Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

A Novel Process to Form Epitaxial Si Structures With Buried Silicide

1991 ◽  
Vol 235 ◽  
Author(s):  
YU. N. Erokhin ◽  
R. Grotzschel ◽  
S. R. Oktyabrski ◽  
S. Roorda ◽  
W. Sinke ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermal Annealing ◽  
Crystalline Silicon ◽  
Rutherford Backscattering Spectrometry ◽  
Amorphous Layer ◽  
Cross Sectional ◽  
X Ray ◽  
Metal Atoms ◽  
Transmission Electron ◽  
High Metal

ABSTRACTThe interaction during low temperature thermal annealing of metal atoms from a Ni film evaporated on top of Si structures with a buried amorphous layer formed by ion implantation has been investigated. Rutherford Backscattering Spectrometry (RBS)/channeling, cross-sectional transmission electron microscopy (XTEM) and X-ray microanalysis were used to determine structures and compositions. It is shown that the combination of such silicon properties as the increased rate of silicidation reaction for amorphous silicon with respect to the crystalline one in combination with high metal atom diffusivity leads to formation of buried epitaxial Ni silicide islands at the interface between the amorphous and the top crystalline silicon layers. During thermal annealing at temperatures as low as 350° C, these islands move through the a-Si layer leaving behind epitaxially recrystallized Si.

Reaction Kinetics of Sputter-Deposited Ti On SiO2 Substrates during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
E.J. Yun ◽  
H.G. Chun ◽  
K. Jung ◽  
D.L. Kwong ◽  
S. Lee
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Kinetics Of

ABSTRACTIn this paper, the interactions of sputter-deposited Ti on SiO2 substrates during rapid thermal annealing in nitrogen at 550°C - 900°C for 10 - 60 s have been systematically studied using X-ray diffraction, Auger electron spectroscopy, transmission electron diffraction, TEM & cross-sectional TEM, and sheet resistance measurements.

Microwave Activation of Dopants & Solid Phase Epitaxy in Silicon

2007 ◽  
Vol 989 ◽  
Author(s):  
Douglas C. Thompson ◽  
J. Decker ◽  
T. L. Alford ◽  
J. W. Mayer ◽  
N. David Theodore
Keyword(s):  
Single Crystal ◽  
Microwave Heating ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Microwave System

AbstractMicrowave heating is used to activate solid phase epitaxial re-growth of amorphous silicon layers on single crystal silicon substrates. Layers of single crystal silicon were made amorphous through ion implantation with varying doses of boron or arsenic. Microwave processing occurred inside a 2.45 GHz, 1300 W cavity applicator microwave system for time-durations of 1-120 minutes. Sample temperatures were monitored using optical pyrometery. Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy were used to monitor crystalline quality in as-implanted and annealed samples. Sheet resistance readings show dopant activation occurring in both boron and arsenic implanted samples. In samples with large doses of arsenic, the defects resulting from vacancies and/or micro cluster precipitates are seen in transmission electron micrographs. Materials properties are used to explain microwave heating of silicon and demonstrate that the damage created in the implantation process serves to enhance microwave absorption.

Formation and Relaxation of Ni(Au) Disilicide

1995 ◽  
Vol 402 ◽  
Author(s):  
D. Mangelinck ◽  
P. Ga ◽  
J. M. Gay ◽  
B. Pichaud
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Lattice Parameters ◽  
Solid State Reactions ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Au Clusters ◽  
Relaxation Modes

AbstractThe formation and the relaxation of NiSi2 films with and without Au are examined by scanning electron microscopy, X-ray diffraction and Rutherford backscattering spectrometry. We studied the solid state reactions between a Ni(7 at.% Au) thin film and a Si substrate which occurs during the solid phase epitaxy before the formation of NiSi2. We show that the addition of Au to the Ni film drastically affects the silicides formation: Ni2Si and NiSi appear simultaneously and the nucleation temperature of NiSi 2 is lowered. The solubility of Au in the three silicides is limited which induces a precipitation of Au. Depending on temperature this precipitation takes various forms: Au enriched surface layer or Au clusters at inner interfaces. The films lattice parameters both parallel and perpendicular to the interface are also measured and compared to the lattice parameters of bulk samples which have been made by solidification from the melt. The relaxation modes are deduced from these measurements.

High-temperature interfacial reaction of an Al thin film with single-crystal 6H–SiC

2000 ◽  
Vol 15 (11) ◽  
pp. 2284-2287 ◽  
Author(s):  
Byung-Teak Lee ◽  
Yang-Soo Shin ◽  
Jin Hyeok Kim
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Layer Structure ◽  
Compound Layer ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Double Layer Structure ◽  
Transmission Electron ◽  
Al Thin Film

Interfacial reactions between an Al thin film and a single-crystal (001) 6H–SiC substrate were investigated using x-ray diffraction and cross-sectional transmission electron microscopy. Aluminum thin films were prepared by radio-frequency magnetron sputtering method on 6H–SiC substrates at room temperature and then annealed at various temperatures from 500 to 900 °C. A columnar-type polycrystalline Al thin film was formed on a 6H–SiC substrate in the as-deposited sample. No remarkable microstructural change, compared to the as-deposited sample, was observed in the sample annealed at 500 °C for 1 h. However, it was found that the Al layer reacted with the SiC substrate at 700 °C and formed an Al–Si–C ternary compound at the Al/SiC interface. Samples annealed at 900 °C showed a double-layer structure with an Al–Si mixed surface layer and an Al–Si–C compound layer below in contact with the substrate.

