Thermal conductivity of AlN ceramic with a very low amount of grain boundary phase at 4 to 1000 K

2002 ◽  
Vol 17 (11) ◽  
pp. 2940-2944 ◽  
Author(s):  
Koji Watari ◽  
Hiromi Nakano ◽  
Kazuyori Urabe ◽  
Kozo Ishizaki ◽  
Shixun Cao ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Grain Boundary ◽  
Single Crystal ◽  
Room Temperature ◽  
Phonon Scattering ◽  
Amorphous Film ◽  
Boundary Phase ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
Significant Difference

An AlN ceramic fired at 2173 K for 100 h under a reduced N2 atmosphere with carbon possessed a room-temperature conductivity of 272 Wm−1K−1, slightly lower than the value for high-purity, single-crystal AlN. However, the thermal conductivity of the ceramic at temperatures below 100 K was much lower than that of single crystal. This is mainly due to phonon scattering by grain junctions that possess an amorphous film with a thickness of under 1 nm. At 500 to 1000 K, no significant difference in the conductivity was observed between the ceramic and the single crystal.

scholarly journals Old Donors for New Molecular Conductors: Combining TMTSF and BEDT-TTF with Anionic (TaF6)1−x/(PF6)x Alloys

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 386
Author(s):  
Magali Allain ◽  
Cécile Mézière ◽  
Pascale Auban-Senzier ◽  
Narcis Avarvari
Keyword(s):  
Single Crystal ◽  
Room Temperature ◽  
Density Wave ◽  
Spin Density Wave ◽  
Orthorhombic Phase ◽  
Molecular Conductors ◽  
Bechgaard Salts ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
Resistivity Measurements

Tetramethyl-tetraselenafulvalene (TMTSF) and bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF) are flagship precursors in the field of molecular (super)conductors. The electrocrystallization of these donors in the presence of (n-Bu4N)TaF6 or mixtures of (n-Bu4N)TaF6 and (n-Bu4N)PF6 provided Bechgaard salts formulated as (TMTSF)2(TaF6)0.84(PF6)0.16, (TMTSF)2(TaF6)0.56(PF6)0.44, (TMTSF)2(TaF6)0.44(PF6)0.56 and (TMTSF)2(TaF6)0.12(PF6)0.88, together with the monoclinic and orthorhombic phases δm-(BEDT-TTF)2(TaF6)0.94(PF6)0.06 and δo-(BEDT-TTF)2(TaF6)0.43(PF6)0.57, respectively. The use of BEDT-TTF and a mixture of (n-Bu4N)TaF6/TaF5 afforded the 1:1 phase (BEDT-TTF)2(TaF6)2·CH2Cl2. The precise Ta/P ratio in the alloys has been determined by an accurate single crystal X-ray data analysis and was corroborated with solution 19F NMR measurements. In the previously unknown crystalline phase (BEDT-TTF)2(TaF6)2·CH2Cl2 the donors organize in dimers interacting laterally yet no organic-inorganic segregation is observed. Single crystal resistivity measurements on the TMTSF based materials show typical behavior of the Bechgaard phases with room temperature conductivity σ ≈ 100 S/cm and localization below 12 K indicative of a spin density wave transition. The orthorhombic phase δo-(BEDT-TTF)2(TaF6)0.43(PF6)0.57 is semiconducting with the room temperature conductivity estimated to be σ ≈ 0.16–0.5 S/cm while the compound (BEDT-TTF)2(TaF6)2·CH2Cl2 is also a semiconductor, yet with a much lower room temperature conductivity value of 0.001 to 0.0025 S/cm, in agreement with the +1 oxidation state and strong dimerization of the donors.

