Sputtered Nb- and Ta-doped TiO2 transparent conducting oxide films on glass

2007 ◽  
Vol 22 (10) ◽  
pp. 2832-2837 ◽  
Author(s):  
Meagen A. Gillispie ◽  
Maikel F.A.M. van Hest ◽  
Matthew S. Dabney ◽  
John D. Perkins ◽  
David S. Ginley
Keyword(s):  
Dopant Concentration ◽  
Anatase Phase ◽  
Transparent Conducting Oxide ◽  
Rf Magnetron Sputtering ◽  
Oriented Crystal ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
High Dopant Concentration ◽  
The Difference ◽  
Substrate Temperatures

Radio frequency (rf) magnetron sputtering is used to deposit Ti0.85Nb0.15O2 and Ti0.8Ta0.2O2 films on glass substrates at substrate temperatures (TS) ranging from ∼250 to 400 °C. The most conducting Nb-doped TiO2 films were deposited at TS = 370 °C, with conductivities of ∼60 S/cm, carrier concentrations of 1.5 × 1021 cm−3 and mobilities <1 cm2/V·s. The conductivity of the films was limited by the mobility, which was more than 10 times lower than the mobility for films deposited epitaxially on SrTiO3. The difference in properties is likely caused by the randomly oriented crystal structure of the films deposited on glass compared with biaxially textured films deposited on SrTiO3. The anatase phase could not be stabilized in the Ta-doped TiO2 films, likely because of the high dopant concentration.

scholarly journals Physical Properties of ZnO Thin Films Codoped with Titanium and Hydrogen Prepared by RF Magnetron Sputtering with Different Substrate Temperatures

2015 ◽  
Vol 2015 ◽  
pp. 1-11 ◽  
Author(s):  
Fang-Hsing Wang ◽  
Jen-Chi Chao ◽  
Han-Wen Liu ◽  
Tsung-Kuei Kang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Surface ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Diffraction Patterns ◽  
Substrate Temperatures

Transparent conducting titanium-doped zinc oxide (TZO) thin films were prepared on glass substrates by RF magnetron sputtering using 1.5 wt% TiO2-doped ZnO as the target. Electrical, structural, and optical properties of films were investigated as a function of H2/(Ar + H2) flow ratios (RH) and substrate temperatures (TS). The optimalRHvalue for achieving high conducting TZO:H thin film decreased from 10% to 1% whenTSincreased from RT to 300°C. The lowest resistivity of9.2×10-4 Ω-cm was obtained asTS=100°C andRH=7.5%. X-ray diffraction patterns showed that all of TZO:H films had a hexagonal wurtzite structure with a preferred orientation in the (002) direction. Atomic force microscopy analysis revealed that the film surface roughness increased with increasingRH. The average visible transmittance decreased with increasingRHfor the RT-deposited film, while it had not considerably changed with differentRHfor the 300°C-deposited films. The optical bandgap increased asRHincreased, which is consistent with the Burstein-Moss effect. The figure of merits indicated thatTS=100°C andRH=7.5% were optimal conditions for TZO thin films as transparent conducting electrode applications.

Microstructure and Electrical Properties of AZO Films Prepared by RF Magnetron Sputtering

2011 ◽  
Vol 264-265 ◽  
pp. 754-759 ◽  
Author(s):  
Bakri Jufriadi ◽  
Agus Geter E. Sutjipto ◽  
R. Othman ◽  
R. Muhida
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Transparent Conducting Oxide ◽  
Rf Magnetron Sputtering ◽  
Flat Panel Displays ◽  
Emi Shielding ◽  
Transparent Conducting ◽  
Deposition Processes ◽  
Electro Magnetic ◽  
Static Discharge

AZO is an ideal replacement transparent conducting oxide (TCO) for ITO to all corresponding applications. The typical applications include: transparent electrodes for solar cells, flat panel displays, LCD electrodes, electro-magnetic compatibility (RF-EMI shielding) coatings, touch panel transparent contacts, static discharge dissipation. The production of useful and commercially attractive thin films using different deposition processes is very important parameter to investigate. A systematic study of the sputtering condition and their influenced on electrical and structural were studied. In this work, AZO films were deposited by RF magnetron sputtering at 200 °C. The result shows that the deposited time has influenced the characteristic of deposited AZO films. For a longer deposition time, thin film shows a uniform grain growth. The resistivity found minimum at the deposition time of 45 minutes. It can be considered that by reducing of the grain boundaries which enable the electron carries to conduct smoothly.

