Structure ◽  
Molecular Beam Epitaxy ◽  
Solid Solutions ◽  
Molecular Beam ◽  
Binary Systems ◽  
Gas Source ◽  
Intermediate Phases ◽  
Transmission Electron ◽  
Auger Spectrometry ◽  
Approximate Composition

Solid solutions of aluminum nitride (AlN) and silicon carbide (SiC), the only intermediate phases in their respective binary systems, have been grown at 1050 °C on α(6H)-SiC(0001) substrates cut 3–4° off-axis toward [11$\overline 1$0] using plasma-assisted, gas-source molecular beam epitaxy. A film having the approximate composition of (AlN)0.3(SiC)0.7, as determined by Auger spectrometry, was selected for additional study and is the focus of this note. High resolution transmission electron microscopy (HRTEM) revealed that the film was monocrystalline with the wurtzite (2H) crystal structure.

Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy

1998 ◽  
Vol 13 (7) ◽  
pp. 1816-1822 ◽  
Author(s):  
R. S. Kern ◽  
L. B. Rowland ◽  
S. Tanaka ◽  
R. F. Davis
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Silicon Carbide ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Solid Solutions ◽  
Molecular Beam ◽  
High Energy ◽  
Gas Source ◽  
Electron Spectrometry

Solid solutions of aluminum nitride (AlN) and silicon carbide (SiC) have been grown at 900–1300 °C on vicinal α (6H)-SiC(0001) substrates by plasma-assisted, gas-source molecular beam epitaxy. Under specific processing conditions, films of (AlN)x(SiC) 1−x with 0.2 ≤ x ≤ 0.8, as determined by Auger electron spectrometry (AES), were deposited. Reflection high-energy electron diffraction (RHEED) was used to determine the crystalline quality, surface character, and epilayer polytype. Analysis of the resulting surfaces was also performed by scanning electron microscopy (SEM). High-resolution transmission electron microscopy (HRTEM) revealed that monocrystalline films with x ≥ 0.25 had the wurtzite (2H) crystal structure; however, films with x < 0.25 had the zincblende (3C) crystal structure.

Gas-source molecular beam epitaxy of monocrystalline β–SiC on vicinal α(6H)–SiC

1993 ◽  
Vol 8 (11) ◽  
pp. 2753-2756 ◽  
Author(s):  
L.B. Rowland ◽  
R.S. Kern ◽  
S. Tanaka ◽  
Robert F. Davis
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nucleation And Growth ◽  
Epitaxial Films ◽  
Gas Source ◽  
Transmission Electron ◽  
Surface Migration

Single-crystal epitaxial films of cubic β(3C)–SiC(111) have been deposited on hexagonal α(6H)–SiC(0001) substrates oriented 3–4° toward [1120] at 1050–1250 °C via gas-source molecular beam epitaxy using disilane (Si2H6) and ethylene (C2H4). High-resolution transmission electron microscopy revealed that the nucleation and growth of the β(3C)–SiC regions occurred primarily on terraces between closely spaced steps because of reduced rates of surface migration at the low growth temperatures. Double positioning boundaries were observed at the intersections of these regions.

Evidence for Instability in Pb1-x EuxTe Alloys

1987 ◽  
Vol 103 ◽  
Author(s):  
L. Salamanca-Young ◽  
M. Wuttig ◽  
D. L. Partin ◽  
J. Heremans
Keyword(s):  
Electron Microscopy ◽  
Solid Solution ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Spinodal Decomposition ◽  
Solid Solutions ◽  
Lattice Spacing ◽  
Molecular Beam ◽  
Transmission Electron ◽  
Modulated Structures

ABSTRACTWe have used transmission electron microscopy to study the structure of Pb1-xEuxTe alloys grown by molecular beam epitaxy. We have observed ordered solid solutions of the Pb1-x EuxTe alloys as well as spinodal decomposition for 0.35≤x<0.75. The spinodal decomposition corresponds to a modulation of both the composition and the lattice spacing of the Pb1-x EuxTe alloy. These modulated structures have periodicities of ∼18Å along the <111> and <110> directions and indicate that the solid solution of Pb1-x Eux Te is unstable in this range of compositions.

Growth of MgO by Metal-Organic Molecular Beam Epitaxy

1999 ◽  
Vol 606 ◽  
Author(s):  
Feng Niu ◽  
Brent.H. Hoerman ◽  
Bruce.W. Wessels
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Rf Plasma ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Auger Spectrometry ◽  
Metal Organic ◽  
Precursor Decomposition

AbstractMgO thin films were deposited on (100) Si substrates by metal-organic molecular beam epitaxy (MOMBE). Magnesium acetylacetonate was used as the precursor and an oxygen RF plasma was used as the oxidant. The films were characterized by a combination of transmission electron microscopy, Auger spectrometry and atomic force microscopy. Analyses indicate that the films directly deposited on Si substrates are stoichiometric, phase-pure, polycrystalline MgO with a [100] texture. Carbon contamination of the films resulting from precursor decomposition was not observed within detection limits. Furthermore, the growth rate of MgO has been systematically investigated as a function of growth temperature.

Growth of 3C-(Si1-xC1-y)Gex+y Layers on 4H-SiC by Molecular Beam Epitaxy

2005 ◽  
Vol 483-485 ◽  
pp. 173-176 ◽  
Author(s):  
Petia Weih ◽  
Henry Romanus ◽  
Thomas Stauden ◽  
Lothar Spieß ◽  
Oliver Ambacher ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Solid Solutions ◽  
Molecular Beam ◽  
Optimal Growth ◽  
Growth Conditions ◽  
Transmission Electron ◽  
Migration Enhanced Epitaxy ◽  
Different Temperatures ◽  
And Migration ◽  
Suitable Technique

In the present work cubic 3C-(Si1-xC1-y)Gex+y solid solutions were grown at different^temperatures by molecular beam epitaxy on on-axis 4H-SiC (0001) substrates. Two different growth methods are compared in order to explore the optimal growth conditions for the incorporation of Ge into the SiC lattice during the low temperature epitaxy. For this reason simultaneous growth and migration enhanced epitaxy were used. The chemical composition of the grown layers were analyzed by energy dispersive x-ray methods during transmission electron microscopy investigations. It was found that the migration enhanced epitaxy is a more suitable technique for the formation of high quality (Si1-xC1-y)Gex+y solid solutions. Additionally, polytypes transition from 4H-SiC to 3C-SiC occurs during the growth independent of the applied growth technique.

A Study of Low-Temperature Grown Gap by Gas-Source Molecular Beam Epitaxy

1996 ◽  
Vol 421 ◽  
Author(s):  
W. G. Bi ◽  
X. B. Mei ◽  
K. L. Kavanagh ◽  
C. W. Tu ◽  
E. A. Stach ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Flow Rate ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Cross Sectional ◽  
Rocking Curve ◽  
Gas Source ◽  
Transmission Electron ◽  
Lt Gaas

AbstractWe report the effects of growth conditions on the strain and crystalline quality of lowtemperature (LT) grown GaP films by gas-source molecular beam epitaxy. At temperatures below 160 °C, poly-crystalline GaP films are always obtained, regardless of the PH3 low rate used, while at temperatures above 160 °C, the material quality is affected by the PH3 flow rate. Contrary to compressively strained LT GaAs, high-resolution X-ray rocking curve measurement indicates a tensile strain of the LT GaP films, which is considered to be due to PGa antisite defects. The strain is found to be affected by the PH3 flow rate, the growth temperature, and post-growth annealing. Contrary to LT GaAs, no P precipitates are observed in cross-sectional transmission electron microscopy.

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well
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