Multilayer Coatings for Focusing Hard X-ray Telescopes

1998 ◽  
Vol 551 ◽  
Author(s):  
A. Ivan ◽  
R. Bruni ◽  
K. Byun ◽  
J. Everett ◽  
P. Gorenstein ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Single Layer ◽  
Multilayer Coatings ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
Auger Analysis ◽  
Cross Sectional ◽  
X Ray ◽  
Specular Reflectivity

AbstractSeveral multilayer test coatings for hard X-ray telescopes were fabricated using DC magnetron sputtering. The process parameters were selected from a series of trials of single layer depositions. The samples were characterized using X-ray specular reflectivity scans, AFM, and cross-sectional TEM. Additional measurements (stylus profilometry, RBS, and Auger analysis) were used in the optimization of the deposition rate and of the thin film properties (density, composition, surface/interface microroughness). The X-ray reflectivity scans showed that the combinations of reflector and spacer materials tested so far (W/Si and W/C) are suited for graded d-spacing multilayer coatings that present a constant reflectivity bandpass up to 70 keV.

scholarly journals The Effects of Annealing Temperature on the Structural Properties of ZrB2 Films Deposited via Pulsed DC Magnetron Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 253 ◽  
Author(s):  
Wei-Chun Chen ◽  
Chao-Te Lee ◽  
James Su ◽  
Hung-Pin Chen
Keyword(s):  
Electron Microscopy ◽  
Magnetron Sputtering ◽  
Structural Properties ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Film Structure ◽  
Dc Magnetron Sputtering ◽  
Cross Sectional ◽  
X Ray

Zirconium diboride (ZrB2) thin films were deposited on a Si(100) substrate using pulsed direct current (dc) magnetron sputtering and then annealed in high vacuum. In addition, we discussed the effects of the vacuum annealing temperature in the range of 750 to 870 °C with flowing N2 on the physical properties of ZrB2 films. The structural properties of ZrB2 films were investigated with X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The XRD patterns indicated that the ZrB2 films annealed at various temperatures exhibited a highly preferred orientation along the [0001] direction and that the residual stress could be relaxed by increasing the annealing temperature at 870 °C in a vacuum. The surface morphology was smooth, and the surface roughness slightly decreased with increasing annealing temperature. Cross-sectional TEM images of the ZrB2/Si(100) film annealed at 870 °C reveals the films were highly oriented in the direction of the c-axis of the Si substrate and the film structure was nearly stoichiometric in composition. The XPS results show the film surfaces slightly contain oxygen, which corresponds to the binding energy of Zr–O. Therefore, the obtained ZrB2 film seems to be quite suitable as a buffer layer for III-nitride growth.

Effect of Annealing Temperature on Platinum/YSZ Thin Film Fabricated Using RF and DC Magnetron Sputtering

2017 ◽  
Vol 268 ◽  
pp. 229-233
Author(s):  
A.R. Nurhamizah ◽  
Zuhairi Ibrahim ◽  
Rosnita Muhammad ◽  
Yussof Wahab ◽  
Samsudi Sakrani
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Post Annealing ◽  
Two Temperatures ◽  
Platinum Thin Film

This research aims to study the growth and the effect of annealing temperature on the structural properties of Platinum/YSZ/Platinum thin film. The thin films were prepared by RF and DC magnetron sputtering method utilized platinum as electrodes (anode and cathode) and YSZ as electrolyte. Two temperatures of annealing (400 and 600 °C) were conducted onto Platinum/YSZ/Platinum thin film for comparison in this study. Crystalline phase, microstructure and thickness of thin films were evaluated using X-Ray Diffraction (XRD) and Field Emission Scanning Electron Microscope (FE-SEM) technique. Results show that Pt/YSZ/Pt thin film without post-annealing gives a better morphology and crystal phase.

DEPOSITION OF TiAlV THIN FILMS BY PULSED LASER AND DC MAGNETRON SPUTTERING: STRUCTURAL, COMPOSITIONAL AND ELECTROCHEMICAL CORROSION STUDY

2019 ◽  
Vol 27 (08) ◽  
pp. 1950188
Author(s):  
A. ALKHAWWAM ◽  
B. ABDALLAH ◽  
A. K. JAZMATI ◽  
M. TOOTANJI ◽  
F. LAHLAH
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Corrosion Test ◽  
Pulsed Laser ◽  
Electrochemical Corrosion ◽  
Target Material ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
X Ray

In this work, TiAlV thin films have been prepared on two different types of substrates: silicon and stainless steel (SS304) by two deposition methods: Pulsed Laser Deposition (PLD) and DC magnetron sputtering. Different techniques have been employed in order to characterize film properties such as: Scanning Electron Microscopy (SEM) equipped with Energy Dispersive X-ray (EDX), X-ray diffraction (XRD), microhardness and corrosion test. EDX analysis showed that the deposited films are slightly different from that of the target material Ti6Al4V alloy. The measured microhardness values are about 11.7[Formula: see text]GPa and 4.7[Formula: see text]GPa for films prepared by PLD and DC magnetron sputtering, respectively. Corrosion test indicated that the corrosion resistance of the two TiAlV films deposited on SS304 substrates in (0.9% NaCl) physiological normal saline medium was significantly improved compared with the SS304 substrates. These attractive results could permit applications of our films in the medical implants fabrication.

Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering

2015 ◽  
Vol 1731 ◽  
Author(s):  
M. Baseer Haider ◽  
Mohammad F. Al-Kuhaili ◽  
S. M. A. Durrani ◽  
Venkatesh Singaravelu ◽  
Iman Roqan
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Chemical Study ◽  
Secondary Phases ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Doped Zno

ABSTRACTThin film Ti doped ZnO (Ti-ZnO) film were grown on sapphire (0001) substrate by RF and DC magnetron sputtering. Films were grown at a substrate temperature of 250 °C with different Ti/Zn concentration. Surface chemical study of the samples was performed by X-ray photoelectron spectroscopy to determine the stoichiometry and Ti/Zn ratio for all samples. Surface morphology of the samples were studied by atomic force microscopy. X-ray diffraction was carried out to determine the crystallinity of the film. No secondary phases of TixOy was observed. We observed a slight increase in the lattice constant with the increase in Ti concentration in ZnO. No ferromagnetic signal was observed for any of the samples. However, some samples showed super-paramagnetic phase.

scholarly journals Ti–Cu Coatings Deposited by a Combination of HiPIMS and DC Magnetron Sputtering: The Role of Vacuum Annealing on Cu Diffusion, Microstructure, and Corrosion Resistance

Coatings ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1064
Author(s):  
Lina Qin ◽  
Donglin Ma ◽  
Yantao Li ◽  
Peipei Jing ◽  
Bin Huang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Photoelectron Spectroscopy ◽  
Vacuum Annealing ◽  
Copper Ions ◽  
Corrosion Performance ◽  
Dc Magnetron Sputtering ◽  
Ion Release ◽  
Cross Sectional ◽  
X Ray

Titanium-copper (Ti–Cu) coatings have attracted extensive attention in the surface modification of industrial and biomedical materials due to their excellent physical and chemical properties and biocompatibility. Here, Ti–Cu coatings are fabricated using a combination of high-power pulsed magnetron sputtering (HPPMS; also known as high power impulse magnetron sputtering (HiPIMS)) and DC magnetron sputtering followed by vacuum annealing at varied temperatures (300, 400, and 500 °C). X-ray diffraction (XRD), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS) data showed that Ti, Cu, and CuTi3 are mainly formed in the coatings before annealing, while Ti3O, Cu2O, and CuTi3 are the main compounds present in the annealed coatings. The cross-sectional TEM micrographs and corresponding EDS results provided evidence that Ti is mainly present on the surface and interfaces of the silicon substrate and the Ti–Cu coatings annealed at 500 °C, while the bulk of the coatings is enriched with Cu. The resistivity of the coatings decreased with increasing the annealing temperature from 300 to 500 °C. Based on self-corrosion current density data, the Ti–Cu coating annealed at 300 °C showed similar corrosion performance compared to the as-deposited Ti–Cu coating, while the corrosion rate increased for the Ti–Cu coatings annealed at 400 and 500 °C. Stable release of copper ions in PBS (cumulative released concentration of 0.8–1.0 μM) for up to 30 days was achieved for all the annealed coatings. Altogether, the results demonstrate that vacuum annealing is a simple and viable approach to tune the Cu diffusion and microstructure of the Ti–Cu coatings, thereby modulating their electrical resistivity, corrosion performance, and Cu ion release behavior.

The Effects of SiO, SiON on IZO Thin Film Deposited by DCMG Method

2007 ◽  
Vol 124-126 ◽  
pp. 455-458
Author(s):  
Seong Hoon Kim ◽  
Han Ki Yoon ◽  
Riichi Murakami
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Oxygen Content ◽  
Glass Substrate ◽  
Single Layer ◽  
Target Type ◽  
Dc Magnetron Sputtering ◽  
Izo Thin Film ◽  
Pet Substrate

The thin films of SiO and SiON were deposited individually by the inclination opposite target type DC magnetron sputtering equipment onto the glass substrate. And it was deposited IZO(In2O3 (90wt.%) + ZnO(10wt.%)) on those films. The effects of SiO and SiON were investigated on properties of IZO thin films. AFM images of IZO thin film included SiON film were shown smoother surfaces than that included SiO film. Multi layers of IZO were shown good properties because it have high transmissivity. Resistivity is in inverse proportion to Mobility. If it deposited SiO and SiON, generate layer of change between two layers(SiO or SiON + Substrate). Layer of change influenced resistance because Oxygen content was more than single layer of IZO. In case of using PET substrate, it influenced stronger than Glass substrate for rigid gas permeable and osmosis.

