Effect of O2/Ni ratio on structure and surface morphology of atmospheric pressure MOCVD grown NiO thin films

2013 ◽  
Vol 1577 ◽  
Author(s):  
Teuku M. Roffi ◽  
Motohiko Nakamura ◽  
Kazuo Uchida ◽  
Shinji Nozaki

ABSTRACTEffect of oxygen to nickel molar ratio (O2/Ni) on the crystallinity of atmospheric pressure metal organic chemical vapor deposition (APMOCVD) grown NiO at 500°C is reported. X-ray diffraction (XRD) analysis including grazing incident angle θ of 0.6°, θ-2θ, ɸ and rocking curve scan are employed for crystallographic characterization. Furthermore, surface roughness is studied by atomic force microscopy (AFM). No evidence of diffraction peaks in X-ray grazing incident angle measurement confirms that all the grown NiO films are well oriented along a certain direction. θ-2θ scan results further indicate that the samples are highly oriented only along [111] direction on (0001) sapphire substrates. The analysis of full width at half maximum (FWHM) of rocking curve scan of (111) plane shows that higher O2/Ni ratio results in better crystallinity. The best crystallinity is achieved with FWHM as low as 0.106° at (111) rocking curve scan corresponding to 82.57nm grain size. AFM measurement shows that NiO films grown with higher O2/Ni ratio have smoother surface morphology.

2015 ◽  
Vol 1085 ◽  
pp. 12-16
Author(s):  
Rustam Hairullin ◽  
Svetlana Dorovskikh

In this work the effect of substrate and vaporization temperatures on the structural parameters (sizes of coherent scattering region, values of strain), phase and chemical composition, surface morphology of Co films is revealed. Co films were deposited on Si (100) substrates by Metal-organic chemical vapor deposition using the diiminate complex Co (N’acN’ac)2 as a precursor. The sizes of coherent scattering region, values of strain and phase composition of Co films were determined by the X-ray diffraction analysis. The chemical composition was identified by the Energy-dispersive X-ray spectroscopy. The surface morphology of Co films was investigated by scanning electron microscope. It is found that the variation of deposition conditions allows us widely to change structural parameters and chemical composition of Co films.


2021 ◽  
Vol 56 (15) ◽  
pp. 9274-9286
Author(s):  
Ronny Fritzsche ◽  
Dietrich R. Zahn ◽  
Michael Mehring

AbstractThe deposition of thin germanium films by atmospheric pressure metal organic chemical vapor deposition at temperatures below 400 °C on substrates such as silicon wafers, float glass, and polyimide (Kapton®) using the diorganogermanes GeH2Cp4M2 and GeH2Cp*2 as molecular precursors is described. The deposition rates and thus the layer thicknesses can be varied by temperature and time to give layers with a thickness in the nanometer range. The homogeneity and roughness of the deposited films were analyzed by means of atomic force microscopy measurements showing the formation of smooth and uniform surfaces with roughnesses of the films in the range of (1 ± 0.15) nm to (4.5 ± 1.5) nm. Films with thicknesses between 50 and 750 nm were deposited and analyzed by Raman spectroscopy, vis–NIR spectroscopy, electron microscopy, energy dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). The as-deposited films are composed of amorphous germanium containing approximately 10% of carbon. Using Kapton® as a substrate highly flexible films were obtained.


2013 ◽  
Vol 331 ◽  
pp. 572-577 ◽  
Author(s):  
Jin Shun Yue ◽  
Ying Gao ◽  
Guo Hua Zhang ◽  
Yi Liu

The growths of AlN and AlGaN materials were carried out in a home-built metal organic chemical vapor deposition (MOCVD) system. The AlN template was characterized by X-ray diffraction (XRD) and it showed the full width at half magnitude (FWHM) of the x-ray (002) scan rocking curve was only 28 arc seconds, while the FWHM of (102) plane was 252 arc seconds. The results suggested a high quality epitaxial material was obtained. Subsequently, an AlGaN-based violet LED was designed on this template by using AlGaN material as the base. The Al composition of electronic blocking layer (EBL) was optimized. By a quick on-wafer electroluminescence (EL) test, it was demonstrated that the output light intensity of the new structure was at least 15% stronger in comparison to that of the traditional GaN-based violet LED. Finally, fully packaged LEDs were fabricated and the luminous power of the new structure was measured by Spherical integrated system. It was confirmed that a 43% increase of the output power can be obtained.


1992 ◽  
Vol 242 ◽  
Author(s):  
W. L. Ahlgren ◽  
S. Sen ◽  
S. M. Johnson ◽  
W. H. Konkel ◽  
J. A. Vigil ◽  
...  

