Photoluminescence investigation of CdZnTe:In single crystals annealed in CdZn vapors

2006 ◽  
Vol 21 (7) ◽  
pp. 1807-1809 ◽  
Author(s):  
Ge Yang ◽  
Wanqi Jie ◽  
Qunying Zhang
Keyword(s):  
Single Crystals ◽  
Annealing Treatment ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Temperature Step ◽  
Acceptor Pair ◽  
Neutral Donor ◽  
Donor Acceptor ◽  
The Right ◽  
Neutral Acceptor

CdZnTe:In single crystals were annealed in CdZn vapors through a method involving a high-temperature step and a low-temperature step in sequence. The effects of annealing on the properties of CdZnTe:In were characterized with photoluminescence (PL) spectra. The neutral acceptor bound exciton (A0, X) peak, which was on the right shoulder of the neutral donor bound exciton (D0, X) peak, disappeared after annealing. A fine donor-acceptor pair structure and its longitudinal optical phonon replicas were clear before annealing. However, both of them became undistinguishable in the PL spectrum of annealed CdZnTe:In. The two phenomena imply that the annealing treatment can remove the impurities from CdZnTe:In wafers effectively. In addition, the intensity of Dcomplex band fell remarkably after annealing, which confirmed that Cd vacancies were well-compensated in the annealing treatment.

The Effects Of Substitutional Alkaline Metals In Zinc Vacancy Of Zincselenide Single Crystals Grown By The Sublimation Method

1996 ◽  
Vol 442 ◽  
Author(s):  
Kenji Yoshino ◽  
Kouji Maeda ◽  
Atsuhiko Fukuyama ◽  
Yoshito Akashi ◽  
Kiyohisa Imada ◽  
...  
Keyword(s):  
Single Crystals ◽  
Free Exciton ◽  
Energy Shift ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Impurity Atoms ◽  
Peak Energy ◽  
Sublimation Method ◽  
Donor Acceptor ◽  
Metal Doped

AbstractThe photoluminescence measurements of alkaline metal doped zincselenide (ZnSe) single crystals were carried out to investigate how the impurity atoms substitute the intrinsic vacancy. Sample are grown by the sublimation method and the Li and Na with the concentrations of 0.1, 0.25 and 0.5 mol% were incorporated simultaneously. In the PL spectra with lower impurity concentrations, bound exciton lines of deep acceptor and donor-acceptor pair (DAP) bands were clearly observed accompanied by a weak free exciton line. Although the bound exciton lines becomes smaller with increasing the impurity concentration, the DAP band remains strong and its peak energy shift to lower energy side with the concentration. The decrease of the bound exciton lines is drastic for Li-doped sample than Na-doped sample. This indicates that Li atoms more easily occupy the Zn vacancies than Na.

scholarly journals Donor-acceptor pair recombination in AgIn5S8 single crystals

1999 ◽  
Vol 85 (6) ◽  
pp. 3198-3201 ◽  
Author(s):  
N. M. Gasanly ◽  
A. Serpengüzel ◽  
A. Aydinli ◽  
O. Gürlü ◽  
I. Yilmaz
Keyword(s):  
Single Crystals ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Low-temperature luminescence in organic-inorganic lead iodide perovskite single crystals

2021 ◽  
Author(s):  
Irina Vladimirovna Zhevstovskikh ◽  
Nikita Averkiev ◽  
Maksim Sarychev ◽  
Olga Semenova ◽  
Oleg Tereshchenko
Keyword(s):  
Single Crystals ◽  
Thermal Evolution ◽  
Free Exciton ◽  
Orthorhombic Phase ◽  
Lead Iodide ◽  
Acceptor Pair ◽  
Donor And Acceptor ◽  
Donor Acceptor ◽  
Pl Emission ◽  
Methylammonium Lead Iodide

