Substrate Temperature Dependence on Sputtered Titania Thin Film

2013 ◽  
Vol 795 ◽  
pp. 294-298 ◽  
Author(s):  
Zainuddin Aznilinda ◽  
Sukreen Hana Herman ◽  
A.B. Raudah ◽  
W.F.H. Abdullah ◽  
M. Rusop
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Columnar Structure ◽  
Film Structure ◽  
Glass Substrates ◽  
Titania Thin Film ◽  
Titania Films ◽  
Substrate Temperatures

Titania films were deposited on glass substrates by RF magnetron sputtering method at different substrate temperatures which are room temperature, 50°C, 100°C, 150°C, 200°C, 250°C and 300°C. The surface morphology and cross section of the particles structure were studied using Field Emission Scanning Electron Microscope. It is shown that the increase in substrate temperature during the sputtering process up to 300°C will make the film become more dense and grown in a columnar structure. Significant changes occur on the titania thin film structure at 250°C due to the significant changes in the surface thermal energy and the surface diffusion.

Effect of Substrate Temperature on the Properties of Al-Doped ZnO Films by RF Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 1293-1297 ◽  
Author(s):  
Yue Bo Wu ◽  
Sheng Lei ◽  
Zhe Wang ◽  
Ru Hai Zhao ◽  
Lei Huang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Higher Temperature ◽  
Doped Zno ◽  
Substrate Temperatures

The Al-doped ZnO (AZO) films were deposited on the glass substrates by RF magnetron sputtering at different substrate temperatures. The effect of substrate temperature on the structural, optical, and electrical properties of AZO films was investigated. The results indicate each of the films has a preferential c-axis orientation. The grain size increases with substrate temperature increasing. All the films exhibit a high transmittance in visible region and have sharp ultraviolet absorption characteristics. The resistivity decreases with substrate temperature increasing up to 250oC, then increases for higher temperature.

Structure of vacuum-deposited Zn3P2 films

1986 ◽  
Vol 64 (10) ◽  
pp. 1369-1373 ◽  
Author(s):  
U. von Sacken ◽  
D. E. Brodie
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Columnar Structure ◽  
Major Effect ◽  
Film Structure ◽  
Electron Bombardment ◽  
Initial Growth ◽  
Transmission Electron

The structure of polycrystalline Zn3P2 films has been studied for 1- to 2-μm-thick vacuum-deposited films on glass substrates. Transmission electron microscopy and X-ray diffraction techniques have been used to obtain a detailed, quantitative analysis of the film structure. The initial growth consists of small (≤ 10 nm), randomly oriented grains. As the film thickness increases, the growth of crystallites with the {220} planes oriented approximately parallel to the substrate is favoured, and a columnar structure develops along with a highly preferred orientation. This structure has been observed directly by transmission electron microscopy of thin cross sections of the films. The size of the grains at the free surface increases with the film thickness, reaching approximately 200–300 nm when the film is 1 μm thick. The effects of substrate temperature and low-energy (0.5–2 keV) electron bombardment of the film during growth have also been studied. Neither substrate temperature nor electron bombardment appear to have a major effect on the film structure. The primary effect of electron bombardment appears to be the creation of preferred nucleation sites on the substrate.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

scholarly journals AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Kyohei Nakamura ◽  
Atsushi Kobayashi ◽  
Kohei Ueno ◽  
Jitsuo Ohta ◽  
Hiroshi Fujioka
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Glass Substrates

scholarly journals The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 136
Author(s):  
Ping Tang ◽  
Weimin Wang ◽  
Bing Li ◽  
Lianghuan Feng ◽  
Guanggen Zeng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Photovoltaic Effect ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Sem Images ◽  
Glass Substrates ◽  
Substrate Temperatures

Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. However, AlSb is highly deliquescent and not stable, which has brought great difficulties to the applications. Based on the above situation, there are two purposes for preparing our Zn-doped AlSb (AlSb:Zn) thin films: One is to make P-type AlSb and the other is to find a way to suppress the deliquescence of AlSb. The AlSb:Zn thin films were prepared on glass substrates at different substrate temperatures by using the pulsed laser deposition (PLD) method. The structural, surface morphological, optical, and electrical properties of AlSb:Zn films were investigated. The crystallization of AlSb:Zn thin films was enhanced and the electrical resistivity decreased as the substrate temperature increased. The scanning electron microscopy (SEM) images indicated that the grain sizes became bigger as the substrate temperatures increased. The Raman vibration mode AlSb:Zn films were located at ~107 and ~142 cm−1 and the intensity of Raman peaks was stronger at higher substrate temperatures. In the experiment, a reduced band gap (1.4 eV) of the AlSb:Zn thin film was observed compared to the undoped AlSb films, which were more suitable for thin-film solar cells. Zn doping could reduce the deliquescent speed of AlSb thin films. The fabricated heterojunction device showed the good rectification behavior, which indicated the PN junction formation. The obvious photovoltaic effect has been observed in an FTO/ZnS/AlSb:Zn/Au device.

High performance thin film transistor with HfSiO x dielectric fabricated at room temperature RF-magnetron sputtering

2013 ◽  
Vol 9 (4) ◽  
pp. 381-384 ◽  
Author(s):  
Dongkyu Cho ◽  
Sanghyun Woo ◽  
Jungil Yang ◽  
Donghee Lee ◽  
Yoosung Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
High Performance ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Rf Magnetron Sputtering

Growth of Co Nanoclusters on SiC Honeycomb Templates

2004 ◽  
Vol 818 ◽  
Author(s):  
Wei Chen ◽  
Kian Ping Loh ◽  
Hai Xu ◽  
A.T.S. Wee
Keyword(s):  
Substrate Temperature ◽  
Room Temperature ◽  
Scanning Tunneling ◽  
Nucleation Process ◽  
Desorption Rate ◽  
Tunneling Microscopy ◽  
Scale Range ◽  
Reconstructed Surface ◽  
Substrate Temperatures

AbstractA honeycomb-like SiC reconstructed surface with regular, periodic porosity in the nano-scale range has been used as an effective template for the formation of monodispersed Co nanoclusters. In-situ scanning tunneling microscopy (STM) was used to study the nucleation process of the Co nanoclusters on this template. The deposition of Co at different substrate temperature was investigated by STM. It is found that the failure in the deposition of Co nanoclusters on the SiC honeycomb template with substrate temperatures higher than room temperature (RT) might be due to the high desorption rate of the adsorbed Co atoms.

The Influence of Thin Film Thickness on the Characteristics of Bismuth Titanate Oxide

2007 ◽  
Vol 336-338 ◽  
pp. 129-132
Author(s):  
Cheng Fu Yang ◽  
Wei Kuo Chia ◽  
Ying Chung Chen ◽  
Chien Min Cheng
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Room Temperature ◽  
Bismuth Titanate ◽  
Electrical Breakdown ◽  
Rf Magnetron Sputtering ◽  
The Other ◽  
Thin Film Thickness ◽  
Sims Analysis ◽  
Xrd Patterns

Bi4Ti3O12 thin films were deposited on Pt/Ti/Si(p-100) substrate by RF magnetron sputtering at room temperature, and crystallized in a RTA furnace at temperature of 675°C for 10 minutes. SIMS analysis identifies that bismuth content in the Bi4Ti3O12 thin film reduced slightly from the surface into a depth of approximately 200 nm. XRD patterns revealed (117) phase was dominated regardless the film thickness, and the intensity of the other peaks increased with the increase of film thickness. (200) peak became dominant when the thickness of films were greater than 680 nm. SEM observation showed that the grains were stripe plate-like, and the grain size increased with the increase of film thickness. Dielectric constant increased with the increase of film thickness, and kept around a certain value with the thickness ranging from 300 to 640 nm, then it rose again as the film thickness above 680 nm. The leakage current and electrical breakdown also strongly depended on the film thickness.

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