Microstructural Changes in Co Films Depending on MOCVD Conditions

2015 ◽  
Vol 1085 ◽  
pp. 12-16
Author(s):  
Rustam Hairullin ◽  
Svetlana Dorovskikh
Keyword(s):  
Chemical Composition ◽  
Surface Morphology ◽  
Structural Parameters ◽  
Chemical Vapor ◽  
Coherent Scattering ◽  
Coherent Scattering Region ◽  
Organic Chemical ◽  
X Ray ◽  
Metal Organic ◽  
Phase And Chemical Composition

In this work the effect of substrate and vaporization temperatures on the structural parameters (sizes of coherent scattering region, values of strain), phase and chemical composition, surface morphology of Co films is revealed. Co films were deposited on Si (100) substrates by Metal-organic chemical vapor deposition using the diiminate complex Co (N’acN’ac)2 as a precursor. The sizes of coherent scattering region, values of strain and phase composition of Co films were determined by the X-ray diffraction analysis. The chemical composition was identified by the Energy-dispersive X-ray spectroscopy. The surface morphology of Co films was investigated by scanning electron microscope. It is found that the variation of deposition conditions allows us widely to change structural parameters and chemical composition of Co films.

Evidence of stacking-fault distribution along an InAs nanowire using micro-focused coherent X-ray diffraction

2008 ◽  
Vol 41 (2) ◽  
pp. 272-280 ◽  
Author(s):  
Virginie Chamard ◽  
Julian Stangl ◽  
Stephane Labat ◽  
Bernhard Mandl ◽  
Rainer T. Lechner ◽  
...  
Keyword(s):  
Bulk Material ◽  
Structural Parameters ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Synchrotron Source ◽  
X Ray ◽  
Metal Organic ◽  
Phase Sensitive ◽  
The Wire

InAs nanowire samples grown by metal-organic chemical vapor deposition present a significant amount of wurtzite structure, while the zincblende lattice is known to be the stable crystal structure for the bulk material. The question of the wurtzite distribution in the sample is addressed using phase-sensitive coherent X-ray diffraction with a micro-focused beam at a synchrotron source. The simultaneous investigation of the wurtzite 10\bar{1}0, 20\bar{2}0 and 30\bar{3}0 reflections performed on a bunch of single wires shows unambiguously that the wurtzite contribution is a result of stacking faults distributed along the wire. Additional simulations lead to adjustments of the wire structural parameters, such as the wurtzite content, the strain distribution, the wire diameters and their respective orientations.

Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology

2018 ◽  
Vol 667 ◽  
pp. 48-54
Author(s):  
Adreen Azman ◽  
Ahmad Shuhaimi ◽  
Al-Zuhairi Omar ◽  
Anas Kamarundzaman ◽  
Muhammad Imran Mustafa Abdul Khudus ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Enhanced Surface

Synthesis and Properties of Sb Layered Te/Cd Stack Prepared by Elemental Stack Method

2012 ◽  
Vol 488-489 ◽  
pp. 76-81 ◽  
Author(s):  
Subramani Shanmugan ◽  
Mutharasu Devarajan ◽  
Kamarulazizi Ibrahim
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Surface Morphology ◽  
Shape Analysis ◽  
Structural Parameters ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrical Studies ◽  
Sb Doping ◽  
Elemental Layer

Sb layered Te/Cd thin films have been prepared by using Stacked Elemental Layer (SEL) method. The presence of mixed phases (CdTe and Sb2Te3) in the films was confirmed by the x-ray diffraction technique. The calculated structural parameters demonstrated the feasibility of Sb doping via SEL method. The topographical and electrical studies of the synthesized thin films depicted the influence of Sb on both surface morphology and conductivity. The values of conductivity of the annealed films were in between 2 x 10-3 and 175 x 10-2 Scm-2. A desired chemical composition of films was confirmed from spectrum shape analysis using energy dispersive x-ray.

Microstructural Characterization of GaN Grown on SiC

2019 ◽  
Vol 25 (6) ◽  
pp. 1383-1393
Author(s):  
Sabyasachi Saha ◽  
Deepak Kumar ◽  
Chandan K. Sharma ◽  
Vikash K. Singh ◽  
Samartha Channagiri ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Raman Spectroscopy ◽  
Surface Morphology ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Organic Chemical ◽  
Nucleation Layer ◽  
Transmission Electron ◽  
Vapor Deposition Technique ◽  
Metal Organic

AbstractGaN films have been grown on SiC substrates with an AlN nucleation layer by using a metal organic chemical vapor deposition technique. Micro-cracking of the GaN films has been observed in some of the grown samples. In order to investigate the micro-cracking and microstructure, the samples have been studied using various characterization techniques such as optical microscopy, atomic force microscopy, Raman spectroscopy, scanning electron microscopy and transmission electron microscopy (TEM). The surface morphology of the AlN nucleation layer is related to the stress evolution in subsequent overgrown GaN epilayers. It is determined via TEM evidence that, if the AlN nucleation layer has a rough surface morphology, this leads to tensile stresses in the GaN films, which finally results in cracking. Raman spectroscopy results also suggest this, by showing the existence of considerable tensile residual stress in the AlN nucleation layer. Based on these various observations and results, conclusions or propositions relating to the microstructure are presented.