The thermal conductivity of germanium and silicon between 2 an d 300° K

1957 ◽  
Vol 238 (1215) ◽  
pp. 502-514 ◽  
Keyword(s):  
Thermal Conductivity ◽  
Room Temperature ◽  
Energy Levels ◽  
Silicon Crystal ◽  
Lattice Vibrations ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
Group Iii ◽  
Impurity Atoms ◽  
Type Silicon

The thermal conductivity of single crystals o f pure n -type germanium and of p -type germanium containing from 10 14 to 10 19 group III impurity atoms per cm 3 has been measured from 2 to 90° K . In some cases the readings have been extended up to room temperature. Whereas the low- temperature conductivity of the pure specimens is that which one would expect from a dielectric crystal, the addition of even very amounts of group III impurity decreases the conductivity very considerably and alters its temperature dependence. It is suggested that the extra thermal resistance introduced is due to the scattering of the lattice vibrations by the electrons or holes in the impurity energy levels. The theory of such scattering has been worked out by Ziman, and the experimental results are shown to be in fair agreement with this theory. A pure n -type silicon single crystal and a gold-doped p -type silicon crystal show a behaviour similar to the germanium. The room-temperature conductivity of germanium and silicon is 0⋅64 and 1⋅45 watt units respectively.

Zintl Phase as Thermoelectric Materials: Synthesis, Structure and Properties of Yb5Al2Sb6

2007 ◽  
Vol 1044 ◽  
Author(s):  
Iliya Todorov ◽  
Duck-Young Chung ◽  
Mercouri Kanatzidis
Keyword(s):  
Thermal Conductivity ◽  
Room Temperature ◽  
Spectroscopic Properties ◽  
Structure Type ◽  
Structure And Properties ◽  
Materials Synthesis ◽  
Preliminary Assessment ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
Doping Effects

AbstractWe present the synthesis, crystal structure, spectroscopic properties, and electronic structure of a new member of the Zintl family, Yb5Al2Sb6. The compound crystallizes in the Ba5Al2Bi6 structure type. A preliminary assessment of its thermoelectric properties including electrical conductivity, thermopower, and thermal conductivity are reported. Moreover, investigations of solid solutions of this phase, doping effects and chemical modifications will be presented. The room temperature conductivity, thermopower and thermal conductivity of Yb5Al2Sb6/0.5Ge were 1100 S/cm, 20 μV/K, and 3.8 W/m.K, respectively.

Characterization of intergranular cuprous oxide in polycrystalline YBa2Cu3O7-x

1988 ◽  
Vol 46 ◽  
pp. 880-881
Author(s):  
Bradley L. Thiel ◽  
Chan Han R. P. ◽  
Kurosky L. C. Hutter ◽  
I. A. Aksay ◽  
Mehmet Sarikaya
Keyword(s):  
Grain Boundary ◽  
Cuprous Oxide ◽  
Room Temperature ◽  
Boundary Phase ◽  
Spectroscopic Techniques ◽  
Transition Width ◽  
Practical Applications ◽  
Thin Foils ◽  
Superconducting Oxides

The identification of extraneous phases is important in understanding of high Tc superconducting oxides. The spectroscopic techniques commonly used in determining the origin of superconductivity (such as RAMAN, XPS, AES, and EXAFS) are surface-sensitive. Hence a grain boundary phase several nanometers thick could produce irrelevant spectroscopic results and cause erroneous conclusions. The intergranular phases present a major technological consideration for practical applications. In this communication we report the identification of a Cu2O grain boundary phase which forms during the sintering of YBa2Cu3O7-x (1:2:3 compound).Samples are prepared using a mixture of Y2O3. CuO, and BaO2 powders dispersed in ethanol for complete mixing. The pellets pressed at 20,000 psi are heated to 950°C at a rate of 5°C per min, held for 1 hr, and cooled at 1°C per min to room temperature. The samples show a Tc of 91K with a transition width of 2K. In order to prevent damage, a low temperature stage is used in milling to prepare thin foils which are then observed, using a liquid nitrogen holder, in a Philips 430T at 300 kV.

