Influence of Process Condition on the Dielectric Properties of CCTO-P(VDF-TrFE) 0-3 Composites

2011 ◽  
Vol 1312 ◽  
Author(s):  
Xiaobing Shan ◽  
Lin Zhang ◽  
Z.-Y. Cheng
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
High Dielectric Constant ◽  
Process Condition ◽  
Hot Press ◽  
Ceramic Powders ◽  
Dielectric Constant And Loss ◽  
High Dielectric ◽  
Press Time ◽  
Hot Press Process

AbstractA high dielectric constant was observed in 0-3 composites using P(VDF-TrFE) copolymer as matrix and CaCu3TiO4 (CCTO) ceramic powders as fillers with a composition of 50 vol% CCTO. CCTO-P(VDF-TrFE) 0-3 composites with a CCTO content from 0 to 50 vol% were prepared and their dielectric properties, including frequency dependence and temperature dependence of the dielectric constant and loss, were characterized. It was experimentally observed that the hot-press process, inlcuding the configuration and hot-press time, has a strong influence on the dielectric properties of the composites. Additionally, the influence of the CCTO partice size on the dielectric properties of the composites was studied.

Off Axis Growth of Strontium Titanate Films with High Dielectric Constant Tuning and Low Loss

2002 ◽  
Vol 720 ◽  
Author(s):  
Satreerat Kampangkeaw ◽  
Charles T. Rogers
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Strontium Titanate ◽  
Loss Tangent ◽  
Figure Of Merit ◽  
High Dielectric Constant ◽  
Dielectric Films ◽  
Low Loss ◽  
Dielectric Constant And Loss ◽  
High Dielectric

AbstractWe have measured the nonlinear dielectric properties of strontium titanate (STO) thin films grown on neodymium gallate (NGO) and lanthanum aluminate (LAO) substrates. The films prepared by off-axis pulsed laser deposition were characterized by their dielectric constant and loss tangent at 1 MHz and 2 GHz, and from room temperature down to 4 K. The resulting films show significant variations of dielectric properties with position of the substrates with respect to the plume axis. STO films on LAO substrates show low loss and high dielectric constant in regions near the plume axis. On the other hand, STO on NGO shows this effect only on the films grown far from the plume axis. We also obtained a figure of merit from the relative variation of the dielectric constant divided by the loss tangent in the presence of a DC electric field up to +/- 4 V/μm. Careful mapping of the plume crossection allowed us to improve the quality and reproducibility of the dielectric films, obtaining a best figure of merit at 2 GHz and 4 K close to 100 for NGO substrate but only well off axis.

High Dielectric Constant of Silver Nanowires–Epoxy Composites

2016 ◽  
Vol 848 ◽  
pp. 9-12 ◽  
Author(s):  
Yue Guang Chen ◽  
Shi Jiao Wang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
High Dielectric Constant ◽  
Volume Fraction ◽  
Silver Nanowires ◽  
Epoxy Composites ◽  
Hot Press ◽  
Forming Process ◽  
Hot Press Forming ◽  
High Dielectric

Silver nanowires–epoxy composites were prepared via cryomilling dispersion and hot-press forming process. The microstructure of the silver nanowires was studied by SEM. Dependence of dielectric properties of the composites on volume fraction of silver nanowires and frequency was investigated RF impedance material analyzer. The percolation threshold of the composites was 0.16, the value of the dielectric constant of the composite was as high as 100.

Preparation, Morphology and Dielectric Properties of Polyamide-6/Poly(Vinylidene Fluoride) Blends

2012 ◽  
Vol 496 ◽  
pp. 263-267
Author(s):  
Rui Li ◽  
Jian Zhong Pei ◽  
Yan Wei Li ◽  
Xin Shi ◽  
Qun Le Du
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Flexible Electronics ◽  
High Dielectric Constant ◽  
Vinylidene Fluoride ◽  
Volume Fraction ◽  
Polyamide 6 ◽  
Dielectric Constants ◽  
Poly Vinylidene Fluoride ◽  
High Dielectric

A novel all-polymeric material with high dielectric constant (k) has been developed by blending poly (vinylidene fluoride) (PVDF) with polyamide-6 (PA6). The dependence of the dielectric properties on frequency and polymer volume fraction was investigated. When the volume fraction of PA6 is 20%, the dielectric property is better than others. The SEM investigations suggest that the enhanced dielectric behavior originates from significant interfacial interactions of polymer-polymer. The XRD demonstrate that the PA6 and PVDF affect the crystalline behavior of each component. Furthermore, the stable dielectric constants of the blends could be tuned by adjusting the content of the polymers. The created high-k all-polymeric blends represent a novel type of material that are simple technology and easy to process, and is of relatively high dielectric constant, applications as flexible electronics.

Effect of Platinum Substitution on the Microstructures and Dielectric Relaxation of CaCu3Ti4O12 Ceramics

2013 ◽  
Vol 802 ◽  
pp. 134-138 ◽  
Author(s):  
Worawut Makcharoen
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Loss Tangent ◽  
Room Temperature ◽  
High Dielectric Constant ◽  
Ferroelectric Materials ◽  
X Ray Diffraction ◽  
High Loss ◽  
Internal Barrier Layer Capacitor ◽  
High Dielectric

The CaCu3Ti4O12(CCTO) has the advantage for the various applications especially for capacitive elements in microelectronic devices over the ferroelectric materials including BaTiO3. CCTO is a ceramic compound with a high dielectric constant but it has a high loss tangent at room temperature. In this work, the Influences of PtO2doping on the dielectric properties of CaCu3Ti4O12(CCTO) ceramics were investigate. The ceramics CCTO and PtO2doping CCTO were studied by X- ray diffraction, scanning electron microscopy. The dielectric properties have been measured as a function of temperature and frequency range 0.1 - 500 kHz. The XRD shows the CCTO structure does not changes after doping with platinum. The results show that PtO2doped can reduce the mean grain sizes of CCTO, but the dielectric constant still remained a height. The samples of 2.0 mol% Pt-doped have exhibited high dielectric constant of about 22,000 and the loss tangent about 0.7 at room temperature and frequency at 10 kHz. The reduced of the loss tangent could be interpreted with the internal barrier layer capacitor model (IBLC)

Processing and the Microstructure of SrTiO3-Based Bl Capacitors using Pb(Fe, W)O3 Ferroelectrics

1989 ◽  
Vol 155 ◽  
Author(s):  
Makoto Kuwabara
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Grain Boundaries ◽  
Strontium Titanate ◽  
Barrier Layer ◽  
High Dielectric Constant ◽  
Ferroelectric Materials ◽  
New Type ◽  
High Dielectric ◽  
Very High

ABSTRACTA preliminary experiment was conducted to prepare semiconducting strontium titanate-based internal barrier layer capacitors with ferroelectric Pb(Fe, W)O3 forming insulating layers along the grain boundaries. Processing, microstructure and the dielectric properties of this new type of BL capacitors are described. The idea to obtain this type of BL capacitors with a very high dielectric constant may be realized when the ferroelectric materials can uniformly be diffused along the grain boundaries by using a more sophisticated processing of the second firing.

Sign in / Sign up

Export Citation Format

Share Document