Abstract We present temperature and laser-power dependent photoluminescence (PL) study of methylammonium lead iodide (CH3NH3PbI3) single crystals in the orthorhombic phase. At temperatures below 140 K, we revealed the multi-component PL emission. In addition to a free exciton with an energy of 1.65 eV, we found emission bands with peaks approximately equal to 1.6 eV, 1.52 eV, and 1.48 eV. Analysis of the thermal evolution of the intensities, peak positions, and linewidths of all the PL bands allowed one to determine their origin. We attributed the PL peak with the energy of 1.6 eV to a bound exciton, while the free exciton-bound exciton splitting energy is 50-60 meV. The PL emission with an energy of 1.52 eV can be explained by the donor-acceptor pair (DAP) recombination, where donor and acceptor defects have a depth of about 12 meV and 120 meV, respectively. MA (CH3NH3) interstitials (MA+i ) and lead vacancies (V2-Pb) are the most suitable for the DAP transition to occur in CH3NH3PbI3 crystals. The 1.48 eV PL emission is consistent with the recombination of self-trapped excitons, and interstitial iodine is likely to be an active trap source. We found the variation of the self-trapped depth from 15 meV (at T<80 K) to 53 meV (at T>80 K) with increasing the temperature. Although the multi-component PL emission in CH3NH3PbI3 single crystals appears at low temperatures, defects and excitonic traps that cause this emission can affect the photophysics of hybrid perovskites at higher temperatures.

Photoluminescence spectra of undoped and Sm3+-doped BaAl2S4 and BaAl2Se4 single crystals

2001 ◽  
Vol 16 (5) ◽  
pp. 1520-1524 ◽  
Author(s):  
Moon-Seog Jin ◽  
Choong-Il Lee ◽  
Chang-Sun Yoon ◽  
Chang-Dae Kim ◽  
Jae-Mo Goh ◽  
...  
Keyword(s):  
Single Crystals ◽  
Energy Levels ◽  
Photoluminescence Spectra ◽  
Acceptor Pair ◽  
Chemical Transport Reaction ◽  
Ionic Radii ◽  
Transport Reaction ◽  
Broad Emission ◽  
Electron Transitions ◽  
Donor Acceptor

Undoped and Sm3+-doped BaAl2S4 and BaAl2Se4 single crystals were grown by the chemical transport reaction method. The optical energy band gaps of the BaAl2S4 and BaAl2Se4 were found to be 4.10 and 3.47 eV, respectively, at 5 K. In their photoluminescence spectra measured at 5 K, broad emission peaks at 459 and 601 nm appeared in the BaAl2S4 and at 486 and 652 nm in the BaAl2Se4. These emissions are assigned to donor–acceptor pair recombinations. Sharp emission peaks were observed in the Sm3+-doped BaAl2S4 and BaAl2Se4 single crystals at 5 K. Taking into account the ionic radii of the cations and Sm3+, these sharp emission peaks are attributed to the electron transitions between the energy levels of Sm3+ substituting with the Ba site.

Donor-acceptor pair recombination luminescence from Cu2ZnSnS4bulk single crystals

2006 ◽  
Vol 203 (11) ◽  
pp. 2891-2896 ◽  
Author(s):  
K. Tanaka ◽  
Y. Miyamoto ◽  
H. Uchiki ◽  
K. Nakazawa ◽  
H. Araki
Keyword(s):  
Single Crystals ◽  
Acceptor Pair ◽  
Recombination Luminescence ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

scholarly journals Homologous versus heterologous interactions in the bicomponent staphylococcal γ-haemolysin pore1

2006 ◽  
Vol 394 (1) ◽  
pp. 217-225 ◽  
Author(s):  
Gabriella Viero ◽  
Romina Cunaccia ◽  
Gilles Prévost ◽  
Sandra Werner ◽  
Henri Monteil ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Pore Formation ◽  
Resonance Energy Transfer ◽  
Resonance Energy ◽  
Wild Type ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Left And Right ◽  
Donor Acceptor Pair ◽  
The Right

Staphylococcal γ-haemolysin HlgA–HlgB forms a β-barrel transmembrane pore in cells and in model membranes. The pore is formed by the oligomerization of two different proteins and a still debated number of monomers. To clarify the topology of the pore, we have mutated single residues – placed near the right and left interfaces of each monomer into cysteine. The mutants were labelled with fluorescent probes, forming a donor–acceptor pair for FRET (fluorescence resonance energy transfer). Heterologous couples (labelled on complementary left and right interfaces) displayed a marked FRET, suggesting extensive HlgA–HlgB or HlgB–HlgA contacts. Heterologous control couples (with both components labelled on the same side) showed absent or low FRET. We found the same result for the homologous couple formed by HlgA [i.e. HlgA–HlgA in the presence of wt (wild-type) HlgB]. The homologous HlgB couple (HlgB–HlgB labelled on left and right interfaces and in the presence of wt HlgA) displayed a transient, declining FRET, which may indicate fast formation of an intermediate that is consumed during pore formation. We conclude that bicomponent pores are assembled by alternating heterologous monomers.

