Application of Nitrogen-Doped Nanocrystalline Diamond Film on Partially Stabilized Zirconia for Pulverization Disk

2014 ◽  
Vol 1645 ◽  
Author(s):  
Kazuki Shiokawa ◽  
Takanori Mori ◽  
Atsushi Naka ◽  
Takehiko Matsumura ◽  
Tetsuya Suzuki
Keyword(s):  
Single Crystal ◽  
Adhesion Strength ◽  
Photoelectron Spectroscopy ◽  
Nanocrystalline Diamond ◽  
Stabilized Zirconia ◽  
Partially Stabilized Zirconia ◽  
Nitrogen Doped ◽  
As Doping ◽  
Single Crystal Diamond ◽  
Alternative Material

ABSTRACTWe report here partially stabilized zirconia (PSZ) matrix deposited with nanocrystalline diamond (NCD) films on its surface as an alternative material for pulverization disk with a potential of substituting high cost synthetic single crystal diamond. The deposition of NCD films on PSZ improved the characterization of the desorption-oxygen from PSZ matrix and enhanced the poor adhesion strength between NCD film and PSZ when N2 was used as doping gas. The results for X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy confirmed that with increasing N2 flow rate, nitrogen and desorption-oxygen were incorporated into film. The adhesion test and the pulverization test showed that enhancement in the adhesion strength as well as in the pulverization performance with increasing nitrogen and oxygen concentration in the NCD films. The results proposed to substitute a synthetic single crystal diamond with PSZ by coating nitrogen-doped NCD film.

On The Optimized Nucleation of Near-Single-Crystal Cvd Diamond Film

1995 ◽  
Vol 416 ◽  
Author(s):  
L. C. Chen ◽  
C. C. Juan ◽  
J. Y. Wu ◽  
K. H. Chen ◽  
J. W. Teng
Keyword(s):  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Morphological Evolution ◽  
Present Report ◽  
Ex Situ ◽  
Nucleation Density ◽  
Induced Current ◽  
Current Time ◽  
Single Crystal Diamond

ABSTRACTNear-single-crystal diamond films have been obtained in a number of laboratories recently. The optimization of nucleation density by using a bias-enhanced nucleation (BEN) method is believed to be a critical step. However, the condition of optimized nucleation has never been clearly delineated. In the present report, a novel quantitative technique was established to monitor the nucleation of diamond in-situ. Specifically, the induced current was measured as a function of nucleation time during BEN. The timedependence of induced current was studied under various methane concentrations as well as substrate temperatures. The optimized nucleation condition can be unambiguously determined from the current-time plot. Besides the in-situ current probe, ex-situ x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) were also used to investigate the chemical and morphological evolution. Characteristic XPS and AFM features of optimized nucleation is discussed.

Nitriding of yttria-stabilized zirconia in atmospheric pressure microwave plasma

2009 ◽  
Vol 24 (6) ◽  
pp. 2021-2028 ◽  
Author(s):  
R. Milani ◽  
R.P. Cardoso ◽  
T. Belmonte ◽  
C.A. Figueroa ◽  
C.A. Perottoni ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Atmospheric Pressure ◽  
Microwave Plasma ◽  
Plasma Nitriding ◽  
Nitrided Layer ◽  
Zirconium Nitride ◽  
Stabilized Zirconia ◽  
Partially Stabilized Zirconia ◽  
X Ray ◽  
Yttria Partially Stabilized Zirconia

High temperature plasma nitriding of yttria-partially-stabilized zirconia in atmospheric pressure microwave plasma was investigated. The morphological, mechanical, and physicochemical characteristics of the resulting nitrided layer were characterized by different methods, such as optical and scanning electron microscopy, microindentation, x-ray diffraction, narrow resonant nuclear reaction profiling, secondary neutral mass spectrometry, and x-ray photoelectron spectroscopy, aiming at investigating the applicability of this highly efficient process for nitriding of ceramics. The structure of the plasma nitrided layer was found to be complex, composed of tetragonal and cubic zirconia, as well as zirconium nitride and oxynitride. The growth rate of the nitrided layer, 4 µm/min, is much higher than that obtained by any other previous nitriding process, whereas a typical 50% increase in Vickers hardness over that of yttria-partially-stabilized zirconia was observed.

A nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by a lift-off process

2014 ◽  
Vol 104 (25) ◽  
pp. 252109 ◽  
Author(s):  
Yoshiaki Mokuno ◽  
Yukako Kato ◽  
Nobuteru Tsubouchi ◽  
Akiyoshi Chayahara ◽  
Hideaki Yamada ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Single Crystal ◽  
Free Standing ◽  
Nitrogen Doped ◽  
Diamond Plate ◽  
Low Dislocation Density ◽  
Single Crystal Diamond ◽  
Lift Off

scholarly journals Nanocrystalline diamond micro-anvil grown on single crystal diamond as a generator of ultra-high pressures

AIP Advances ◽  
2016 ◽  
Vol 6 (9) ◽  
pp. 095027 ◽  
Author(s):  
Gopi K. Samudrala ◽  
Samuel L. Moore ◽  
Nenad Velisavljevic ◽  
Georgiy M. Tsoi ◽  
Paul A. Baker ◽  
...  
Keyword(s):  
Single Crystal ◽  
High Pressures ◽  
Nanocrystalline Diamond ◽  
Single Crystal Diamond

scholarly journals Nitrogen and Silicon Defect Incorporation during Homoepitaxial CVD Diamond Growth on (111) Surfaces

2015 ◽  
Vol 1734 ◽  
Author(s):  
Samuel L. Moore ◽  
Yogesh K. Vohra
Keyword(s):  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Microwave Plasma ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Defect Center ◽  
Defect Centers ◽  
Single Crystal Diamond

ABSTRACTChemical Vapor Deposited (CVD) diamond growth on (111)-diamond surfaces has received increased attention lately because of the use of N-V related centers in quantum computing as well as application of these defect centers in sensing nano-Tesla strength magnetic fields. We have carried out a detailed study of homoepitaxial diamond deposition on (111)-single crystal diamond (SCD) surfaces using a 1.2 kW microwave plasma CVD (MPCVD) system employing methane/hydrogen/nitrogen/oxygen gas phase chemistry. We have utilized Type Ib (111)-oriented single crystal diamonds as seed crystals in our study. The homoepitaxially grown diamond films were analyzed by Raman spectroscopy, Photoluminescence Spectroscopy (PL), X-ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The nitrogen concentration in the plasma was carefully varied between 0 and 1500 ppm while a ppm level of silicon impurity is present in the plasma from the quartz bell jar. The concentration of N-V defect centers with PL zero phonon lines (ZPL) at 575nm and 637nm and the Si-defect center with a ZPL at 737nm were experimentally detected from a variation in CVD growth conditions and were quantitatively studied. Altering nitrogen and oxygen concentration in the plasma was observed to directly affect N-V and Si-defect incorporation into the (111)-oriented diamond lattice and these findings are presented.

scholarly journals Thermal Behavior of Single-Crystal Diamonds Catalyzed by Titanium Alloy at Elevated Temperature

2020 ◽  
Vol 10 (13) ◽  
pp. 4651
Author(s):  
Pengyu Hou ◽  
Ming Zhou ◽  
Haijun Zhang
Keyword(s):  
Titanium Alloy ◽  
Tool Wear ◽  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Elevated Temperatures ◽  
Tool Material ◽  
Alloy Sheet ◽  
Machine Material ◽  
X Ray ◽  
Single Crystal Diamond

Single-crystal diamonds are considered as the best tool material for ultra-precision machining. However, due to its low thermal conductivity, small elastic modulus and strong chemical activity, titanium alloy has poor machinability and is a typically difficult-to-machine material. Excessive tool wear prevents diamonds from cutting titanium alloy. This study conducts a series of thermal analytic experiments under conditions of different gas atmospheres in order to research the details of thermochemical wear of diamonds catalyzed by titanium alloy at elevated temperatures. Raman scattering analysis was performed to identify the transformation of the diamond crystal structure. The change in chemical composition of the work material was detected be means of energy dispersive X-ray analysis. X-ray photoelectron spectroscopy was used to confirm the resultant interfacial thermochemical reactions. The results of the study reveal the diffusion law of the single-crystal diamond under the action of titanium in the argon and air environment. From the experimental results, the product of the chemical reaction corresponding to the interface between the diamond and the titanium alloy sheet could be found. The research results provide a theoretical basis for elucidating the wear mechanism of diamond tools in the titanium alloy cutting process and for exploring the measures to suppress tool wear.

scholarly journals Ohmic Contact of Pt/Au on Hydrogen-Terminated Single Crystal Diamond

Coatings ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 539 ◽  
Author(s):  
Minghui Zhang ◽  
Fang Lin ◽  
Wei Wang ◽  
Fengnan Li ◽  
Yan-Feng Wang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Electron Beam Evaporation ◽  
Specific Contact Resistance ◽  
Treatment Conditions ◽  
Single Crystal Diamond ◽  
Specific Contact ◽  
Evaporation Technique ◽  
20 Nm

In this study, contact properties of platinum/gold (Pt/Au) on the surface of hydrogen-terminated single crystal diamond (H-SCD) were studied with several treatment conditions. The electrodes of Pt (20 nm)/Au (100 nm) were deposited on H-SCD surface by electron beam evaporation technique. Then, the specific contact resistance (ρc) of the as-fabricated sample was measured by the circular transmission line model, which showed good ohmic properties with the value of 5.65 × 10−4 Ω·cm2. To identify the thermal stability of Pt/Au/H-SCD, the sample was annealed in hydrogen ambient from 200 to 700 °C for 20 min at each temperature. As the temperature increased, ρc demonstrated better thermal stability. In addition, the barrier height was evaluated to be −0.67 ± 0.12 eV by X-ray photoelectron spectroscopy (XPS) technique.

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