Microstructures and electrical resistivities of the RuO2 electrode on SiO2/Si annealed in the oxygen ambient

1996 ◽  
Vol 11 (11) ◽  
pp. 2681-2684 ◽  
Author(s):  
Jeong Soo Lee ◽  
Hyun Ja Kwon ◽  
Young Woo Jeong ◽  
Hyun Ha Kim ◽  
Cha Yeon Kim
Keyword(s):  
Electron Microscopy ◽  
Annealing Temperature ◽  
Columnar Structure ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Dc Sputtering ◽  
Transmission Electron ◽  
Electrical Resistivities

The electrical resistivity property of RuO2 thin films grown on the SiO2/Si substrate by reactive dc sputtering was examined in terms of microstructure using x-ray diffraction and cross-sectional transmission electron microscopy. As the samples were annealed in the oxygen ambient over the temperature range 300–700 °C, the resistivity decreased from 270 to 90 μΩcm with increasing annealing temperature. When heat treatment was performed below 500 °C, the strain which accumulated in the RuO2 layer during deposition was released without significant increase in grain size. It is thought that below 500 °C improvement in the crystallinity plays an important role in the variation of the resistivity. Although a considerable amount of growth of RuO2 grains was achieved, the columnar structure of the RuO2 layer in the as-deposited sample remained unchanged even after annealing at 700 °C. The resistivity improvement above 500 °C was driven mainly by the grain boundary annihilation.

Epitaxial BaTiO3 Thin Films on Different Substrates for Optical Waveguide Applications

1999 ◽  
Vol 597 ◽  
Author(s):  
M. Siegert ◽  
Judit G. Lisoni ◽  
C. H. Lei ◽  
A. Eckau ◽  
W. Zander ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Transmission Electron

AbstractIn the process of developing thin film electro-optical waveguides we investigated the influence of different substrates on the optical and structural properties of epitaxial BaTiO3 thin films. These films are grown by on-axis pulsed laser deposition (PLD) on MgO(100), MgAl2O4(100), SrTiO3(100) and MgO buffered A12O3(1102) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C). X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). BaTiO3 films on MgO(100) substrates show planar waveguide losses of 3 dB/cm and ridge waveguide losses of 5 dB/cm at a wavelength of 633 nm.

The Characterization Of Chemical Bath Deposited Cds On Single Crystal InP Substrates

1997 ◽  
Vol 485 ◽  
Author(s):  
G. M. Riker ◽  
M. M. Al-Jassim ◽  
F. S. Hasoon
Keyword(s):  
Electron Microscopy ◽  
Single Crystal ◽  
Surface Cleaning ◽  
Film Morphology ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Fine Grained ◽  
Transmission Electron ◽  
Cds Thin Films ◽  
Inp Substrates

AbstractWe have investigated CdS thin films as possible passivating window layers for InP. The films were deposited on single crystal InP by chemical bath deposition (CBD). The film thickness, as optically determined by ellipsometry, was varied from 500 to 840Å. The film morphology was investigated by high resolution scanning electron microscopy (SEM), whereas the film microstructure was studied by X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM). Most of the films were fine-grained polycrystalline CdS, with some deposition conditions resulting in epitaxial growth. Cross-sectional TEM examination revealed the presence of interface contaminants. The effect of such contaminants on the film morphology and microstructure was studied, and various approaches for InP surface cleaning/treatment were investigated. The epitaxial films were determined to be hexagonal on both the (111) and (100) InP substrates; however, they were heavily faulted.

Determination of Dislocation Densities in Hexagonal Close-Packed Metals using X-Ray Diffraction and Transmission Electron Microscopy

1991 ◽  
Vol 35 (A) ◽  
pp. 593-599 ◽  
Author(s):  
M. Griffiths ◽  
J.E. Winegar ◽  
J.F. Mecke ◽  
R.A. Holt
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Plastic Anisotropy ◽  
Zirconium Alloys ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hexagonal Close Packed ◽  
Transmission Electron ◽  
Dislocation Densities

AbstractX-ray diffraction (XRD) line-broadening analysis has been used to determine dislocation densities in zirconium alloys with hexagonal closepacked (hep) crystal structures and a complex distribution of dislocations reflecting the plastic, anisotropy of the material. The validity of the technique has been assessed by comparison with direct measurements of dislocation densities in deformed polycrystalline and neutron-irradiated single crystal material using transmission electron microscopy (TEM). The results show that-there is good agreement between the XRD and TEM for measurements on the deformed material whereas there is a large discrepancy for measurements on the irradiated single crystal; the XRD measurements significantly underestimating the TEM observations.

scholarly journals The Reliability Improvement of Cu Interconnection by the Control of Crystallizedα-Ta/TaNxDiffusion Barrier

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Wei-Lin Wang ◽  
Chia-Ti Wang ◽  
Wei-Chun Chen ◽  
Kuo-Tzu Peng ◽  
Ming-Hsin Yeh ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Practical Application ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Reliability Improvement ◽  
N Concentration ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Interconnection Structure

Ta/TaN bilayers have been deposited by a commercial self-ionized plasma (SIP) system. The microstructures of Ta/TaN bilayers have been systematically characterized by X-ray diffraction patterns and cross-sectional transmission electron microscopy. TaN films deposited by SIP system are amorphous. The crystalline behavior of Ta film can be controlled by the N concentration of underlying TaN film. On amorphous TaN film with low N concentration, overdeposited Ta film is the mixture ofα- andβ-phases with amorphous-like structure. Increasing the N concentration of amorphous TaN underlayer successfully leads upper Ta film to form pureα-phase. For the practical application, the electrical property and reliability of Cu interconnection structure have been investigated by utilizing various types of Ta/TaN diffusion barrier. The diffusion barrier fabricated by the combination of crystallizedα-Ta and TaN with high N concentration efficiently reduces the KRc and improves the EM resistance of Cu interconnection structure.

Sign in / Sign up

Export Citation Format

Share Document