ABSTRACTEpitaxial and bulk ZnSe of good structural perfection have been grown by vapor-phase techniques. Epitaxial undoped ZnSe layers were grown by metal-organic chemical vapor deposition (MOCVD) on GaAs {100} substrates in a horizontal-flow quartz reactor chamber. Conventional pyrolytic growth at 450°C was used, with diethyl zinc (DEZn) and diethyl selenium (DESe) reactants transported in hydrogen carrier gas.Layers with smooth surface morphology and very good crystal structure were obtained, with no evidence of gas-phase pre-reaction. Sharp electron channeling patterns produced in the scanning electron microscope (SEM) indicated that {100}-oriented ZnSe layers were grown on (100) GaAs surfaces, as expected. X-ray rocking-curve analysis with a silicon four-crystal monochrom-ator gave full-width at half-maximum (FWHM) line widths of 165 to 180 arc-sec for layers 2.5 to 3.0 μm thick, better than values for MOCVD-grown ZnSe/GaAs reported to date in the literature known to us. Cathodoluminescence (CL) imaging in the SEM showed significant defect substructure in the layers, probably due to lattice-misfit dislocations in the interface region. Bright blue CL emission from the layers was observed in the SEM at both 77K and room temperature, indicating the dominance of radiative recombination in the material.Bulk ZnSe crystals were grown using a physical vapor transport technique. The crystals, a few millimeters on a side, had fully developed crystal facets, predominantly {110(-oriented. X-ray rocking-curve analysis gave FWHM values of about 19 arc-sec, indicating excellent structural perfection.


1987 ◽  
Vol 102 ◽  
Author(s):  
Altaf H. Khan ◽  
Jorge J. Santiago

ABSTRACTA simple and easily expandable atmospheric pressure MOCVD (metal organic chemical vapor deposition) reactor for the growth of germanium films is proposed and implemented. It employs a resistively heated horizontal quartz reaction chamber. The organometallic compound tetramethylgermanium (TMGe) is used as the germanium source, and hydrogen as the carrier gas. Using this reactor, epitaxial films of germanium on <111> germanium substrates were grown at 550-650°C. The growth rate was found to increase with temperature. The single crystallinity of these films was evaluated by x-ray rocking curves, and the interface strain between the film and substrate was found to be less than 1%. These Ge/Ge samples have the same morphology as the bare substrate and their sheet resistance is 30% higher than the bare substrate value.


1990 ◽  
Vol 5 (6) ◽  
pp. 1169-1175 ◽  
Author(s):  
A. D. Berry ◽  
R. T. Holm ◽  
M. Fatemi ◽  
D. K. Gaskill

Films containing the metals copper, yttrium, calcium, strontium, barium, and bismuth were grown by organometallic chemical vapor deposition (OMCVD). Depositions were carried out at atmospheric pressure in an oxygen-rich environment using metal beta-diketonates and triphenylbismuth. The films were characterized by Auger electron spectroscopy, Nomarski and scanning electron microscopy, and x-ray diffraction. The results show that films containing yttrium consisted of Y2O3 with a small amount of carbidic carbon, those with copper and bismuth were mixtures of oxides with no detectable carbon, and those with calcium, strontium, and barium contained carbonates. Use of a partially fluorinated barium beta-diketonate gave films of BaF2 with small amounts of BaCO3.


2018 ◽  
Vol 667 ◽  
pp. 48-54
Author(s):  
Adreen Azman ◽  
Ahmad Shuhaimi ◽  
Al-Zuhairi Omar ◽  
Anas Kamarundzaman ◽  
Muhammad Imran Mustafa Abdul Khudus ◽  
...  

2016 ◽  
Vol 5 (2) ◽  
pp. 56
Author(s):  
Keiji Komatsu ◽  
Pineda Marulanda David Alonso ◽  
Nozomi Kobayashi ◽  
Ikumi Toda ◽  
Shigeo Ohshio ◽  
...  

<p class="1Body">MgO films were epitaxially grown on single crystal MgO substrates by atmospheric-pressure chemical vapor deposition (CVD). Reciprocal lattice mappings and X-ray reflection pole figures were used to evaluate the crystal quality of the synthesized films and their epitaxial relation to their respective substrates. The X-ray diffraction profiles indicated that the substrates were oriented out-of-plane during MgO crystal growth. Subsequent pole figure measurements showed how all the MgO films retained the substrate in-plane orientations by expressing the same pole arrangements. The reciprocal lattice mappings indicated that the whisker film showed a relatively strong streak while the continuous film showed a weak one. Hence, highly crystalline epitaxial MgO thin films were synthesized on single crystal MgO substrates by atmospheric-pressure CVD.</p>


2007 ◽  
Vol 1040 ◽  
Author(s):  
Hiroaki Yokoo ◽  
Naoki Wakiya ◽  
Naonori Sakamoto ◽  
Takato Nakamura ◽  
Hisao Suzuki

AbstractWe have grown indium nitride (InN) films using In buffer layer on an a-plane sapphire substrate under atmospheric pressure by halide CVD (AP-HCVD). Growth was carried out by two steps: deposition In buffer layer at 900 °C and subsequent growth of InN layer at 650 °C. In order to compare, we also grown InN films on an a-plane sapphire. The InN films are investigated on crystal quality, surface morphology and electrical property using high-resolution X-ray diffraction (HR-XRD), X-ray pole figure, scanning electron microscope (SEM), Hall measurement. The results show that the crystal quality, surface morphology and electrical property of InN films are improved by using In buffer layer.


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