Alloy Dependent Properties of Excitons and Deep Acceptors in CdZnTe Volume Crystals

1992 ◽  
Vol 242 ◽  
Author(s):  
B. K. Meyer ◽  
D. M. Hofmann ◽  
K. Oettinger ◽  
W. Stadler ◽  
Al. L. Efros ◽  
...  
Keyword(s):  
Alloy Composition ◽  
Energy Gap ◽  
Theoretical Calculations ◽  
Anion Vacancy ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Neutral Acceptor ◽  
Low Temperature Photoluminescence ◽  
Excitonic Energy

ABSTRACTCd1-xZnxTe ZriTe crystals grown by the travelling heater methode (THM) have been investigated by low temperature photoluminescence (PL). The excitonic energy gap as a function of the alloy composition was determined for the complete range of x - 0 to x - 1. The composition dependent broadening of the neutral acceptor bound exciton (A°X) line was measured and compared to theoretical calculations. The Donor - Acceptor pair luminescence in the crystals is a superposition of recombinations due to residual Cu acceptors and A - centers (anion vacancy - donor pairs ).

Optical properties of Ho3+-, Er3+-, and Tm3+-doped BaIn2S4 and BaIn2Se4 single crystals

2002 ◽  
Vol 17 (8) ◽  
pp. 2147-2152 ◽  
Author(s):  
Sang-An Park ◽  
Mi-Yang Kim ◽  
Wha-Tek Kim ◽  
Moon-Seog Jin ◽  
Sung-Hyu Choe ◽  
...  
Keyword(s):  
Single Crystals ◽  
Energy Gap ◽  
Photoluminescence Spectra ◽  
Optical Energy Gap ◽  
Acceptor Pair ◽  
Chemical Transport Reaction ◽  
Transport Reaction ◽  
Optical Energy ◽  
Broad Emission ◽  
Donor Acceptor

BaIn2S4, BaIn2S4:Ho3+, BaIn2S4:Er3+, BaIn2S4:Tm3+, BaIn2Se4, BaIn2Se4:Ho3+, BaIn2Se4:Er3+, and BaIn2Se4:Tm3+ single crystals were grown by the chemical transport reaction method. The optical energy gap of the single crystals was found to be 3.057, 2.987, 2.967, 2.907, 2.625, 2.545, 2.515, and 2.415 eV, respectively, at 11 K. The temperature dependence of the optical energy gap was well fitted by the Varshni equation. Broad emission peaks were observed in the photoluminescence spectra of the single crystals. They were assigned to donor–acceptor pair recombination. Sharp emission peaks were observed in the doped single crystals. They were attributed to be due to radiation recombination between the Stark levels of the Ho3+, Er3+, and Tm3+ ions sited in C1 symmetry.

Photoluminescence Study of p-ZnGeP2 Crystals

1996 ◽  
Vol 450 ◽  
Author(s):  
Yurri V. Rud ◽  
Vasilii Yu ◽  
M. C. Ohmer ◽  
P. G. Shunemann
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Room Temperature ◽  
Directed Crystallization ◽  
Acceptor Pair ◽  
Long Wavelength ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Nonlinear Devices ◽  
Conversion Efficiencies

ABSTRACTPhotoluminescence (PL) steady-state spectra of p-ZnGeP2 (ZGP) single crystals grown by high- and low-temperature directed crystallization have been investigated. It is determined that the long-wavelength component PL with a maximum in the interval 1.2–1.5 eV for different crystals quenched in the temperature range 77–300 K. The long-wavelength component PL are due to donor-acceptor pair transitions. At room temperature the short-wavelength PL with a maximum near 1.85 eV becomes the determining component. The nature of this band discussed. The use of low-temperature directed crystallization reduces the concentration of lattice defects in ZGP single crystals and opens up the new possibilities for increasing the conversion efficiencies of nonlinear devices.

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