Influence of Deposition Parameters on the Characteristics of AZOY Transparent Conducting Oxide Thin Film

2010 ◽  
Vol 434-435 ◽  
pp. 653-656
Author(s):  
Chien Chen Diao ◽  
Chao Chin Chan ◽  
Chia Ching Wu ◽  
Cheng Fu Yang
Keyword(s):  
Cross Sections ◽  
Transparent Conducting Oxide ◽  
Rf Sputtering ◽  
Raw Material ◽  
Oxide Thin Film ◽  
Coating Materials ◽  
Transparent Conducting ◽  
Deposition Parameters ◽  
Substrate Temperatures ◽  
Scanning Electron

“GfE Coating Materials Company” had developed a novel AZOY transparent conducting oxide (TCO) material that used ZnO as raw material and contained a small amount of Y2O3 and Al2O3. In this study, the AZOY material developed by GfE company is used as the based TCO material and we will develop the influences of substrate temperatures on the characteristics of AZOY TCO films by RF sputtering method, under optimal O2/argon ratio and depositing pressure. After deposition, the sheet resistance of AZOY films is measured with a four point probe, and surface morphology and cross-sections are studied using a field emission scanning electron microscope (FESEM). And finally, the UV-Vis spectrophotometer is used to find the transmittance of AZOY TCO films.

Substrate Temperature Dependence on Sputtered Titania Thin Film

2013 ◽  
Vol 795 ◽  
pp. 294-298 ◽  
Author(s):  
Zainuddin Aznilinda ◽  
Sukreen Hana Herman ◽  
A.B. Raudah ◽  
W.F.H. Abdullah ◽  
M. Rusop
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Columnar Structure ◽  
Film Structure ◽  
Glass Substrates ◽  
Titania Thin Film ◽  
Titania Films ◽  
Substrate Temperatures

Titania films were deposited on glass substrates by RF magnetron sputtering method at different substrate temperatures which are room temperature, 50°C, 100°C, 150°C, 200°C, 250°C and 300°C. The surface morphology and cross section of the particles structure were studied using Field Emission Scanning Electron Microscope. It is shown that the increase in substrate temperature during the sputtering process up to 300°C will make the film become more dense and grown in a columnar structure. Significant changes occur on the titania thin film structure at 250°C due to the significant changes in the surface thermal energy and the surface diffusion.

Fabrication of nanoporous titania on glass and transparent conducting oxide substrates by anodization of titanium films

2007 ◽  
Vol 22 (3) ◽  
pp. 681-687 ◽  
Author(s):  
Andrew J. Leenheer ◽  
Alexander Miedaner ◽  
Calvin J. Curtis ◽  
Maikel F.A.M. van Hest ◽  
David S. Ginley
Keyword(s):  
Thin Films ◽  
Organic Photovoltaics ◽  
Hydrofluoric Acid ◽  
Transparent Conducting Oxide ◽  
Trisodium Citrate ◽  
Rf Magnetron Sputtering ◽  
Potassium Fluoride ◽  
Sem Analysis ◽  
Nanoporous Structure ◽  
Transparent Conducting

Nanoporous titania (TiO2) or titania nanotubes could provide a continuous nanostructured electron-conducting anode for organic photovoltaics. In this work, nanoporous titania was formed by anodizing thin films of titanium on both glass and transparent conducting oxide (TCO) substrates. Titanium thin films (500–700 nm) were deposited by radio frequency (RF) magnetron sputtering. Films were anodized in acidic electrolytes containing small amounts of hydrofluoric acid (HF) at constant voltages ranging from 7 to 15 V. Scanning electron microscope (SEM) analysis revealed a nanoporous structure. Nanoporous titania structures were grown on glass in an electrolyte containing sulfuric acid, trisodium citrate, and potassium fluoride, with pore diameters around 50 nm. Analyzing the films at different anodization times, the stages of nanopore formation were elucidated. Additionally, nanoporous titania was formed on a TCO substrate by anodizing in an electrolyte containing acetic acid and hydrofluoric acid. While not completely transparent, the nanoporous titania is promising for use in organic photovoltaics.