scholarly journals Synthesis and Characterization of Lithium-Ion Conductive LATP-LaPO4 Composites Using La2O3 Nano-Powder

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3502
Author(s):  
Fangzhou Song ◽  
Masayoshi Uematsu ◽  
Takeshi Yabutsuka ◽  
Takeshi Yao ◽  
Shigeomi Takai
Keyword(s):  
Room Temperature ◽  
Conduction Mechanism ◽  
Lithium Ion ◽  
X Ray Diffraction ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
X Ray ◽  
Nano Powder ◽  
Powder Addition

LATP-based composite electrolytes were prepared by sintering the mixtures of LATP precursor and La2O3 nano-powder. Powder X-ray diffraction and scanning electron microscopy suggest that La2O3 can react with LATP during sintering to form fine LaPO4 particles that are dispersed in the LATP matrix. The room temperature conductivity initially increases with La2O3 nano-powder addition showing the maximum of 0.69 mS∙cm−1 at 6 wt.%, above which, conductivity decreases with the introduction of La2O3. The activation energy of conductivity is not largely varied with the La2O3 content, suggesting that the conduction mechanism is essentially preserved despite LaPO4 dispersion. In comparison with the previously reported LATP-LLTO system, although some unidentified impurity slightly reduces the conductivity maximum, the fine dispersion of LaPO4 particles can be achieved in the LATP–La2O3 system.

Structure and Conductivity of Iodine-Doped C60 Thin Films

1994 ◽  
Vol 359 ◽  
Author(s):  
Jun Chen ◽  
Haiyan Zhang ◽  
Baoqiong Chen ◽  
Shaoqi Peng ◽  
Ning Ke ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Room Temperature ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
X Ray ◽  
Thermally Activated ◽  
Order Of Magnitude

ABSTRACTWe report here the results of our study on the properties of iodine-doped C60 thin films by IR and optical absorption, X-ray diffraction, and electrical conductivity measurements. The results show that there is no apparent structural change in the iodine-doped samples at room temperature in comparison with that of the undoped films. However, in the electrical conductivity measurements, an increase of more that one order of magnitude in the room temperature conductivity has been observed in the iodine-doped samples. In addition, while the conductivity of the undoped films shows thermally activated temperature dependence, the conductivity of the iodine-doped films was found to be constant over a fairly wide temperature range (from 20°C to 70°C) exhibiting a metallic feature.

Glass-Oxide Nanocomposites as Effective Thermal Insulation Materials

2013 ◽  
Vol 1558 ◽  
Author(s):  
Qing Hao ◽  
Minqing Li ◽  
Garrett Joseph Coleman ◽  
Qiang Li ◽  
Pierre Lucas
Keyword(s):  
Thermal Conductivity ◽  
Thermal Insulation ◽  
Room Temperature ◽  
Phonon Scattering ◽  
Material Composition ◽  
Insulation Materials ◽  
Atomic Structures ◽  
Porous Nanocomposites ◽  
Theoretical Minimum

ABSTRACTWith extremely disordered atomic structures, a glass possesses a thermal conductivity k that approaches the theoretical minimum of its composition, known as the Einstein’s limit.1 Depending on the material composition and the extent of disorder, the thermal conductivity of some glasses can be down to 0.1-0.3 W/m∙K at room temperature,2,3 representing some of the lowest k values among existing solids. Such a low k can be further reduced by the interfacial phonon scattering within a nanocomposite that can be used for thermal insulation applications. In this work, nanocomposites hot pressed from the mixture of glass nanopowder (GeSe4 or Ge20Te70Se10) and commercial SiO2 nanoparticles, or pure glass nanopowder, are investigated for the potential k reduction. It is found that adding SiO2 nanoparticles will instead increase k if the measured k values for usually porous nanocomposites are converted into those for the corresponding solid (kSolid) with Eucken’s formula. In contrast, pure glass nano-samples always show kSolid data significantly reduced from that for the starting glass. For a pure GeSe4 nano-sample, kSolid would beat the Einstein’s limit for its composition.

