The Influence of Adsorption Small Molecules Atrazine on Nonvolatile Resistive Switching Behavior in Co-Al Layered Double Hydroxide Films

Abstract Co-Al layered double hydroxides (LDHs) thin films were prepared by drop-casting process on ITO coated glass substrates. And then the small molecule atrazine was adsorbed on the Co-Al LDHs film by impregnation method. Current-voltage characteristics revealed nonvolatile resistive switching in Co-Al LDHs adsorbed atrazine films. The Influence of adsorption small molecules atrazine on nonvolatile resistive switching behavior in Co-Al LDHs Film has been investigated. By varying the atrazine adsorbed content in Co-Al LDHs thin films, the nonvolatile resistive switching behavior of device could be adjusted in a controlled way. Entirely different nonvolatile resistive switching characteristic, such as write-once read-many-times memory effect and rewritable memory effect are discriminable by the current-voltage curves.

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Fabrication and polarization-modulated resistive switching behavior of predominantly (110)-oriented BiFeO3 thin films on indium tin oxide/glass substrates

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-014-1720-x ◽

2014 ◽

Vol 25 (3) ◽

pp. 1269-1274 ◽

Cited By ~ 8

Author(s):

Qiujuan Man ◽

Wen Sun ◽

Feng Yang ◽

Chengcheng Qiu ◽

Yuanyuan Zhao ◽

...

Keyword(s):

Thin Films ◽

Resistive Switching ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Switching Behavior ◽

Oxide Glass ◽

Resistive Switching Behavior ◽

Glass Substrates ◽

Bifeo3 Thin Films ◽

Indium Tin Oxide Glass

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Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ◽

10.1109/edtm50988.2021.9420947 ◽

2021 ◽

Author(s):

Xiaohan Wu ◽

Ruijing Ge ◽

Yuqian Gu ◽

Emmanuel Okogbue ◽

Jianping Shi ◽

...

Keyword(s):

Memory Effect ◽

Resistive Switching ◽

Random Access ◽

Random Access Memory ◽

Switching Behavior ◽

Access Memory ◽

Resistive Switching Behavior ◽

Metal Dichalcogenides

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Effects of the thickness on resistive switching characteristics of CrOx thin films

Science and Technology Development Journal ◽

10.32508/stdj.v19i2.794 ◽

2016 ◽

Vol 19 (2) ◽

pp. 92-100

Author(s):

Ngoc Kim Pham ◽

Thang Bach Phan ◽

Vinh Cao Tran

Keyword(s):

Thin Films ◽

Surface Morphology ◽

Resistive Switching ◽

High Reliability ◽

Switching Behavior ◽

Ftir Analysis ◽

Resistive Switching Behavior ◽

Bipolar Resistive Switching ◽

Structure Surface ◽

Switching Characteristics

In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.

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Enhanced bipolar resistive switching behavior in polar Cr-doped barium titanate thin films without electro-forming process

AIP Advances ◽

10.1063/1.5004232 ◽

2017 ◽

Vol 7 (12) ◽

pp. 125115 ◽

Cited By ~ 2

Author(s):

Atul Thakre ◽

Ashok Kumar

Keyword(s):

Thin Films ◽

Barium Titanate ◽

Resistive Switching ◽

Switching Behavior ◽

Resistive Switching Behavior ◽

Forming Process ◽

Bipolar Resistive Switching ◽

Doped Barium Titanate

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The Resistive Switching Behavior of ZnO Films Depending on Li Dopant Concentration and Electrode Materials

Advances in Science and Technology ◽

10.4028/www.scientific.net/ast.99.75 ◽

2016 ◽

Vol 99 ◽

pp. 75-80

Author(s):

Arsen Igityan ◽

Yevgenia Kafadaryan ◽

Natella Aghamalyan ◽

Silva Petrosyan

Keyword(s):

Resistive Switching ◽

Electrode Materials ◽

Switching Behavior ◽

Zno Films ◽

Lithium Content ◽

Resistive Switching Behavior ◽

Bipolar Resistive Switching ◽

Glass Substrates ◽

Ohmic Behavior ◽

Doped Zno

Lithium (0, 1.0 and 10 at.%)-doped ZnO (LiZnO) polycrystalline thin films were deposited on Pt/SiO2, LaB6/Al2O3, Au/SiO2 and 20 at.% fluorine-doped SnO2(FTO)/glass substrates by an e-beam evaporation method. Metal/LiZnO/Metal sandwich structures were constructed by depositing different top electrodes (Ag, Al and Au) to find memristive characteristics depending on the lithium content and electrode materials. Compared with undoped and 1%Li-doped ZnO devices, the 10 at.%Li-doped ZnO (10LiZnO) device exhibits resistive switching memory. The Ag/10LiZnO/Pt and Ag/10LiZnO/LaB6 memory devices exhibit unipolar resistive switching behavior while bipolar resistive switching in Ag/10LiZnO/FTO, Au/10LiZnO/FTO and Al/10LiZnO/LaB6 structures is revealed. The dominant conduction mechanisms are explained in terms of Ohmic behavior, space charge limited current (SCLC) and Schottky emission for the URS and BRS behaviors.

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