Microwave calcination of thin TiO2films on transparent conducting oxide glass substrates

2004 ◽  
Vol 39 (20) ◽  
pp. 6361-6363 ◽  
Author(s):  
D. Menzies ◽  
Qing Dai ◽  
Yi-Bing Cheng ◽  
G. Simon ◽  
L. Spiccia
Keyword(s):  
Transparent Conducting Oxide ◽  
Oxide Glass ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Microwave Calcination

scholarly journals The Role of Dopant Concentration on Conductivity and Mobility of CdTe Thin Films

2011 ◽  
Vol 2011 ◽  
pp. 1-6 ◽  
Author(s):  
Ala J. Al-Douri ◽  
F. Y. Al-Shakily ◽  
Abdalla A. Alnajjar ◽  
Maysoon F. A. Alias
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Dopant Concentration ◽  
Glass Substrates ◽  
Order Of Magnitude ◽  
Cdte Thin Films ◽  
P Type ◽  
Substrate Temperatures

Films of CdTe pure and doped with various atomic percentages of Al and Sb (0.5, 1.5 & 2.5) were prepared, and their electrical properties were investigated. The films were prepared by thermal evaporation on glass substrates at two substrate temperatures (Ts=RT& 423 K). The results showed that the conduction phenomena of all the investigated CdTe thin films on glass substrates are caused by two distinct mechanisms. Room temperature DC conductivity increases by a factor of four for undoped CdTe thin films asTsincreases and by 1-2 orders of magnitude with increasing dopant percentage of Al and Sb. In general, films doped with Sb are more efficient than Al-doped films. The activation energy (Ea2) decreases with increasingTsand dopant percentage for both Al and Sb. Undoped CdTe films deposited at RT are p-type convert to n-type with increasingTsand upon doping with Al at more than 0.5%. The carrier concentration decreases asTsincreases while it increases with increasing dopant percentage. Hall mobility decreases more than three times as Al increases whereas it increases about one order of magnitude with increasing Sb percentage in CdTe thin films deposited at 423 K and RT, respectively.

Effect of Substrate Temperature on the Properties of Al-Doped ZnO Films by RF Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 1293-1297 ◽  
Author(s):  
Yue Bo Wu ◽  
Sheng Lei ◽  
Zhe Wang ◽  
Ru Hai Zhao ◽  
Lei Huang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Higher Temperature ◽  
Doped Zno ◽  
Substrate Temperatures

The Al-doped ZnO (AZO) films were deposited on the glass substrates by RF magnetron sputtering at different substrate temperatures. The effect of substrate temperature on the structural, optical, and electrical properties of AZO films was investigated. The results indicate each of the films has a preferential c-axis orientation. The grain size increases with substrate temperature increasing. All the films exhibit a high transmittance in visible region and have sharp ultraviolet absorption characteristics. The resistivity decreases with substrate temperature increasing up to 250oC, then increases for higher temperature.

scholarly journals High Performance Transparent Conducting Films of Cadmium Indate Prepared by Rf sputtering.

1996 ◽  
Vol 426 ◽  
Author(s):  
T. J. Coutts ◽  
X. Wu ◽  
W. P. Mulligan
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
High Performance ◽  
Visible Region ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Before And After

AbstractWe are examining various spinel-structured thin films (e.g., Cd2SnO4, Zn2SnO4) to develop higher-quality transparent conducting oxides (TCO) than more conventional materials such as indium tin oxide. Here, we report on cadmium indate (CdIn2O4, CIO), which is another member of this family. Thin films of CIO were deposited by radio-frequency (RF) magnetron sputtering, from an oxide target, onto borosilicate glass substrates. The variables included the substrate temperature, sputtering gas composition, and pressure. Film properties were measured before and after heat treatment. Characterization involved Hall effect measurements, optical and infrared spectrophotometry, X-ray diffraction, and atomic-force microscopy. Film resistivities as low as 2.3x10-4Ω cm were achieved for a film thickness of 0.55 μm. The transmittance was 90% in the visible region of the spectrum, without correction for substrate losses and without an anti-reflection coating. The plasma resonance occurred at longer wavelengths than for other materials and this, with a bandgap of approximately 3.1 eV, presents a wide window for optical transmittance. The highest mobility was 54 cm2 V-s-1 and the highest carrier concentration was 7.5x1020 cm-3.

Sign in / Sign up

Export Citation Format

Share Document