Morphology of Tantalum Nitride Thin Films Grown on Fused Quartz by Reactive High Power Impulse Magnetron Sputtering (HiPIMS)

2015 ◽  
Vol 1803 ◽  
Author(s):  
D. O. Thorsteinsson ◽  
T. K. Tryggvason ◽  
J. T. Gudmundsson
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Tantalum Nitride ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
X Ray ◽  
Fused Quartz ◽  
The Magnetic Field ◽  
Dense Films

ABSTRACTThin tantalum nitride films were grown on fused quartz by reactive high power impulse magnetron sputtering (HiPIMS) while varying the fractional N2 flow rate at fixed substrate temperature of 400°C. The film properties were compared to films grown by conventional dc magnetron sputtering (dcMS) at similar conditions. Structural characterization was carried out using X-ray diffraction and reflection methods. The HiPIMS process produces slightly less dense films than does dcMS and the surface roughness is similar for both the HiPIMS and dcMS grown films. The deposition rate for HiPIMS is up to 80 % lower than for dcMS but it can be roughly doubled by lowering the magnetic field strength by 30 %.

Optical and Tribological Properties of Silicon Carbide Thin Films Grown by Reactive DC Magnetron Sputtering

2011 ◽  
Vol 484 ◽  
pp. 145-151 ◽  
Author(s):  
Tolga Tavşanoğlu ◽  
Erdem Baskurt ◽  
Yücel Onüralp
Keyword(s):  
Magnetron Sputtering ◽  
High Speed ◽  
High Speed Steel ◽  
Gas Mixture ◽  
Microstructural Properties ◽  
Dc Magnetron Sputtering ◽  
Cross Sectional ◽  
X Ray ◽  
Sic Coatings ◽  
Sic Films

In this study, SiC films were deposited by reactive DC magnetron sputtering of high purity (99.999%) Si target in Ar/CH4 gas mixture. Three types of substrates, AISI M2 grade high speed steel, glass, and Si (100) were used in each deposition. Films were grown with different compositions at 50 oC and 250 oC by varying (0–50 %) CH4/Ar processing gas ratios. Microstructural properties of SiC films were characterized by cross-sectional FE–SEM (Field–Emission Scanning Electron Microscope) observations. XRD (X–Ray Diffractometer) results indicated that films were amorphous. Friction coefficients as low as 0.1 were obtained from SiC coatings against Al2O3 balls, according to the tribological tests. Optical investigations showed that the transparency and opacity of SiC films could easily be tailored by modifying Si and C concentrations in the coatings.

The Effect of Annealing Temperature on Structure of TiCrN Thin Film Deposited by DC Magnetron Sputtering Method

2020 ◽  
Vol 901 ◽  
pp. 31-36
Author(s):  
Adisorn Buranawong ◽  
Nirun Witit-Anun
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Chemical Compositions ◽  
Content Increase ◽  
Cross Sectional ◽  
Rutile Structure ◽  
X Ray ◽  
Annealing Temperatures ◽  
Sem Micrograph ◽  
Ray Patterns

The DC reactive magnetron sputtering method was employed to deposit Titanium Chromium Nitride (TiCrN) thin film on silicon (100) substrates. The coatings were annealed at different temperature from 700°C to 1000°C with increase step of 100 °C in air for 2 h. The crystal structure, surface morphologies, microstructure and chemical compositions were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDX). The x-ray patterns confirmed the TiO2 rutile structure with strong preferred orientation of (101) plane was appeared from 700°C. The crystallinity of film increased with the annealing temperatures. The lattice constant (a and c) were in the range of 4.565 – 4.607 Å and 2.946 – 2.956 Å. The void between grain boundaries was confirmed by FE-SEM micrograph. The cross-sectional analysis revealed that the porous structure with enhancement of thickness from 1.64 - 1.95 μm were obtained as increase annealing temperatures. The EDX results indicated that the O content increase from 0 – 60.67 At% whereas the Ti, Cr, and N contents were decreased from 43.26 - 22.40 At%, 20.65 – 2.57 At% and 51.19 – 14.36 At% through the annealing temperatures.

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