A comparative study of Li10.35Ge1.35P1.65S12 and Li10.5Ge1.5P1.5S12 superionic conductors

2020 ◽  
Vol 13 (06) ◽  
pp. 2050031
Author(s):  
Yue Jiang ◽  
Zhiwei Hu ◽  
Ming’en Ling ◽  
Xiaohong Zhu
Keyword(s):  
Ionic Conductivity ◽  
Room Temperature ◽  
Ionic Conductivities ◽  
Lithium Ion ◽  
Lattice Parameter ◽  
Superionic Conductors ◽  
Chemical Compositions ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
Ion Conductor

Since the lithium-ion conductor Li[Formula: see text]GeP2S[Formula: see text] (LGPS) with a super high room-temperature conductivity of 12[Formula: see text]mS/cm was first reported in 2011, sulfide-type solid electrolytes have been paid much attention. It was suggested by Kwon et al. [J. Mater. Chem. A 3, 438 (2015)] that some excess lithium ions in LGPS, namely, Li[Formula: see text]Ge[Formula: see text] P[Formula: see text]S[Formula: see text], could further improve their ionic conductivities, and the highest conductivity of 14.2[Formula: see text]mS/cm was obtained at [Formula: see text] though a larger lattice parameter that occurred at [Formula: see text]. In this study, we focus on these two different chemical compositions of LGPS with [Formula: see text] and [Formula: see text], respectively. Both samples were prepared using the same experimental process. Their lattice parameter, microstructure and room-temperature ionic conductivity were compared in detail. The results show that the main phase is the tetragonal LGPS phase but with a nearly identical amount of orthorhombic LGPS phase coexisting in both samples. Bigger lattice parameters, larger grain sizes and higher ionic conductivities are simultaneously achieved in Li[Formula: see text]Ge[Formula: see text]P[Formula: see text]S[Formula: see text] ([Formula: see text]), exhibiting an ultrahigh room-temperature ionic conductivity of 18.8[Formula: see text]mS/cm.

scholarly journals Electrical Transport and Thermoelectric Properties of SnSe–SnTe Solid Solution

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3854 ◽  
Author(s):  
Jun-Young Cho ◽  
Muhammad Siyar ◽  
Woo Chan Jin ◽  
Euyheon Hwang ◽  
Seung-Hwan Bae ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Solid Solution ◽  
Electrical Conductivity ◽  
Single Crystal ◽  
Carrier Concentration ◽  
Electrical Transport ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Practical Applications ◽  
Defect Sites

SnSe is considered as a promising thermoelectric (TE) material since the discovery of the record figure of merit (ZT) of 2.6 at 926 K in single crystal SnSe. It is, however, difficult to use single crystal SnSe for practical applications due to the poor mechanical properties and the difficulty and cost of fabricating a single crystal. It is highly desirable to improve the properties of polycrystalline SnSe whose TE properties are still not near to that of single crystal SnSe. In this study, in order to control the TE properties of polycrystalline SnSe, polycrystalline SnSe–SnTe solid solutions were fabricated, and the effect of the solid solution on the electrical transport and TE properties was investigated. The SnSe1−xTex samples were fabricated using mechanical alloying and spark plasma sintering. X-ray diffraction (XRD) analyses revealed that the solubility limit of Te in SnSe1−xTex is somewhere between x = 0.3 and 0.5. With increasing Te content, the electrical conductivity was increased due to the increase of carrier concentration, while the lattice thermal conductivity was suppressed by the increased amount of phonon scattering. The change of carrier concentration and electrical conductivity is explained using the measured band gap energy and the calculated band structure. The change of thermal conductivity is explained using the change of lattice thermal conductivity from the increased amount of phonon scattering at the point defect sites. A ZT of ~0.78 was obtained at 823 K from SnSe0.7Te0.3, which is an ~11% improvement compared to that of SnSe.

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