Investigation of Oxygen Vacancies in Micro-Patterned PZT Thin Films Using Raman Spectroscopy

2009 ◽  
Vol 421-422 ◽  
pp. 135-138
Author(s):  
Ken Nishida ◽  
Minoru Osada ◽  
Shintaro Yokoyama ◽  
Takafumi Kamo ◽  
Takashi Fujisawa ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Oxygen Vacancies ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Vapor Phase Deposition ◽  
Pzt Films ◽  
Metal Organic

Micro-patterned Pb(Zr,Ti)O3 (PZT) films with dot-pattern were grown by metal organic chemical vapor phase deposition (MOCVD). Micro-patterned Pb(Zr,Ti)O3 (PZT) films were formed on dot-patterned SrRuO3 (SRO) buffer layer that was prepared by MOCVD through the metal mask on (111)Pt/Ti/SiO2/Si substrate. The orientation of dot-patterned PZT films was ascertained by the micro-beam x-ray diffraction (XRD) and their crystallinity was characterized by Raman spectroscopy. It was found that PZT films were oriented to (111) on dot-pattern, while (100)/(001) out of dot-pattern and the amount of oxygen vacancies at the circumference of the dot-pattern were larger than that of center of dot-pattern.

Metal-Organic Chemical Vapor Deposition of Zn-In-Sn-O and Ga-In-Sn-O Transparent Conducting Oxide Thin Films

1999 ◽  
Vol 607 ◽  
Author(s):  
A. Wang ◽  
N.L. Edleman ◽  
J.R. Babcock ◽  
T.J. Marks ◽  
M.A. Lane ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Vapor Deposition ◽  
Carrier Density ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray ◽  
Sn Doping ◽  
Transparent Conducting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractThe metal-organic chemical vapor deposition (MOCVD) technique has been successfully applied for growth of Sn-doped transparent, conducting Zn-In-O and Ga-In-O films using Sn(acac)2, In(dpm)3, Ga(dpm)3, and Zn(dpm)2, as volatile precursors. The 25 °C electrical conductivity of the as-grown films is as high as 1030 S/cm (n-type, carrier density N = 4.5 × 1020 cm−3, mobility µ = 14.3 cm2/V•s) for the Zn-In-O series and 700 S/cm (n-type, N = 8.1 × 1019 cm−3, µ = 55.2 cm2/V•s) for the Ga-In-O series. After Sn-doping, the Zn-In-O series exhibits 25 'C electrical conductivities as high as 2290 S/cm with a higher carrier mobility, while the Ga-InO series exhibits higher electrical conductivity (3280 S/cm at 25 °C) and much higher carrier density, but with diminished mobility. All films show broader optical transparency windows than that of commercial ITO films. Reductive annealing, carried out at 400-425 °C in a flowing gas mixture of H2(4%) and N2, results in increased carrier density and mobility as high as 64.6 cm2/V•s for films without Sn doping, but lowered carrier density for the Sn-doped films. X-ray diffraction, transmission electron microscopy, micro diffraction, and high-resolution X-ray analysis show that all films with good conductivity have cubic, homogeneously doped In2O3-like crystal structures.

Improved Resistivity of GaN with Partially Mg-Doped Grown on Si(111) Substrates by MOCVD

2012 ◽  
Vol 442 ◽  
pp. 16-20
Author(s):  
Yong Wang ◽  
Nai Sen Yu ◽  
Ming Li ◽  
Kei May Lau
Keyword(s):  
Surface Morphology ◽  
Buffer Layer ◽  
Chemical Vapor ◽  
High Resistivity ◽  
Organic Chemical ◽  
Good Surface ◽  
Metal Organic ◽  
Dc Current ◽  
Gan Buffer Layer ◽  
Mg Doped

The continuous 1.0 µm GaN epilayers with and without partially Mg-doped were grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD). The DC current-voltage (I-V), time-of-flying secondary ion mass spectrometer (ToF-SIMS) and atomic force microscope (AFM) measurements were employed for comparison to characterize surface morphology and resistivity of GaN buffer layer with and without partially Mg-doped. The sample of 1.0 µm GaN epilayer with partially Mg-doped shows much higher resistivity than sample without Mg-doped, which indicates the partially Mg doping in 1.0 µm GaN epilayer can effectively increase the resistivity of GaN grown on Si (111) substrates. As a result, the high resistivity GaN buffer layer with good surface morphology is achieved in the partially Mg-doped GaN buffer layer.

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