Synthesis of Resistive Memory Oxides by Ion Implantation

2012 ◽  
Vol 1430 ◽  
Author(s):  
S.M. Bishop ◽  
Z.P. Rice ◽  
B.D. Briggs ◽  
H. Bakhru ◽  
N.C. Cady
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Tantalum Oxide ◽  
Switching Behavior ◽  
Resistive Memory ◽  
Bipolar Resistive Switching ◽  
Technology Scaling ◽  
Oxygen Implantation ◽  
Current Voltage ◽  
The Difference

ABSTRACTIn this work, we report on the use ion of implantation to synthesize resistive memory oxides. The surface of copper thin films was converted to copper oxide using oxygen implantation. Devices fabricated from the copper oxide (CuxO) layers exhibited unipolar switching behavior without the need for a forming voltage. Technology scaling was demonstrated by oxygen implanting copper damascene vias. Unipolar switching was observed in via-based devices down to 48 nm. The current-voltage data of devices scaled from 100 μm to 48 nm suggests that the RESET transition is related to localized Joule heating. Tantalum oxide (TaxOy) was also created by oxygen implantation but exhibited bipolar resistive switching. Analysis of the conduction suggests that the difference between the two resistance states in these devices is largely due to a lowering of the Pt-TaxOy Schottky barrier.

Fabrication and Characterization of Copper Oxide Resistive Memory Devices

2011 ◽  
Vol 1337 ◽  
Author(s):  
S.M. Bishop ◽  
B.D. Briggs ◽  
Z.P. Rice ◽  
S. Addepalli ◽  
N.R. McDonald ◽  
...  
Keyword(s):  
Copper Oxide ◽  
Electrical Contact ◽  
Switching Behavior ◽  
Memory Devices ◽  
Plasma Oxidation ◽  
Resistive Memory ◽  
Oxide Interface ◽  
Bipolar Switching ◽  
Current Voltage

ABSTRACTThree synthesis techniques have been explored as routes to produce copper oxide for use in resistive memory devices (RMDs). The major results and their impact on device current-voltage characteristics are summarized. The majority of the devices fabricated from thermally oxidized copper exhibited a diode-like behavior independent of the top electrode. When these devices were etched to form mesa structures, bipolar switching was observed with set voltages <2.5 V, reset voltages <(-1) V and ROFF/RON ∼103-104. Bipolar switching behavior was also observed for devices fabricated from copper oxide synthesized by RT plasma oxidation (ROFF/RON up to 108). Voiding at the copper-copper oxide interface occurred in films produced by thermal and plasma oxidation performed at ≥200°C. The copper oxide synthesized by reactive sputtering had large areas of open volume in the microstructure; this resulted in short circuited devices because of electrical contact between the bottom and top electrodes. The results for fabricating copper oxide into ≤100 nm features are also discussed.

scholarly journals Effects of the thickness on resistive switching characteristics of CrOx thin films

2016 ◽  
Vol 19 (2) ◽  
pp. 92-100
Author(s):  
Ngoc Kim Pham ◽  
Thang Bach Phan ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Resistive Switching ◽  
High Reliability ◽  
Switching Behavior ◽  
Ftir Analysis ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Structure Surface ◽  
Switching Characteristics

In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.

scholarly journals Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods

Materials ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 2755
Author(s):  
Tzu-Han Su ◽  
Ke-Jing Lee ◽  
Li-Wen Wang ◽  
Yu-Chi Chang ◽  
Yeong-Her Wang
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Sol Gel ◽  
Switching Behavior ◽  
Resistive Memory ◽  
Scanning Electron Microscope Image ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Electron Microscope Image ◽  
Scanning Electron

To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO structure exhibits forming-free and bipolar resistive switching behaviors. MZN NRs have relatively higher ON/OFF ratio and better uniformity compared with MZN thin film. The superior properties of MZN NRs can be attributed to its distinct geometry, which leads to the formation of straight and extensible conducting filaments along the direction of MZN NR. The results suggest the possibility of developing sol–gel NR-based resistive memory devices.

Resistance Switching Characteristics in Zirconium Oxide

2013 ◽  
Vol 573 ◽  
pp. 151-154
Author(s):  
Chun Hung Lai ◽  
Hao Hsiang Hsu ◽  
Yi Mu Lee ◽  
Hsi Wen Yang
Keyword(s):  
Zirconium Oxide ◽  
Nonvolatile Memory ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Switching Voltage ◽  
Bipolar Resistive Switching ◽  
Current Voltage ◽  
Switching Characteristics ◽  
Sandwiched Structure ◽  
Highly Uniform

The resistance switching behavior in sputtered Ti/ZrO2/Pt sandwiched structure was investigated for nonvolatile memory application. Multiple current-voltage measurements reveal highly uniform distribution of the conduction current and switching voltage. This bipolar resistive switching driven by bias of proper magnitude and polarity is interpreted by filament model. The reset threshold increases with the compliance setting imposed on the turn-on transition, while the switching currents in high and low resistance states are not varied for different top-electrode areas. Both characteristics are ascribed to the electro-chemical reactions of field-induced reduction-oxidation processes.

A Comparative Study of Electrical Switching Behavior of Certain Tellurium Based Chalcogenide Thin Films for Phase Change Memory (PCM) Applications

2010 ◽  
Vol 123-125 ◽  
pp. 1207-1210
Author(s):  
Chandasree Das ◽  
G. Mohan Rao ◽  
S. Asokan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Switching Behavior ◽  
Flash Evaporation ◽  
Electron Microscopic ◽  
Electrical Switching ◽  
Memory Switching ◽  
Three Samples ◽  
Electron Microscopic Image ◽  
The Difference

This work describes the electrical switching behavior of three telluride based amorphous chalcogenide thin film samples, Al-Te, Ge-Se-Te and Ge-Te-Si. These amorphous thin films are made using bulk glassy ingots, prepared by conventional melt quenching technique, using flash evaporation technique; while Al-Te sample has been coated in coplanar electrode geometry, Ge-Se-Te and Ge-Te-Si samples have been deposited with sandwich electrodes. It is observed that all the three samples studied, exhibit memory switching behavior in thin film form, with Ge-Te-Si sample exhibiting a faster switching characteristic. The difference seen in the switching voltages of the three samples studied has been understood on the basis of difference in device geometry and thickness. Scanning electron microscopic image of switched region of a representative Ge15Te81Si4 sample shows a structural change and formation of crystallites in the electrode region, which is responsible for making a conducting channel between the two electrodes during switching.

Impact of interfaces on bipolar resistive switching behavior in amorphous Ge–Sb–Te thin films

2020 ◽  
Vol 53 (18) ◽  
pp. 184002 ◽  
Author(s):  
Hagen Bryja ◽  
Christoph Grüner ◽  
Jürgen W Gerlach ◽  
Mario Behrens ◽  
Martin Ehrhardt ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching

scholarly journals The Influence of Adsorption Small Molecules Atrazine on Nonvolatile Resistive Switching Behavior in Co-Al Layered Double Hydroxide Films

2020 ◽  
Author(s):  
Yanmei Sun ◽  
Li Li ◽  
Keying Shi
Keyword(s):  
Thin Films ◽  
Small Molecules ◽  
Memory Effect ◽  
Resistive Switching ◽  
Casting Process ◽  
Switching Behavior ◽  
Impregnation Method ◽  
Resistive Switching Behavior ◽  
Glass Substrates ◽  
Current Voltage

Abstract Co-Al layered double hydroxides (LDHs) thin films were prepared by drop-casting process on ITO coated glass substrates. And then the small molecule atrazine was adsorbed on the Co-Al LDHs film by impregnation method. Current-voltage characteristics revealed nonvolatile resistive switching in Co-Al LDHs adsorbed atrazine films. The Influence of adsorption small molecules atrazine on nonvolatile resistive switching behavior in Co-Al LDHs Film has been investigated. By varying the atrazine adsorbed content in Co-Al LDHs thin films, the nonvolatile resistive switching behavior of device could be adjusted in a controlled way. Entirely different nonvolatile resistive switching characteristic, such as write-once read-many-times memory effect and rewritable memory effect are discriminable by the current-voltage curves.

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